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Results: 1-25/38
Authors:
Yun, CS
Malberti, P
Ciappa, M
Fichtner, W
Citation: Cs. Yun et al., Thermal component model for electrothermal analysis of IGBT module systems, IEEE T AD P, 24(3), 2001, pp. 401-406
Authors:
Ciampolini, L
Giannazzo, F
Ciappa, M
Fichtner, W
Raineri, V
Citation: L. Ciampolini et al., Simulation of scanning capacitance microscopy measurements on micro-sectioned and bevelled n(+)-p samples, MAT SC S PR, 4(1-3), 2001, pp. 85-88
Authors:
Graehl, S
Fichtner, W
Rentz, O
Citation: S. Graehl et al., Regionalisation and sustainability in the field of industrial production, INT J SUS D, 8(2), 2001, pp. 111-118
Authors:
Fichtner, W
Ardone, A
Rentz, O
Citation: W. Fichtner et al., Mitigation strategies using different methodologies to compare greenhouse gases, GEFAHR R L, 61(10), 2001, pp. 459-464
Authors:
Fichtner, W
Goebelt, M
Rentz, O
Citation: W. Fichtner et al., The efficiency of international cooperation in mitigating climate change: analysis of joint implementation, the clean development mechanism and emission trading for the Federal Republic of Germany, the Russian Federation andIndonesia, ENERG POLIC, 29(10), 2001, pp. 817-830
Authors:
Stadler, M
Thalmann, M
Rower, T
Kaeslin, H
Felber, N
Fichtner, W
Citation: M. Stadler et al., Design and verification of a stack processor virtual component, IEEE MICRO, 21(2), 2001, pp. 69-80
Authors:
Schenk, O
Gartner, K
Fichtner, W
Stricker, A
Citation: O. Schenk et al., PARDISO: a high-performance serial and parallel sparse linear solver in semiconductor device simulation, FUT GENER C, 18(1), 2001, pp. 69-78
Authors:
Yabuhara, H
Ciappa, M
Fichtner, W
Citation: H. Yabuhara et al., Diamond-coated cantilevers for scanning capacitance microscopy applications, MICROEL REL, 41(9-10), 2001, pp. 1459-1463
Authors:
Schenkel, M
Pfaffli, P
Wilkening, W
Aemmer, D
Fichtner, W
Citation: M. Schenkel et al., Substrate potential shift due to parasitic minority carrier injection in smart-power ICs: measurements and full-chip 3D device simulation, MICROEL REL, 41(6), 2001, pp. 815-822
Authors:
Esmark, K
Stadler, W
Wendel, M
Gossner, H
Guggenmos, X
Fichtner, W
Citation: K. Esmark et al., Advanced 2D/3D ESD device simulation - a powerful tool already used in a pre-Si phase, MICROEL REL, 41(11), 2001, pp. 1761-1770
Authors:
Bufler, FM
Schenk, A
Fichtner, W
Citation: Fm. Bufler et al., Simplified model for inelastic acoustic phonon scattering of holes in Si and Ge, J APPL PHYS, 90(5), 2001, pp. 2626-2628
Authors:
Wettstein, A
Schenk, A
Fichtner, W
Citation: A. Wettstein et al., Quantum device-simulation with the density-gradient model on unstructured grids, IEEE DEVICE, 48(2), 2001, pp. 279-284
Authors:
Schuster, C
Leonhardt, G
Fichtner, W
Citation: C. Schuster et al., Electromagnetic simulation of bonding wires and comparison with wide band measurements, IEEE T AD P, 23(1), 2000, pp. 69-79
Authors:
Wettstein, A
Schenk, A
Fichtner, W
Citation: A. Wettstein et al., Simulation of direct tunneling through stacked gate dielectrics by a fullyintegrated 1D-Schrodinger-Poisson solver, IEICE TR EL, E83C(8), 2000, pp. 1189-1193
Authors:
Scholze, A
Schenk, A
Fichtner, W
Citation: A. Scholze et al., Effect of the tunneling rates on the conductance characteristics of single-electron transistors, IEICE TR EL, E83C(8), 2000, pp. 1242-1246
Authors:
Krause, J
Schmithusen, B
Villablanca, L
Fichtner, W
Citation: J. Krause et al., New developments and old problems in grid generation and adaptation for TCAD applications, IEICE TR EL, E83C(8), 2000, pp. 1331-1337
Authors:
Schuster, C
Christ, A
Fichtner, W
Citation: C. Schuster et al., Review of FDTD time-stepping schemes for efficient simulation of electric conductive media, MICROW OPT, 25(1), 2000, pp. 16-21
Authors:
Krause, J
Strecker, N
Fichtner, W
Citation: J. Krause et al., Boundary-sensitive mesh generation using an offsetting technique, INT J NUM M, 49(1-2), 2000, pp. 51-59
Authors:
Litzenberger, M
Esmark, K
Pogany, D
Furbock, C
Gossner, H
Gornik, E
Fichtner, W
Citation: M. Litzenberger et al., Study of triggering inhomogeneities in gg-nMOS ESD protection devices via thermal mapping using backside laser interferometry., MICROEL REL, 40(8-10), 2000, pp. 1359-1364
Authors:
Malberti, P
Ciampolini, L
Ciappa, M
Fichtner, W
Citation: P. Malberti et al., Quantification of scanning capacitance microscopy measurements for 2D dopant profiling, MICROEL REL, 40(8-10), 2000, pp. 1395-1399
Authors:
Mergens, M
Wilkening, W
Mettler, S
Wolf, H
Fichtner, W
Citation: M. Mergens et al., Modular approach of a high current MOS compact model for circuit-level ESDsimulation including transient gate-coupling behaviour, MICROEL REL, 40(1), 2000, pp. 99-115
Authors:
Mergens, MPJ
Wilkening, W
Mettler, S
Wolf, H
Stricker, A
Fichtner, W
Citation: Mpj. Mergens et al., Analysis of lateral DMOS power devices under ESD stress conditions, IEEE DEVICE, 47(11), 2000, pp. 2128-2137
Authors:
Scholze, A
Schenk, A
Fichtner, W
Citation: A. Scholze et al., Single-electron device simulation, IEEE DEVICE, 47(10), 2000, pp. 1811-1818
Authors:
Bufler, FM
Schenk, A
Fichtner, W
Citation: Fm. Bufler et al., Efficient Monte Carlo device modeling, IEEE DEVICE, 47(10), 2000, pp. 1891-1897
Authors:
Witzigmann, B
Witzig, A
Fichtner, W
Citation: B. Witzigmann et al., A multidimensional laser simulator for edge-emitters including quantum carrier capture, IEEE DEVICE, 47(10), 2000, pp. 1926-1934