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Results: 25
Authors:
PELKA JB
GORECKA J
AULEYTNER J
DOMAGALA J
BAKMISIUK J
Citation: Jb. Pelka et al., STUDY OF SI(111) IMPLANTED WITH AS IONS BY X-RAY-DIFFRACTION AND GRAZING-INCIDENCE METHODS, Acta Physica Polonica. A, 91(5), 1997, pp. 905-910
Authors:
DATSENKO L
KRASULYA S
MACHULIN V
AULEYTNER J
KHRUPA V
Citation: L. Datsenko et al., INTEGRAL STRUCTURE PERFECTION DIAGNOSTICS OF SINGLE-CRYSTALS USING 2 WAVELENGTHS OF X-RAY-SPECTRUM, Acta Physica Polonica. A, 91(5), 1997, pp. 935-938
Authors:
KHRUPA V
KRASULYA S
MACHULIN V
DATSENKO L
AULEYTNER J
Citation: V. Khrupa et al., X-RAY STRUCTURE PERFECTION DIAGNOSTICS OF SLIGHTLY DISTORTED SILICON-CRYSTALS IN THE BRAGG-CASE OF DIFFRACTION, Acta Physica Polonica. A, 91(5), 1997, pp. 981-985
Authors:
ZYMIERSKA D
AULEYTNER J
DOMAGALA J
SZEWCZYK A
DMITRUK N
Citation: D. Zymierska et al., COMPARATIVE-STUDIES OF SURFACE-ROUGHNESS OF THIN EPITAXIAL SI FILMS BY COMPUTER-SIMULATIONS AND EXPERIMENTAL X-RAY AND OPTICAL METHODS, Acta Physica Polonica. A, 91(5), 1997, pp. 1025-1030
Authors:
KLINGER D
AULEYTNER J
ZYMIERSKA D
Citation: D. Klinger et al., THEORETICAL-STUDY OF RECRYSTALLIZATION PROCESS OF AMORPHOUS-GE LAYER SUBJECTED TO PULSED EXCIMER (XECL) LASER-RADIATION, Crystal research and technology, 32(7), 1997, pp. 983-987
Authors:
ZYMIERSKA D
AULEYTNER J
Citation: D. Zymierska et J. Auleytner, APPLICATION OF X-RAYS TO THE STUDY OF THE SURFACE-ROUGHNESS, Crystal research and technology, 32(1), 1997, pp. 135-141
Authors:
AULEYTNER J
SKOROKHOD MY
DATSENKO LI
KHRUPA VI
Citation: J. Auleytner et al., INFLUENCE OF DISLOCATION INTERACTIONS WITH IMPURITIES ON THEIR TOPOGRAPHICAL IMAGES IN SILICON-CRYSTALS, Acta Physica Polonica. A, 90(3), 1996, pp. 541-546
Authors:
VARTANYANTZ IA
AULEYTNER J
NOWICKI L
KWIATKOWSKI S
TUROS A
Citation: Ia. Vartanyantz et al., X-RAY STANDING WAVES AND RUTHERFORD BACKSCATTERING STUDIES OF THE STRUCTURE OF SI SINGLE-CRYSTALS IMPLANTED WITH FE IONS, Acta Physica Polonica. A, 89(5-6), 1996, pp. 625-633
Authors:
AULEYTNER J
Citation: J. Auleytner, X-RAY-DIFFRACTION INVESTIGATIONS OF STRUCTURE OF SILICON SINGLE-CRYSTALS AFTER IRRADIATION BY HEAVY-IONS, Acta Physica Polonica. A, 89(3), 1996, pp. 301-307
Authors:
KHRUPA VI
KRASULYA SM
MACHULIN V
DATSENKO LI
AULEYTNER J
Citation: Vi. Khrupa et al., INVESTIGATION OF NEAR-SURFACE DISTORTIONS IN SI SINGLE-CRYSTALS BU MEANS OF SPATIAL-DISTRIBUTION ANALYSIS OF REFLECTED BEAMS, Acta Physica Polonica. A, 89(3), 1996, pp. 309-313
Authors:
AULEYTNER J
CZACHOR A
Citation: J. Auleytner et A. Czachor, PREFACE, Acta Physica Polonica. A, 89(2), 1996, pp. 113-114
Authors:
KLINGER D
AULEYTNER J
ZYMIERSKA D
Citation: D. Klinger et al., THEORETICAL-STUDY OF GE IMPLANTED SILICON SUBJECTED TO PULSED EXCIMER(XECL) LASER-RADIATION, Crystal research and technology, 31(7), 1996, pp. 847-850
Authors:
AULEYTNER J
GODWOD K
PELKA J
Citation: J. Auleytner et al., THE MICROCAMERA USED FOR PHOTOELECTRON EXCITED BY THE X-RAY STANDING-WAVE (XSW) RECORDING AND SUBMICRON LAYER STRUCTURE STUDIES, Crystal research and technology, 30(4), 1995, pp. 481-486
Authors:
AULEYTNER J
KHRUPA V
BRIGINETS A
SKOROKHOLD M
DATSENKO L
Citation: J. Auleytner et al., X-RAY-DIFFRACTION INVESTIGATION OF STRUCTURE PERFECTION STATE OF SILICON-CRYSTALS AFTER IRRADIATION BY FAST URANIUM IONS, Crystal research and technology, 30(2), 1995, pp. 223-229
Authors:
AULEYTNER J
ADAMCZEWSKA J
BARCZ A
GORECKA J
REGINSKI K
Citation: J. Auleytner et al., X-RAY ELECTRONO-OPTICAL AND SIMS CHARACTERIZATION OF SI CRYSTALS IMPLANTED WITH BI IONS BEFORE AND AFTER RAPID THERMAL ANNEALING, Crystal research and technology, 30(1), 1995, pp. 129-133
Authors:
AULEYTNER J
Citation: J. Auleytner, COMPARATIVE-STUDIES OF ION-IMPLANTED CRYSTALS SUBJECTED TO PULSED-LASER AND THERMAL ANNEALINGS BY MEANS OF X-RAY AND ELECTRON-OPTICAL METHODS, Physica status solidi. a, Applied research, 150(1), 1995, pp. 201-209
Authors:
AULEYTNER J
SKOROKHOD M
DATSENKO L
KHRUPA V
BRIGINETS A
Citation: J. Auleytner et al., X-RAY-INVESTIGATIONS OF DISLOCATIONS IN AN IMPLANTED SI CRYSTAL-INDUCED BY PULSED-LASER ANNEALING, Physica status solidi. a, Applied research, 147(2), 1995, pp. 69-71
Authors:
AULEYTNER J
DZIUBA Z
GORECKA J
PELKA J
REGINSKI K
Citation: J. Auleytner et al., X-RAY AND ELECTRON-OPTICAL CHARACTERIZATION OF ZNTE CDTE AND ZNTE/GAAS EPITAXIAL LAYERS OBTAINED BY THE MBE METHOD/, Acta Physica Polonica. A, 86(4), 1994, pp. 567-574
Authors:
AULEYTNER J
KOZANKIEWICZ B
REGINSKI K
Citation: J. Auleytner et al., DCXS AND RHEED CHARACTERIZATION OF EFFECTIVENESS OF ANNEALING IMPLANTED SI CRYSTALS BY USING PULSED UV EXCIMER-LASER AND SAMPLE SCANNING TECHNIQUE, Crystal research and technology, 29(1), 1994, pp. 93-97
Authors:
AULEYTNER J
Citation: J. Auleytner, PROGRESS IN X-RAY AND ELECTRON-OPTICAL INVESTIGATIONS OF STRUCTURAL-CHANGES BY FAST HEAVY-IONS IN SEMICONDUCTORS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 87(1-4), 1994, pp. 124-129
Authors:
ZYMIERSKA D
AULEYTNER J
Citation: D. Zymierska et J. Auleytner, THEORETICAL INVESTIGATION OF DEFECTS INDUCED IN SILICON-CRYSTALS BY HIGH-ENERGY HEAVY-IONS, Radiation effects and defects in solids, 126(1-4), 1993, pp. 279-282
Authors:
AULEYTNER J
DOMAGALA J
GOLACKI Z
PAWLOWSKA M
PELKA J
REGINSKI K
Citation: J. Auleytner et al., X-RAY AND ELECTRON-OPTICAL CHARACTERIZATION OF ZNSE(CO) CRYSTAL WITH NATURAL FACE, Acta Physica Polonica. A, 83(6), 1993, pp. 759-768
Authors:
AULEYTNER J
ADAMCZEWSKA J
REGINSKI K
Citation: J. Auleytner et al., THE REAL STRUCTURE OF GE IONS-IMPLANTED SI CRYSTALS SUBJECTED TO THERMAL ANNEALING, Crystal research and technology, 28(7), 1993, pp. 959-964
Authors:
AULEYTNER J
MORAWIEC J
Citation: J. Auleytner et J. Morawiec, FORMATION OF DISLOCATIONS AND OTHER TYPES OF EXTENDED DEFECTS BY ION-IMPLANTATION, Physica status solidi. a, Applied research, 138(2), 1993, pp. 403-408
Authors:
AULEYTNER J
Citation: J. Auleytner, ON THE POSSIBILITY OF APPLYING THE ACOUSTIC MICROSCOPE, CONSTRUCTED BY ZIENIUK,JERZY, TO DIAGNOSING MATERIALS AND SEMICONDUCTOR-DEVICES, Acustica, 79(2), 1993, pp. 190-191
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