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Results: 1-18 |
Results: 18
Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges
Authors: Guilhaume, A Galy, P Chante, JP Foucher, B Blanc, F
Citation: A. Guilhaume et al., Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges, MICROEL REL, 41(9-10), 2001, pp. 1433-1437
Lift-off technology for SiCUV detectors
Authors: Badila, M Brezeanu, G Millan, J Godignon, P Locatelli, ML Chante, JP Lebedev, A Lungu, P Dinca, G Banu, V Banoiu, G
Citation: M. Badila et al., Lift-off technology for SiCUV detectors, DIAM RELAT, 9(3-6), 2000, pp. 994-997
Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
Authors: Savkina, NS Lebedev, AA Davydov, DV Strel'chuk, AM Tregubova, AS Raynaud, C Chante, JP Locatelli, ML Planson, D Milan, J Godignon, P Campos, FJ Mestres, N Pascual, J Brezeanu, G Badila, M
Citation: Ns. Savkina et al., Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy, MAT SCI E B, 77(1), 2000, pp. 50-54
Electrothermal modeling of IGBT's: Application to short-circuit conditions
Authors: Ammous, A Ammous, K Morel, H Allard, B Bergogne, D Sellami, F Chante, JP
Citation: A. Ammous et al., Electrothermal modeling of IGBT's: Application to short-circuit conditions, IEEE POW E, 15(4), 2000, pp. 778-790
Electrical characteristics modeling of large area boron compensated 6H-SiCpn structures
Authors: Brezeanu, G Badila, M Tudor, B Godignon, P Millan, J Locatelli, ML Chante, JP Lebedev, A Savkina, NS
Citation: G. Brezeanu et al., Electrical characteristics modeling of large area boron compensated 6H-SiCpn structures, SOL ST ELEC, 44(4), 2000, pp. 571-579
Numerical investigation for a Grounded Gate NMOS Transistor under electrostatic discharge (ESD) through TLP method
Authors: Galy, P Berland, V Foucher, B Lombaert-Valot, I Guilhaume, A Chante, JP Dufrenne, S Bardy, S
Citation: P. Galy et al., Numerical investigation for a Grounded Gate NMOS Transistor under electrostatic discharge (ESD) through TLP method, MICROEL REL, 40(8-10), 2000, pp. 1473-1477
An improved technology of 6H-SiC power diodes
Authors: Badila, M Brezeanu, G Dilimot, G Millan, J Godignon, P Chante, JP Locatelli, ML Mestres, N Lebedev, A
Citation: M. Badila et al., An improved technology of 6H-SiC power diodes, MICROELEC J, 31(11-12), 2000, pp. 955-962
Temperature behavior of the 6H-SiC pn diodes
Authors: Badila, M Chante, JP Locatelli, ML Millan, J Godignon, P Brezeanu, G Tudor, B Lebedev, A
Citation: M. Badila et al., Temperature behavior of the 6H-SiC pn diodes, DIAM RELAT, 8(2-5), 1999, pp. 341-345
A BiCMOS current conveyor based four-quadrant analog multiplier
Authors: Premont, C Abouchi, N Grisel, R Chante, JP
Citation: C. Premont et al., A BiCMOS current conveyor based four-quadrant analog multiplier, ANALOG IN C, 19(2), 1999, pp. 159-162
Characterisation of deep level trap centres in 6H-SiC p-n junction diodes
Authors: Ghaffour, K Lauer, V Souifi, A Guillot, G Raynaud, C Ortolland, S Iocatelli, ML Chante, JP
Citation: K. Ghaffour et al., Characterisation of deep level trap centres in 6H-SiC p-n junction diodes, MAT SCI E B, 66(1-3), 1999, pp. 106-110
P-N Junction creation in 6H-SiC by aluminum implantation
Authors: Ottaviani, L Locatelli, ML Planson, D Isoird, K Chante, JP Morvan, E Godignon, P
Citation: L. Ottaviani et al., P-N Junction creation in 6H-SiC by aluminum implantation, MAT SCI E B, 61-2, 1999, pp. 424-428
On the interpretation of high frequency capacitance data of 6H-SiC boron compensated pin junction
Authors: Brezeanu, G Badila, M Tudor, B Millan, J Godignon, P Chante, JP Locatelli, ML Lebedev, A Banu, V
Citation: G. Brezeanu et al., On the interpretation of high frequency capacitance data of 6H-SiC boron compensated pin junction, MAT SCI E B, 61-2, 1999, pp. 429-432
Current-voltage characteristics of large area 6H-SiC pin diodes
Authors: Badila, M Tudor, B Brezeanu, G Locatelli, ML Chante, JP Millan, J Godignon, P Lebedev, A Banu, V
Citation: M. Badila et al., Current-voltage characteristics of large area 6H-SiC pin diodes, MAT SCI E B, 61-2, 1999, pp. 433-436
Design of a 600 V silicon carbide vertical power MOSFET
Authors: Planson, D Locatelli, ML Lanois, F Chante, JP
Citation: D. Planson et al., Design of a 600 V silicon carbide vertical power MOSFET, MAT SCI E B, 61-2, 1999, pp. 497-501
Chemical contribution of oxygen to silicon carbide plasma etching kineticsin a distributed electron cyclotron resonance (DECR) reactor
Authors: Lanois, F Planson, D Locatelli, ML Lassagne, P Jaussaud, C Chante, JP
Citation: F. Lanois et al., Chemical contribution of oxygen to silicon carbide plasma etching kineticsin a distributed electron cyclotron resonance (DECR) reactor, J ELEC MAT, 28(3), 1999, pp. 219-224
Aluminum multiple implantations in 6H-SiC at 300 K
Authors: Ottaviani, L Morvan, E Locatelli, ML Planson, D Godignon, P Chante, JP Senes, A
Citation: L. Ottaviani et al., Aluminum multiple implantations in 6H-SiC at 300 K, SOL ST ELEC, 43(12), 1999, pp. 2215-2223
Investigations on the thermal behavior of interconnects under ESD transients using a simplified thermal RC network
Authors: Salome, P Leroux, C Crevel, P Chante, JP
Citation: P. Salome et al., Investigations on the thermal behavior of interconnects under ESD transients using a simplified thermal RC network, MICROEL REL, 39(11), 1999, pp. 1579-1591
An attempt to explain thermally induced soft failures during low level ESDstresses: study of the differences between soft and hard NMOS failures
Authors: Salome, P Leroux, C Mariolle, D Lafond, D Chante, JP Crevel, P Reimbold, G
Citation: P. Salome et al., An attempt to explain thermally induced soft failures during low level ESDstresses: study of the differences between soft and hard NMOS failures, MICROEL REL, 38(11), 1998, pp. 1763-1772
Risultati: 1-18 |