ACNP - Italian Periodicals Catalogue

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Results: 1-25 | 26-50 | 51-75 | 76-94

Results: 1-25/94

Proposta di classificazione delle facies "torbiditiche" e di un metodo pratico per la loro descrizione sul terreno

Authors: GHIBAUDO G VANZ V

Citation: G. Ghibaudo et V. Vanz, Proposta di classificazione delle facies "torbiditiche" e di un metodo pratico per la loro descrizione sul terreno, Giornale di geologia , 49(02), 1987, pp. 31-44

Facies ed interpretazione paleoambientale delle Arenarie di Ranzano nei dintorni di Specchio (Val Pessola, Appennino Parmense)

Authors: GHIBAUDO G MUTTI E

Citation: G. Ghibaudo et E. Mutti, Facies ed interpretazione paleoambientale delle Arenarie di Ranzano nei dintorni di Specchio (Val Pessola, Appennino Parmense), Memorie della Societa Geologica Italiana , 12(02), 1973, pp. 251-265

Litostratigrafia, sedimentologia ed evoluzione tettonico sedimentaria dei depositi miocenici del margine sud-orientale del Bacino Terziario Ligure-Piemontese (Valli Borbera, Scrivia e Lemme)

Authors: GHIBAUDO G CLARI P PERSELLO M

Citation: G. Ghibaudo et al., Litostratigrafia, sedimentologia ed evoluzione tettonico sedimentaria dei depositi miocenici del margine sud-orientale del Bacino Terziario Ligure-Piemontese (Valli Borbera, Scrivia e Lemme), Bollettino della Societa Geologica Italiana Italian Journal of Geosciences, 104(03), 1985, pp. 349-397

Le spiagge fossili delle arenarie di Aren (Cretacico superiore) nella Valle Noguera Ribagorzana (Pirenei centro-meridionali, Province di Lerida e Huesca, Spagna)

Authors: GHIBAUDO G MUTTI E ROSELL J

Citation: G. Ghibaudo et al., Le spiagge fossili delle arenarie di Aren (Cretacico superiore) nella Valle Noguera Ribagorzana (Pirenei centro-meridionali, Province di Lerida e Huesca, Spagna), Memorie della Societa Geologica Italiana , 13, 1974, pp. 497-537

Osservazioni sedimentologiche preliminari sulle arenarie di Aren (Cretacico superiore) tra Isona e il Rio Noguera Ribagorzana (Prepirenei Spagnoli)

Authors: GHIBAUDO G MORELLI E MUTTI E OBRADOR A PONS J RAMASCO M ROSELL J

Citation: G. Ghibaudo et al., Osservazioni sedimentologiche preliminari sulle arenarie di Aren (Cretacico superiore) tra Isona e il Rio Noguera Ribagorzana (Prepirenei Spagnoli), Bollettino della Societa Geologica Italiana Italian Journal of Geosciences, 92(03), 1973, pp. 529-540

Depositi di barra di foce nel Paleogene della valle di Ager (Provincia di Lerida, Spagna)

Authors: GHIBAUDO G

Citation: G. Ghibaudo, Depositi di barra di foce nel Paleogene della valle di Ager (Provincia di Lerida, Spagna), Bollettino della Societa Geologica Italiana Italian Journal of Geosciences, 94(06), 1975, pp. 2131-2154

CHARACTERIZATION OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS BY LOW-FREQUENCY NOISE MEASUREMENTS

Authors: DIMITRIADIS CA BRINI J KAMARINOS G GHIBAUDO G

Citation: Ca. Dimitriadis et al., CHARACTERIZATION OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS BY LOW-FREQUENCY NOISE MEASUREMENTS, JPN J A P 1, 37(1), 1998, pp. 72-77

REVERSE SHORT-CHANNEL EFFECT IN SILICON MOSFET OPERATED AT LOW-TEMPERATURE

Authors: SZELAG B BALESTRA F GHIBAUDO G

Citation: B. Szelag et al., REVERSE SHORT-CHANNEL EFFECT IN SILICON MOSFET OPERATED AT LOW-TEMPERATURE, Journal de physique. IV, 8(P3), 1998, pp. 9-12

A THOROUGH ANALYSIS OF SELF-HEATING EFFECTS FOR SOI MOSFETS ON SIMOX AND UNIBOND SUBSTRATES

Authors: JOMAAH J RAULY E GHIBAUDO G BALESTRA F

Citation: J. Jomaah et al., A THOROUGH ANALYSIS OF SELF-HEATING EFFECTS FOR SOI MOSFETS ON SIMOX AND UNIBOND SUBSTRATES, Journal de physique. IV, 8(P3), 1998, pp. 17-20

COMPREHENSIVE ANALYSIS OF REVERSE SHORT-CHANNEL EFFECT IN SILICON MOSFETS FROM LOW-TEMPERATURE OPERATION

Authors: SZELAG B BALESTRA F GHIBAUDO G

Citation: B. Szelag et al., COMPREHENSIVE ANALYSIS OF REVERSE SHORT-CHANNEL EFFECT IN SILICON MOSFETS FROM LOW-TEMPERATURE OPERATION, IEEE electron device letters, 19(12), 1998, pp. 511-513

PROCEEDINGS OF THE 2ND SESSION - ELECTRICAL AND PHYSICAL CHARACTERIZATION OF MATERIALS AND DEVICES FOR SILICON MICROELECTRONICS - JUNE 29 JULY 5, 1998, AUTRANS, FRANCE - PREFACE

Authors: BOUSSEY J GHIBAUDO G

Citation: J. Boussey et G. Ghibaudo, PROCEEDINGS OF THE 2ND SESSION - ELECTRICAL AND PHYSICAL CHARACTERIZATION OF MATERIALS AND DEVICES FOR SILICON MICROELECTRONICS - JUNE 29 JULY 5, 1998, AUTRANS, FRANCE - PREFACE, Microelectronic engineering, 40(3-4), 1998, pp. 111-112

OSCILLATORY BEHAVIOR OF THE TUNNELING CURRENT IN ULTRA-THIN GATE DIELECTRICS - INFLUENCE OF VARIOUS PHYSICAL AND TECHNOLOGICAL PARAMETERS (VOL 41, PG 987, 1997)

Authors: BRIERE O BARLA K HALIMAOUI A GHIBAUDO G

Citation: O. Briere et al., OSCILLATORY BEHAVIOR OF THE TUNNELING CURRENT IN ULTRA-THIN GATE DIELECTRICS - INFLUENCE OF VARIOUS PHYSICAL AND TECHNOLOGICAL PARAMETERS (VOL 41, PG 987, 1997), Solid-state electronics, 42(5), 1998, pp. 881-881

SIO2-INDUCED AND ONO-INDUCED SUBSTRATE CURRENT IN SILICON FIELD-EFFECT TRANSISTORS

Authors: DESALVO B GHIBAUDO G PANANAKAKIS G MONDON F

Citation: B. Desalvo et al., SIO2-INDUCED AND ONO-INDUCED SUBSTRATE CURRENT IN SILICON FIELD-EFFECT TRANSISTORS, Solid-state electronics, 42(10), 1998, pp. 1839-1847

LOW-FREQUENCY NOISE CHARACTERIZATION OF 0.18 MU-M SI CMOS TRANSISTORS

Authors: BOUTCHACHA T GHIBAUDO G

Citation: T. Boutchacha et G. Ghibaudo, LOW-FREQUENCY NOISE CHARACTERIZATION OF 0.18 MU-M SI CMOS TRANSISTORS, Physica status solidi. a, Applied research, 167(1), 1998, pp. 261-270

REVERSIBILITY OF CHARGE TRAPPING AND SILC CREATION IN THIN OXIDES AFTER STRESS ANNEAL CYCLING/

Authors: RIESS P KIES R GHIBAUDO G PANANAKAKIS G BRINI J

Citation: P. Riess et al., REVERSIBILITY OF CHARGE TRAPPING AND SILC CREATION IN THIN OXIDES AFTER STRESS ANNEAL CYCLING/, Microelectronics and reliability, 38(6-8), 1998, pp. 1057-1061

CHARACTERIZATION OF SILC IN THIN OXIDES BY USING MOSFET SUBSTRATE CURRENT

Authors: DESALVO B GHIBAUDO G PANANAKAKIS G MONDON F

Citation: B. Desalvo et al., CHARACTERIZATION OF SILC IN THIN OXIDES BY USING MOSFET SUBSTRATE CURRENT, Microelectronics and reliability, 38(6-8), 1998, pp. 1075-1080

A NEW HOT-CARRIER DEGRADATION LAW FOR MOSFET LIFETIME PREDICTION

Authors: MARCHAND B GHIBAUDO G BALESTRA F GUEGAN G DELEONIBUS S

Citation: B. Marchand et al., A NEW HOT-CARRIER DEGRADATION LAW FOR MOSFET LIFETIME PREDICTION, Microelectronics and reliability, 38(6-8), 1998, pp. 1103-1107

STRESS-INDUCED DEGRADATION FEATURES OF VERY THIN GATE OXIDES

Authors: SCARPA A GHIBAUDO G GHIDINI G PANANAKAKIS G PACCAGNELLA A

Citation: A. Scarpa et al., STRESS-INDUCED DEGRADATION FEATURES OF VERY THIN GATE OXIDES, Microelectronics and reliability, 38(2), 1998, pp. 195-199

GENERALIZED TRAPPING KINETIC-MODEL FOR THE OXIDE DEGRADATION AFTER FOWLER-NORDHEIM UNIFORM GATE STRESS (VOL 82, PG 2548, 1997)

Authors: PANANAKAKIS G GHIBAUDO G PAPADAS C VINCENT E KIES R

Citation: G. Pananakakis et al., GENERALIZED TRAPPING KINETIC-MODEL FOR THE OXIDE DEGRADATION AFTER FOWLER-NORDHEIM UNIFORM GATE STRESS (VOL 82, PG 2548, 1997), Journal of applied physics, 83(5), 1998, pp. 2869-2869

MODIFICATIONS OF FOWLER-NORDHEIM INJECTION CHARACTERISTICS IN GAMMA-IRRADIATED MOS DEVICES

Authors: SCARPA A PACCAGNELLA A MONTERA F CANDELORI A GHIBAUDO G PANANAKAKIS G GHIDINI G FUOCHI PG

Citation: A. Scarpa et al., MODIFICATIONS OF FOWLER-NORDHEIM INJECTION CHARACTERISTICS IN GAMMA-IRRADIATED MOS DEVICES, IEEE transactions on nuclear science, 45(3), 1998, pp. 1390-1395

INFLUENCE OF QUADRATIC MOBILITY DEGRADATION FACTOR ON LOW-FREQUENCY NOISE IN MOS-TRANSISTORS

Authors: MASSON P GHIBAUDO G AUTRAN JL MORFOULI P BRINI J

Citation: P. Masson et al., INFLUENCE OF QUADRATIC MOBILITY DEGRADATION FACTOR ON LOW-FREQUENCY NOISE IN MOS-TRANSISTORS, Electronics Letters, 34(20), 1998, pp. 1977-1979

ANNEALING KINETICS AND REVERSIBILITY OF STRESS-INDUCED LEAKAGE CURRENT IN THIN OXIDES

Authors: RIESS P GHIBAUDO G PANANAKAKIS G BRINI J

Citation: P. Riess et al., ANNEALING KINETICS AND REVERSIBILITY OF STRESS-INDUCED LEAKAGE CURRENT IN THIN OXIDES, Applied physics letters, 72(23), 1998, pp. 3041-3043

CRITICAL MOSFETS OPERATION FOR LOW-VOLTAGE LOW-POWER ICS - IDEAL CHARACTERISTICS, PARAMETER EXTRACTION, ELECTRICAL NOISE AND RTS FLUCTUATIONS

Authors: GHIBAUDO G

Citation: G. Ghibaudo, CRITICAL MOSFETS OPERATION FOR LOW-VOLTAGE LOW-POWER ICS - IDEAL CHARACTERISTICS, PARAMETER EXTRACTION, ELECTRICAL NOISE AND RTS FLUCTUATIONS, Microelectronic engineering, 39(1-4), 1997, pp. 31-57

STRESS-INDUCED LEAKAGE CURRENT IN ULTRA-THIN GATE OXIDES AFTER CONSTANT-CURRENT STRESS

Authors: SCARPA A GHIBAUDO G GHIDINI G PANANAKAKIS G PACCAGNELLA A

Citation: A. Scarpa et al., STRESS-INDUCED LEAKAGE CURRENT IN ULTRA-THIN GATE OXIDES AFTER CONSTANT-CURRENT STRESS, Microelectronic engineering, 36(1-4), 1997, pp. 145-148

ELECTRICAL-PROPERTIES OF ULTRATHIN RTCVD OXINITRIDE FILMS IN N-CHANNEL AND P-CHANNEL MOSFETS

Authors: MANEGLIA Y BAUZA D MORFOULI Y GHIBAUDO G

Citation: Y. Maneglia et al., ELECTRICAL-PROPERTIES OF ULTRATHIN RTCVD OXINITRIDE FILMS IN N-CHANNEL AND P-CHANNEL MOSFETS, Microelectronic engineering, 36(1-4), 1997, pp. 153-155

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