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Results: 1-25 | 26-36
Results: 1-25/36
Magneto-photoluminescence studies of Cd(Mn)Se/Zn(Mn)Se diluted magnetic nanostructures
Authors: Toropov, AA Sorokin, SV Kuritsyn, KA Ivanov, SV Pozina, G Bergman, JP Wagner, M Chen, WM Monemar, B Waag, A Yakovlev, DR Sas, C Ossau, W Landwehr, G
Citation: Aa. Toropov et al., Magneto-photoluminescence studies of Cd(Mn)Se/Zn(Mn)Se diluted magnetic nanostructures, PHYSICA E, 10(1-3), 2001, pp. 362-367
Material characterization need for SiC-based devices
Authors: Janzen, E Henry, A Bergman, JP Ellison, A Magnusson, B
Citation: E. Janzen et al., Material characterization need for SiC-based devices, MAT SC S PR, 4(1-3), 2001, pp. 181-186
Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant
Authors: Pozina, G Bergman, JP Monemar, B Yamaguchi, S Amano, H Akasaki, I
Citation: G. Pozina et al., Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant, MAT SCI E B, 82(1-3), 2001, pp. 137-139
Optical characterization of InGaN/GaN MQW structures without in phase separation
Authors: Monemar, B Paskov, PP Pozina, G Paskova, T Bergman, JP Iwaya, M Nitta, S Amano, H Akasaki, I
Citation: B. Monemar et al., Optical characterization of InGaN/GaN MQW structures without in phase separation, PHYS ST S-B, 228(1), 2001, pp. 157-160
Dynamic properties of radiative recombination in p-type delta-doped layersin GaAs - art. no. 125337
Authors: Zhao, QX Willander, M Bergman, JP Holtz, PO Lu, W Shen, SC
Citation: Qx. Zhao et al., Dynamic properties of radiative recombination in p-type delta-doped layersin GaAs - art. no. 125337, PHYS REV B, 6312(12), 2001, pp. 5337
Time-resolved photoluminescence in strained GaN layers
Authors: Pozina, G Edwards, NV Bergman, JP Monemar, B Bremser, MD Davis, RF
Citation: G. Pozina et al., Time-resolved photoluminescence in strained GaN layers, PHYS ST S-A, 183(1), 2001, pp. 151-155
Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport
Authors: Pozina, G Bergman, JP Monemar, B Iwaya, M Nitta, S Amano, H Akasaki, I
Citation: G. Pozina et al., Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport, J CRYST GR, 230(3-4), 2001, pp. 473-476
Luminescence from stacking faults in 4H SiC
Authors: Sridhara, SG Carlsson, FHC Bergman, JP Janzen, E
Citation: Sg. Sridhara et al., Luminescence from stacking faults in 4H SiC, APPL PHYS L, 79(24), 2001, pp. 3944-3946
Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition
Authors: Pozina, G Edwards, NV Bergman, JP Paskova, T Monemar, B Bremser, MD Davis, RF
Citation: G. Pozina et al., Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition, APPL PHYS L, 78(8), 2001, pp. 1062-1064
Pseudodonor nature of the D-I defect in 4H-SiC
Authors: Storasta, L Carlsson, FHC Sridhara, SG Bergman, JP Henry, A Egilsson, T Hallen, A Janzen, E
Citation: L. Storasta et al., Pseudodonor nature of the D-I defect in 4H-SiC, APPL PHYS L, 78(1), 2001, pp. 46-48
Excitons as a probe of interface morphology in Cd(Zn) Se/ZnSe heterostructures
Authors: Toropov, AA Shubina, TV Sorokin, SV Kyutt, RN Ivanov, SV Pozina, GR Bergman, JP Monemar, B Karlsteen, M Willander, M
Citation: Aa. Toropov et al., Excitons as a probe of interface morphology in Cd(Zn) Se/ZnSe heterostructures, APPL SURF S, 166(1-4), 2000, pp. 278-283
Multiple peak spectra from InGaN/GaN multiple quantum wells
Authors: Pozina, G Bergman, JP Bonemar, B Takeuchi, T Amano, H Akasaki, I
Citation: G. Pozina et al., Multiple peak spectra from InGaN/GaN multiple quantum wells, PHYS ST S-A, 180(1), 2000, pp. 85-89
MBE growth and properties of bulk BeCdSe alloys and digital (BeSe : CdSe)/ZnSe quantum wells
Authors: Ivanov, SV Toropov, AA Shubina, TV Lebedev, AV Sorokin, SV Sitnikova, AA Kop'ev, PS Reuscher, G Keim, M Bensing, F Waag, A Landwehr, G Pozina, G Bergman, JP Monemar, B
Citation: Sv. Ivanov et al., MBE growth and properties of bulk BeCdSe alloys and digital (BeSe : CdSe)/ZnSe quantum wells, J CRYST GR, 214, 2000, pp. 109-114
Quasi-zero-dimensional excitons in quantum well structures of CdTe/CdMnTe
Authors: Godlewski, M Narkowicz, R Wojtowicz, T Bergman, JP Monemar, B
Citation: M. Godlewski et al., Quasi-zero-dimensional excitons in quantum well structures of CdTe/CdMnTe, J CRYST GR, 214, 2000, pp. 420-423
Dynamics of excitons near the mobility edge in CdSe/ZnSe superlattices
Authors: Toropov, AA Shubina, TV Lebedev, AV Sorokin, SV Ivanov, SV Pozina, GR Bergman, JP Monemar, B
Citation: Aa. Toropov et al., Dynamics of excitons near the mobility edge in CdSe/ZnSe superlattices, J CRYST GR, 214, 2000, pp. 806-809
Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells
Authors: Pozina, G Bergman, JP Monemar, B Takeuchi, T Amano, H Akasaki, I
Citation: G. Pozina et al., Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells, J APPL PHYS, 88(5), 2000, pp. 2677-2681
Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy
Authors: Buyanova, IA Pozina, G Hai, PN Thinh, NQ Bergman, JP Chen, WM Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy, APPL PHYS L, 77(15), 2000, pp. 2325-2327
InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxywith mass transport
Authors: Pozina, G Bergman, JP Monemar, B Iwaya, M Nitta, S Amano, H Akasaki, I
Citation: G. Pozina et al., InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxywith mass transport, APPL PHYS L, 77(11), 2000, pp. 1638-1640
Comment on "Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure" [Appl. Phys. Lett. 73, 2471 (1998)]
Authors: Monemar, B Bergman, JP Holtz, PO
Citation: B. Monemar et al., Comment on "Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure" [Appl. Phys. Lett. 73, 2471 (1998)], APPL PHYS L, 76(5), 2000, pp. 655-655
Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant
Authors: Pozina, G Bergman, JP Monemar, B Yamaguchi, S Amano, H Akasaki, I
Citation: G. Pozina et al., Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant, APPL PHYS L, 76(23), 2000, pp. 3388-3390
High temperature CVD growth of SiC
Authors: Ellison, A Zhang, J Peterson, J Henry, A Wahab, Q Bergman, JP Makarov, YN Vorob'ev, A Vehanen, A Janzen, E
Citation: A. Ellison et al., High temperature CVD growth of SiC, MAT SCI E B, 61-2, 1999, pp. 113-120
Mechanism of radiative recombination in acceptor-doped bulk GaN crystals
Authors: Godlewski, M Suski, T Grzegory, I Porowski, S Bergman, JP Chen, WM Monemar, B
Citation: M. Godlewski et al., Mechanism of radiative recombination in acceptor-doped bulk GaN crystals, PHYSICA B, 274, 1999, pp. 39-42
Dynamics of the bound excitons in GaN epilayers grown by hydride vapor phase epitaxy
Authors: Pozina, G Bergman, JP Paskova, T Monemar, B
Citation: G. Pozina et al., Dynamics of the bound excitons in GaN epilayers grown by hydride vapor phase epitaxy, PHYS ST S-B, 216(1), 1999, pp. 45-49
Optical properties of an AlInN interface layer spontaneously formed in hexagonal InN/sapphire heterostructures
Authors: Shubina, TV Mamutin, VV Vekshin, VA Ratnikov, VV Toropov, AA Sitnikova, AA Ivanov, SV Karlsteen, M Sodervall, U Willander, M Pozina, G Bergman, JP Monemar, B
Citation: Tv. Shubina et al., Optical properties of an AlInN interface layer spontaneously formed in hexagonal InN/sapphire heterostructures, PHYS ST S-B, 216(1), 1999, pp. 205-209
Optical and structural characterization of Ga(In)N three-dimensional nanostructures grown by plasma-assisted molecular beam epitaxy
Authors: Pozina, G Bergman, JP Monemar, B Mamutin, VV Shubina, TV Vekshin, VA Toropov, AA Ivanov, SV Karlsteen, M Willander, M
Citation: G. Pozina et al., Optical and structural characterization of Ga(In)N three-dimensional nanostructures grown by plasma-assisted molecular beam epitaxy, PHYS ST S-B, 216(1), 1999, pp. 445-450
Risultati: 1-25 | 26-36