Authors:
Kuang, GK
Bohm, G
Graf, N
Grau, M
Rosel, G
Meyer, R
Amann, MC
Citation: Gk. Kuang et al., High-temperature performance of InGaAs-InGaAlAs-InP 1.79-mu m diode lasersgrown in solid-source molecular-beam epitaxy, IEEE PHOTON, 13(4), 2001, pp. 275-277
Citation: M. Arzberger et Mc. Amann, Linewidth broadening of quantum dot emission caused by temperature fluctuations, PHYS ST S-B, 224(3), 2001, pp. 655-658
Authors:
Ulbrich, N
Scarpa, G
Sigl, A
Rosskopf, J
Bohm, G
Abstrieter, G
Amann, MC
Citation: N. Ulbrich et al., High-temperature (T >= 470 K) pulsed operation of 5.5 mu m quantum cascadelasers with high-reflection coating, ELECTR LETT, 37(22), 2001, pp. 1341-1342
Authors:
Shau, R
Ortsiefer, M
Rosskopf, J
Bohm, G
Kohler, F
Amann, MC
Citation: R. Shau et al., Vertical-cavity surface-emitting laser diodes at 1.55 mu m with large output power and high operation temperature, ELECTR LETT, 37(21), 2001, pp. 1295-1296
Authors:
Ortsiefer, M
Shau, R
Bohm, G
Kohler, F
Abstreiter, G
Amann, MC
Citation: M. Ortsiefer et al., Low-resistance InGa(Al)As tunnel junctions for long wavelength vertical-cavity surface-emitting lasers, JPN J A P 1, 39(4A), 2000, pp. 1727-1729
Authors:
Ortsiefer, M
Shau, R
Bohm, G
Zigldrum, M
Rosskopf, J
Kohler, F
Amann, MC
Citation: M. Ortsiefer et al., 90 degrees C continuous-wave operation of 1.83-mu m Vertical-Cavity Surface-Emitting Lasers, IEEE PHOTON, 12(11), 2000, pp. 1435-1437
Citation: M. Arzberger et Mc. Amann, Homogeneous line broadening in individual semiconductor quantum dots by temperature fluctuations, PHYS REV B, 62(16), 2000, pp. 11029-11037
Citation: S. Moller et Mc. Amann, Tuning performance and spectral selectivity of widely tunable vertical Mach-Zehnder lasers, IEEE J Q EL, 36(2), 2000, pp. 192-197
Authors:
Ortsiefer, M
Shau, R
Bohm, G
Kohler, F
Amann, MC
Citation: M. Ortsiefer et al., Room-temperature operation of index-guided 1.55 mu m InP-based vertical-cavity surface-emitting laser, ELECTR LETT, 36(5), 2000, pp. 437-439
Authors:
Kuang, GK
Bohm, G
Graf, N
Grau, M
Rosel, G
Meyer, R
Amann, MC
Citation: Gk. Kuang et al., Long wavelength InGaAs-InGaAlAs-InP diode lasers grown by solid-source molecular-beam epitaxy, ELECTR LETT, 36(22), 2000, pp. 1849-1851
Authors:
Shau, R
Ortsiefer, M
Zigldrum, M
Rosskopf, J
Bohm, G
Kohler, F
Amann, MC
Citation: R. Shau et al., Low-threshold InGaAlAs/InP vertical-cavity surface-emitting laser diodes for 1.8 mu m wavelength range, ELECTR LETT, 36(15), 2000, pp. 1286-1287
Authors:
Ortsiefer, M
Shau, R
Zigldrum, M
Bohm, G
Kohler, F
Amann, MC
Citation: M. Ortsiefer et al., Submilliamp long-wavelength InP-based vertical-cavity surface-emitting laser with stable linear polarisation, ELECTR LETT, 36(13), 2000, pp. 1124-1126
Citation: M. Arzberger et al., Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction, ELECTR LETT, 36(1), 2000, pp. 87-88
Authors:
Kuang, GK
Bohm, G
Grau, M
Rosel, G
Meyer, R
Amann, MC
Citation: Gk. Kuang et al., 2.12 mu m InGaAs-InGaAlAs-InP diode lasers grown in solid-source molecular-beam epitaxy, APPL PHYS L, 77(8), 2000, pp. 1091-1092