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Results: 1-25 | 26-33
Results: 1-25/33
Work function engineering of molybdenum gate electrode by nitrogen implantation
Authors: Ranade, P Takeuchi, H King, TJ Hu, CM
Citation: P. Ranade et al., Work function engineering of molybdenum gate electrode by nitrogen implantation, EL SOLID ST, 4(11), 2001, pp. G85-G87
Integrated MEMS technologies
Authors: Franke, AE King, TJ Howe, RT
Citation: Ae. Franke et al., Integrated MEMS technologies, MRS BULL, 26(4), 2001, pp. 291-295
Dual work function metal gate CMOS technology using metal interdiffusion
Authors: Polishchuk, I Ranade, P King, TJ Hu, CM
Citation: I. Polishchuk et al., Dual work function metal gate CMOS technology using metal interdiffusion, IEEE ELEC D, 22(9), 2001, pp. 444-446
Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain
Authors: Choi, YK Ha, DW King, TJ Hu, CM
Citation: Yk. Choi et al., Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain, IEEE ELEC D, 22(9), 2001, pp. 447-448
Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric
Authors: Lu, Q Yeo, YC Yang, KJ Lin, R Polishchuk, I King, TJ Hu, CM Song, SC Luan, HF Kwong, DL Guo, X Luo, ZJ Wang, XW Ma, TP
Citation: Q. Lu et al., Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric, IEEE ELEC D, 22(7), 2001, pp. 324-326
Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric
Authors: Yeo, YC Lu, Q Ranade, P Takeuchi, H Yang, KJ Polishchuk, I King, TJ Hu, C Song, SC Luan, HF Kwong, DL
Citation: Yc. Yeo et al., Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric, IEEE ELEC D, 22(5), 2001, pp. 227-229
Sub-60-nm quasi-planar FinFETs fabricated using a simplified process
Authors: Lindert, N Chang, LL Choi, YK Anderson, EH Lee, WC King, TJ Bokor, J Hu, CM
Citation: N. Lindert et al., Sub-60-nm quasi-planar FinFETs fabricated using a simplified process, IEEE ELEC D, 22(10), 2001, pp. 487-489
Ovulated pig oocyte production using transcutaneous ultrasonography to determine ovulation time
Authors: King, TJ Dobrinsky, JR Bracken, J McCorquodale, C Wilmut, I
Citation: Tj. King et al., Ovulated pig oocyte production using transcutaneous ultrasonography to determine ovulation time, VET REC, 149(12), 2001, pp. 362-363
Optimization of sub-5-nm multiple-thickness gate oxide formed by oxygen implantation
Authors: King, YC Kuo, C King, TJ Hu, CM
Citation: Yc. King et al., Optimization of sub-5-nm multiple-thickness gate oxide formed by oxygen implantation, IEEE DEVICE, 48(6), 2001, pp. 1279-1281
Sub-50 nm p-channel FinFET
Authors: Huang, XJ Lee, WC Kuo, C Hisamoto, D Chang, LL Kedzierski, J Anderson, E Takeuchi, H Choi, YK Asano, K Subramanian, V King, TJ Bokor, J Hu, CM
Citation: Xj. Huang et al., Sub-50 nm p-channel FinFET, IEEE DEVICE, 48(5), 2001, pp. 880-886
Patterning sub-30-nm MOSFET gate with i-line lithography
Authors: Asano, K Choi, YK King, TJ Hu, CM
Citation: K. Asano et al., Patterning sub-30-nm MOSFET gate with i-line lithography, IEEE DEVICE, 48(5), 2001, pp. 1004-1006
Charge-trap memory device fabricated by oxidation of Si1-xGex
Authors: King, YC King, TJ Hu, CM
Citation: Yc. King et al., Charge-trap memory device fabricated by oxidation of Si1-xGex, IEEE DEVICE, 48(4), 2001, pp. 696-700
Pattern generators and microcolumns far ion beam lithography
Authors: Scott, KL King, TJ Lieberman, MA Leung, KN
Citation: Kl. Scott et al., Pattern generators and microcolumns far ion beam lithography, J VAC SCI B, 18(6), 2000, pp. 3172-3176
A 20 nm gate-length ultra-thin body p-MOSFET with silicide source/drain
Authors: Kedzierski, J Xuan, PQ Subramanian, V Bokor, J King, TJ Hu, CM Anderson, E
Citation: J. Kedzierski et al., A 20 nm gate-length ultra-thin body p-MOSFET with silicide source/drain, SUPERLATT M, 28(5-6), 2000, pp. 445-452
Ultrathin-body SOI MOSFET for deep-sub-tenth micron era
Authors: Choi, YK Asano, K Lindert, N Subramanian, V King, TJ Bokor, J Hu, CM
Citation: Yk. Choi et al., Ultrathin-body SOI MOSFET for deep-sub-tenth micron era, IEEE ELEC D, 21(5), 2000, pp. 254-255
Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel
Authors: Yeo, YC Subramanian, V Kedzierski, J King, TJ Bokor, J Hu, CM Xuan, PQ
Citation: Yc. Yeo et al., Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel, IEEE ELEC D, 21(4), 2000, pp. 161-163
Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric
Authors: Yeo, YC Lu, Q Lee, WC King, TJ Hu, CM Wang, XW Guo, X Ma, TP
Citation: Yc. Yeo et al., Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric, IEEE ELEC D, 21(11), 2000, pp. 540-542
Comparative effects of all-trans beta-carotene vs. 9-cis beta-carotene on carcinogen-induced neoplastic transformation and connexin 43 expression in murine 10T1/2 cells and on the differentiation of human keratinocytes
Authors: Hieber, AD King, TJ Morioka, S Fukushima, LH Franke, AA Bertram, JS
Citation: Ad. Hieber et al., Comparative effects of all-trans beta-carotene vs. 9-cis beta-carotene on carcinogen-induced neoplastic transformation and connexin 43 expression in murine 10T1/2 cells and on the differentiation of human keratinocytes, NUTR CANCER, 37(2), 2000, pp. 234-244
Reduced levels of connexin43 in cervical dysplasia: inducible expression in a cervical carcinoma cell line decreases neoplastic potential with implications for tumor progression
Authors: King, TJ Fukushima, LH Hieber, AD Shimabukuro, KA Sakr, WA Bertram, JS
Citation: Tj. King et al., Reduced levels of connexin43 in cervical dysplasia: inducible expression in a cervical carcinoma cell line decreases neoplastic potential with implications for tumor progression, CARCINOGENE, 21(6), 2000, pp. 1097-1109
Correlation between growth control, neoplastic potential and endogenous connexin43 expression in HeLa cell lines: implications for tumor progression
Authors: King, TJ Fukushima, LH Donlon, TA Hieber, AD Shimabukuro, KA Bertram, JS
Citation: Tj. King et al., Correlation between growth control, neoplastic potential and endogenous connexin43 expression in HeLa cell lines: implications for tumor progression, CARCINOGENE, 21(2), 2000, pp. 311-315
FinFET - A self-aligned double-gate MOSFET scalable to 20 nm
Authors: Hisamoto, D Lee, WC Kedzierski, J Takeuchi, H Asano, K Kuo, C Anderson, E King, TJ Bokor, J Hu, CM
Citation: D. Hisamoto et al., FinFET - A self-aligned double-gate MOSFET scalable to 20 nm, IEEE DEVICE, 47(12), 2000, pp. 2320-2325
Systemic mycosis due to Aspergillus deflectus in a dog
Authors: Robinson, WF Connole, MD King, TJ Pitt, JI Moss, SM
Citation: Wf. Robinson et al., Systemic mycosis due to Aspergillus deflectus in a dog, AUST VET J, 78(9), 2000, pp. 600-602
Acute pancreatitis associated with celecoxib
Authors: Baciewicz, AM Sokos, DR King, TJ
Citation: Am. Baciewicz et al., Acute pancreatitis associated with celecoxib, ANN INT MED, 132(8), 2000, pp. 680-680
Thermal and cyclic loading of endodontic posts
Authors: Drummond, JL Toepke, TRS King, TJ
Citation: Jl. Drummond et al., Thermal and cyclic loading of endodontic posts, EUR J OR SC, 107(3), 1999, pp. 220-224
A comparison of hydrogen and deuterium plasma treatment effects on polysilicon TFT performance and DC reliability
Authors: Tung, YJ Boyce, J Ho, J Huang, XJ King, TJ
Citation: Yj. Tung et al., A comparison of hydrogen and deuterium plasma treatment effects on polysilicon TFT performance and DC reliability, IEEE ELEC D, 20(8), 1999, pp. 387-389
Risultati: 1-25 | 26-33