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Results: 1-20 |
Results: 20
EPR STUDY OF EXCHANGE INTERACTIONS IN THE NONMAGNETIC KONDO SYSTEM LA1-XCEXCU6
Authors: ALTSHULER TS LVOV SG BRESLER MS
Citation: Ts. Altshuler et al., EPR STUDY OF EXCHANGE INTERACTIONS IN THE NONMAGNETIC KONDO SYSTEM LA1-XCEXCU6, Physics of the solid state, 40(4), 1998, pp. 543-548
DEFECT-RELATED AUGER EXCITATION OF ERBIUM IONS IN AMORPHOUS-SILICON
Authors: YASSIEVICH IN BRESLER MS GUSEV OB
Citation: In. Yassievich et al., DEFECT-RELATED AUGER EXCITATION OF ERBIUM IONS IN AMORPHOUS-SILICON, Journal of physics. Condensed matter, 9(43), 1997, pp. 9415-9425
EXCITATION AND TEMPERATURE QUENCHING OF ER-INDUCED LUMINESCENCE IN A-SI-H(ER)
Authors: FUHS W ULBER I WEISER G BRESLER MS GUSEV OB KUZNETSOV AN KUDOYAROVA VK TERUKOV EI YASSIEVICH IN
Citation: W. Fuhs et al., EXCITATION AND TEMPERATURE QUENCHING OF ER-INDUCED LUMINESCENCE IN A-SI-H(ER), Physical review. B, Condensed matter, 56(15), 1997, pp. 9545-9551
ER IN MOLECULAR-BEAM EPITAXY-GROWN GAAS ALGAAS STRUCTURES/
Authors: GUSEV OB PRINEAS JP LINDMARK EK BRESLER MS KHITROVA G GIBBS HM YASSIEVICH IN ZAKHARCHENYA BP MASTEROV VF
Citation: Ob. Gusev et al., ER IN MOLECULAR-BEAM EPITAXY-GROWN GAAS ALGAAS STRUCTURES/, Journal of applied physics, 82(4), 1997, pp. 1815-1823
JAHN-TELLER EFFECT ON SM3-VALENCE COMPOUNDS( IONS IN FLUCTUATING)
Authors: ALTSHULER TS BRESLER MS
Citation: Ts. Altshuler et Ms. Bresler, JAHN-TELLER EFFECT ON SM3-VALENCE COMPOUNDS( IONS IN FLUCTUATING), JETP letters, 66(10), 1997, pp. 681-685
ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ERBIUM-DOPED AMORPHOUS HYDROGENATED SILICON
Authors: GUSEV OB KUZNETSOV AN TERUKOV EI BRESLER MS KUDOYAROVA VK YASSIEVICH IN ZAKHARCHENYA BP FUHS W
Citation: Ob. Gusev et al., ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ERBIUM-DOPED AMORPHOUS HYDROGENATED SILICON, Applied physics letters, 70(2), 1997, pp. 240-242
TRANSFORMATION OF MAGNETIC STATES IN YB0. 5IN0.5CU2 DUE THE PHASE-TRANSITION OF THE 1-ST KIND
Authors: ALTSHULER TS BRESLER MS ELSHNER B SHLOTT M GRATTS E
Citation: Ts. Altshuler et al., TRANSFORMATION OF MAGNETIC STATES IN YB0. 5IN0.5CU2 DUE THE PHASE-TRANSITION OF THE 1-ST KIND, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 109(4), 1996, pp. 1359-1369
INASSBP-INAS-INASSBP LASER DOUBLE-HETEROSTRUCTURES WITH A P-N-JUNCTION IN THE ACTIVE-REGION
Authors: AIDARALIEV M BRESLER MS ZOTOVA NV KARANDASHEV SA MATVEEV BA STUS NM TALALAKIN GN
Citation: M. Aidaraliev et al., INASSBP-INAS-INASSBP LASER DOUBLE-HETEROSTRUCTURES WITH A P-N-JUNCTION IN THE ACTIVE-REGION, Semiconductors, 30(8), 1996, pp. 711-715
ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON
Authors: BRESLER MS GUSEV OB ZAKHARCHENYA BP PAK PE SOBOLEV NA SHEK EI YASSIEVICH IN MAKOVIICHUK MI PARSHIN EO
Citation: Ms. Bresler et al., ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON, Semiconductors, 30(5), 1996, pp. 479-482
INAS-BASED LASER DOUBLE HETEROSTRUCTURES WITH P-N-JUNCTION IN THE ACTIVE-REGION
Authors: BRESLER MS GUSEV OB ZOTOVA NV AYDARALIEV M KARANDASHEV SA MATVEEV BA STUS NM TALALAKIN GN
Citation: Ms. Bresler et al., INAS-BASED LASER DOUBLE HETEROSTRUCTURES WITH P-N-JUNCTION IN THE ACTIVE-REGION, Optical materials, 6(1-2), 1996, pp. 111-116
EXCITON MECHANISM OF ERBIUM ION EXCITATIO N IN SILICON
Authors: BRESLER MS GUSEV OB ZAKHARCHENYA BP YASSIEVICH IN
Citation: Ms. Bresler et al., EXCITON MECHANISM OF ERBIUM ION EXCITATIO N IN SILICON, Fizika tverdogo tela, 38(5), 1996, pp. 1474-1482
ERBIUM ELECTROLUMINESCENCE IN AMORPHOUS H YDROGENIZED SILICON AT THE ROOM-TEMPERATURE
Authors: BRESLER MS GUSEV OB ZAKHARCHENYA BP KUDOYAROVA VK KUZNETSOV AN TERUKOV EI FUS V YASSIEVICH IN
Citation: Ms. Bresler et al., ERBIUM ELECTROLUMINESCENCE IN AMORPHOUS H YDROGENIZED SILICON AT THE ROOM-TEMPERATURE, Fizika tverdogo tela, 38(4), 1996, pp. 1189-1194
JAHN-TELLER EFFECT ON SM3-VALENCE COMPOUND SMB6( IONS IN MIXED)
Authors: ALTSHULER TS BRESLER MS
Citation: Ts. Altshuler et Ms. Bresler, JAHN-TELLER EFFECT ON SM3-VALENCE COMPOUND SMB6( IONS IN MIXED), Czechoslovak journal of Physics, 46, 1996, pp. 1985-1986
RADIATIVE RECOMBINATION PROCESSES IN DOUBLE INASSBP INASSB/INASSBP HETEROSTRUCTURES/
Authors: BRESLER MS GUSEV OB AIDARALIEV M ZOTOVA NV KARANDASHEV SA MATVEEV BA STUS MN TALALAKIN GN
Citation: Ms. Bresler et al., RADIATIVE RECOMBINATION PROCESSES IN DOUBLE INASSBP INASSB/INASSBP HETEROSTRUCTURES/, Semiconductors, 29(2), 1995, pp. 108-112
RADIATION RECOMBINATION IN INASSB INASSBP DOUBLE HETEROSTRUCTURES/
Authors: AYDARALIEV M BRESLER MS GUSEV OB KARANDASHOV SA MATVEEV BA STUS MN TALALAKIN GN ZOTOVA NV
Citation: M. Aydaraliev et al., RADIATION RECOMBINATION IN INASSB INASSBP DOUBLE HETEROSTRUCTURES/, Semiconductor science and technology, 10(2), 1995, pp. 151-156
NUCLEAR METHODS IN TECHNOLOGY OF SI-ER STRUCTURES
Authors: NAIDENOV VO SOBOLEV NA ALEXANDROV OB BRESLER MS GUSEV OV GUSINSKII GM SHEK EI MAKAVIICHUK MI PARSHIN EO
Citation: Vo. Naidenov et al., NUCLEAR METHODS IN TECHNOLOGY OF SI-ER STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 587-589
ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON
Authors: BRESLER MS GUSEV OB KUDOYAROVA VK KUZNETSOV AN PAK PE TERUKOV EI YASSIEVICH IN ZAKHARCHENYA BP FUHS W STURN A
Citation: Ms. Bresler et al., ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON, Applied physics letters, 67(24), 1995, pp. 3599-3601
EFFECT OF ANNEALING CONDITIONS ON THE PHOTOLUMINESCENCE INTENSITY OF SIER
Authors: SOBOLEV NA BRESLER MS GUSEV OB SHEK EI MAKAVIICHUK MI PARSHIN EO
Citation: Na. Sobolev et al., EFFECT OF ANNEALING CONDITIONS ON THE PHOTOLUMINESCENCE INTENSITY OF SIER, Semiconductors, 28(11), 1994, pp. 1100-1102
PHYSICAL-PROPERTIES AND PHOTOLUMINESCENCE OF POROUS SILICON
Authors: BRESLER MS YASSIEVICH IN
Citation: Ms. Bresler et In. Yassievich, PHYSICAL-PROPERTIES AND PHOTOLUMINESCENCE OF POROUS SILICON, Semiconductors, 27(5), 1993, pp. 475-481
RADIATION RECOMBINATION IN TYPE-II N-GAINASSB N-GASB HETEROJUNCTIONS/
Authors: BRESLER MS GUSEV OB TITKOV AN CHEBAN VN YAKOVLEV YP HULICIUS E OSWALD J PANGRAC J SIMECEK T
Citation: Ms. Bresler et al., RADIATION RECOMBINATION IN TYPE-II N-GAINASSB N-GASB HETEROJUNCTIONS/, Semiconductors, 27(4), 1993, pp. 341-345
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