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Results:
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Results: 24
Authors:
RUUS R
SAAR A
AARIK J
AIDLA A
UUSTARE T
KIKAS A
Citation: R. Ruus et al., RESONANT AUGER-SPECTRA OF TIO2 AT TI 2P AND O 1S ABSORPTION EDGES, Journal of electron spectroscopy and related phenomena, 93(1-3), 1998, pp. 193-199
Authors:
KUKLI K
AARIK J
AIDLA A
SIIMON H
RITALA M
LESKELA M
Citation: K. Kukli et al., IN-SITU STUDY OF ATOMIC LAYER EPITAXY GROWTH OF TANTALUM OXIDE THIN-FILMS FROM TA(OC2H5)(5) AND H2O, Applied surface science, 112, 1997, pp. 236-242
Authors:
AARIK J
AIDLA A
KIISLER AA
UUSTARE T
SAMMELSELG V
Citation: J. Aarik et al., EFFECT OF CRYSTAL-STRUCTURE ON OPTICAL-PROPERTIES OF TIO2 FILMS GROWNBY ATOMIC LAYER DEPOSITION, Thin solid films, 305(1-2), 1997, pp. 270-273
Authors:
RUUS R
KIKAS A
SAAR A
AUSMEES A
NOMMISTE E
AARIK J
AIDLA A
UUSTARE T
MARTINSON I
Citation: R. Ruus et al., TI-2P AND O-1S X-RAY-ABSORPTION OF TIO2 POLYMORPHS, Solid state communications, 104(4), 1997, pp. 199-203
Authors:
SIIMON H
AARIK J
Citation: H. Siimon et J. Aarik, THICKNESS PROFILES OF THIN-FILMS CAUSED BY SECONDARY REACTIONS IN FLOW-TYPE ATOMIC LAYER DEPOSITION REACTORS, Journal of physics. D, Applied physics, 30(12), 1997, pp. 1725-1728
Authors:
AARIK J
AIDLA A
SAMMELSELG V
UUSTARE T
Citation: J. Aarik et al., EFFECT OF GROWTH-CONDITIONS ON FORMATION OF TIO2-II THIN-FILMS IN ATOMIC LAYER DEPOSITION PROCESS, Journal of crystal growth, 181(3), 1997, pp. 259-264
Authors:
TAPPURA K
AARIK J
PESSA M
Citation: K. Tappura et al., HIGH-POWER GAINP-ALGAINP QUANTUM-WELL LASERS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, IEEE photonics technology letters, 8(3), 1996, pp. 319-321
Authors:
AARIK J
AIDLA A
UUSTARE T
Citation: J. Aarik et al., ATOMIC-LAYER GROWTH OF TIO2-II THIN-FILMS, Philosophical magazine letters, 73(3), 1996, pp. 115-119
Authors:
AARIK J
KUKLI K
AIDLA A
PUNG L
Citation: J. Aarik et al., MECHANISMS OF SUBOXIDE GROWTH AND ETCHING IN ATOMIC LAYER DEPOSITION OF TANTALUM OXIDE FROM TACL5 AND H2O, Applied surface science, 103(4), 1996, pp. 331-341
Authors:
AARIK J
AIDLA A
SAMMELSELG V
SIIMON H
UUSTARE T
Citation: J. Aarik et al., CONTROL OF THIN-FILM STRUCTURE BY REACTANT PRESSURE IN ATOMIC LAYER DEPOSITION OF TIO2, Journal of crystal growth, 169(3), 1996, pp. 496-502
Authors:
SIIMON H
AARIK J
Citation: H. Siimon et J. Aarik, MODELING OF PRECURSOR FLOW AND DEPOSITION IN ATOMIC LAYER DEPOSITION REACTOR, Journal de physique. IV, 5(C5), 1995, pp. 245-252
Authors:
SIIMON H
AARIK J
Citation: H. Siimon et J. Aarik, REACTIVITIES OF TACL5 AND H2O AS PRECURSORS FOR ATOMIC LAYER DEPOSITION, Journal de physique. IV, 5(C5), 1995, pp. 277-282
Authors:
SIIMON H
AARIK J
Citation: H. Siimon et J. Aarik, MODELING OF PRECURSOR FLOW AND DEPOSITION IN ATOMIC LAYER DEPOSITION REACTOR, Journal de physique. IV, 5(C5), 1995, pp. 245-252
Authors:
SIIMON H
AARIK J
Citation: H. Siimon et J. Aarik, REACTIVITIES OF TACL5 AND H2O AS PRECURSORS FOR ATOMIC LAYER DEPOSITION, Journal de physique. IV, 5(C5), 1995, pp. 277-282
Authors:
AARIK J
SIIMON H
Citation: J. Aarik et H. Siimon, CHARACTERIZATION OF ADSORPTION IN FLOW-TYPE ATOMIC LAYER EPITAXY REACTOR (VOL 81, PG 281, 1994), Applied surface science, 90(1), 1995, pp. 109-109
Authors:
KUKLI K
AARIK J
AIDLA A
KOHAN O
UUSTARE T
SAMMELSELG V
Citation: K. Kukli et al., PROPERTIES OF TANTALUM OXIDE THIN-FILMS GROWN BY ATOMIC LAYER DEPOSITION, Thin solid films, 260(2), 1995, pp. 135-142
Authors:
AARIK J
AIDLA A
UUSTARE T
SAMMELSELG V
Citation: J. Aarik et al., MORPHOLOGY AND STRUCTURE OF TIO2 THIN-FILMS GROWN BY ATOMIC LAYER DEPOSITION, Journal of crystal growth, 148(3), 1995, pp. 268-275
Authors:
AARIK J
AIDLA A
JAEK A
LESKELA M
NIINISTO L
Citation: J. Aarik et al., IN-SITU STUDY OF A STRONTIUM BETA-DIKETONATE PRECURSOR FOR THIN-FILM GROWTH BY ATOMIC LAYER EPITAXY, Journal of materials chemistry, 4(8), 1994, pp. 1239-1244
Authors:
AARIK J
SIIMON H
Citation: J. Aarik et H. Siimon, CHARACTERIZATION OF ADSORPTION IN FLOW-TYPE ATOMIC LAYER EPITAXY REACTOR, Applied surface science, 81(3), 1994, pp. 281-287
Authors:
AARIK J
SIIMON H
Citation: J. Aarik et H. Siimon, CHARACTERIZATION OF ADSORPTION IN FLOW-TYPE ATOMIC LAYER EPITAXY REACTOR, Applied surface science, 81(3), 1994, pp. 281-287
Authors:
AARIK J
AIDLA A
JAEK A
LESKELA M
NIINISTO L
Citation: J. Aarik et al., PRECURSOR PROPERTIES OF CALCIUM BETA-DIKETONATE IN VAPOR-PHASE ATOMICLAYER EPITAXY, Applied surface science, 75, 1994, pp. 33-38
Authors:
AARIK J
AIDLA A
KUKLI K
Citation: J. Aarik et al., IN-SITU CHARACTERIZATION OF ALE GROWTH BY REAGENT PULSE DELAY TIMES IN A FLOW-TYPE REACTOR, Applied surface science, 75, 1994, pp. 180-184
Authors:
AARIK J
AIDLA A
KUKLI K
UUSTARE T
Citation: J. Aarik et al., DEPOSITION AND ETCHING OF TANTALUM OXIDE-FILMS IN ATOMIC LAYER EPITAXY PROCESS, Journal of crystal growth, 144(1-2), 1994, pp. 116-119
Authors:
UUSTARE T
AARIK J
ELANGO M
Citation: T. Uustare et al., OXYGEN DEPLETION OF THE CRYSTALLINE (ANATASE) TIO2 INITIATED BY IONIZATION OF THE K-SHELL, Applied physics letters, 65(20), 1994, pp. 2551-2552
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