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Results: 1-25/70
Authors:
LIOU JJ
FREDRICKSON AG
SRIENC F
Citation: Jj. Liou et al., SELECTIVE SYNCHRONIZATION OF TETRAHYMENA-PYRIFORMIS CELL-POPULATIONS AND CELL-GROWTH KINETICS DURING THE CELL-CYCLE, Biotechnology progress, 14(3), 1998, pp. 450-456
Authors:
LIOU JJ
HUANG G
HSU W
Citation: Jj. Liou et al., EXPERIMENTAL-STUDY OF A VARIABLE-PRESSURE DAMPER ON AN AUTOMOTIVE VALVE TRAIN, Journal of mechnical design, 120(2), 1998, pp. 279-281
Authors:
ORTIZCONDE A
RODRIGUEZ J
SANCHEZ FJG
LIOU JJ
Citation: A. Ortizconde et al., AN IMPROVED DEFINITION FOR MODELING THE THRESHOLD VOLTAGE OF MOSFETS, Solid-state electronics, 42(9), 1998, pp. 1743-1746
Authors:
ZHOU W
SHEU S
LIOU JJ
HUANG CI
Citation: W. Zhou et al., A MULTI-EMITTER FINGER ALGAAS GAAS HBT MODEL INCLUDING THE EFFECTS OF2-DIMENSIONAL TEMPERATURE DISTRIBUTION ON EMITTER FINGERS/, Solid-state electronics, 42(5), 1998, pp. 693-698
Authors:
WONG WS
ICE A
LIOU JJ
Citation: Ws. Wong et al., AN EMPIRICAL-MODEL FOR THE CHARACTERIZATION OF HOT-CARRIER-INDUCED MOS DEVICE DEGRADATION, Solid-state electronics, 42(1), 1998, pp. 173-175
Authors:
LIOU JJ
Citation: Jj. Liou, LONG-TERM BASE CURRENT INSTABILITY IN ALGAAS GAAS HBTS - PHYSICAL-MECHANISMS, MODELING, AND SPICE SIMULATION/, Microelectronics and reliability, 38(5), 1998, pp. 709-725
Authors:
SHEU S
LIOU JJ
HUANG CI
Citation: S. Sheu et al., NUMERICAL-ANALYSIS ON DETERMINING THE PHYSICAL-MECHANISMS CONTRIBUTING TO THE ABNORMAL BASE CURRENT IN POST-BURN-IN ALGAAS GAAS HBTS/, Microelectronics and reliability, 38(1), 1998, pp. 163-170
Authors:
SHEU S
LIOU JJ
HUANG CI
Citation: S. Sheu et al., A NEW APPROACH FOR SPICE SIMULATION OF ALGAAS GAAS HBT SUBJECTED TO BURN-IN TEST/, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 326-329
Authors:
VINSON JE
LIOU JJ
Citation: Je. Vinson et Jj. Liou, ELECTROSTATIC DISCHARGE IN SEMICONDUCTOR-DEVICES - AN OVERVIEW, Proceedings of the IEEE, 86(2), 1998, pp. 399-418
Authors:
HASSAN MR
LIOU JJ
ORTIZCONDE A
Citation: Mr. Hassan et al., GATE OXIDE THICKNESS DEPENDENCE OF LDD MOSFET PARAMETERS, Solid-state electronics, 41(8), 1997, pp. 1199-1201
Authors:
HASSAN MR
LIOU JJ
ORTIZCONDE A
SANCHEZ FJG
FERNANDES EG
Citation: Mr. Hassan et al., DRAIN AND SOURCE RESISTANCES OF SHORT-CHANNEL LDD MOSFETS, Solid-state electronics, 41(5), 1997, pp. 778-780
Authors:
LIOU JJ
SHEU SH
Citation: Jj. Liou et Sh. Sheu, FAILURE-MECHANISM AND SPICE MODELING OF ALGAAS GAAS HBT LONG-TERM CURRENT INSTABILITY/, Microelectronics and reliability, 37(10-11), 1997, pp. 1643-1650
Authors:
LIOU JJ
XUE J
CAO X
ZHOU W
Citation: Jj. Liou et al., MODEL FOR THE QUASI-NEUTRAL REGION CAPACITANCE OF P N JUNCTION DEVICES/, Journal of applied physics, 81(12), 1997, pp. 8074-8078
Authors:
ORTIZCONDE A
FERNANDES EDG
LIOU JJ
HASSAN MR
GARCIASANCHEZ FJ
DEMERCATO G
WONG WS
Citation: A. Ortizconde et al., A NEW APPROACH TO EXTRACT THE THRESHOLD VOLTAGE OF MOSFETS, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1523-1528
Authors:
LATIF Z
ORTIZCONDE A
LIOU JJ
SANCHEZ FJG
Citation: Z. Latif et al., A STUDY OF THE VALIDITY OF CAPACITANCE-BASED METHOD FOR EXTRACTING THE EFFECTIVE CHANNEL-LENGTH OF MOSFETS, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 340-343
Authors:
LIOU JJ
SRIENC F
FREDRICKSON AG
Citation: Jj. Liou et al., SOLUTIONS OF POPULATION BALANCE MODELS BASED ON A SUCCESSIVE GENERATIONS APPROACH, Chemical Engineering Science, 52(9), 1997, pp. 1529-1540
Authors:
YUE Y
LIOU JJ
ORTIZCONDE A
SANCHEZ FG
Citation: Y. Yue et al., A COMPREHENSIVE STUDY OF HIGH-LEVEL FREE-CARRIER INJECTION IN BIPOLARJUNCTION TRANSISTORS, JPN J A P 1, 35(7), 1996, pp. 3845-3851
Authors:
SANCHEZ FJG
ORTIZCONDE A
LIOU JJ
Citation: Fjg. Sanchez et al., PARASITIC SERIES RESISTANCE-INDEPENDENT METHOD FOR DEVICE-MODEL PARAMETER EXTRACTION, IEE proceedings. Circuits, devices and systems, 143(1), 1996, pp. 68-70
Authors:
YUE Y
LIOU JJ
BATARSEH I
Citation: Y. Yue et al., AN ANALYTICAL INSULATED-GATE BIPOLAR-TRANSISTOR (IGBT) MODEL FOR STEADY-STATE AND TRANSIENT APPLICATIONS UNDER ALL FREE-CARRIER INJECTION CONDITIONS, Solid-state electronics, 39(9), 1996, pp. 1277-1282
Authors:
LATIF Z
LIOU JJ
ORTIZCONDE A
SANCHEZ FJG
WANG W
CHEN YG
Citation: Z. Latif et al., ANALYSIS OF THE VALIDITY OF METHODS FOR EXTRACTING THE EFFECTIVE CHANNEL-LENGTH OF SHORT-CHANNEL LDD MOSFETS, Solid-state electronics, 39(7), 1996, pp. 1093-1094
Authors:
LIOU JJ
SHEU SH
HUANG CI
WILLIAMSON DC
Citation: Jj. Liou et al., BIAS AND TEMPERATURE DEPENDENCIES OF BASE AND COLLECTOR LEAKAGE CURRENTS OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Solid-state electronics, 39(3), 1996, pp. 415-418
Authors:
ORTIZCONDE A
SANCHEZ FJG
LIOU JJ
Citation: A. Ortizconde et al., AN IMPROVED METHOD FOR EXTRACTING THE DIFFERENCE BETWEEN DRAIN AND SOURCE RESISTANCES IN MOSFETS, Solid-state electronics, 39(3), 1996, pp. 419-421
Authors:
KAGER A
LIOU JJ
Citation: A. Kager et Jj. Liou, 2-DIMENSIONAL NUMERICAL-ANALYSIS OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS INCLUDING THE EFFECTS OF GRADED LAYER, SETBACK LAYER ANDSELF-HEATING/, Solid-state electronics, 39(2), 1996, pp. 193-199
Authors:
ORTIZCONDE A
LIOU JJ
NARAYANAN R
SANCHEZ FJG
Citation: A. Ortizconde et al., DETERMINATION OF PHYSICAL-MECHANISMS CONTRIBUTING TO THE DIFFERENCE BETWEEN DRAIN AND SOURCE RESISTANCES IN SHORT-CHANNEL MOSFETS, Solid-state electronics, 39(2), 1996, pp. 211-215
Authors:
YUE Y
LIOU JJ
Citation: Y. Yue et Jj. Liou, EFFECTS OF INCOMPLETE IONIZATION OF IMPURITY DOPANTS ON THE PERFORMANCE OF BIPOLAR JUNCTION TRANSISTORS, Solid-state electronics, 39(2), 1996, pp. 318-320