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Results:
1-18
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Results: 18
Authors:
SEGUIN JL
ELHADADI B
CARCHANO H
AGUIR K
Citation: Jl. Seguin et al., COMPOSITION STUDY OF HIGH-TEMPERATURE SPUTTERED AMORPHOUS GAXAS1-X FILMS, Journal of non-crystalline solids, 238(3), 1998, pp. 253-258
Authors:
BANDET J
AGUIR K
LOLLMAN D
FENNOUH A
CARCHANO H
Citation: J. Bandet et al., RAMAN AND ELECTRICAL CHARACTERIZATIONS OF A-GAAS1-XNX THIN-FILMS GROWN ON C-SI(P) SUBSTRATES BY N-2 REACTIVE SPUTTERING, JPN J A P 1, 36(1A), 1997, pp. 11-18
Authors:
LOLLMAN D
AGUIR K
ROUMIGUIERES B
CARCHANO H
Citation: D. Lollman et al., AMORPHOUS GAAS1-XNX THIN-FILMS ON CRYSTALLINE SI SUBSTRATES - GROWTH AND CHARACTERIZATIONS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1568-1571
Authors:
AGUIR K
LOLLMAN DBB
CARCHANO H
Citation: K. Aguir et al., THE EVOLUTION OF A-GAAS1-XNX C-GAAS INTERFACE STATES AS A FUNCTION OFAR-NH3 PLASMA/, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 157-160
Authors:
LOLLMAN D
AGUIR K
BANDET J
ROUMIGUIERES B
CARCHANO H
Citation: D. Lollman et al., III-V NITRIDE MATERIALS - AN APPROACH THROUGH AMORPHOUS GAAS1-XNX THIN-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 283-287
Authors:
PESTY O
CANET P
LALANDE F
CARCHANO H
LOLLMAN D
Citation: O. Pesty et al., ELECTRICAL AND PHOTOELECTRICAL CHARACTERIZATION OF GAASXSY POLYCRYSTALLINE THIN-FILMS, Thin solid films, 296(1-2), 1997, pp. 114-117
Authors:
BENDAHAN M
SEGUIN JL
LOLLMAN D
CARCHANO H
Citation: M. Bendahan et al., NEW-TYPE OF SCHOTTKY BARRIERS USING NITI SHAPE-MEMORY ALLOY-FILMS, Thin solid films, 294(1-2), 1997, pp. 278-280
Authors:
BENDAHAN M
SEGUIN JL
CARCHANO H
Citation: M. Bendahan et al., THE MAKING AND CHARACTERIZATION OF A SCHO TTKY-BARRIER USING NITI SHAPE-MEMORY ALLOY AS RECTIFYING CONTACT, Comptes rendus de l'Academie des sciences. Serie II. Mecanique, physique, chimie, astronomie, 322(10), 1996, pp. 747-753
Authors:
BENDAHAN M
SEGUIN JL
CANET P
CARCHANO H
Citation: M. Bendahan et al., NITI SHAPE-MEMORY ALLOY THIN-FILMS - COMPOSITION CONTROL USING OPTICAL-EMISSION SPECTROSCOPY, Thin solid films, 283(1-2), 1996, pp. 61-66
Authors:
LAUQUE P
CARCHANO H
JACOLIN C
Citation: P. Lauque et al., GLOW-DISCHARGE (COLD-PLASMA) POLYMERIZATI ON FOR COATING THE INTERNALSURFACE OF A CATHETER, European Polymer Journal, 32(6), 1996, pp. 725-733
Authors:
AGUIR K
FENNOUH A
CARCHANO H
LOLLMAN D
Citation: K. Aguir et al., ELECTRICAL-PROPERTIES OF A-GAAS C-GAAS(N) AND MIS-TYPE A-GAASN/C-GAAS(N) HETEROSTRUCTURES/, Journal de physique. III, 5(10), 1995, pp. 1573-1585
Authors:
BENDAHAN M
CANET P
SEGUIN JL
CARCHANO H
Citation: M. Bendahan et al., CONTROL COMPOSITION STUDY OF SPUTTERED NI-TI SHAPE-MEMORY ALLOY FILM, Materials science & engineering. B, Solid-state materials for advanced technology, 34(2-3), 1995, pp. 112-115
Authors:
FENNOUH A
AGUIR K
CARCHANO H
SEGUIN JL
Citation: A. Fennouh et al., ELECTRICAL CHARACTERISTICS OF AMORPHOUS GAAS-N-CRYSTALLINE SI HETEROJUNCTIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 34(1), 1995, pp. 27-31
Authors:
AGUIR K
FENNOUH A
CARCHANO H
SEGUIN JL
ELHADADI B
LALANDE F
Citation: K. Aguir et al., ELECTRICAL-PROPERTIES OF A-GAAS C-SI(P) HETEROJUNCTIONS/, Thin solid films, 257(1), 1995, pp. 98-103
Authors:
SEGUIN JL
ELHADADI B
CARCHANO H
FENNOUH A
AGUIR K
Citation: Jl. Seguin et al., HIGH-TEMPERATURE SPUTTERED AMORPHOUS GAAS, Journal of non-crystalline solids, 183(1-2), 1995, pp. 175-181
Authors:
LALANDE F
CARCHANO H
SOGOYOU B
Citation: F. Lalande et al., PHOTOELECTRICAL PROPERTIES OF AU GAAS(1-X)SX/MO STRUCTURES AS A FUNCTION OF SULFUR CONCENTRATION/, Solid-state electronics, 36(7), 1993, pp. 981-984
Authors:
SOGOYOU B
LALANDE F
CARCHANO H
Citation: B. Sogoyou et al., INFLUENCE OF SULFUR CONCENTRATION ON THE CURRENT-VOLTAGE CHARACTERISTICS OF AU GAAS(1-X)SX/MO STRUCTURES/, Solid-state electronics, 36(6), 1993, pp. 927-932
Authors:
LALANDE F
CARCHANO H
POURCIN J
Citation: F. Lalande et al., THE CHARACTERIZATION OF SULFUR INCORPORATION IN GAAS(1-X)SX COMPOUND BY INFRARED-SPECTROSCOPY, Solid state communications, 86(2), 1993, pp. 73-78
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