AAAAAA

   
Results: 1-25 | 26-33
Results: 1-25/33
GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GAN WITH HYDRAZINE ON SPINEL SUBSTRATES
Authors: NIKISHIN SA TEMKIN H ANTIPOV VG GURIEV AI ZUBRILOV AS ELYUKHIN VA FALEEV NN KYUTT RN CHIN AK
Citation: Sa. Nikishin et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GAN WITH HYDRAZINE ON SPINEL SUBSTRATES, Applied physics letters, 72(19), 1998, pp. 2361-2363
LUMINESCENCE OF GAN GAAS(111)B GROWN BY MOLECULAR-BEAM EPITAXY WITH HYDRAZINE/
Authors: NIKISHIN SA ANTIPOV VG GURIEV AI ELYUKHIN VA FALEEV NN KUDRIAVTSEV YA LEBEDEV AB SHUBINA TV ZUBRILOV AS TEMKIN H
Citation: Sa. Nikishin et al., LUMINESCENCE OF GAN GAAS(111)B GROWN BY MOLECULAR-BEAM EPITAXY WITH HYDRAZINE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1289-1292
SINGLE-PHASE ZNSNAS2 GROWN BY MOLECULAR-BEAM EPITAXY
Authors: SERYOGIN GA NIKISHIN SA TEMKIN H SCHLAF R SHARP LI WEN YC PARKINSON B ELYUKHIN VA KUDRIAVTSEV YA MINTAIROV AM FALEEV NN BAIDAKOVA MV
Citation: Ga. Seryogin et al., SINGLE-PHASE ZNSNAS2 GROWN BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1456-1458
PROPERTIES OF GAINASSB SOLID-SOLUTIONS OBTAINED FROM ANTIMONY FLUXES BY LIQUID-PHASE EPITAXY IN THE SPINODAL DECAY REGION
Authors: VASILEV VI DERYAGIN AG KUCHINSKII VI SMIRNOV VM SOKOLOVSKII GS TRETYAKOV DN FALEEV NN
Citation: Vi. Vasilev et al., PROPERTIES OF GAINASSB SOLID-SOLUTIONS OBTAINED FROM ANTIMONY FLUXES BY LIQUID-PHASE EPITAXY IN THE SPINODAL DECAY REGION, Technical physics letters, 24(3), 1998, pp. 231-232
FRACTAL STRUCTURE OF ULTRADISPERSE-DIAMOND CLUSTERS
Authors: BAIDAKOVA MV VUL AY SIKLITSKII VI FALEEV NN
Citation: Mv. Baidakova et al., FRACTAL STRUCTURE OF ULTRADISPERSE-DIAMOND CLUSTERS, Physics of the solid state, 40(4), 1998, pp. 715-718
EFFECT OF ISOVALENT INDIUM DOPING ON EXCESS ARSENIC IN GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES
Authors: CHALDYSHEV VV KUNITSYN AE TRETYAKOV VV FALEEV NN PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Vv. Chaldyshev et al., EFFECT OF ISOVALENT INDIUM DOPING ON EXCESS ARSENIC IN GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 692-695
SELF-ORGANIZING NANOHETEROSTRUCTURES IN INGAASP SOLID-SOLUTIONS
Authors: VAVILOVA LS IVANOVA AV KAPITONOV VA MURASHOVA AV TARASOV IS ARSENTEV IN BERT NA MUSIKHIN YG PIKHTIN NA FALEEV NN
Citation: Ls. Vavilova et al., SELF-ORGANIZING NANOHETEROSTRUCTURES IN INGAASP SOLID-SOLUTIONS, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 590-593
HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF INAS-GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE
Authors: FALEEV NN CHALDYSHEV VV KUNITSYN AE TRETYAKOV VV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Nn. Faleev et al., HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF INAS-GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE, Semiconductors, 32(1), 1998, pp. 19-25
ALGAASSB AND ALGAINASSB GROWTH FROM SB-RICH SOLUTIONS
Authors: MISHURNYI VA DEANDA F GORBATCHEV AY VASILEV VI SMIRNOV VM FALEEV NN
Citation: Va. Mishurnyi et al., ALGAASSB AND ALGAINASSB GROWTH FROM SB-RICH SOLUTIONS, Crystal research and technology, 33(3), 1998, pp. 457-464
SEMIDYNAMICAL SOLUTION OF THE INVERSE PROBLEM OF X-RAY BRAGG-DIFFRACTION ON MULTILAYERED CRYSTALS
Authors: PODOROV SG HOLZER G FORSTER E FALEEV NN
Citation: Sg. Podorov et al., SEMIDYNAMICAL SOLUTION OF THE INVERSE PROBLEM OF X-RAY BRAGG-DIFFRACTION ON MULTILAYERED CRYSTALS, Physica status solidi. a, Applied research, 169(1), 1998, pp. 9-16
HIGH-QUALITY ALGASB, ALGAASSB AND INGAASSB EPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY FROM SB-RICH MELTS
Authors: DERYAGIN AG FALEEV NN SMIRNOV VM SOKOLOVSKII GS VASILEV VI
Citation: Ag. Deryagin et al., HIGH-QUALITY ALGASB, ALGAASSB AND INGAASSB EPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY FROM SB-RICH MELTS, IEE proceedings. Optoelectronics, 144(6), 1997, pp. 438-440
INFLUENCE OF MISMATCH OF THE LATTICE-PARAMETERS ON THE STRUCTURAL, OPTICAL, AND TRANSPORT-PROPERTIES OF INGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON INP(100) SUBSTRATES
Authors: ZHUKOV AE EGOROV AY USTINOV VM TSATSULNIKOV AF MAKSIMOV MV FALEEV NN KOPEV PS
Citation: Ae. Zhukov et al., INFLUENCE OF MISMATCH OF THE LATTICE-PARAMETERS ON THE STRUCTURAL, OPTICAL, AND TRANSPORT-PROPERTIES OF INGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON INP(100) SUBSTRATES, Semiconductors, 31(1), 1997, pp. 15-18
2-DIMENSIONAL PRECIPITATION OF AS CLUSTERS DUE TO INDIUM DELTA-DOPINGOF GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE
Authors: BERT NA CHALDYSHEV VV FALEEV NN KUNITSYN AE LUBYSHEV DI PREOBRAZHENSKII VV SEMYAGIN BR TRETYAKOV VV
Citation: Na. Bert et al., 2-DIMENSIONAL PRECIPITATION OF AS CLUSTERS DUE TO INDIUM DELTA-DOPINGOF GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE, Semiconductor science and technology, 12(1), 1997, pp. 51-54
ORDERING EFFECTS IN RAMAN-SPECTRA OF COHERENTLY STRAINED GAAS1-XNX
Authors: MINTAIROV AM BLAGNOV PA MELEHIN VG FALEEV NN MERZ JL QIU Y NIKISHIN SA TEMKIN H
Citation: Am. Mintairov et al., ORDERING EFFECTS IN RAMAN-SPECTRA OF COHERENTLY STRAINED GAAS1-XNX, Physical review. B, Condensed matter, 56(24), 1997, pp. 15836-15841
INGAASSB GROWTH FROM SB-RICH SOLUTIONS
Authors: MISHURNYI VA DEANDA F GORBATCHEV AY VASILEV VI FALEEV NN
Citation: Va. Mishurnyi et al., INGAASSB GROWTH FROM SB-RICH SOLUTIONS, Journal of crystal growth, 180(1), 1997, pp. 34-39
GROWTH OF SINGLE-PHASE GAAS1-XNX WITH HIGH-NITROGEN CONCENTRATION BY METAL-ORGANIC MOLECULAR-BEAM EPITAXY
Authors: QIU Y NIKISHIN SA TEMKIN H FALEEV NN KUDRIAVTSEV YA
Citation: Y. Qiu et al., GROWTH OF SINGLE-PHASE GAAS1-XNX WITH HIGH-NITROGEN CONCENTRATION BY METAL-ORGANIC MOLECULAR-BEAM EPITAXY, Applied physics letters, 70(24), 1997, pp. 3242-3244
ENHANCED ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS DUE TO INDIUM DOPING
Authors: BERT NA CHALDYSHEV VV KUNITSYN AE MUSIKHIN YG FALEEV NN TRETYAKOV VV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Na. Bert et al., ENHANCED ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS DUE TO INDIUM DOPING, Applied physics letters, 70(23), 1997, pp. 3146-3148
PHOTOEMISSION OF SPINPOLARIZED ELECTRONS FROM STRAINED GAASP
Authors: DRESCHER P ANDRESEN HG AULENBACHER K BERMUTH J DOMBO T FISCHER H EUTENEUER H FALEEV NN GALAKTIONOV MS VONHARRACH D HARTMANN P HOFFMANN J JENNEWEIN P KAISER KH KOBIS S KOVALENKOV OV KREIDEL HJ LANGBEIN J MAMAEV YA NACHTIGALL C PETRI M PLUTZER S REICHERT E SCHEMIES M SCHOPE HJ STEFFENS KH STEIGERWALD M SUBASHIEV AV TRAUTNER H VINOKUROV DA YASHIN YP YAVICH BS
Citation: P. Drescher et al., PHOTOEMISSION OF SPINPOLARIZED ELECTRONS FROM STRAINED GAASP, Applied physics A: Materials science & processing, 63(2), 1996, pp. 203-206
DETERMINATION OF STRUCTURAL PARAMETERS OF GRADIENT EPITAXIAL LAYER BYHIGH-RESOLUTION X-RAY-DIFFRACTION METHODS .1. INITIAL APPROXIMATION OF THE SOLUTION OF DIFFRACTION REVERSE PROBLEM
Authors: PUNEGOV VI FALEEV NN
Citation: Vi. Punegov et Nn. Faleev, DETERMINATION OF STRUCTURAL PARAMETERS OF GRADIENT EPITAXIAL LAYER BYHIGH-RESOLUTION X-RAY-DIFFRACTION METHODS .1. INITIAL APPROXIMATION OF THE SOLUTION OF DIFFRACTION REVERSE PROBLEM, Fizika tverdogo tela, 38(1), 1996, pp. 255-263
DETERMINATION OF STRUCTURAL PARAMETERS OF GRADIENT EPITAXIAL LAYERS BY HIGH-RESOLUTION X-RAY-DIFFRACTION METHODS .2. SOLUTION OF REVERSE PROBLEM WITH KINEMATIC AND STATISTIC DYNAMIC DIFFRACTION THEORY
Authors: PUNEGOV VI PAVLOV KM PODOROV SG FALEEV NN
Citation: Vi. Punegov et al., DETERMINATION OF STRUCTURAL PARAMETERS OF GRADIENT EPITAXIAL LAYERS BY HIGH-RESOLUTION X-RAY-DIFFRACTION METHODS .2. SOLUTION OF REVERSE PROBLEM WITH KINEMATIC AND STATISTIC DYNAMIC DIFFRACTION THEORY, Fizika tverdogo tela, 38(1), 1996, pp. 264-271
X-RAY-DIFFRACTION DIAGNOSTICS OF LASER ST RUCTURES
Authors: PAVLOV KM PUNEGOV VI FALEEV NN
Citation: Km. Pavlov et al., X-RAY-DIFFRACTION DIAGNOSTICS OF LASER ST RUCTURES, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 107(6), 1995, pp. 1967-1982
EFFECT OF GROWTH TEMPERATURE ON THE ELECTRON-MOBILITY IN INALAS INGAAS TRANSISTOR STRUCTURES GROWN ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY/
Authors: USTINOV VM EGOROV AY ZHUKOV AE FALEEV NN TSAPULNIKOV AF KOPEV PS
Citation: Vm. Ustinov et al., EFFECT OF GROWTH TEMPERATURE ON THE ELECTRON-MOBILITY IN INALAS INGAAS TRANSISTOR STRUCTURES GROWN ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Semiconductors, 29(8), 1995, pp. 750-753
EPITAXIAL GAAS P-N STRUCTURES ON SI SUBSTRATES - ELECTRICAL, PHOTOELECTRIC, AND ELECTROLUMINESCENCE PROPERTIES
Authors: EVSTROPOV VV ZHILYAEV YV NAZAROV N SADOFEV YG TOPCHII AN FALEEV NN FEDOROV LM SHERNYAKOV YM
Citation: Vv. Evstropov et al., EPITAXIAL GAAS P-N STRUCTURES ON SI SUBSTRATES - ELECTRICAL, PHOTOELECTRIC, AND ELECTROLUMINESCENCE PROPERTIES, Semiconductors, 29(3), 1995, pp. 195-198
MOLECULAR-BEAM EPITAXY OF CUBIC GAN ON A (001)GAAS SUBSTRATE USING HYDRAZINE
Authors: ANTIPOV VG ZUBRILOV AS MERKULOV AV NIKISHIN SA SITNIKOVA AA STEPANOV MV TROSHKOV SI ULIN VP FALEEV NN
Citation: Vg. Antipov et al., MOLECULAR-BEAM EPITAXY OF CUBIC GAN ON A (001)GAAS SUBSTRATE USING HYDRAZINE, Semiconductors, 29(10), 1995, pp. 946-951
CHARACTERIZATION OF MOLECULAR-BEAM EPITAXY-GROWN CDF2 LAYERS BY X-RAY-DIFFRACTION AND CAF2-SM PHOTOLUMINESCENCE PROBE
Authors: SOKOLOV NS FALEEV NN GASTEV SV YAKOVLEV NL IZUMI A TSUTSUI K
Citation: Ns. Sokolov et al., CHARACTERIZATION OF MOLECULAR-BEAM EPITAXY-GROWN CDF2 LAYERS BY X-RAY-DIFFRACTION AND CAF2-SM PHOTOLUMINESCENCE PROBE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(6), 1995, pp. 2703-2708
Risultati: 1-25 | 26-33