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Results: 1-25 | 26-29
Results: 1-25/29
COHERENT TERAHERTZ RADIATION DETECTION - DIRECT COMPARISON BETWEEN FREE-SPACE ELECTROOPTIC SAMPLING AND ANTENNA DETECTION
Authors: CAI Y BRENER I LOPATA J WYNN J PFEIFFER L STARK JB WU Q ZHANG XC FEDERICI JF
Citation: Y. Cai et al., COHERENT TERAHERTZ RADIATION DETECTION - DIRECT COMPARISON BETWEEN FREE-SPACE ELECTROOPTIC SAMPLING AND ANTENNA DETECTION, Applied physics letters, 73(4), 1998, pp. 444-446
TEMPERATURE PERFORMANCE OF 1.3-MU-M INGAASP-INP LASERS WITH DIFFERENTPROFILE OF P-DOPING
Authors: BELENKY GL DONETSKY DV REYNOLDS CL KAZARINOV RF SHTENGEL GE LURYI S LOPATA J
Citation: Gl. Belenky et al., TEMPERATURE PERFORMANCE OF 1.3-MU-M INGAASP-INP LASERS WITH DIFFERENTPROFILE OF P-DOPING, IEEE photonics technology letters, 9(12), 1997, pp. 1558-1560
SEMICONDUCTOR OPTICAL AMPLIFIER FOR WAVELENGTH CONVERSION IN SUBCARRIER MULTIPLEXED SYSTEMS
Authors: FREEMAN PN DUTTA NK LOPATA J
Citation: Pn. Freeman et al., SEMICONDUCTOR OPTICAL AMPLIFIER FOR WAVELENGTH CONVERSION IN SUBCARRIER MULTIPLEXED SYSTEMS, IEEE photonics technology letters, 9(1), 1997, pp. 46-48
HIGH-POWER INGAAS GAASP/INGAP SURFACE-EMITTING LASER/
Authors: TAYAHI MB DUTTA NK HOBSON WS VAKHSHOORI D LOPATA J WYNN J
Citation: Mb. Tayahi et al., HIGH-POWER INGAAS GAASP/INGAP SURFACE-EMITTING LASER/, Electronics Letters, 33(21), 1997, pp. 1794-1795
DESIGN AND PERFORMANCE OF SINGULAR ELECTRIC-FIELD TERAHERTZ PHOTOCONDUCTING ANTENNAS
Authors: CAI Y BRENER I LOPATA J WYNN J PFEIFFER L FEDERICI J
Citation: Y. Cai et al., DESIGN AND PERFORMANCE OF SINGULAR ELECTRIC-FIELD TERAHERTZ PHOTOCONDUCTING ANTENNAS, Applied physics letters, 71(15), 1997, pp. 2076-2078
TUNABLE INGAAS GAAS INGAP LASER
Authors: DUTTA NK HOBSON WS LOPATA J ZYDZIK G
Citation: Nk. Dutta et al., TUNABLE INGAAS GAAS INGAP LASER, Applied physics letters, 70(10), 1997, pp. 1219-1220
BCL3 N-2 DRY-ETCHING OF INP, INALP, AND INGAP
Authors: REN F LOTHIAN JR KUO JM HOBSON WS LOPATA J CABALLERO JA PEARTON SJ COLE MW
Citation: F. Ren et al., BCL3 N-2 DRY-ETCHING OF INP, INALP, AND INGAP, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1758-1763
HIGH-SPEED MODULATION OF STRAIN-COMPENSATED INGAAS-GAASP-INGAP MULTIPLE-QUANTUM-WELL LASERS
Authors: HAN H FREEMAN PN HOBSON WS DUTTA NK LOPATA J WYNN JD CHU SNG
Citation: H. Han et al., HIGH-SPEED MODULATION OF STRAIN-COMPENSATED INGAAS-GAASP-INGAP MULTIPLE-QUANTUM-WELL LASERS, IEEE photonics technology letters, 8(9), 1996, pp. 1133-1135
STRAIN COMPENSATED INGAAS-GAASP-INGAP LASER
Authors: DUTTA NK HOBSON WS VAKHSHOORI D HAN H FREEMAN PN DEJONG JF LOPATA J
Citation: Nk. Dutta et al., STRAIN COMPENSATED INGAAS-GAASP-INGAP LASER, IEEE photonics technology letters, 8(7), 1996, pp. 852-854
TERAHERTZ EMISSION FROM ELECTRIC-FIELD SINGULARITIES IN BIASED SEMICONDUCTORS
Authors: BRENER I DYKAAR D FROMMER A PFEIFFER LN LOPATA J WYNN J WEST K NUSS MC
Citation: I. Brener et al., TERAHERTZ EMISSION FROM ELECTRIC-FIELD SINGULARITIES IN BIASED SEMICONDUCTORS, Optics letters, 21(23), 1996, pp. 1924-1926
DIRECT MODULATION AND OPTICAL CONFINEMENT FACTOR MODULATION OF SEMICONDUCTOR-LASERS
Authors: FROMMER A LURYI S NICHOLS DT LOPATA J HOBSON WS
Citation: A. Frommer et al., DIRECT MODULATION AND OPTICAL CONFINEMENT FACTOR MODULATION OF SEMICONDUCTOR-LASERS, Fiber and integrated optics, 15(2), 1996, pp. 81-88
ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING OF INP AND RELATED MATERIALS IN BCL3
Authors: REN F HOBSON WS KUO JM LOTHIAN JR LOPATA J PEARTON SJ CABALLERO JA
Citation: F. Ren et al., ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING OF INP AND RELATED MATERIALS IN BCL3, Solid-state electronics, 39(5), 1996, pp. 695-698
A SURFACE MODIFICATION STUDY OF INGAP ETCHED WITH AN ELECTRON-CYCLOTRON-RESONANCE SOURCE AT VARIABLE MICROWAVE POWERS
Authors: COLE MW HAN WY PFEFFER RL ECKART DW REN F HOBSON WS LOTHIAN JR LOPATA J CABALLERO JA PEARTON SJ
Citation: Mw. Cole et al., A SURFACE MODIFICATION STUDY OF INGAP ETCHED WITH AN ELECTRON-CYCLOTRON-RESONANCE SOURCE AT VARIABLE MICROWAVE POWERS, Journal of applied physics, 79(6), 1996, pp. 3286-3289
EFFECT OF P-DOPING PROFILE ON PERFORMANCE OF STRAINED MULTI-QUANTUM-WELL INGAASP-INP LASERS
Authors: BELENKY GL REYNOLDS CL KAZARINOV RF SWAMINATHAN V LURYI SL LOPATA J
Citation: Gl. Belenky et al., EFFECT OF P-DOPING PROFILE ON PERFORMANCE OF STRAINED MULTI-QUANTUM-WELL INGAASP-INP LASERS, IEEE journal of quantum electronics, 32(8), 1996, pp. 1450-1455
980 NM SPREAD INDEX LASER WITH STRAIN COMPENSATED INGAAS GAASP/INGAP AND 90-PERCENT FIBER COUPLING EFFICIENCY/
Authors: VAKHSHOORI D HOBSON WS HAN H LOPATA J HENEIN GE WYNN JD DEJONG J SCHNOES ML ZYDZIK GJ
Citation: D. Vakhshoori et al., 980 NM SPREAD INDEX LASER WITH STRAIN COMPENSATED INGAAS GAASP/INGAP AND 90-PERCENT FIBER COUPLING EFFICIENCY/, Electronics Letters, 32(11), 1996, pp. 1007-1008
EXTREMELY HIGH ETCH RATES OF IN-BASED III-V SEMICONDUCTORS IN BCL(3) N-2 BASED PLASMA/
Authors: REN F HOBSON WS LOTHIAN JR LOPATA J PEARTON SJ CABALLERO JA COLE MW
Citation: F. Ren et al., EXTREMELY HIGH ETCH RATES OF IN-BASED III-V SEMICONDUCTORS IN BCL(3) N-2 BASED PLASMA/, Journal of the Electrochemical Society, 143(10), 1996, pp. 3394-3396
INFRARED MICROSCOPY STUDIES ON HIGH-POWER INGAAS-GAAS-INGAP LASERS WITH GA2O3 FACET COATINGS
Authors: PASSLACK M BETHEA CG HOBSON WS LOPATA J SCHUBERT EF ZYDZIK GJ NICHOLS DT DEJONG JF CHAKRABARTI UK DUTTA NK
Citation: M. Passlack et al., INFRARED MICROSCOPY STUDIES ON HIGH-POWER INGAAS-GAAS-INGAP LASERS WITH GA2O3 FACET COATINGS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 110-116
DIRECT MEASUREMENT OF THE CARRIER LEAKAGE OUT OF THE ACTIVE-REGION ININGAASP INP LASER HETEROSTRUCTURES/
Authors: BELENKY GL KAZARINOV RF LOPATA J LURYI S TANBUNELK T GARBINSKI PA
Citation: Gl. Belenky et al., DIRECT MEASUREMENT OF THE CARRIER LEAKAGE OUT OF THE ACTIVE-REGION ININGAASP INP LASER HETEROSTRUCTURES/, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 215-218
HIGH-RATE DRY-ETCHING OF INGAP IN BCL3 PLASMA CHEMISTRIES
Authors: REN F HOBSON WS LOTHIAN JR LOPATA J CABALLERO JA PEARTON SJ COLE MW
Citation: F. Ren et al., HIGH-RATE DRY-ETCHING OF INGAP IN BCL3 PLASMA CHEMISTRIES, Applied physics letters, 67(17), 1995, pp. 2497-2499
DIRECT MODULATION AND OPTICAL CONFINEMENT FACTOR MODULATION OF SEMICONDUCTOR-LASERS
Authors: FROMMER A LURYI S NICHOLS DT LOPATA J HOBSON WS
Citation: A. Frommer et al., DIRECT MODULATION AND OPTICAL CONFINEMENT FACTOR MODULATION OF SEMICONDUCTOR-LASERS, Applied physics letters, 67(12), 1995, pp. 1645-1647
MONOLITHIC OPTICAL TRANSMITTER CIRCUIT USING THE INGAP GAAS MATERIAL SYSTEM/
Authors: NICHOLS DT LOPATA J HOBSON WS SMITH PR DUTTA NK
Citation: Dt. Nichols et al., MONOLITHIC OPTICAL TRANSMITTER CIRCUIT USING THE INGAP GAAS MATERIAL SYSTEM/, Applied physics letters, 66(9), 1995, pp. 1033-1034
CARBON-DOPED IMPURITY-INDUCED LAYER DISORDER 0.98 MU-M LASERS
Authors: BYLSMA RB HOBSON WS LOPATA J ZYDZIK GJ GEVA M ASOM MT PEARTON SJ THOMAS PM BRIDENBAUGH PM WASHINGTON MA ROCCASECCA DD WILT DP
Citation: Rb. Bylsma et al., CARBON-DOPED IMPURITY-INDUCED LAYER DISORDER 0.98 MU-M LASERS, Journal of applied physics, 76(1), 1994, pp. 590-592
GROWTH AND FABRICATION OF HIGH-PERFORMANCE 980-NM STRAINED INGAAS QUANTUM-WELL LASERS FOR ERBIUM-DOPED FIBER AMPLIFIERS
Authors: CHAND N CHU SNG DUTTA NK LOPATA J GEVA M SYRBU AV MEREUTZA AZ YAKOVLEV VP
Citation: N. Chand et al., GROWTH AND FABRICATION OF HIGH-PERFORMANCE 980-NM STRAINED INGAAS QUANTUM-WELL LASERS FOR ERBIUM-DOPED FIBER AMPLIFIERS, IEEE journal of quantum electronics, 30(2), 1994, pp. 424-440
MONOLITHIC GAAS ALGAAS OPTICAL TRANSMITTER CIRCUIT USING A SINGLE GROWTH STEP/
Authors: NICHOLS DT LOPATA J HOBSON WS DUTTA NK BERGER PR SIVCO DL CHO AY
Citation: Dt. Nichols et al., MONOLITHIC GAAS ALGAAS OPTICAL TRANSMITTER CIRCUIT USING A SINGLE GROWTH STEP/, Electronics Letters, 30(6), 1994, pp. 490-491
SYMMETRY, STRESS ALIGNMENT, AND REORIENTATION KINETICS OF THE SI(AS)-H COMPLEX IN GAAS
Authors: KOZUCH DM STAVOLA M SPECTOR SJ PEARTON SJ LOPATA J
Citation: Dm. Kozuch et al., SYMMETRY, STRESS ALIGNMENT, AND REORIENTATION KINETICS OF THE SI(AS)-H COMPLEX IN GAAS, Physical review. B, Condensed matter, 48(12), 1993, pp. 8751-8756
Risultati: 1-25 | 26-29