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Results: 1-23 |
Results: 23
ROLE OF LOCALIZED AND EXTENDED ELECTRONIC STATES IN INGAN GAN QUANTUM-WELLS UNDER HIGH INJECTION, INFERRED FROM NEAR-FIELD OPTICAL MICROSCOPY/
Authors: VERTIKOV A NURMIKKO AV DOVERSPIKE K BULMAN G EDMOND J
Citation: A. Vertikov et al., ROLE OF LOCALIZED AND EXTENDED ELECTRONIC STATES IN INGAN GAN QUANTUM-WELLS UNDER HIGH INJECTION, INFERRED FROM NEAR-FIELD OPTICAL MICROSCOPY/, Applied physics letters, 73(4), 1998, pp. 493-495
GAIN CHARACTERISTICS OF INGAN GAN QUANTUM-WELL DIODE-LASERS/
Authors: SONG YK KUBALL M NURMIKKO AV BULMAN GE DOVERSPIKE K SHEPPERD ST WEEKS TW LEONARD M KONG HS DIERINGER H EDMOND J
Citation: Yk. Song et al., GAIN CHARACTERISTICS OF INGAN GAN QUANTUM-WELL DIODE-LASERS/, Applied physics letters, 72(12), 1998, pp. 1418-1420
VACANCY STRUCTURES ON THE GAN(0001) SURFACE
Authors: PACKARD WE DOW JD DOVERSPIKE K KAPLAN R NICOLAIDES R
Citation: We. Packard et al., VACANCY STRUCTURES ON THE GAN(0001) SURFACE, Journal of materials research, 12(3), 1997, pp. 646-650
GAN FETS FOR MICROWAVE AND HIGH-TEMPERATURE APPLICATIONS
Authors: BINARI SC DOVERSPIKE K KELNER G DIETRICH HB WICKENDEN AE
Citation: Sc. Binari et al., GAN FETS FOR MICROWAVE AND HIGH-TEMPERATURE APPLICATIONS, Solid-state electronics, 41(2), 1997, pp. 177-180
PULSED OPERATION LASING IN A CLEAVED-FACET INGAN GAN MQW SCH LASER GROWN ON 6H-SIC/
Authors: BULMAN GE DOVERSPIKE K SHEPPARD ST WEEKS TW KONG HS DIERINGER HM EDMOND JA BROWN JD SWINDELL JT SCHETZINA JF
Citation: Ge. Bulman et al., PULSED OPERATION LASING IN A CLEAVED-FACET INGAN GAN MQW SCH LASER GROWN ON 6H-SIC/, Electronics Letters, 33(18), 1997, pp. 1556-1557
SCANNING-TUNNELING-MICROSCOPY OF THE GAN(0001) SURFACE
Authors: PACKARD WE DOW JD NICOLAIDES R DOVERSPIKE K KAPLAN R
Citation: We. Packard et al., SCANNING-TUNNELING-MICROSCOPY OF THE GAN(0001) SURFACE, Superlattices and microstructures, 20(2), 1996, pp. 145-148
MAGNETOOPTICAL STUDIES OF GAN AND GAN ALXGA1-XN - DONOR ZEEMAN SPECTROSCOPY AND 2-DIMENSIONAL ELECTRON-GAS CYCLOTRON-RESONANCE/
Authors: WANG YJ KAPLAN R NG HK DOVERSPIKE K GASKILL DK IKEDO T AKASAKI I AMONO H
Citation: Yj. Wang et al., MAGNETOOPTICAL STUDIES OF GAN AND GAN ALXGA1-XN - DONOR ZEEMAN SPECTROSCOPY AND 2-DIMENSIONAL ELECTRON-GAS CYCLOTRON-RESONANCE/, Journal of applied physics, 79(10), 1996, pp. 8007-8010
THE GROWTH AND PROPERTIES OF AL AND ALN FILMS ON GAN(0001)-(1X1)
Authors: BERMUDEZ VM JUNG TM DOVERSPIKE K WICKENDEN AE
Citation: Vm. Bermudez et al., THE GROWTH AND PROPERTIES OF AL AND ALN FILMS ON GAN(0001)-(1X1), Journal of applied physics, 79(1), 1996, pp. 110-119
THE EFFECT OF GAN AND ALN BUFFER LAYERS ON GAN FILM PROPERTIES GROWN ON BOTH C-PLANE AND A-PLANE SAPPHIRE
Authors: DOVERSPIKE K ROWLAND LB GASKILL DK FREITAS JA
Citation: K. Doverspike et al., THE EFFECT OF GAN AND ALN BUFFER LAYERS ON GAN FILM PROPERTIES GROWN ON BOTH C-PLANE AND A-PLANE SAPPHIRE, Journal of electronic materials, 24(4), 1995, pp. 269-273
THE EFFECT OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH CONDITIONS ON WURTZITE GAN ELECTRON-TRANSPORT PROPERTIES
Authors: GASKILL DK WICKENDEN AE DOVERSPIKE K TADAYON B ROWLAND LB
Citation: Dk. Gaskill et al., THE EFFECT OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH CONDITIONS ON WURTZITE GAN ELECTRON-TRANSPORT PROPERTIES, Journal of electronic materials, 24(11), 1995, pp. 1525-1530
DOPING OF GALLIUM NITRIDE USING DISILANE
Authors: WICKENDEN AE ROWLAND LB DOVERSPIKE K GASKILL DK
Citation: Ae. Wickenden et al., DOPING OF GALLIUM NITRIDE USING DISILANE, Journal of electronic materials, 24(11), 1995, pp. 1547-1550
OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION
Authors: GLASER ER KENNEDY TA DOVERSPIKE K ROWLAND LB GASKILL DK FREITAS JA KHAN MA OLSON DT KUZNIA JN WICKENDEN DK
Citation: Er. Glaser et al., OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION, Physical review. B, Condensed matter, 51(19), 1995, pp. 13326-13336
OBSERVATION OF NANOPIPES IN ALPHA-GAN CRYSTALS
Authors: QIAN W SKOWRONSKI M DOVERSPIKE K ROWLAND LB GASKILL DK
Citation: W. Qian et al., OBSERVATION OF NANOPIPES IN ALPHA-GAN CRYSTALS, Journal of crystal growth, 151(3-4), 1995, pp. 396-400
H, HE, AND N IMPLANT ISOLATION OF N-TYPE GAN
Authors: BINARI SC DIETRICH HB KELNER G ROWLAND LB DOVERSPIKE K WICKENDEN DK
Citation: Sc. Binari et al., H, HE, AND N IMPLANT ISOLATION OF N-TYPE GAN, Journal of applied physics, 78(5), 1995, pp. 3008-3011
THE INFLUENCE OF CH4 H-2/AR PLASMA-ETCHING ON THE CONDUCTIVITY OF N-TYPE GALLIUM NITRIDE/
Authors: MOLNAR B EDDY CR DOVERSPIKE K
Citation: B. Molnar et al., THE INFLUENCE OF CH4 H-2/AR PLASMA-ETCHING ON THE CONDUCTIVITY OF N-TYPE GALLIUM NITRIDE/, Journal of applied physics, 78(10), 1995, pp. 6132-6134
LOW-FREQUENCY DISPERSION CHARACTERISTICS OF GAN HFETS
Authors: KRUPPA W BINARI SC DOVERSPIKE K
Citation: W. Kruppa et al., LOW-FREQUENCY DISPERSION CHARACTERISTICS OF GAN HFETS, Electronics Letters, 31(22), 1995, pp. 1951-1952
PHOTOLUMINESCENCE FROM WURTZITE GAN UNDER HYDROSTATIC-PRESSURE
Authors: KIM SS HERMAN IP TUCHMAN JA DOVERSPIKE K ROWLAND LB GASKILL DK
Citation: Ss. Kim et al., PHOTOLUMINESCENCE FROM WURTZITE GAN UNDER HYDROSTATIC-PRESSURE, Applied physics letters, 67(3), 1995, pp. 380-382
OPEN-CORE SCREW DISLOCATIONS IN GAN EPILAYERS OBSERVED BY SCANNING FORCE MICROSCOPY AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY
Authors: QIAN W ROHRER GS SKOWRONSKI M DOVERSPIKE K ROWLAND LB GASKILL DK
Citation: W. Qian et al., OPEN-CORE SCREW DISLOCATIONS IN GAN EPILAYERS OBSERVED BY SCANNING FORCE MICROSCOPY AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY, Applied physics letters, 67(16), 1995, pp. 2284-2286
SILICON DOPING OF GAN USING DISILANE
Authors: ROWLAND LB DOVERSPIKE K GASKILL DK
Citation: Lb. Rowland et al., SILICON DOPING OF GAN USING DISILANE, Applied physics letters, 66(12), 1995, pp. 1495-1497
MICROSTRUCTURAL CHARACTERIZATION OF ALPHA-GAN FILMS GROWN ON SAPPHIREBY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: QIAN W SKOWRONSKI M DEGRAEF M DOVERSPIKE K ROWLAND LB GASKILL DK
Citation: W. Qian et al., MICROSTRUCTURAL CHARACTERIZATION OF ALPHA-GAN FILMS GROWN ON SAPPHIREBY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Applied physics letters, 66(10), 1995, pp. 1252-1254
LUMINESCENCE STUDIES OF NITROGEN-DOPED AND BORON-DOPED DIAMOND FILMS
Authors: FREITAS JA DOVERSPIKE K KLEIN PB KHONG YL COLLINS AT
Citation: Ja. Freitas et al., LUMINESCENCE STUDIES OF NITROGEN-DOPED AND BORON-DOPED DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 821-824
MICROWAVE PERFORMANCE OF GAN MESFETS
Authors: BINARI SC ROWLAND LB KRUPPA W KELNER G DOVERSPIKE K GASKILL DK
Citation: Sc. Binari et al., MICROWAVE PERFORMANCE OF GAN MESFETS, Electronics Letters, 30(15), 1994, pp. 1248-1249
ELECTRICAL CHARACTERIZATION OF TI SCHOTTKY BARRIERS ON N-TYPE GAN
Authors: BINARI SC DIETRICH HB KELNER G ROWLAND LB DOVERSPIKE K GASKILL DK
Citation: Sc. Binari et al., ELECTRICAL CHARACTERIZATION OF TI SCHOTTKY BARRIERS ON N-TYPE GAN, Electronics Letters, 30(11), 1994, pp. 909-911
Risultati: 1-23 |