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Results: 1-25/36
Authors:
OUISSE T
MAUDE DK
HORIGUCHI S
ONO Y
TAKAHASHI Y
MURASE K
CRISTOLOVEANU S
Citation: T. Ouisse et al., SUBBAND STRUCTURE AND ANOMALOUS VALLEY SPLITTING IN ULTRA-THIN SILICON-ON-INSULATOR MOSFETS, Physica. B, Condensed matter, 251, 1998, pp. 731-734
Authors:
MUNTEANU D
WEISER DA
CRISTOLOVEANU S
FAYNOT O
PELLOIE JL
FOSSUM JG
Citation: D. Munteanu et al., GENERATION-RECOMBINATION TRANSIENT EFFECTS IN PARTIALLY DEPLETED SOI TRANSISTORS - SYSTEMATIC EXPERIMENTS AND SIMULATIONS, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1678-1683
Authors:
FOSSUM JG
CRISTOLOVEANU S
YOSHIMI M
Citation: Jg. Fossum et al., SOI INTEGRATED-CIRCUITS AND DEVICES - FOREWORD, I.E.E.E. transactions on electron devices, 45(5), 1998, pp. 998-999
Authors:
FACCIO F
ANGHINOLFI F
HEIJNE EHM
JARRON P
CRISTOLOVEANU S
Citation: F. Faccio et al., NOISE CONTRIBUTION OF THE BODY RESISTANCE IN PARTIALLY-DEPLETED SOI MOSFETS, I.E.E.E. transactions on electron devices, 45(5), 1998, pp. 1033-1038
Authors:
BOUSSEY J
CRISTOLOVEANU S
Citation: J. Boussey et S. Cristoloveanu, LOW-POWER, LOW-VOLTAGE INTEGRATED-CIRCUITS - TECHNOLOGY AND DESIGN - PREFACE, Microelectronic engineering, 39(1-4), 1997, pp. 7-8
Authors:
CRISTOLOVEANU S
Citation: S. Cristoloveanu, INTRODUCTION TO SILICON-ON-INSULATOR MATERIALS AND DEVICES, Microelectronic engineering, 39(1-4), 1997, pp. 145-154
Authors:
REICHERT G
RAYNAUD C
FAYNOT O
BALESTRA F
CRISTOLOVEANU S
Citation: G. Reichert et al., SUBMICRON SOI-MOSFETS FOR HIGH-TEMPERATURE OPERATION (300-600K), Microelectronic engineering, 36(1-4), 1997, pp. 359-362
Authors:
MUNTEANU D
MALEVILLE C
CRISTOLOVEANU S
MORICEAU H
ASPAR B
RAYNAUD C
FAYNOT O
PELLOIE JL
AUBERTONHERVE AJ
Citation: D. Munteanu et al., DETAILED CHARACTERIZATION OF UNIBOND MATERIAL, Microelectronic engineering, 36(1-4), 1997, pp. 395-398
Authors:
BALESTRA F
CRISTOLOVEANU S
Citation: F. Balestra et S. Cristoloveanu, SPECIAL MECHANISMS IN THIN-FILM SOI MOSFETS, Microelectronics and reliability, 37(9), 1997, pp. 1341-1351
Authors:
CRISTOLOVEANU S
Citation: S. Cristoloveanu, HOT-CARRIER DEGRADATION MECHANISMS IN SILICON-ON-INSULATOR MOSFETS, Microelectronics and reliability, 37(7), 1997, pp. 1003-1013
Authors:
CRISTOLOVEANU S
IONESCU A
WETTEROTH T
SHIN H
MUNTEANU D
GENTIL P
HONG S
WILSON SR
Citation: S. Cristoloveanu et al., INFLUENCE OF NITROGEN OR ARGON ANNEALS ON THE PROPERTIES OF WAFERS AND DEVICES SEPARATED BY IMPLANTATION OF OXYGEN, Journal of the Electrochemical Society, 144(4), 1997, pp. 1468-1473
Authors:
GUICHARD E
LEROUX C
BLACHIER D
REIMBOLD G
CRISTOLOVEANU S
BOREL G
Citation: E. Guichard et al., COMPARISON OF HOT-CARRIERS EFFECTS IN SOI AND BULK DEVICES USING A PHOTON-EMISSION TECHNIQUE, Quality and reliability engineering international, 12(4), 1996, pp. 291-296
Authors:
IONESCU AM
CRISTOLOVEANU S
WILSON SR
RUSU A
CHOVET A
SEGHIR H
Citation: Am. Ionescu et al., IMPROVED CHARACTERIZATION OF FULLY-DEPLETED SOI WAFERS BY PSEUDO-MOS TRANSISTOR, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 228-232
Authors:
REICHERT G
OUISSE T
PELLOIE JL
CRISTOLOVEANU S
Citation: G. Reichert et al., MOBILITY MODELING OF SOI MOSFETS IN THE HIGH-TEMPERATURE RANGE, Solid-state electronics, 39(9), 1996, pp. 1347-1352
Authors:
IONESCU AM
CRISTOLOVEANU S
MUNTEANU D
ELEWA T
GRI M
Citation: Am. Ionescu et al., A NEW LIFETIME CHARACTERIZATION TECHNIQUE USING DRAIN CURRENT TRANSIENTS IN SOI MATERIAL, Solid-state electronics, 39(12), 1996, pp. 1753-1755
Authors:
DIMITRAKIS P
PAPAIOANNOU GJ
CRISTOLOVEANU S
Citation: P. Dimitrakis et al., ELECTRICAL-PROPERTIES OF BURIED OXIDE-SILICON INTERFACE, Journal of applied physics, 80(3), 1996, pp. 1605-1610
Authors:
DECEUSTER D
FLANDRE D
COLINGE JP
CRISTOLOVEANU S
Citation: D. Deceuster et al., IMPROVEMENT OF SOI MOS CURRENT-MIRROR PERFORMANCES USING SERIAL-PARALLEL ASSOCIATION OF TRANSISTORS, Electronics Letters, 32(4), 1996, pp. 278-279
Authors:
CRISTOLOVEANU S
ELEWA T
Citation: S. Cristoloveanu et T. Elewa, MODEL FOR CARRIER LIFETIME EXTRACTION FROM PSEUDO-MOSFET TRANSIENTS, Electronics Letters, 32(21), 1996, pp. 2021-2023
Authors:
OUISSE T
REICHERT G
CRISTOLOVEANU S
FAYNOT O
GIFFARD B
Citation: T. Ouisse et al., ANALYSIS OF SIMOX METAL-OXIDE-SEMICONDUCTOR TRANSISTORS OPERATED IN THE HIGH-TEMPERATURE RANGE, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 21-23
Authors:
FOSSUM JG
KRISHNAN S
FAYNOT O
CRISTOLOVEANU S
RAYNAUD C
Citation: Jg. Fossum et al., SUBTHRESHOLD KINKS IN FULLY DEPLETED SOI MOSFETS, IEEE electron device letters, 16(12), 1995, pp. 542-544
Authors:
GUILLEMOT N
CRISTOLOVEANU S
Citation: N. Guillemot et S. Cristoloveanu, INFOS95 - PROCEEDINGS OF THE 9TH BIENNIAL CONFERENCE ON INSULATING FILMS ON SEMICONDUCTORS - JUNE 7-10, 1995 VILLARD-DE-LANS, FRANCE - PREFACE, Microelectronic engineering, 28(1-4), 1995, pp. 7-8
Authors:
MCLARTY PK
CRISTOLOVEANU S
FAYNOT O
MISRA V
HAUSER JR
WORTMAN JJ
Citation: Pk. Mclarty et al., A SIMPLE PARAMETER EXTRACTION METHOD FOR ULTRA-THIN OXIDE MOSFETS, Solid-state electronics, 38(6), 1995, pp. 1175-1177
Authors:
FAYNOT O
CRISTOLOVEANU S
AUBERTONHERVE AJ
RAYNAUD C
Citation: O. Faynot et al., PERFORMANCE AND POTENTIAL OF ULTRATHIN ACCUMULATION-MODE SIMOX MOSFETS, I.E.E.E. transactions on electron devices, 42(4), 1995, pp. 713-719
Authors:
FIKRY W
GHIBAUDO G
HADDARA H
CRISTOLOVEANU S
DUTOIT M
Citation: W. Fikry et al., METHOD FOR EXTRACTING DEEP-SUBMICROMETER MOSFET PARAMETERS, Electronics Letters, 31(9), 1995, pp. 762-764
Authors:
FLANDRE D
CRISTOLOVEANU S
Citation: D. Flandre et S. Cristoloveanu, LATCH AND HOT-ELECTRON GATE CURRENT IN ACCUMULATION-MODE SOI P-MOSFETS, IEEE electron device letters, 15(5), 1994, pp. 157-159