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Results: 1-20 |
Results: 20
POLAR SURFACE DEPENDENCE OF EPITAXY PROCESSES - ZNSE ON GAAS(111)A, B-(2X2)
Authors: OHTAKE A MIWA S KUO LH KIMURA K YASUDA T JIN CG YAO T
Citation: A. Ohtake et al., POLAR SURFACE DEPENDENCE OF EPITAXY PROCESSES - ZNSE ON GAAS(111)A, B-(2X2), Applied surface science, 132, 1998, pp. 398-402
DEFECT GENERATION IN LAYER-BY-LAYER-GROWN ZNSE FILMS ON TE-TERMINATEDGAAS(001) SURFACES
Authors: OHTAKE A KUO LH KIMURA K MIWA S YASUDA T JIN CG YAO TF NAKAJIMA K KIMURA K
Citation: A. Ohtake et al., DEFECT GENERATION IN LAYER-BY-LAYER-GROWN ZNSE FILMS ON TE-TERMINATEDGAAS(001) SURFACES, Physical review. B, Condensed matter, 57(3), 1998, pp. 1410-1413
ZNSE HETEROEPITAXY ON GAAS(001) AND GAAS(110)
Authors: MIWA S KUO LH KIMURA K OHTAKE A YASUDA T JIN CG YAO T
Citation: S. Miwa et al., ZNSE HETEROEPITAXY ON GAAS(001) AND GAAS(110), Journal of crystal growth, 185, 1998, pp. 41-45
CHARACTERIZATION AND CONTROL OF II-VI III-V HETEROVALENT INTERFACES/
Authors: OHTAKE A MIWA S KUO LH YASUDA T KIMURA K JIN CG YAO T
Citation: A. Ohtake et al., CHARACTERIZATION AND CONTROL OF II-VI III-V HETEROVALENT INTERFACES/, Journal of crystal growth, 185, 1998, pp. 163-172
ATOMIC NITROGEN DOPING IN P-ZNSE WITH HIGH ACTIVATION RATIO USING A HIGH-POWER PLASMA SOURCE
Authors: KIMURA K MIWA S JIN CG KUO LH YASUDA T OHTAKE A TANAKA K YAO T KOBAYASHI H
Citation: K. Kimura et al., ATOMIC NITROGEN DOPING IN P-ZNSE WITH HIGH ACTIVATION RATIO USING A HIGH-POWER PLASMA SOURCE, Journal of crystal growth, 185, 1998, pp. 411-414
THE ROLE OF ZINC PREEXPOSURE IN LOW-DEFECT ZNSE GROWTH ON AS-STABILIZED GAAS(001)
Authors: MIWA S KUO LH KIMURA K YASUDA T OHTAKE A JIN CG YAO T
Citation: S. Miwa et al., THE ROLE OF ZINC PREEXPOSURE IN LOW-DEFECT ZNSE GROWTH ON AS-STABILIZED GAAS(001), Applied physics letters, 73(7), 1998, pp. 939-941
NONCONTACT AND NONDESTRUCTIVE MEASUREMENT OF CARRIER CONCENTRATION OFNITROGEN-DOPED ZNSE BY REFLECTANCE DIFFERENCE SPECTROSCOPY
Authors: JIN CG YASUDA T KIMURA K OHTAKE A KUO LH WANG TH MIWA S YAO T TANAKA K
Citation: Cg. Jin et al., NONCONTACT AND NONDESTRUCTIVE MEASUREMENT OF CARRIER CONCENTRATION OFNITROGEN-DOPED ZNSE BY REFLECTANCE DIFFERENCE SPECTROSCOPY, JPN J A P 1, 36(11), 1997, pp. 6638-6644
REFLECTANCE-DIFFERENCE STUDIES OF INTERFACE-FORMATION AND INITIAL-GROWTH PROCESSES IN ZNSE GAAS(001) HETEROEPITAXY/
Authors: YASUDA T KIMURA K MIWA S KUO LH OHTAKE A JIN CG TANAKA K
Citation: T. Yasuda et al., REFLECTANCE-DIFFERENCE STUDIES OF INTERFACE-FORMATION AND INITIAL-GROWTH PROCESSES IN ZNSE GAAS(001) HETEROEPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1212-1220
MOLECULAR-BEAM EPITAXIAL-GROWTH OF P-ZNSE-N USING A NOVEL PLASMA SOURCE
Authors: KIMURA K MIWA S YASUDA T KUO LH OHTAKE A JIN CG TANAKA K YAO T
Citation: K. Kimura et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF P-ZNSE-N USING A NOVEL PLASMA SOURCE, Journal of electronic materials, 26(6), 1997, pp. 705-709
SURFACE PROCESSES DURING HETEROEPITAXY OF ZNSE ON GAAS(111)A AS OBSERVED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
Authors: OHTAKE A MIWA S KUO LH KIMURA K YASUDA T JIN CG YAO T
Citation: A. Ohtake et al., SURFACE PROCESSES DURING HETEROEPITAXY OF ZNSE ON GAAS(111)A AS OBSERVED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, Physical review. B, Condensed matter, 56(23), 1997, pp. 14909-14912
INTEGRATION OF HIGH-RISK HUMAN PAPILLOMAVIRUS DNA IS LINKED TO THE DOWN-REGULATION OF CLASS-I HUMAN-LEUKOCYTE ANTIGENS BY STEROID-HORMONES IN CERVICAL TUMOR-CELLS
Authors: BARTHOLOMEW JS GLENVILLE S SARKAR S BURT DJ STANLEY MA RUIZCABELLO F JIN CG GARRIDO F STERN PL
Citation: Js. Bartholomew et al., INTEGRATION OF HIGH-RISK HUMAN PAPILLOMAVIRUS DNA IS LINKED TO THE DOWN-REGULATION OF CLASS-I HUMAN-LEUKOCYTE ANTIGENS BY STEROID-HORMONES IN CERVICAL TUMOR-CELLS, Cancer research, 57(5), 1997, pp. 937-942
ZNSE EPITAXY AN A GAAS(110) SURFACE
Authors: MIWA S KUO LH KIMURA K OHTAKE A YASUDA T JIN CG YAO T
Citation: S. Miwa et al., ZNSE EPITAXY AN A GAAS(110) SURFACE, Applied physics letters, 71(9), 1997, pp. 1192-1194
ATOMIC NITROGEN DOPING IN P-ZNSE MOLECULAR-BEAM EPITAXIAL-GROWTH WITHALMOST 100-PERCENT ACTIVATION RATIO
Authors: KIMURA K MIWA S JIN CG KUO LH YASUDA T OHTAKE A TANAKA K YAO T KOBAYASHI H
Citation: K. Kimura et al., ATOMIC NITROGEN DOPING IN P-ZNSE MOLECULAR-BEAM EPITAXIAL-GROWTH WITHALMOST 100-PERCENT ACTIVATION RATIO, Applied physics letters, 71(8), 1997, pp. 1077-1079
THE EFFECT OF NITROGEN-IONS EMITTED FROM A PLASMA SOURCE ON MOLECULAR-BEAM EPITAXIAL-GROWTH OF P-ZNSE-N
Authors: KIMURA K MIWA S KAJIYAMA H YASUDA T KUO LH JIN CG TANAKA K YAO T
Citation: K. Kimura et al., THE EFFECT OF NITROGEN-IONS EMITTED FROM A PLASMA SOURCE ON MOLECULAR-BEAM EPITAXIAL-GROWTH OF P-ZNSE-N, Applied physics letters, 71(4), 1997, pp. 485-487
EFFICIENT DOPING OF NITROGEN WITH HIGH ACTIVATION RATIO INTO ZNSE USING A HIGH-POWER PLASMA SOURCE
Authors: KIMURA K MIWA S YASUDA T KUO LH JIN CG TANAKA K
Citation: K. Kimura et al., EFFICIENT DOPING OF NITROGEN WITH HIGH ACTIVATION RATIO INTO ZNSE USING A HIGH-POWER PLASMA SOURCE, Applied physics letters, 70(1), 1997, pp. 81-83
SITU CHARACTERIZATION OF ZNSE GAAS(100) INTERFACES BY REFLECTANCE DIFFERENCE SPECTROSCOPY/
Authors: YASUDA T KUO LH KIMURA K MIWA S JIN CG TANAKA K YAO T
Citation: T. Yasuda et al., SITU CHARACTERIZATION OF ZNSE GAAS(100) INTERFACES BY REFLECTANCE DIFFERENCE SPECTROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3052-3057
MEASUREMENT OF INTERFACE-INDUCED OPTICAL ANISOTROPIES OF A SEMICONDUCTOR HETEROSTRUCTURE - ZNSE GAAS(100)/
Authors: YASUDA T KIMURA K MIWA S KUO LH JIN CG TANAKA K YAO T
Citation: T. Yasuda et al., MEASUREMENT OF INTERFACE-INDUCED OPTICAL ANISOTROPIES OF A SEMICONDUCTOR HETEROSTRUCTURE - ZNSE GAAS(100)/, Physical review letters, 77(2), 1996, pp. 326-329
EFFECTS OF INTERFACIAL CHEMISTRY ON THE FORMATION OF INTERFACIAL LAYERS AND FAULTED DEFECTS IN ZNSE GAAS/
Authors: KUO LH KIMURA K YASUDA T MIWA S JIN CG TANAKA K YAO T
Citation: Lh. Kuo et al., EFFECTS OF INTERFACIAL CHEMISTRY ON THE FORMATION OF INTERFACIAL LAYERS AND FAULTED DEFECTS IN ZNSE GAAS/, Applied physics letters, 68(17), 1996, pp. 2413-2415
SERUM LEVELS OF GROWTH-FACTOR RECEPTORS, EGFR AND NEU IN ASBESTOSIS PATIENTS - A FOLLOW-UP-STUDY
Authors: PARTANEN R HEMMINKI K BRANDTRAUF P JIN CG KOSKINEN H
Citation: R. Partanen et al., SERUM LEVELS OF GROWTH-FACTOR RECEPTORS, EGFR AND NEU IN ASBESTOSIS PATIENTS - A FOLLOW-UP-STUDY, International journal of oncology, 4(5), 1994, pp. 1025-1028
IN-SITU PHOTOTHERMAL SPECTROSCOPY METHOD FOR INVESTIGATING SURFACE CHANGES DURING ELECTROPLATING OF NICKEL
Authors: JIANG ZY XIANG Y QIAN B JIN CG SHI BW SHAN SP
Citation: Zy. Jiang et al., IN-SITU PHOTOTHERMAL SPECTROSCOPY METHOD FOR INVESTIGATING SURFACE CHANGES DURING ELECTROPLATING OF NICKEL, Journal of electroanalytical chemistry [1992], 361(1-2), 1993, pp. 257-260
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