AAAAAA
Results: 1-25/29
Authors:
Kuang, GK
Bohm, G
Graf, N
Grau, M
Rosel, G
Meyer, R
Amann, MC
Citation: Gk. Kuang et al., High-temperature performance of InGaAs-InGaAlAs-InP 1.79-mu m diode lasersgrown in solid-source molecular-beam epitaxy, IEEE PHOTON, 13(4), 2001, pp. 275-277
Authors:
Arzberger, M
Amann, MC
Citation: M. Arzberger et Mc. Amann, Linewidth broadening of quantum dot emission caused by temperature fluctuations, PHYS ST S-B, 224(3), 2001, pp. 655-658
Authors:
Arzberger, M
Bohm, G
Amann, MC
Abstreiter, G
Citation: M. Arzberger et al., Gain characteristics of self-assembled InAs/GaAs quantum dots, PHYS ST S-B, 224(3), 2001, pp. 827-831
Authors:
Lingk, C
von Plessen, G
Feldmann, J
Stock, K
Arzberger, M
Bohm, G
Amann, MC
Abstreiter, G
Citation: C. Lingk et al., Time-resolved amplified spontaneous emission in InAs/GaAs quantum dots, PHYS ST S-B, 224(2), 2001, pp. 475-480
Authors:
Amann, MC
Bosch, T
Lescure, M
Myllyla, R
Rioux, M
Citation: Mc. Amann et al., Laser ranging: a critical review of usual techniques for distance measurement, OPT ENG, 40(1), 2001, pp. 10-19
Authors:
Boehm, G
Ortsiefer, M
Shau, R
Koehler, F
Meyer, R
Amann, MC
Citation: G. Boehm et al., AlGaInAs/InP-epitaxy for long wavelength vertical-cavity surface-emitting lasers, J CRYST GR, 227, 2001, pp. 319-323
Authors:
Kuang, GK
Bohm, G
Grau, M
Rosel, G
Amann, MC
Citation: Gk. Kuang et al., Long wavelength InGaAs-InGaAlAs-InP lasers grown in MBE, J CRYST GR, 227, 2001, pp. 334-337
Authors:
Egorov, AY
Bernklau, D
Borchert, B
Illek, S
Livshits, D
Rucki, A
Schuster, M
Kaschner, A
Hoffmann, A
Dumitras, G
Amann, MC
Riechert, H
Citation: Ay. Egorov et al., Growth of high quality InGaAsN heterostructures and their laser application, J CRYST GR, 227, 2001, pp. 545-552
Authors:
Ulbrich, N
Scarpa, G
Sigl, A
Rosskopf, J
Bohm, G
Abstrieter, G
Amann, MC
Citation: N. Ulbrich et al., High-temperature (T >= 470 K) pulsed operation of 5.5 mu m quantum cascadelasers with high-reflection coating, ELECTR LETT, 37(22), 2001, pp. 1341-1342
Authors:
Shau, R
Ortsiefer, M
Rosskopf, J
Bohm, G
Kohler, F
Amann, MC
Citation: R. Shau et al., Vertical-cavity surface-emitting laser diodes at 1.55 mu m with large output power and high operation temperature, ELECTR LETT, 37(21), 2001, pp. 1295-1296
Authors:
Arzberger, M
Bohm, G
Amann, MC
Abstreiter, G
Citation: M. Arzberger et al., Continuous room-temperature operation of electrically pumped quantum-dot microcylinder lasers, APPL PHYS L, 79(12), 2001, pp. 1766-1768
Authors:
Zimmermann, J
Cundiff, ST
von Plessen, G
Feldmann, J
Arzberger, M
Bohm, G
Amann, MC
Abstreiter, G
Citation: J. Zimmermann et al., Dark pulse formation in a quantum-dot laser, APPL PHYS L, 79(1), 2001, pp. 18-20
Authors:
Ortsiefer, M
Shau, R
Bohm, G
Kohler, F
Abstreiter, G
Amann, MC
Citation: M. Ortsiefer et al., Low-resistance InGa(Al)As tunnel junctions for long wavelength vertical-cavity surface-emitting lasers, JPN J A P 1, 39(4A), 2000, pp. 1727-1729
Authors:
Pfeiffer, J
Peerlings, J
Riemenschneider, R
Genovese, R
Aziz, M
Goutain, E
Kunzel, H
Gortz, W
Bohm, G
Amann, MC
Meissner, P
Hartnagel, HL
Citation: J. Pfeiffer et al., InAlGaAs bulk micromachined tunable Fabry-Perot filter for dense WDM systems, MAT SC S PR, 3(5-6), 2000, pp. 409-412
Authors:
Ortsiefer, M
Shau, R
Bohm, G
Zigldrum, M
Rosskopf, J
Kohler, F
Amann, MC
Citation: M. Ortsiefer et al., 90 degrees C continuous-wave operation of 1.83-mu m Vertical-Cavity Surface-Emitting Lasers, IEEE PHOTON, 12(11), 2000, pp. 1435-1437
Authors:
Arzberger, M
Amann, MC
Citation: M. Arzberger et Mc. Amann, Homogeneous line broadening in individual semiconductor quantum dots by temperature fluctuations, PHYS REV B, 62(16), 2000, pp. 11029-11037
Authors:
Moller, S
Amann, MC
Citation: S. Moller et Mc. Amann, Tuning performance and spectral selectivity of widely tunable vertical Mach-Zehnder lasers, IEEE J Q EL, 36(2), 2000, pp. 192-197
Authors:
Kuang, GK
Bohm, G
Grau, M
Rosel, G
Amann, MC
Citation: Gk. Kuang et al., High-performance InGaAs-InGaAlAs 1.83 mu m lasers, ELECTR LETT, 36(7), 2000, pp. 634-636
Authors:
Ortsiefer, M
Shau, R
Bohm, G
Kohler, F
Amann, MC
Citation: M. Ortsiefer et al., Room-temperature operation of index-guided 1.55 mu m InP-based vertical-cavity surface-emitting laser, ELECTR LETT, 36(5), 2000, pp. 437-439
Authors:
Kuang, GK
Bohm, G
Graf, N
Grau, M
Rosel, G
Meyer, R
Amann, MC
Citation: Gk. Kuang et al., Long wavelength InGaAs-InGaAlAs-InP diode lasers grown by solid-source molecular-beam epitaxy, ELECTR LETT, 36(22), 2000, pp. 1849-1851
Authors:
Shau, R
Ortsiefer, M
Zigldrum, M
Rosskopf, J
Bohm, G
Kohler, F
Amann, MC
Citation: R. Shau et al., Low-threshold InGaAlAs/InP vertical-cavity surface-emitting laser diodes for 1.8 mu m wavelength range, ELECTR LETT, 36(15), 2000, pp. 1286-1287
Authors:
Ortsiefer, M
Shau, R
Zigldrum, M
Bohm, G
Kohler, F
Amann, MC
Citation: M. Ortsiefer et al., Submilliamp long-wavelength InP-based vertical-cavity surface-emitting laser with stable linear polarisation, ELECTR LETT, 36(13), 2000, pp. 1124-1126
Authors:
Arzberger, M
Lohner, M
Bohm, G
Amann, MC
Citation: M. Arzberger et al., Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction, ELECTR LETT, 36(1), 2000, pp. 87-88
Authors:
Kuang, GK
Bohm, G
Grau, M
Rosel, G
Meyer, R
Amann, MC
Citation: Gk. Kuang et al., 2.12 mu m InGaAs-InGaAlAs-InP diode lasers grown in solid-source molecular-beam epitaxy, APPL PHYS L, 77(8), 2000, pp. 1091-1092
Authors:
Lingk, C
von Plessen, G
Feldmann, J
Stock, K
Arzberger, M
Bohm, G
Amann, MC
Abstreiter, G
Citation: C. Lingk et al., Dynamics of amplified spontaneous emission in InAs/GaAs quantum dots, APPL PHYS L, 76(24), 2000, pp. 3507-3509