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Results: 1-25/27
Authors:
UEDONO A
OHSHIMA T
ITOH H
SUZUKI R
OHDAIRA T
TANIGAWA S
AOKI Y
YOSHIKAWA M
NASHIYAMA I
MIKADO T
Citation: A. Uedono et al., INVESTIGATION OF VACANCY-TYPE DEFECTS IN P-IMPLANTED 6H-SIC USING MONOENERGETIC POSITRON BEAMS(), JPN J A P 1, 37(5A), 1998, pp. 2422-2429
Authors:
OHSHIMA T
YOSHIKAWA M
ITOH H
AOKI Y
NASHIYAMA I
Citation: T. Ohshima et al., GENERATION OF INTERFACE TRAPS AND OXIDE-TRAPPED CHARGE IN 6H-SIC METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY GAMMA-RAY IRRADIATION, JPN J A P 2, 37(8B), 1998, pp. 1002-1004
Authors:
HAMANO T
HIRAO T
NASHIYAMA I
SAKAI T
KAMIYA T
ISHII K
TAKEBE M
Citation: T. Hamano et al., DIAGNOSIS OF THE PROFILE OF THE HEAVY-ION MICROBEAM AND ESTIMATION OFTHE AIMING ACCURACY OF THE SINGLE-ION-HIT WITH CASING CR-39, Radiation physics and chemistry (1993), 53(5), 1998, pp. 461-467
Authors:
OHSHIMA T
UEDONO A
ABE K
ITOH H
AOKI Y
YOSHIKAWA M
TANIGAWA S
NASHIYAMA I
Citation: T. Ohshima et al., CHARACTERIZATION OF VACANCY-TYPE DEFECTS AND PHOSPHORUS DONORS INTRODUCED IN 6H-SIC BY ION-IMPLANTATION, Applied physics A: Materials science & processing, 67(4), 1998, pp. 407-412
Authors:
KAWASUSO A
ITOH H
MORISHITA N
YOSHIKAWA M
OHSHIMA T
NASHIYAMA I
OKADA S
OKUMURA H
YOSHIDA S
Citation: A. Kawasuso et al., SILICON VACANCIES IN 3C-SIC OBSERVED BY POSITRON LIFETIME AND ELECTRON-SPIN-RESONANCE, Applied physics A: Materials science & processing, 67(2), 1998, pp. 209-212
Authors:
UEDONO A
ITOH H
OHSHIMA T
SUZUKI R
OHDAIRA T
TANIGAWA S
AOKI Y
YOSHIKAWA M
NASHIYAMA I
MIKADO T
OKUMURA H
YOSHIDA S
Citation: A. Uedono et al., ANNEALING PROPERTIES OF DEFECTS IN ION-IMPLANTED 3C-SIC STUDIED USINGMONOENERGETIC POSITRON BEAMS, JPN J A P 1, 36(11), 1997, pp. 6650-6660
Authors:
YOSHIKAWA M
SAITOH K
OHSHIMA T
ITOH H
NASHIYAMA I
OKUMURA H
YOSHIDA S
Citation: M. Yoshikawa et al., FORMATION OF OXIDE-TRAPPED CHARGES IN 6H-SIC MOS STRUCTURES, Radiation physics and chemistry, 50(5), 1997, pp. 429-433
Authors:
OHYAMA H
VANHELLEMONT J
TAKAMI Y
SUNAGA H
NASHIYAMA I
UWATOKO Y
POORTMANS J
CAYMAX M
Citation: H. Ohyama et al., DEGRADATION OF SIGE DEVICES BY PROTON IRRADIATION, Radiation physics and chemistry, 50(4), 1997, pp. 341-346
Authors:
ITOH H
UEDONO A
OHSHIMA T
AOKI Y
YOSHIKAWA M
NASHIYAMA I
TANIGAWA S
OKUMURA H
YOSHIDA S
Citation: H. Itoh et al., POSITRON-ANNIHILATION STUDIES OF DEFECTS IN 3C-SIC HOT-IMPLANTED WITHNITROGEN AND ALUMINUM IONS, Applied physics A: Materials science & processing, 65(3), 1997, pp. 315-323
Authors:
YOSHIKAWA M
NEMOTO N
ITOH H
NASHIYAMA I
OKUMURA H
MISAWA S
YOSHIDA S
Citation: M. Yoshikawa et al., THERMAL ANNEALING OF INTERFACE TRAPS AND TRAPPED CHARGES INDUCED BY IRRADIATION IN OXIDES OF 3C-SIC METAL-OXIDE-SEMICONDUCTOR STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 47(3), 1997, pp. 218-223
Authors:
HAMANO T
TAKEBE M
HIRAO T
NASHIYAMA I
KAMIYA T
SUDA T
SAKAI T
Citation: T. Hamano et al., DEVELOPMENT OF HIGH-RESOLUTION SINGLE-ION PSD USING RANDOM-ACCESS MEMORIES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 130(1-4), 1997, pp. 280-284
Authors:
HIRAO T
NASHIYAMA I
KAMIYA T
SUDA T
SAKAI T
HAMANO T
Citation: T. Hirao et al., EFFECT OF ION POSITION ON SINGLE-EVENT TRANSIENT CURRENT, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 130(1-4), 1997, pp. 486-490
Authors:
NISHIJIMA T
SEKIGUCHI H
HIRAO T
NASHIYAMA I
NEMOTO N
MATSUDA S
SHIONO N
Citation: T. Nishijima et al., STUDY OF BASIC MECHANISMS OF SEMICONDUCTOR-DEVICES USING ION-BEAM-INDUCED CHARGE (IBIC) COLLECTION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 130(1-4), 1997, pp. 528-533
Authors:
ITOH H
KAWASUSO A
OHSHIMA T
YOSHIKAWA M
NASHIYAMA I
TANIGAWA S
MISAWA S
OKUMURA H
YOSHIDA S
Citation: H. Itoh et al., INTRINSIC DEFECTS IN CUBIC SILICON-CARBIDE, Physica status solidi. a, Applied research, 162(1), 1997, pp. 173-198
Authors:
ITOH H
OHSHIMA T
AOKI Y
ABE K
YOSHIKAWA M
NASHIYAMA I
OKUMURA H
YOSHIDA S
UEDONO A
TANIGAWA S
Citation: H. Itoh et al., CHARACTERIZATION OF RESIDUAL DEFECTS IN CUBIC SILICON-CARBIDE SUBJECTED TO HOT-IMPLANTATION AND SUBSEQUENT ANNEALING, Journal of applied physics, 82(11), 1997, pp. 5339-5347
Authors:
MORITA Y
OHSHIMA T
NASHIYAMA I
YAMAMOTO Y
KAWASAKI O
MATSUDA S
Citation: Y. Morita et al., ANOMALOUS DEGRADATION IN SILICON SOLAR-CELLS SUBJECTED TO HIGH-FLUENCE PROTON AND ELECTRON IRRADIATIONS, Journal of applied physics, 81(9), 1997, pp. 6491-6493
Authors:
UEDONO A
ITOH H
OHSHIMA T
AOKI Y
YOSHIKAWA M
NASHIYAMA I
OKUMURA H
YOSHIDA S
MORIYA T
KAWANO T
TANIGAWA S
Citation: A. Uedono et al., DEFECTS IN ION-IMPLANTED 3C-SIC PROBED BY A MONOENERGETIC POSITRON BEAM, JPN J A P 1, 35(12A), 1996, pp. 5986-5990
Authors:
OHYAMA H
VANHELLEMONT J
TAKAMI Y
HAYAMA K
TOKUYAMA J
HAKATA T
KUDOU T
SUNAGA H
NASHIYAMA I
UWATOKO Y
POORTMANS J
CAYMAX M
Citation: H. Ohyama et al., PROTON IRRADIATION EFFECTS ON THE PERFORMANCE OF SI1-XGEX DEVICES, Physica status solidi. a, Applied research, 158(1), 1996, pp. 325-332
Authors:
YOSHIKAWA MR
SAITOH K
OHSHIMA T
ITOH H
NASHIYAMA I
YOSHIDA S
OKUMURA H
TAKAHASHI Y
OHNISHI K
Citation: Mr. Yoshikawa et al., DEPTH PROFILE OF TRAPPED CHARGES IN OXIDE LAYER OF 6H-SIC METAL-OXIDE-SEMICONDUCTOR STRUCTURES, Journal of applied physics, 80(1), 1996, pp. 282-287
Authors:
OHSHIMA T
MORITA Y
NASHIYAMA I
KAWASAKI O
HISAMATSU T
NAKAO T
WAKOW Y
MATSUDA S
Citation: T. Ohshima et al., MECHANISM OF ANOMALOUS DEGRADATION OF SILICON SOLAR-CELLS SUBJECTED TO HIGH-FLUENCE IRRADIATION, IEEE transactions on nuclear science, 43(6), 1996, pp. 2990-2997
Authors:
OHYAMA H
VANHELLEMONT J
TAKAMI Y
HAYAMA K
SUNAGA H
NASHIYAMA I
UWATOKO Y
POORTMAN J
CAYMAX M
Citation: H. Ohyama et al., DEGRADATION AND RECOVERY OF PROTON-IRRADIATED SI1-XGEX EPITAXIAL DEVICES, IEEE transactions on nuclear science, 43(6), 1996, pp. 3089-3096
Authors:
OHYAMA H
HAYAMA K
VANHELLEMONT J
POORTMANS J
CAYMAX M
TAKAMI Y
SUNAGA H
NASHIYAMA I
UWATOKO Y
Citation: H. Ohyama et al., DEGRADATION OF SI1-XGEX EPITAXIAL DEVICES BY PROTON IRRADIATION, Applied physics letters, 69(16), 1996, pp. 2429-2431
Authors:
HIRAO T
NASHIYAMA I
KAMIYA T
NISHIJIMA T
Citation: T. Hirao et al., EFFECTS OF MICRO-BEAM INDUCED DAMAGE ON SINGLE-EVENT CURRENT MEASUREMENTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 104(1-4), 1995, pp. 508-514
Authors:
SEKIGUCHI H
NISHIJIMA T
NASHIYAMA I
MISAWA S
YOSHIDA S
Citation: H. Sekiguchi et al., STUDY OF 3C-SIC CRYSTAL DEFECTS BY MICROBEAM CHANNELING METHODS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 104(1-4), 1995, pp. 566-570
Authors:
ITOH H
YOSHIKAWA M
NASHIYAMA I
OKUMURA H
MISAWA S
YOSHIDA S
Citation: H. Itoh et al., PHOTOLUMINESCENCE OF RADIATION-INDUCED DEFECTS IN 3C-SIC EPITAXIALLY GROWN ON SI, Journal of applied physics, 77(2), 1995, pp. 837-842