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Results: 1-25 | 26-26
Results: 1-25/26
IMPACT OF ORGANIC CONTAMINATION ON THIN GATE OXIDE QUALITY
Authors: DEGENDT S KNOTTER DM KENIS K DEPAS M MEURIS M MERTENS PW HEYNS MM
Citation: S. Degendt et al., IMPACT OF ORGANIC CONTAMINATION ON THIN GATE OXIDE QUALITY, JPN J A P 1, 37(9A), 1998, pp. 4649-4655
MODEL FOR THE CURRENT-VOLTAGE CHARACTERISTICS OF ULTRATHIN GATE OXIDES AFTER SOFT BREAKDOWN
Authors: HOUSSA M NIGAM T MERTENS PW HEYNS MM
Citation: M. Houssa et al., MODEL FOR THE CURRENT-VOLTAGE CHARACTERISTICS OF ULTRATHIN GATE OXIDES AFTER SOFT BREAKDOWN, Journal of applied physics, 84(8), 1998, pp. 4351-4355
IMPACT OF IRON CONTAMINATION AND ROUGHNESS GENERATED IN AMMONIA HYDROGEN-PEROXIDE MIXTURES (SC1) ON 5 NM GATE OXIDES
Authors: DEGENDT S KNOTTER DM KENIS K MERTENS PW HEYNS MM
Citation: S. Degendt et al., IMPACT OF IRON CONTAMINATION AND ROUGHNESS GENERATED IN AMMONIA HYDROGEN-PEROXIDE MIXTURES (SC1) ON 5 NM GATE OXIDES, Journal of the Electrochemical Society, 145(7), 1998, pp. 2589-2594
SOFT BREAKDOWN IN ULTRATHIN GATE OXIDES - CORRELATION WITH THE PERCOLATION THEORY OF NONLINEAR CONDUCTORS
Authors: HOUSSA M NIGAM T MERTENS PW HEYNS MM
Citation: M. Houssa et al., SOFT BREAKDOWN IN ULTRATHIN GATE OXIDES - CORRELATION WITH THE PERCOLATION THEORY OF NONLINEAR CONDUCTORS, Applied physics letters, 73(4), 1998, pp. 514-516
RELATION BETWEEN TRAP CREATION AND BREAKDOWN DURING TUNNELING CURRENTSTRESSING OF SUB 3 NM GATE OXIDE
Authors: DEPAS M HEYNS MM
Citation: M. Depas et Mm. Heyns, RELATION BETWEEN TRAP CREATION AND BREAKDOWN DURING TUNNELING CURRENTSTRESSING OF SUB 3 NM GATE OXIDE, Microelectronic engineering, 36(1-4), 1997, pp. 21-24
DEFINITION OF DIELECTRIC-BREAKDOWN FOR ULTRA-THIN (LESS-THAN-2 NM) GATE OXIDES
Authors: DEPAS M NIGAM T HEYNS MM
Citation: M. Depas et al., DEFINITION OF DIELECTRIC-BREAKDOWN FOR ULTRA-THIN (LESS-THAN-2 NM) GATE OXIDES, Solid-state electronics, 41(5), 1997, pp. 725-728
POINT OF USE HF PURIFICATION FOR SILICON SURFACE PREPARATION BY ION-EXCHANGE
Authors: FYEN W MOUCHE L MEURIS M HEYNS MM
Citation: W. Fyen et al., POINT OF USE HF PURIFICATION FOR SILICON SURFACE PREPARATION BY ION-EXCHANGE, Journal of the Electrochemical Society, 144(6), 1997, pp. 2189-2196
LIGHT POINT-DEFECT GENERATION DURING PHOTORESIST SPIN-COATING - CHARACTERIZATION AND CONTROLLING PARAMETERS
Authors: MOUCHE L MEURIS M HEYNS MM
Citation: L. Mouche et al., LIGHT POINT-DEFECT GENERATION DURING PHOTORESIST SPIN-COATING - CHARACTERIZATION AND CONTROLLING PARAMETERS, Journal of the Electrochemical Society, 144(10), 1997, pp. 3608-3613
BREAKDOWN AND DEFECT GENERATION IN ULTRATHIN GATE OXIDE
Authors: DEPAS M VERMEIRE B HEYNS MM
Citation: M. Depas et al., BREAKDOWN AND DEFECT GENERATION IN ULTRATHIN GATE OXIDE, Journal of applied physics, 80(1), 1996, pp. 382-387
SOFT BREAKDOWN OF ULTRA-THIN GATE OXIDE LAYERS
Authors: DEPAS M NIGAM T HEYNS MM
Citation: M. Depas et al., SOFT BREAKDOWN OF ULTRA-THIN GATE OXIDE LAYERS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1499-1504
IMPACT OF FE AND CU CONTAMINATION ON THE MINORITY-CARRIER LIFETIME OFSILICON SUBSTRATES
Authors: ROTONDARO ALP HURD TQ KANIAVA A VANHELLEMONT J SIMOEN E HEYNS MM CLAEYS C
Citation: Alp. Rotondaro et al., IMPACT OF FE AND CU CONTAMINATION ON THE MINORITY-CARRIER LIFETIME OFSILICON SUBSTRATES, Journal of the Electrochemical Society, 143(9), 1996, pp. 3014-3019
PROTRUSION FORMATION AT THE EDGES OF ION-IMPLANTED REGIONS
Authors: ROTONDARO ALP BENDER H HEYNS MM CLAEYS C
Citation: Alp. Rotondaro et al., PROTRUSION FORMATION AT THE EDGES OF ION-IMPLANTED REGIONS, Journal of the Electrochemical Society, 143(6), 1996, pp. 118-120
IMPACT OF THE ELECTROCHEMICAL PROPERTIES OF SILICON-WAFER SURFACES ONCOPPER OUTPLATING FROM HF SOLUTIONS
Authors: TEERLINCK I MERTENS PW SCHMIDT HF MEURIS M HEYNS MM
Citation: I. Teerlinck et al., IMPACT OF THE ELECTROCHEMICAL PROPERTIES OF SILICON-WAFER SURFACES ONCOPPER OUTPLATING FROM HF SOLUTIONS, Journal of the Electrochemical Society, 143(10), 1996, pp. 3323-3327
IMPROVEMENT OF HIGH-TEMPERATURE WATER RINSING AND DRYING FOR HF-LAST WAFER CLEANING
Authors: LI L BENDER H ZOU G MERTENS PW MEURIS MA HEYNS MM
Citation: L. Li et al., IMPROVEMENT OF HIGH-TEMPERATURE WATER RINSING AND DRYING FOR HF-LAST WAFER CLEANING, Journal of the Electrochemical Society, 143(1), 1996, pp. 233-237
H2O2 DECOMPOSITION AND ITS IMPACT ON SILICON SURFACE ROUGHENING AND GATE OXIDE INTEGRITY
Authors: SCHMIDT HF MEURIS M MERTENS PW ROTONDARO ALP HEYNS MM HURD TQ HATCHER Z
Citation: Hf. Schmidt et al., H2O2 DECOMPOSITION AND ITS IMPACT ON SILICON SURFACE ROUGHENING AND GATE OXIDE INTEGRITY, JPN J A P 1, 34(2B), 1995, pp. 727-731
WEAR-OUT OF ULTRA-THIN GATE OXIDES DURING HIGH-FIELD ELECTRON-TUNNELING
Authors: DEPAS M VERMEIRE B MARTENS PW MEURIS M HEYNS MM
Citation: M. Depas et al., WEAR-OUT OF ULTRA-THIN GATE OXIDES DURING HIGH-FIELD ELECTRON-TUNNELING, Semiconductor science and technology, 10(6), 1995, pp. 753-758
GROWTH-KINETICS AND ELECTRICAL CHARACTERISTICS OF ULTRA-THIN PYROGENIC SILICON-OXIDE
Authors: DEPAS M VERMEIRE B MERTENS PW HEYNS MM
Citation: M. Depas et al., GROWTH-KINETICS AND ELECTRICAL CHARACTERISTICS OF ULTRA-THIN PYROGENIC SILICON-OXIDE, Microelectronic engineering, 28(1-4), 1995, pp. 125-128
THE IMEC CLEAN - A NEW CONCEPT FOR PARTICLE AND METAL REMOVAL ON SI SURFACES
Authors: MEURIS M MERTENS PW OPDEBEECK A SCHMIDT HF DEPAS M VEREECKE G HEYNS MM PHILIPOSSIAN A
Citation: M. Meuris et al., THE IMEC CLEAN - A NEW CONCEPT FOR PARTICLE AND METAL REMOVAL ON SI SURFACES, Solid state technology, 38(7), 1995, pp. 109
DETERMINATION OF TUNNELING PARAMETERS IN ULTRA-THIN OXIDE LAYER POLY-SI SIO2/SI STRUCTURES/
Authors: DEPAS M VERMEIRE B MERTENS PW VANMEIRHAEGHE RL HEYNS MM
Citation: M. Depas et al., DETERMINATION OF TUNNELING PARAMETERS IN ULTRA-THIN OXIDE LAYER POLY-SI SIO2/SI STRUCTURES/, Solid-state electronics, 38(8), 1995, pp. 1465-1471
SURFACE PASSIVATION AND MICROROUGHNESS OF (100)SILICON ETCHED IN AQUEOUS HYDROGEN HALIDE (HF, HCL, HBR, HI) SOLUTIONS
Authors: LI L BENDER H TRENKLER T MERTENS PW MEURIS M VANDERVORST W HEYNS MM
Citation: L. Li et al., SURFACE PASSIVATION AND MICROROUGHNESS OF (100)SILICON ETCHED IN AQUEOUS HYDROGEN HALIDE (HF, HCL, HBR, HI) SOLUTIONS, Journal of applied physics, 77(3), 1995, pp. 1323-1325
SENSITIVE LIGHT-SCATTERING AS A SEMIQUANTITATIVE METHOD FOR STUDYING PHOTORESIST STRIPPING
Authors: ROTONDARO ALP MEURIS M SCHMIDT HF HEYNS MM CLAEYS C HELLEMANS L SNAUWAERT J
Citation: Alp. Rotondaro et al., SENSITIVE LIGHT-SCATTERING AS A SEMIQUANTITATIVE METHOD FOR STUDYING PHOTORESIST STRIPPING, Journal of the Electrochemical Society, 142(1), 1995, pp. 211-216
SURFACE RECONSTRUCTION OF HYDROGEN ANNEALED (100) SILICON
Authors: BENDER H VERHAVERBEKE S CAYMAX M VATEL O HEYNS MM
Citation: H. Bender et al., SURFACE RECONSTRUCTION OF HYDROGEN ANNEALED (100) SILICON, Journal of applied physics, 75(2), 1994, pp. 1207-1209
HYDROGEN PASSIVATION OF HF-LAST CLEANED (100)SILICON SURFACES INVESTIGATED BY MULTIPLE INTERNAL-REFLECTION INFRARED-SPECTROSCOPY
Authors: BENDER H VERHAVERBEKE S HEYNS MM
Citation: H. Bender et al., HYDROGEN PASSIVATION OF HF-LAST CLEANED (100)SILICON SURFACES INVESTIGATED BY MULTIPLE INTERNAL-REFLECTION INFRARED-SPECTROSCOPY, Journal of the Electrochemical Society, 141(11), 1994, pp. 3128-3136
THE ETCHING MECHANISMS OF SIO2 IN HYDROFLUORIC-ACID
Authors: VERHAVERBEKE S TEERLINCK I VINCKIER C STEVENS G CARTUYVELS R HEYNS MM
Citation: S. Verhaverbeke et al., THE ETCHING MECHANISMS OF SIO2 IN HYDROFLUORIC-ACID, Journal of the Electrochemical Society, 141(10), 1994, pp. 2852-2857
CONTAMINATION CONTROL OF POLYSILICON GATES IN A VERTICAL REACTOR CLUSTER TOOL
Authors: WERKHOVEN C GRANNEMAN E LINDOW E DEBLANK R VERHAVERBEKE S HEYNS MM
Citation: C. Werkhoven et al., CONTAMINATION CONTROL OF POLYSILICON GATES IN A VERTICAL REACTOR CLUSTER TOOL, Journal of the IES, 36(3), 1993, pp. 33-36
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