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Results:
1-22
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Results: 22
Authors:
ENGELS G
TIETZE M
APPENZELLER J
HOLLFELDER M
SCHAPERS T
LUTH H
Citation: G. Engels et al., QUANTUM POINT CONTACTS ON INGAAS INP HETEROSTRUCTURES/, Superlattices and microstructures, 23(6), 1998, pp. 1249-1253
Authors:
HARTMANN A
DIEKER C
HOLLFELDER M
HARDTDEGEN H
FORSTER A
LUTH H
Citation: A. Hartmann et al., SPONTANEOUS FORMATION OF A TILTED ALGAAS GAAS SUPERLATTICE DURING ALGAAS GROWTH/, Applied surface science, 123, 1998, pp. 704-709
Authors:
UHLISCH D
APPENZELLER J
TIETZE MF
SCHAPERS T
HOLLFELDER M
LUTH H
Citation: D. Uhlisch et al., INVESTIGATION OF CHARACTERISTIC SCATTERING LENGTHS IN STRAINED IN0.53GA0.47AS IN0.76GA0.24AS/INP BY MEANS OF HOT BALLISTIC ELECTRONS/, Physical review. B, Condensed matter, 57(3), 1998, pp. 1834-1837
Authors:
DARMO J
DUBECKY F
HARDTDEGEN H
HOLLFELDER M
SCHMIDT R
Citation: J. Darmo et al., DEEP-LEVEL STATES IN MOVPE ALGAAS - THE INFLUENCE OF CARRIER GAS, Journal of crystal growth, 186(1-2), 1998, pp. 13-20
Authors:
SCHAPERS T
ENGELS G
LANGE J
KLOCKE T
HOLLFELDER M
LUTH H
Citation: T. Schapers et al., EFFECT OF THE HETEROINTERFACE ON THE SPIN SPLITTING IN MODULATION-DOPED INXGA1-XAS INP QUANTUM-WELLS FOR B-]O/, Journal of applied physics, 83(8), 1998, pp. 4324-4333
Authors:
UNGERMANNS C
AHE MVD
CARIUS R
FORSTER A
HOLLFELDER M
HARDTDEGEN H
MATT M
NICOLL K
SCHMIDT R
SETZER B
LUTH H
Citation: C. Ungermanns et al., OPTIMIZATION OF III V BINARY GROWTH WITH RHEED IN MOMBE/, Fresenius' journal of analytical chemistry, 358(1-2), 1997, pp. 101-104
Authors:
SCHIMPF K
SOMMER M
HORSTMANN M
HOLLFELDER M
VANDERHART A
MARSO M
KORDOS P
LUTH H
Citation: K. Schimpf et al., 0.1-MU-M T-GATE AL-FREE INP INGAAS/INP PHEMTS FOR W-BAND APPLICATIONSUSING A NITROGEN CARRIER FOR LP-MOCVD GROWTH/, IEEE electron device letters, 18(4), 1997, pp. 144-146
Authors:
PEINER E
WEHMANN HH
IBER H
MO S
TANG GP
BARTELS A
SCHLACHETZKI A
KOCH A
DETTMER K
HOLLFELDER M
Citation: E. Peiner et al., HIGH-QUALITY IN0.53GA0.47AS ON EXACTLY (001)-ORIENTED SI GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 172(1-2), 1997, pp. 44-52
Authors:
HOLLFELDER M
HON S
SETZER B
SCHIMPF K
HORSTMANN M
SCHAPERS T
SCHMITZ D
HARDTDEGEN H
LUTH H
Citation: M. Hollfelder et al., DEMONSTRATION OF THE N-2 CARRIER PROCESS FOR LP-MOVPE OF III VS/, Journal of crystal growth, 170(1-4), 1997, pp. 103-108
Authors:
HARTMANN A
BONGARTZ M
HOLLFELDER M
HARDTDEGEN H
DIEKER C
LUTH H
Citation: A. Hartmann et al., GROWTH OF MODULATION-DOPED GAAS ALGAAS QUANTUM WIRES ON V-GROOVE PATTERNED SUBSTRATES/, Journal of crystal growth, 170(1-4), 1997, pp. 605-610
Authors:
LEUTHER A
HOLLFELDER M
HARDTDEGEN H
LUTH H
Citation: A. Leuther et al., EXPERIMENTAL REALIZATION OF A 2-DIMENSIONAL TO 2-DIMENSIONAL TUNNEL TRANSISTOR, Semiconductor science and technology, 11(5), 1996, pp. 772-775
Authors:
GOLUBOV AA
KLOCKE T
KAUFMANN J
SCHAPERS T
APPENZELLER J
UHLISCH D
USTINOV AV
HOLLFELDER M
LUTH H
BRAGINSKI AI
Citation: Aa. Golubov et al., PROPERTIES OF LATERAL NB CONTACTS TO A 2-DIMENSIONAL ELECTRON-GAS IN AN IN0.77GA0.23AS INP HETEROSTRUCTURE/, Physical review. B, Condensed matter, 54(23), 1996, pp. 17018-17028
Authors:
TIETZE MF
SCHAPERS T
APPENZELLER J
ENGELS G
HOLLFELDER M
LENGELER B
LUTH H
Citation: Mf. Tietze et al., QUANTIZED CONDUCTANCE IN A SPLIT-GATE POINT-CONTACT BASED ON A PSEUDOMORPHIC INGAAS INP HETEROSTRUCTURE/, Journal of applied physics, 79(2), 1996, pp. 871-875
Authors:
UHLISCH D
GOLUBOV AA
HOLLFELDER M
NEUROHR K
USTINOV AV
BRAGINSKI AI
LUTH H
Citation: D. Uhlisch et al., INVESTIGATION OF NB CONTACTS TO A GAINAS INP HETEROSTRUCTURE/, Czechoslovak journal of Physics, 46, 1996, pp. 657-658
Authors:
LAUTER J
BAUSER E
FORSTER A
HARDTDEGEN H
HOLLFELDER M
LUTH H
PROTIC D
ZEHENDER S
Citation: J. Lauter et al., EPITAXIAL GALLIUM-ARSENIDE FOR NUCLEAR RADIATION DETECTOR APPLICATIONS, Nuclear physics. B, 1995, pp. 381-385
Authors:
HARDTDEGEN H
RAAFAT T
HOLLFELDER M
UNGERMANNS C
Citation: H. Hardtdegen et al., A NEW METHOD FOR CONTROLLED CARBON DOPING IN LP-MOVPE OF GAAS USING TMAS AND MIXTURES OF TMGA TEGA/, Journal of crystal growth, 156(4), 1995, pp. 333-336
Authors:
MARSO M
SCHIMPF K
FOX A
VANDERHART A
HARDTDEGEN H
HOLLFELDER M
KORDOS P
LUTH H
Citation: M. Marso et al., NOVEL HEMT LAYOUT - THE ROUNDHEMT, Electronics Letters, 31(7), 1995, pp. 589-591
Authors:
HORSTMANN M
MARSO M
FOX A
RUDERS F
HOLLFELDER M
HARDTDEGEN H
KORDOS P
LUTH H
Citation: M. Horstmann et al., INP INGAAS PHOTODETECTOR BASED ON A HIGH-ELECTRON-MOBILITY TRANSISTORLAYER STRUCTURE - ITS RESPONSE AT 1.3 MU-M WAVELENGTH/, Applied physics letters, 67(1), 1995, pp. 106-108
Authors:
HOLLFELDER M
HARDTDEGEN H
MEYER R
CARIUS R
LUTH H
Citation: M. Hollfelder et al., (ALGA) AS GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING A N2 CARRIER, Journal of electronic materials, 23(10), 1994, pp. 1061-1065
Authors:
HARDTDEGEN H
UNGERMANNS C
HOLLFELDER M
RAAFAT T
CARIUS R
HASENOHRL S
LUTH H
Citation: H. Hardtdegen et al., A NEW APPROACH TOWARDS LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY OF (ALGA)AS USING TRIETHYLGALLIUM AND DIMETHYLETHYLAMINEALANE, Journal of crystal growth, 145(1-4), 1994, pp. 478-484
Authors:
MORSCH G
GRABER J
KAMP M
HOLLFELDER M
LUTH H
Citation: G. Morsch et al., THE SELECTIVELY GROWN PERMEABLE JUNCTION BASE TRANSISTOR WITH A GATE OF HIGHLY CARBON-DOPED GAAS, Journal of crystal growth, 136(1-4), 1994, pp. 256-260
Authors:
HARDTDEGEN H
MEYER R
HOLLFELDER M
SCHAPERS T
APPENZELLER J
LOKENLARSEN H
KLOCKE T
DIEKER C
LENGELER B
LUTH H
JAGER W
Citation: H. Hardtdegen et al., OPTIMIZATION OF MODULATION-DOPED GA1-XINXAS INP HETEROSTRUCTURES TOWARDS EXTREMELY HIGH MOBILITIES/, Journal of applied physics, 73(9), 1993, pp. 4489-4493
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