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LYSENKO VS
TYAGULSKI IP
LOZOVSKI VZ
GOMENIUK YV
OSIYUK IN
VARIUKHIN VN
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Authors:
NAZAROV AN
PINCHUK VM
LYSENKO VS
YANCHUK TV
ASHOK S
Citation: An. Nazarov et al., ENHANCED ACTIVATION OF IMPLANTED DOPANT IMPURITY IN HYDROGENATED CRYSTALLINE SILICON, Physical review. B, Condensed matter, 58(7), 1998, pp. 3522-3525
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LYSENKO VS
TYAGULSKI IP
GOMENIUK YV
OSIYUK IN
TKACH II
Citation: Vs. Lysenko et al., THERMALLY STIMULATED CHARACTERIZATION OF SHALLOW TRAPS IN THE SIC SI HETEROJUNCTION/, Journal of physics. D, Applied physics, 31(13), 1998, pp. 1499-1503
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LYSENKO VS
GOMENIUK YV
TYAGULSKI IP
OSIYUK IN
LOZOVSKI VZ
VARYUKHIN VN
Citation: Vs. Lysenko et al., FLUX-PINNING UNDER THE STRONG ELECTROSTATIC-FIELD IN THE BIPBSRCACUO FILM, Physica. C, Superconductivity, 281(4), 1997, pp. 303-309
Authors:
BARCHUK IP
KILCHITSKAYA VI
LYSENKO VS
NAZAROV AN
RUDENKO TE
DJURENKO SV
RUDENKO AN
YURCHENKO AP
BALLUTAUD D
COLINGE JP
Citation: Ip. Barchuk et al., ELECTRICAL-PROPERTIES AND RADIATION HARDNESS OF SOI SYSTEMS WITH MULTILAYER BURIED DIELECTRIC, IEEE transactions on nuclear science, 44(6), 1997, pp. 2542-2552
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LYSENKO VS
GOMENIUK YV
TYAGULSKI IP
OSIYUK IN
LOZOVSKI VZ
VARYUKHIN VN
Citation: Vs. Lysenko et al., THERMALLY ACTIVATED DISSIPATION AND UPPER CRITICAL MAGNETIC-FIELD UNDER THE STRONG ELECTROSTATIC-FIELD IN THE BIPBSRCACUO THIN-FILM, Journal de physique. IV, 6(C3), 1996, pp. 271-276
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NAZAROV AN
PINCHUK VM
LYSENKO VS
YANCHUK TV
Citation: An. Nazarov et al., QUANTUM-CHEMICAL INVESTIGATIONS OF ATOMIC-HYDROGEN EFFECT ON FRENKEL PAIRS ANNIHILATION IN SILICON, Modelling and simulation in materials science and engineering, 4(3), 1996, pp. 323-333
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PINCHUK VM
NAZAROV AN
LYSENKO VS
KOVALEV VM
Citation: Vm. Pinchuk et al., MECHANISMS OF INTERACTIONS BETWEEN ATOMIC-HYDROGEN AND VACANCIES IN THE SILICON CRYSTAL-LATTICE, Journal of structural chemistry, 37(1), 1996, pp. 18-23
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LYSENKO VS
GOMENIUK YV
OSIYUK IN
TYAGULSKI IP
Citation: Vs. Lysenko et al., INVESTIGATION OF TRAPS IN THE NSIC-PSI INTERFACE AT CRYOGENIC TEMPERATURES, Microelectronic engineering, 28(1-4), 1995, pp. 205-208
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RUDENKO TE
RUDENKO AN
NAZAROV AN
LYSENKO VS
Citation: Te. Rudenko et al., CHARACTERIZATION OF SOI BY CAPACITANCE AND CURRENT MEASUREMENTS WITH COMBINED GATED DIODE AND DEPLETION-MODE MOSFET STRUCTURE, Microelectronic engineering, 28(1-4), 1995, pp. 475-478
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LYSENKO VS
GOMENIUK YV
LOZOVSKI VZ
TYAGULSKI IP
VARYUKHIN VN
Citation: Vs. Lysenko et al., ELECTRIC-FIELD EFFECT ON EXCESS CONDUCTIVITY IN HIGH-T-C SUPERCONDUCTORS, Physica. C, Superconductivity, 235, 1994, pp. 2631-2632
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GOMENIUK YV
LOZOVSKI VZ
LYSENKO VS
TYAGULSKI IP
Citation: Yv. Gomeniuk et al., CRITICAL CURRENTS IN OXYGEN-IMPLANTED YBA2CU3O7-DELTA THIN-FILMS UNDER MAGNETIC AND ELECTROSTATIC FIELDS, Physica. C, Superconductivity, 214(1-2), 1993, pp. 127-132
Citation: Yd. Tkachev et al., MODELING OF RADIATION-INDUCED CHARGE TRAPPING AT THE SI-ASTERISK-SIO2INTERFACE OF MOS STRUCTURES, Physica status solidi. a, Applied research, 140(1), 1993, pp. 163-171
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GOMENYUK YV
LYSENKO VS
OSIYUK IN
TYAGULSKII IP
Citation: Yv. Gomenyuk et al., THE BEHAVIOR OF MINORITY-CARRIERS IN THERMALLY STIMULATED STUDIES OF THE SI-SIO2 INTERFACE, Physica status solidi. a, Applied research, 140(1), 1993, pp. 173-178
Authors:
LYSENKO VS
KOPEV PS
NAZAROV AN
NAUMOVETS GA
POPOV VB
TKACHENKO AS
VASILIEV AM
USTINOV VM
Citation: Vs. Lysenko et al., THERMAL REACTIVATION OF NONRADIATIVE RECOMBINATION CENTERS IN HYDROGENATED ALXGA1-XASSI, Physica status solidi. a, Applied research, 139(2), 1993, pp. 541-547