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Results:
1-23
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Results: 23
Authors:
Lee, ES
Ell, C
Brick, P
Spiegelberg, C
Gibbs, HM
Khitrova, G
Deppe, DG
Huffaker, DL
Citation: Es. Lee et al., Saturation of normal-mode coupling in aluminum-oxide-aperture semiconductor nanocavities, J APPL PHYS, 89(1), 2001, pp. 807-809
Authors:
Boggess, TF
Zhang, L
Deppe, DG
Huffaker, DL
Cao, C
Citation: Tf. Boggess et al., Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots, APPL PHYS L, 78(3), 2001, pp. 276-278
Authors:
Huffaker, DL
Park, G
Zou, ZZ
Shchekin, OB
Deppe, DG
Citation: Dl. Huffaker et al., Continuous-wave low-threshold performance of 1.3-mu m InGaAs-GaAs quantum-dot lasers, IEEE S T QU, 6(3), 2000, pp. 452-461
Authors:
Shchekin, OB
Park, G
Huffaker, DL
Mo, QW
Deppe, DG
Citation: Ob. Shchekin et al., Low-threshold, continous-wave two-stack quantum-dot laser with reduced temperature sensitivity, IEEE PHOTON, 12(9), 2000, pp. 1120-1122
Authors:
Par, G
Shchekin, OB
Huffaker, DL
Deppe, DG
Citation: G. Par et al., Low-threshold oxide-confined 1.3-mu m quantum-dot laser, IEEE PHOTON, 12(3), 2000, pp. 230-232
Authors:
Zou, Z
Huffaker, DL
Deppe, DG
Citation: Z. Zou et al., Ultralow-threshold cryogenic vertical-cavity surface-emitting laser, IEEE PHOTON, 12(1), 2000, pp. 1-3
Authors:
Ell, C
Brick, P
Hubner, M
Lee, ES
Lyngnes, O
Prineas, JP
Khitrova, G
Gibbs, HM
Kira, M
Jahnke, F
Koch, SW
Deppe, DG
Huffaker, DL
Citation: C. Ell et al., Quantum correlations in the nonperturbative regime of semiconductor microcavities, PHYS REV L, 85(25), 2000, pp. 5392-5395
Authors:
Park, G
Shchekin, OB
Huffaker, DL
Deppe, DG
Citation: G. Park et al., InGaAs quantum dot lasers with submilliamp thresholds and ultra-low threshold current density below room temperature, ELECTR LETT, 36(15), 2000, pp. 1283-1284
Authors:
Shchekin, OB
Park, G
Huffaker, DL
Deppe, DG
Citation: Ob. Shchekin et al., Discrete energy level separation and the threshold temperature dependence of quantum dot lasers, APPL PHYS L, 77(4), 2000, pp. 466-468
Authors:
Deppe, DG
Huffaker, DL
Citation: Dg. Deppe et Dl. Huffaker, Quantum dimensionality, entropy, and the modulation response of quantum dot lasers, APPL PHYS L, 77(21), 2000, pp. 3325-3327
Authors:
Zhang, L
Boggess, TF
Deppe, DG
Huffaker, DL
Shchekin, OB
Cao, C
Citation: L. Zhang et al., Dynamic response of 1.3-mu m-wavelength InGaAs/GaAs quantum dots, APPL PHYS L, 76(10), 2000, pp. 1222-1224
Authors:
Zaitsev, SV
Graham, LA
Huffaker, DL
Gordeev, NY
Kopchatov, VI
Karachinsky, LY
Novikov, II
Kop'ev, PS
Citation: Sv. Zaitsev et al., Superradiance in semiconductors, SEMICONDUCT, 33(12), 1999, pp. 1309-1314
Authors:
Huffaker, DL
Deppe, DG
Citation: Dl. Huffaker et Dg. Deppe, Intracavity contacts for low-threshold oxide-confined vertical-cavity surface-emitting lasers, IEEE PHOTON, 11(8), 1999, pp. 934-936
Authors:
Park, G
Huffaker, DL
Zou, Z
Shchekin, OB
Deppe, DG
Citation: G. Park et al., Temperature dependence of lasing characteristics for long-wavelength (1.3-mu m) GaAs-based quantum-dot lasers, IEEE PHOTON, 11(3), 1999, pp. 301-303
Authors:
Huffaker, DL
Zou, ZZ
Park, G
Shchekin, OB
Deppe, DG
Citation: Dl. Huffaker et al., Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 mu m) GaAs-based quantum dot lasers, J ELEC MAT, 28(5), 1999, pp. 532-536
Authors:
Krishna, S
Zhu, D
Xu, J
Linder, KK
Qasaimeh, O
Bhattacharya, P
Huffaker, DL
Citation: S. Krishna et al., Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 mu m, J APPL PHYS, 86(11), 1999, pp. 6135-6138
Authors:
Graham, LA
Huffaker, DL
Csutak, SM
Deng, Q
Deppe, DG
Citation: La. Graham et al., Spontaneous lifetime control of quantum dot emitters in apertured microcavities, J APPL PHYS, 85(6), 1999, pp. 3383-3385
Authors:
Deppe, DG
Huffaker, DL
Csutak, S
Zou, Z
Park, G
Shchekin, OB
Citation: Dg. Deppe et al., Spontaneous emission and threshold characteristics of 1.3-mu m InGaAs-GaAsquantum-dot GaAs-based lasers, IEEE J Q EL, 35(8), 1999, pp. 1238-1246
Authors:
Deppe, DG
Graham, LA
Huffaker, DL
Citation: Dg. Deppe et al., Enhanced spontaneous emission using quantum dots and an apertured microcavity, IEEE J Q EL, 35(10), 1999, pp. 1502-1508
Authors:
Park, G
Shchekin, OB
Csutak, S
Huffaker, DL
Deppe, DG
Citation: G. Park et al., Room-temperature continuous-wave operation of a single-layered 1.3 mu m quantum dot laser, APPL PHYS L, 75(21), 1999, pp. 3267-3269
Authors:
Zou, Z
Huffaker, DL
Csutak, S
Deppe, DG
Citation: Z. Zou et al., Ground state lasing from a quantum-dot oxide-confined vertical-cavity surface-emitting laser, APPL PHYS L, 75(1), 1999, pp. 22-24
Authors:
Graham, LA
Huffaker, DL
Deppe, DG
Citation: La. Graham et al., Spontaneous lifetime control in a native-oxide-apertured microcavity, APPL PHYS L, 74(17), 1999, pp. 2408-2410
Authors:
Park, G
Shchekin, OB
Huffaker, DL
Deppe, DG
Citation: G. Park et al., Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels, APPL PHYS L, 73(23), 1998, pp. 3351-3353
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