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Results: 1-25 |
Results: 25
INDIUM LAYERS IN LOW-TEMPERATURE GALLIUM-ARSENIDE - STRUCTURE AND HOWIT CHANGES UNDER ANNEALING IN THE TEMPERATURE-RANGE 500-700-DEGREES-C
Authors: BERT NA SUVOROVA AA CHALDYSHEV VV MUSIKHIN YG PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR WERNER R
Citation: Na. Bert et al., INDIUM LAYERS IN LOW-TEMPERATURE GALLIUM-ARSENIDE - STRUCTURE AND HOWIT CHANGES UNDER ANNEALING IN THE TEMPERATURE-RANGE 500-700-DEGREES-C, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 683-688
EFFECT OF ISOVALENT INDIUM DOPING ON EXCESS ARSENIC IN GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES
Authors: CHALDYSHEV VV KUNITSYN AE TRETYAKOV VV FALEEV NN PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Vv. Chaldyshev et al., EFFECT OF ISOVALENT INDIUM DOPING ON EXCESS ARSENIC IN GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 692-695
NANOMETER-SIZE ATOMIC CLUSTERS IN SEMICONDUCTORS - A NEW APPROACH TO TAILORING MATERIAL PROPERTIES
Authors: MILVIDSKII MG CHALDYSHEV VV
Citation: Mg. Milvidskii et Vv. Chaldyshev, NANOMETER-SIZE ATOMIC CLUSTERS IN SEMICONDUCTORS - A NEW APPROACH TO TAILORING MATERIAL PROPERTIES, Semiconductors, 32(5), 1998, pp. 457-465
ARSENIC CLUSTER SUPERLATTICE IN GALLIUM-ARSENIDE GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY
Authors: CHALDYSHEV VV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR BERT NA KUNITSYN AE MUSIKHIN YG TRETYAKOV VV WERNER P
Citation: Vv. Chaldyshev et al., ARSENIC CLUSTER SUPERLATTICE IN GALLIUM-ARSENIDE GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1036-1039
ACCUMULATION OF ELECTRONS IN GAAS-LAYERS GROWN AT LOW-TEMPERATURES AND CONTAINING ARSENIC CLUSTERS
Authors: BRUNKOV PN CHALDYSHEV VV BERT NA SUVOROVA AA KONNIKOV SG CHERNIGOVSKII AV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Pn. Brunkov et al., ACCUMULATION OF ELECTRONS IN GAAS-LAYERS GROWN AT LOW-TEMPERATURES AND CONTAINING ARSENIC CLUSTERS, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1044-1047
HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF INAS-GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE
Authors: FALEEV NN CHALDYSHEV VV KUNITSYN AE TRETYAKOV VV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Nn. Faleev et al., HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF INAS-GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE, Semiconductors, 32(1), 1998, pp. 19-25
EPMA DETERMINATION OF ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS
Authors: CHALDYSHEV VV TRETYAKOV VV
Citation: Vv. Chaldyshev et Vv. Tretyakov, EPMA DETERMINATION OF ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS, Mikrochimica acta (1966), 1998, pp. 187-189
BISTABILITY OF CHARGE ACCUMULATED IN LOW-TEMPERATURE-GROWN GAAS
Authors: BROUNKOV PN CHALDYSHEV VV SUVOROVA AA BERT NA KONNIKOV SG CHERNIGOVSKII AV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Pn. Brounkov et al., BISTABILITY OF CHARGE ACCUMULATED IN LOW-TEMPERATURE-GROWN GAAS, Applied physics letters, 73(19), 1998, pp. 2796-2798
PROPERTIES OF TELLURIUM-DOPED GALLIUM ANTIMONIDE SINGLE-CRYSTALS GROWN FROM NONSTOICHIOMETRIC MELT
Authors: KUNITSYN AE CHALDYSHEV VV MILVIDSKAYA AG MILVIDSKII MG
Citation: Ae. Kunitsyn et al., PROPERTIES OF TELLURIUM-DOPED GALLIUM ANTIMONIDE SINGLE-CRYSTALS GROWN FROM NONSTOICHIOMETRIC MELT, Semiconductors, 31(8), 1997, pp. 806-808
SILICON AND PHOSPHORUS COIMPLANTATION INTO UNDOPED AND INDIUM-DOPED GAAS SUBSTRATES
Authors: DYMOVA NN KUNITSYN AE CHALDYSHEV VV MARKOV AV
Citation: Nn. Dymova et al., SILICON AND PHOSPHORUS COIMPLANTATION INTO UNDOPED AND INDIUM-DOPED GAAS SUBSTRATES, Semiconductors, 31(12), 1997, pp. 1217-1220
OSTWALD RIPENING IN 2-DIMENSIONAL AND 3-DIMENSIONAL SYSTEMS OF AS CLUSTERS IN LOW-TEMPERATURE-GROWN GAAS FILMS
Authors: CHALDYSHEV VV BERT NA PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Vv. Chaldyshev et al., OSTWALD RIPENING IN 2-DIMENSIONAL AND 3-DIMENSIONAL SYSTEMS OF AS CLUSTERS IN LOW-TEMPERATURE-GROWN GAAS FILMS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 238(1), 1997, pp. 148-151
2-DIMENSIONAL PRECIPITATION OF AS CLUSTERS DUE TO INDIUM DELTA-DOPINGOF GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE
Authors: BERT NA CHALDYSHEV VV FALEEV NN KUNITSYN AE LUBYSHEV DI PREOBRAZHENSKII VV SEMYAGIN BR TRETYAKOV VV
Citation: Na. Bert et al., 2-DIMENSIONAL PRECIPITATION OF AS CLUSTERS DUE TO INDIUM DELTA-DOPINGOF GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE, Semiconductor science and technology, 12(1), 1997, pp. 51-54
FORMATION OF N(-LAYERS IN UNDOPED AND INDIUM-DOPED GAAS WAFERS BY SI AND SI+P ION-IMPLANTATION())
Authors: CHALDYSHEV VV DYMOVA NN KUNITSYN AE MARKOV AV
Citation: Vv. Chaldyshev et al., FORMATION OF N(-LAYERS IN UNDOPED AND INDIUM-DOPED GAAS WAFERS BY SI AND SI+P ION-IMPLANTATION()), Physica status solidi. a, Applied research, 163(1), 1997, pp. 81-86
ENHANCED ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS DUE TO INDIUM DOPING
Authors: BERT NA CHALDYSHEV VV KUNITSYN AE MUSIKHIN YG FALEEV NN TRETYAKOV VV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Na. Bert et al., ENHANCED ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS DUE TO INDIUM DOPING, Applied physics letters, 70(23), 1997, pp. 3146-3148
PHOTOLUMINESCENCE OF TIN-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY FROM A MIXED GA-BI SOLVENT
Authors: CHALDYSHEV VV YAKUSHEVA NA
Citation: Vv. Chaldyshev et Na. Yakusheva, PHOTOLUMINESCENCE OF TIN-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY FROM A MIXED GA-BI SOLVENT, Semiconductors, 30(2), 1996, pp. 185-190
CHANGES IN THE MOIRE PATTERNS IN ELECTRON-MICROSCOPE IMAGES OF AS CLUSTERS IN LT-GAAS AS THEIR SIZE DECREASES
Authors: BERT NA CHALDYSHEV VV
Citation: Na. Bert et Vv. Chaldyshev, CHANGES IN THE MOIRE PATTERNS IN ELECTRON-MICROSCOPE IMAGES OF AS CLUSTERS IN LT-GAAS AS THEIR SIZE DECREASES, Semiconductors, 30(10), 1996, pp. 988-989
ARSENIC SEGREGATION ON GALLIUM-ARSENIDE G ROWN BY THE MOLECULAR-RAY EPITAXY TECHNIQUE AT LOW-TEMPERATURE
Authors: GORDEEV YS MIKUSHKIN VM NIKONOV SY SYUSOEV SE CHALDYSHEV VV
Citation: Ys. Gordeev et al., ARSENIC SEGREGATION ON GALLIUM-ARSENIDE G ROWN BY THE MOLECULAR-RAY EPITAXY TECHNIQUE AT LOW-TEMPERATURE, Fizika tverdogo tela, 38(11), 1996, pp. 3299-3307
MAGNET-DEPENDENT MICROWAVE-ABSORPTION CAU SED BY SUPERCONDUCTING IN-GA-CLUSTERS IN GAAS GROWN BY MOLECULAR-RAY EPITAXY
Authors: VEINGER AI KOZYREV SV CHALDYSHEV VV VILISOVA MD LAVRENTEVA LG IVONIN IV LUBYSHEV DI PREOBRAZHENSKII VV SEMYAGIN BR
Citation: Ai. Veinger et al., MAGNET-DEPENDENT MICROWAVE-ABSORPTION CAU SED BY SUPERCONDUCTING IN-GA-CLUSTERS IN GAAS GROWN BY MOLECULAR-RAY EPITAXY, Fizika tverdogo tela, 38(10), 1996, pp. 2897-2904
LUMINESCENCE AND STRUCTURAL STUDIES OF GASB SINGLE-CRYSTALS GROWN FROM NONSTOICHIOMETRIC MELTS
Authors: BERT NA KUNITSYN AE CHALDYSHEV VV MILVIDSKAYA AG MILVIDSKII MG
Citation: Na. Bert et al., LUMINESCENCE AND STRUCTURAL STUDIES OF GASB SINGLE-CRYSTALS GROWN FROM NONSTOICHIOMETRIC MELTS, Semiconductors, 29(6), 1995, pp. 578-580
SPATIAL ORDERING OF ARSENIC CLUSTERS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE
Authors: BERT NA CHALDYSHEV VV LUBYSHEV DI PREOBRAZHENSKII VV SEMYAGIN BR
Citation: Na. Bert et al., SPATIAL ORDERING OF ARSENIC CLUSTERS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE, Semiconductors, 29(12), 1995, pp. 1170-1171
ANALYSIS OF THE PHOTOLUMINESCENCE SPECTRA OF GAAS-LAYERS GROWN FROM GA-BI FLUX SOLUTIONS
Authors: KUNITSYN AE NOVIKOV SV CHALDYSHEV VV
Citation: Ae. Kunitsyn et al., ANALYSIS OF THE PHOTOLUMINESCENCE SPECTRA OF GAAS-LAYERS GROWN FROM GA-BI FLUX SOLUTIONS, Semiconductors, 29(11), 1995, pp. 1090-1091
VAPOR-PHASE EPITAXIAL GROWN GAAS FILMS WITH A VERY-LOW DEEP-LEVEL CONCENTRATION
Authors: CHALDYSHEV VV ASTROVA EV LEBEDEV AA BOBROVNIKOVA IA CHERNOV NA IVLEVA OM LAVRENTIEVA LG TETERKINA IV VILISOVA MD
Citation: Vv. Chaldyshev et al., VAPOR-PHASE EPITAXIAL GROWN GAAS FILMS WITH A VERY-LOW DEEP-LEVEL CONCENTRATION, Journal of crystal growth, 146(1-4), 1995, pp. 246-250
PREPARATION OF FULLERENE FILMS ON GAAS SE MICONDUCTING SUBSTRATES
Authors: KUNITSYN AE KOZYREV SV NOVIKOV SV SAVELEV IG CHALDYSHEV VV SHARONOVA LV
Citation: Ae. Kunitsyn et al., PREPARATION OF FULLERENE FILMS ON GAAS SE MICONDUCTING SUBSTRATES, Fizika tverdogo tela, 36(9), 1994, pp. 2573-2579
FEASIBILITY OF FORMATION OF IN0.52AL0.48AS FILMS ISOPERIODIC WITH THEINP SUBSTRATES BY LIQUID-PHASE EPITAXY AT LOW (SIMILAR-TO-650-DEGREES-C) TEMPERATURES
Authors: BER BY BYSTROV SD ZUSHINSKII DA KORNYAKOVA OV TUAN L NOVIKOV SV SAVELEV IG TRETYAKOV VV CHALDYSHEV VV SHMARTSEV YV
Citation: By. Ber et al., FEASIBILITY OF FORMATION OF IN0.52AL0.48AS FILMS ISOPERIODIC WITH THEINP SUBSTRATES BY LIQUID-PHASE EPITAXY AT LOW (SIMILAR-TO-650-DEGREES-C) TEMPERATURES, Semiconductors, 27(9), 1993, pp. 818-820
LOW-TEMPERATURE, MBE-GROWN GALLIUM-ARSENI DE - CRYSTALLINE-STRUCTURE,PROPERTIES, SUPERCONDUCTIVITY
Authors: BERT NA VEINGER AI VILISOVA MD GOLOSHCHAPOV SI IVONIN IV KOZYREV SV KUNITSYN AE LAVRENTYEVA LG LUBYSHEV DI PREOBRAZHENSKII VV SEMYAGIN BR TRETYAKOV VV CHALDYSHEV VV YAKUBENYA MP
Citation: Na. Bert et al., LOW-TEMPERATURE, MBE-GROWN GALLIUM-ARSENI DE - CRYSTALLINE-STRUCTURE,PROPERTIES, SUPERCONDUCTIVITY, Fizika tverdogo tela, 35(10), 1993, pp. 2609-2625
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