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Results: 1-25 | 26-41
Results: 1-25/41
FIRST PRINCIPLES STUDIES OF POINT-DEFECTS AND IMPURITIES IN CUBIC BORON-NITRIDE
Authors: CASTINEIRA JLP LEITE JR SCOLFARO LMR ENDERLEIN R ALVES JLA ALVES HWL
Citation: Jlp. Castineira et al., FIRST PRINCIPLES STUDIES OF POINT-DEFECTS AND IMPURITIES IN CUBIC BORON-NITRIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 53-57
FANO-LIKE ELECTRON-PHONON INTERFERENCE IN DELTA-DOPING GAAS SUPERLATTICES
Authors: PUSEP YA SILVA MTO GALZERANI JC DASILVA SW SCOLFARO LMR ENDERLEIN R QUIVY AA LIMA AP LEITE JR
Citation: Ya. Pusep et al., FANO-LIKE ELECTRON-PHONON INTERFERENCE IN DELTA-DOPING GAAS SUPERLATTICES, Superlattices and microstructures, 23(5), 1998, pp. 1033-1035
SPATIALLY DIRECT RECOMBINATIONS OBSERVED IN MULTIPLE DELTA-DOPED GAAS-LAYERS
Authors: LEVINE A DASILVA ECF SCOLFARO LMR BELIAEV D QUIVY AA ENDERLEIN R LEITE JR
Citation: A. Levine et al., SPATIALLY DIRECT RECOMBINATIONS OBSERVED IN MULTIPLE DELTA-DOPED GAAS-LAYERS, Superlattices and microstructures, 23(2), 1998, pp. 301-306
PARAMETERS OF THE KANE MODEL FROM EFFECTIVE MASSES - AMBIGUITIES AND INSTABILITIES
Authors: ENDERLEIN R SIPAHI GM SCOLFARO LMR LEITE JR
Citation: R. Enderlein et al., PARAMETERS OF THE KANE MODEL FROM EFFECTIVE MASSES - AMBIGUITIES AND INSTABILITIES, Physica status solidi. b, Basic research, 206(2), 1998, pp. 623-633
MINIBAND STRUCTURES AND EFFECTIVE MASSES OF N-TYPE DELTA-DOPING SUPERLATTICES IN GAN
Authors: RODRIGUES SCP ROSA AL SCOLFARO LMR BELIAEV D LEITE JR ENDERLEIN R ALVES JLA
Citation: Scp. Rodrigues et al., MINIBAND STRUCTURES AND EFFECTIVE MASSES OF N-TYPE DELTA-DOPING SUPERLATTICES IN GAN, Semiconductor science and technology, 13(9), 1998, pp. 981-988
SPATIAL CONFINEMENT OF SELF-ORGANIZED MBE-GROWN INXGA1-XAS QUANTUM DOTS
Authors: QUIVY AA LEITE JR
Citation: Aa. Quivy et Jr. Leite, SPATIAL CONFINEMENT OF SELF-ORGANIZED MBE-GROWN INXGA1-XAS QUANTUM DOTS, Microelectronic engineering, 43-4, 1998, pp. 19-23
HOLE BAND-STRUCTURE OF P-TYPE DELTA-DOPING QUANTUM-WELLS IN SILICON
Authors: ROSA AL SCOLFARO LMR SIPAHI GM ENDERLEIN R LEITE JR
Citation: Al. Rosa et al., HOLE BAND-STRUCTURE OF P-TYPE DELTA-DOPING QUANTUM-WELLS IN SILICON, Microelectronic engineering, 43-4, 1998, pp. 489-496
THEORY OF LUMINESCENCE SPECTRA FROM S-DOPING STRUCTURES - APPLICATIONTO GAAS
Authors: SIPAHI GM ENDERLEIN R SCOLFARO LMR LEITE JR DASILVA ECF LEVINE A
Citation: Gm. Sipahi et al., THEORY OF LUMINESCENCE SPECTRA FROM S-DOPING STRUCTURES - APPLICATIONTO GAAS, Physical review. B, Condensed matter, 57(15), 1998, pp. 9168-9178
DENSITY-FUNCTIONAL THEORY FOR HOLES IN SEMICONDUCTORS - REPLY
Authors: ENDERLEIN R SIPAHI GM SCOLFARO LMR LEITE JR
Citation: R. Enderlein et al., DENSITY-FUNCTIONAL THEORY FOR HOLES IN SEMICONDUCTORS - REPLY, Physical review letters, 80(14), 1998, pp. 3160-3160
SENSITIVITY-ENHANCED REFLECTION Z-SCAN BY OBLIQUE-INCIDENCE OF A POLARIZED BEAM
Authors: MARTINELLI M BIAN S LEITE JR HOROWICZ RJ
Citation: M. Martinelli et al., SENSITIVITY-ENHANCED REFLECTION Z-SCAN BY OBLIQUE-INCIDENCE OF A POLARIZED BEAM, Applied physics letters, 72(12), 1998, pp. 1427-1429
ZINCBLENDE GAN - AB-INITIO CALCULATIONS
Authors: ALVES JLA ALVES HWL DEOLIVEIRA C VALADAO RDSC LEITE JR
Citation: Jla. Alves et al., ZINCBLENDE GAN - AB-INITIO CALCULATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 57-60
ATOMIC-STRUCTURE OF THE GAN(100,110,111) SURFACES
Authors: ALVES JLA ALVES HWL DEOLIVEIRA C VALADAO RDSC LEITE JR
Citation: Jla. Alves et al., ATOMIC-STRUCTURE OF THE GAN(100,110,111) SURFACES, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 288-291
MINIBANDS OF P-TYPE DELTA-DOPING SUPERLATTICES IN GAAS
Authors: RAMOS LE SIPAHI GM SCOLFARO LMR ENDERLEIN R LEITE JR
Citation: Le. Ramos et al., MINIBANDS OF P-TYPE DELTA-DOPING SUPERLATTICES IN GAAS, Superlattices and microstructures, 22(4), 1997, pp. 443-451
COLLECTIVE EXCITATION IN GAAS-ALXGA1-XAS QUANTUM WIRES - MULTISUBBANDMODEL
Authors: MACHADO PCM LEITE JR OSORIO FAP BORGES AN
Citation: Pcm. Machado et al., COLLECTIVE EXCITATION IN GAAS-ALXGA1-XAS QUANTUM WIRES - MULTISUBBANDMODEL, Physical review. B, Condensed matter, 56(7), 1997, pp. 4128-4131
ENHANCED PHOTOLUMINESCENCE FROM POROUS SILICON FORMED BY NONSTANDARD PREPARATION
Authors: BELOGOROKHOV AI ENDERLEIN R TABATA A LEITE JR KARAVANSKII VA BELOGOROKHOVA LI
Citation: Ai. Belogorokhov et al., ENHANCED PHOTOLUMINESCENCE FROM POROUS SILICON FORMED BY NONSTANDARD PREPARATION, Physical review. B, Condensed matter, 56(16), 1997, pp. 10276-10282
POLARIZABILITY OF A DONOR IMPURITY IN A GAAS-ALGAAS QUANTUM-WIRE
Authors: OSORIO FAP BORGES AN CAPARICA AA LEITE JR
Citation: Fap. Osorio et al., POLARIZABILITY OF A DONOR IMPURITY IN A GAAS-ALGAAS QUANTUM-WIRE, Solid state communications, 103(6), 1997, pp. 375-380
DENSITY-FUNCTIONAL THEORY FOR HOLES IN SEMICONDUCTORS
Authors: ENDERLEIN R SIPAHI GM SCOLFARO LMR LEITE JR
Citation: R. Enderlein et al., DENSITY-FUNCTIONAL THEORY FOR HOLES IN SEMICONDUCTORS, Physical review letters, 79(19), 1997, pp. 3712-3715
RAMAN-STUDY OF FANO-LIKE ELECTRON-PHONON COUPLING IN DELTA-DOPING GAAS SUPERLATTICES
Authors: PUSEP YA SILVA MTO GALZERANI JC DASILVA SW SCOLFARO LMR ENDERLEIN R QUIVY AA LIMA AP LEITE JR
Citation: Ya. Pusep et al., RAMAN-STUDY OF FANO-LIKE ELECTRON-PHONON COUPLING IN DELTA-DOPING GAAS SUPERLATTICES, Physical review. B, Condensed matter, 54(19), 1996, pp. 13927-13931
BAND-STRUCTURE OF HOLES IN P-TYPE DELTA-DOPING QUANTUM-WELLS AND SUPERLATTICES
Authors: SIPAHI GM ENDERLEIN R SCOLFARO LMR LEITE JR
Citation: Gm. Sipahi et al., BAND-STRUCTURE OF HOLES IN P-TYPE DELTA-DOPING QUANTUM-WELLS AND SUPERLATTICES, Physical review. B, Condensed matter, 53(15), 1996, pp. 9930-9942
STRUCTURAL-PROPERTIES OF CUBIC GAN EPITAXIAL LAYERS GROWN ON BETA-SIC
Authors: TELES LK SCOLFARO LMR ENDERLEIN R LEITE JR JOSIEK A SCHIKORA D LISCHKA K
Citation: Lk. Teles et al., STRUCTURAL-PROPERTIES OF CUBIC GAN EPITAXIAL LAYERS GROWN ON BETA-SIC, Journal of applied physics, 80(11), 1996, pp. 6322-6328
COMPARATIVE RAMAN STUDIES OF CUBIC AND HEXAGONAL GAN EPITAXIAL LAYERS
Authors: TABATA A ENDERLEIN R LEITE JR DASILVA SW GALZERANI JC SCHIKORA D KLOIDT M LISCHKA K
Citation: A. Tabata et al., COMPARATIVE RAMAN STUDIES OF CUBIC AND HEXAGONAL GAN EPITAXIAL LAYERS, Journal of applied physics, 79(8), 1996, pp. 4137-4140
BEHAVIOR OF CARRIERS IN DELTA-DOPED QUANTUM-WELLS UNDER INPLANE MAGNETIC-FIELDS
Authors: LINO AT TAKAHASHI EK SCOLFARO LMR LEITE JR
Citation: At. Lino et al., BEHAVIOR OF CARRIERS IN DELTA-DOPED QUANTUM-WELLS UNDER INPLANE MAGNETIC-FIELDS, International journal of quantum chemistry, 60(7), 1996, pp. 347-354
ELECTRICAL-CONDUCTIVITY OF DELTA-DOPING SUPERLATTICES PARALLEL TO THEGROWTH DIRECTION
Authors: LEITE JR RODRIGUES SCP SCOLFARO LMR ENDERLEIN R BELIAEV D QUIVY AA
Citation: Jr. Leite et al., ELECTRICAL-CONDUCTIVITY OF DELTA-DOPING SUPERLATTICES PARALLEL TO THEGROWTH DIRECTION, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 250-255
PHOTOREFLECTANCE INVESTIGATIONS OF SEMICONDUCTOR-DEVICE STRUCTURES
Authors: SOARES JANT BELIAEV D ENDERLEIN R SCOLFARO LMR SAITO M LEITE JR
Citation: Jant. Soares et al., PHOTOREFLECTANCE INVESTIGATIONS OF SEMICONDUCTOR-DEVICE STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 267-272
COMPARATIVE-STUDIES OF PHOTOLUMINESCENCE FROM N-DELTA-DOPING AND P-DELTA-DOPING WELLS IN GAAS
Authors: ENDERLEIN R SIPAHI GM SCOLFARO LMR LEITE JR DIAZ IFL
Citation: R. Enderlein et al., COMPARATIVE-STUDIES OF PHOTOLUMINESCENCE FROM N-DELTA-DOPING AND P-DELTA-DOPING WELLS IN GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 396-400
Risultati: 1-25 | 26-41