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Results: 1-25/26
Authors:
KAABI L
BENBRAHIM J
REMAKI B
GONTRAND C
ELOMARI H
BUREAU JC
SASSI Z
BALLAND B
Citation: L. Kaabi et al., THE RESIDUAL ELECTRICALLY ACTIVE DAMAGE IN LOW-ENERGY BORON-IMPLANTEDSILICON - RAPID THERMAL ANNEALING AND IMPLANT MASS EFFECTS, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 3(1), 1998, pp. 49-52
Authors:
CHANELIERE C
AUTRAN JL
DEVINE RAB
BALLAND B
Citation: C. Chaneliere et al., TANTALUM PENTOXIDE (TA2O5) THIN-FILMS FOR ADVANCED DIELECTRIC APPLICATIONS, Materials science & engineering. R, Reports, 22(6), 1998, pp. 269-322
Authors:
KAABI L
GONTRAND C
BUREAU JC
SASSI Z
BENBRAHIM J
BALLAND B
Citation: L. Kaabi et al., RTA PROCESSING OF IONIC BORON-IMPLANTED IN SILICON THROUGH SCREEN OXIDE-FILMS - EFFECTS OF SOME TECHNOLOGICAL PARAMETERS, Annales de chimie, 23(1-2), 1998, pp. 359-364
Authors:
AUTRAN JL
DEVINE R
CHANELIERE C
BALLAND B
Citation: Jl. Autran et al., FABRICATION AND CHARACTERIZATION OF SI-MOSFETS WITH PECVD AMORPHOUS TA2O5 GATE INSULATOR, IEEE electron device letters, 18(9), 1997, pp. 447-449
Authors:
KAABI L
GONTRAND C
PINARD P
BALLAND B
REMAKI B
GAMOUDI M
GUILLAUD G
Citation: L. Kaabi et al., IONIC IMPLANTATION AT LOW-ENERGY - APPLICATION TO THE SHALLOW JUNCTION ACCOMPLISHMENT AND SURFACE FUNCTIONALIZATION, Synthetic metals, 90(3), 1997, pp. 217-221
Authors:
DEVINE RAB
CHANELIERE C
AUTRAN JL
BALLAND B
PAILLET P
LERAY JL
Citation: Rab. Devine et al., USE OF CARBON-FREE TA2O5 THIN-FILMS AS A GATE INSULATOR, Microelectronic engineering, 36(1-4), 1997, pp. 61-64
Authors:
PIERUNEK S
AUTRAN JL
LEROY B
GABORIEAU LM
BALLAND B
Citation: S. Pierunek et al., LOCATION OF INDIVIDUAL TRAPS IN DRAM CELL TRANSISTORS BY CHARGE-PUMPING TECHNIQUE, Microelectronic engineering, 36(1-4), 1997, pp. 83-86
Authors:
KAABI L
GONTRAND C
LEMITI M
REMAKI B
BALLAND B
MEDDEB J
MARTY O
Citation: L. Kaabi et al., INVESTIGATION OF BF2-FILMS - REDISTRIBUTION OF FLUORINE AND BORON UNDER RAPID THERMAL ANNEALING( IMPLANTS IN SILICON THROUGH SIO2), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 68-73
Authors:
KAABI L
REMAKI B
GONTRAND C
LO PF
BALLAND B
Citation: L. Kaabi et al., THE EFFECT OF RAPID THERMAL TREATMENTS ON THE FORMATION OF SHALLOW JUNCTIONS BY IMPLANTING BORON AND BF2+ IONS INTO (100)SILICON THROUGH A PROTECTING MASK, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 196-200
Authors:
RAYNAUD C
AUTRAN JL
BRIOT JB
BALLAND B
BILLON T
LASSAGNE P
Citation: C. Raynaud et al., ALKALI CONTAMINATION OF NATIVE OXIDES GROWN ON 6H AND 3C SILICON-CARBIDE, Microelectronic engineering, 28(1-4), 1995, pp. 209-212
Authors:
SEIGNEUR F
AUTRAN JL
PLOSSU C
BALLAND B
BADOT D
STRABONI A
Citation: F. Seigneur et al., EFFECT OF (CO)-C-60 IRRADIATION AND FOWLER-NORDHEIM INJECTION ON MOS CAPACITORS WITH THIN PLASMA-NITRIDED GATE OXIDES, Microelectronic engineering, 28(1-4), 1995, pp. 345-348
Authors:
AUTRAN JL
BALLAND B
BABOT D
Citation: Jl. Autran et al., 3-LEVEL CHARGE-PUMPING STUDY OF RADIATION-INDUCED DEFECTS AT SI-SIO2 INTERFACE IN SUBMICROMETER MOS-TRANSISTORS, Journal of non-crystalline solids, 187, 1995, pp. 211-215
Authors:
AUTRAN JL
PLOSSU C
SEIGNEUR F
BALLAND B
STRABONI A
Citation: Jl. Autran et al., A COMPARISON OF SI-SIO2 INTERFACE-TRAP PROPERTIES IN THIN-FILM TRANSISTORS WITH THERMAL AND PLASMA-NITRIDED OXIDES, Journal of non-crystalline solids, 187, 1995, pp. 374-379
Authors:
RAYNAUD C
AUTRAN JL
BRIOT JB
BALLAND B
BECOURT N
JAUSSAUD C
Citation: C. Raynaud et al., IONIC CONTAMINATION IN METAL-OXIDE-SEMICONDUCTOR AL SIO2/3C-SIC CAPACITORS/, Journal of the Electrochemical Society, 142(1), 1995, pp. 282-285
Authors:
RAYNAUD C
AUTRAN JL
BRIOT JB
BALLAND B
BECOURT N
BILLON T
JAUSSAUD C
Citation: C. Raynaud et al., COMPARISON OF TRAPPING-DETRAPPING PROPERTIES OF MOBILE CHARGE IN ALKALI CONTAMINATED METAL-OXIDE-SILICON CARBIDE STRUCTURES, Applied physics letters, 66(18), 1995, pp. 2340-2342
Authors:
AUTRAN JL
BALLAND B
VALLARD JP
BABOT D
Citation: Jl. Autran et al., CHARGE-PUMPING STUDY OF RADIATION-INDUCED DEFECTS AT SI-SIO2 INTERFACE, Journal de physique. III, 4(9), 1994, pp. 1707-1721
Authors:
RAYNAUD C
AUTRQAN JL
SEIGNEUR F
JAUSSAUD C
BILLON T
GUILLOT G
BALLAND B
Citation: C. Raynaud et al., INSTABILITIES IN 6H-SIC MOS STRUCTURES, Journal de physique. III, 4(5), 1994, pp. 937-952
Authors:
GLACHANT A
GARCIA V
BALLAND B
BUREAU JC
PLOSSU C
DUPUY JC
STRABONI A
Citation: A. Glachant et al., LOW-ENERGY (3-100 EV) ELECTRON-BOMBARDMENT-INDUCED NITRIDATION OF THIN SIO2-FILMS - PHYSICOCHEMICAL AND ELECTRICAL ANALYSES, Thin solid films, 238(1), 1994, pp. 31-36
Authors:
AUTRAN JL
BALLAND B
Citation: Jl. Autran et B. Balland, A NEW 3RD-LEVEL CHARGE-PUMPING METHOD FOR ACCURATE DETERMINATION OF INTERFACE-TRAP PARAMETERS IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORS, Review of scientific instruments, 65(6), 1994, pp. 2141-2142
Authors:
KAABI L
GONTRAND C
REMAKI B
SEIGNEUR F
BALLAND B
Citation: L. Kaabi et al., ANALYSIS OF LOW-ENERGY BORON IMPLANTS IN SILICON THROUGH SIO2-FILMS -IMPLANTATION DAMAGE AND ANOMALOUS DIFFUSION, Microelectronics, 25(7), 1994, pp. 567-576
Authors:
RAYNAUD C
AUTRAN JL
BALLAND B
GUILLOT G
JAUSSAUD C
BILLON T
Citation: C. Raynaud et al., ELECTRICAL CHARACTERIZATION OF INSTABILITIES IN 6H SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 76(2), 1994, pp. 993-997
Authors:
AUTRAN JL
SEIGNEUR F
DELMAS J
PLOSSU C
BALLAND B
Citation: Jl. Autran et al., CHARACTERIZATION OF INTERFACE STATES IN S UBMICROMETER MOS-TRANSISTORS BY DIFFERENT CHARGE-PUMPING TECHNIQUES, Journal de physique. III, 3(10), 1993, pp. 1947-1961
Authors:
BALLAND B
BUREAU JC
BOTTON R
GLACHANT A
LEMITI M
Citation: B. Balland et al., PHYSICOCHEMICAL CHARACTERIZATION BY MEANS OF IR ABSORPTION-SPECTROSCOPY OF SI3N4 THIN-FILMS OBTAINED BY CHEMICAL-VAPOR-DEPOSITION ASSISTED BY IN-SITU ELECTRICAL-DISCHARGE, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 153-156
Authors:
GARCIA V
GLACHANT A
BUREAU JC
BALLAND B
PLOSSU C
DUPUY JC
STRABONI A
Citation: V. Garcia et al., NITRIDATION OF THIN SIO2-FILMS INDUCED BY LOW-ENERGY (3-100 EV) ELECTRON-BOMBARDMENT, Microelectronic engineering, 22(1-4), 1993, pp. 73-76
Authors:
KAABI L
GONTRAND C
LEMITI M
BALLAND B
Citation: L. Kaabi et al., IMPLANTATION DAMAGE AND ANOMALOUS DIFFUSION OF IMPLANTED BORON IN SILICON THROUGH SIO2-FILMS, Physica status solidi. a, Applied research, 138(1), 1993, pp. 99-109