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Results: 1-25/38
Authors:
YUAN J
HANEMAN D
ANDRIENKO I
SIEGELE R
EVANS P
Citation: J. Yuan et al., ELECTROLUMINESCENCE AND NATURE OF LIGHTLY SPARK-PROCESSED SILICON, Semiconductor science and technology, 13(6), 1998, pp. 615-621
Authors:
YUAN J
HANEMAN D
LI W
ZHANG T
Citation: J. Yuan et al., ELECTROLUMINESCENCE FROM LASER-GROOVED SILICON, Semiconductor science and technology, 13(1), 1998, pp. 130-133
Authors:
KAALUND CJ
HANEMAN D
Citation: Cj. Kaalund et D. Haneman, POSITIVE-ION AND ELECTRON-EMISSION FROM CLEAVED SI AND GE, Physical review letters, 80(16), 1998, pp. 3642-3645
Authors:
YUAN J
HANEMAN D
ANDRIENKO I
LI W
Citation: J. Yuan et al., ELECTROLUMINESCENCE FROM MECHANICALLY DAMAGED OXIDIZED SILICON, Journal of applied physics, 83(8), 1998, pp. 4385-4388
Authors:
BUSCH E
HANEMAN D
Citation: E. Busch et D. Haneman, FRACTURE PHENOMENA IN SILICON IMAGED BY INFRARED RADIATION FROM EJECTED SMALL PARTICLES, Applied physics letters, 73(4), 1998, pp. 484-486
Authors:
KUZNETSOV VA
ANDRIENKO I
HANEMAN D
Citation: Va. Kuznetsov et al., HIGH-EFFICIENCY BLUE-GREEN ELECTROLUMINESCENCE AND SCANNING-TUNNELING-MICROSCOPY STUDIES OF POROUS SILICON, Applied physics letters, 72(25), 1998, pp. 3323-3325
Authors:
KUZNETSOV VA
HANEMAN D
Citation: Va. Kuznetsov et D. Haneman, ELECTROLUMINESCENCE FROM AMORPHOUS-SILICON-BASED SWITCHING DEVICES, Journal of materials research, 12(1), 1997, pp. 17-20
Authors:
HANEMAN D
YUAN J
Citation: D. Haneman et J. Yuan, ELECTROLUMINESCENCE FROM NEW SILICON SYSTEMS, Applied surface science, 114, 1997, pp. 103-110
Authors:
ZHAO D
HANEMAN D
Citation: D. Zhao et D. Haneman, THERMOELECTRIC VOLTAGES FROM SI CLEAVAGES, Surface science, 391(1-3), 1997, pp. 1230-1234
Authors:
HANEMAN D
Citation: D. Haneman, NITROGEN ADSORPTION AND NATIVE CONTAMINATION ON FE(211) SURFACES, Surface science, 375(1), 1997, pp. 71-80
Authors:
KUZNETSOV VA
HANEMAN D
Citation: Va. Kuznetsov et D. Haneman, HIGH-TEMPERATURE COEFFICIENT OF RESISTANCE IN VANADIUM-OXIDE DIODES, Review of scientific instruments, 68(3), 1997, pp. 1518-1520
Authors:
CRISP RS
HANEMAN D
SABETDARIANI R
Citation: Rs. Crisp et al., POROUS SILICON STUDIED BY SIL(23) SOFT-X-RAY EMISSION, Applied surface science, 92, 1996, pp. 198-203
Authors:
CHEN B
HANEMAN D
Citation: B. Chen et D. Haneman, THEORY OF DIPOLE GENERATION AT CLEAVED SEMICONDUCTOR SURFACES, Applied surface science, 92, 1996, pp. 345-349
Authors:
HANEMAN D
MCALPINE NS
BUSCH E
KAALUND C
Citation: D. Haneman et al., SEMICONDUCTOR BOND RUPTURE PHENOMENA AND SURFACE-PROPERTIES, Applied surface science, 92, 1996, pp. 484-490
Authors:
ZHAO D
HANEMAN D
MCALPINE NS
Citation: D. Zhao et al., DETECTION OF TEMPERATURE RISE DURING CLEAVAGE OF SILICON, Surface science, 369(1-3), 1996, pp. 76-84
Authors:
MCALPINE NS
MCCONVILLE P
HANEMAN D
CHERNYAK L
CAHEN D
Citation: Ns. Mcalpine et al., JUNCTION SHARPNESS IN FIELD-INDUCED TRANSISTOR STRUCTURES IN CUXAG1-XINSE2, Journal of applied physics, 79(9), 1996, pp. 7370-7372
Authors:
KUZNETSOV VA
HANEMAN D
Citation: Va. Kuznetsov et D. Haneman, HIGH-SENSITIVITY TO TEMPERATURE AND QUANTUM EFFECTS IN VANADIUM-OXIDEDIODES, Journal of applied physics, 79(10), 1996, pp. 8109-8111
Authors:
BUSCH E
HANEMAN D
MCALPINE NS
Citation: E. Busch et al., EFFECT OF ELECTRIC-CURRENT ON DURATION OF CLEAVAGE LUMINESCENCE, Applied physics letters, 68(3), 1996, pp. 385-387
Authors:
WU S
HANEMAN D
Citation: S. Wu et D. Haneman, CADMIUM SELENIDE - AMORPHOUS HYDROGENATED SILICON HETEROSTRUCTURES, Applied surface science, 89(3), 1995, pp. 289-295
Authors:
CHEN B
HANEMAN D
Citation: B. Chen et D. Haneman, SURFACE BAND-STRUCTURE OF SI(111)2X1, Physical review. B, Condensed matter, 51(7), 1995, pp. 4258-4263
Authors:
KAALUND CJ
HANEMAN D
MCALPINE NS
Citation: Cj. Kaalund et al., LOW-TEMPERATURE CLEAVAGE LUMINESCENCE OF SILICON, Surface science, 337(1-2), 1995, pp. 795-799
Authors:
MCALPINE NS
HANEMAN D
Citation: Ns. Mcalpine et D. Haneman, OBSERVATION AND ANALYSIS OF CONDUCTANCE OSCILLATIONS IN SCANNING-TUNNELING-MICROSCOPY OF CLEAN INP(110) SURFACES, Journal of applied physics, 78(9), 1995, pp. 5820-5821
Authors:
YUAN J
HANEMAN D
Citation: J. Yuan et D. Haneman, ELECTROLUMINESCENCE FROM SPARK-PROCESSED SILICON, Applied physics letters, 67(22), 1995, pp. 3328-3330
Authors:
TIAN SX
HANEMAN D
NOZAKI S
TAKAHASHI K
Citation: Sx. Tian et al., ELECTROLUMINESCENCE FROM CARBON-DOPED GAAS JUNCTIONS WITH SEMIINSULATING GAAS, Applied physics letters, 66(10), 1995, pp. 1246-1248
Authors:
JAFAR M
HANEMAN D
Citation: M. Jafar et D. Haneman, MAGNETIC QUANTUM EFFECTS IN AMORPHOUS-HYDROGENATED-SILICON DOUBLE SCHOTTKY DIODES, Physical review. B, Condensed matter, 50(8), 1994, pp. 5707-5709