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Results: 1-25 |
Results: 25
LATTICE SITTING OF PLATINUM ATOMS IN DILUTED SIGE ALLOYS
Authors: DOBACZEWSKI L NIELSEN KB LARSEN AN HANSEN JL GOSCINSKI K PEAKER AR
Citation: L. Dobaczewski et al., LATTICE SITTING OF PLATINUM ATOMS IN DILUTED SIGE ALLOYS, Acta Physica Polonica. A, 94(2), 1998, pp. 297-299
MAGNETIC CHARACTERIZATION OF SELF-ORGANIZED ERAS CLUSTERS USING TELEGRAPH NOISE SPECTROSCOPY
Authors: COPPINGER F GENOE J MAUDE DK KLEBER X RIGAL LB GENNSER U PORTAL JC SINGER KE RUTTER P TASKIN T PEAKER AR WRIGHT AC
Citation: F. Coppinger et al., MAGNETIC CHARACTERIZATION OF SELF-ORGANIZED ERAS CLUSTERS USING TELEGRAPH NOISE SPECTROSCOPY, Physical review. B, Condensed matter, 57(12), 1998, pp. 7182-7189
EXCHANGE SPLITTING AND SPIN DISORDER SCATTERING IN TMAS
Authors: RIGAL LB MAUDE DK PORTAL JC BENNETT M SINGER KE PEAKER AR HILL G PATE MA
Citation: Lb. Rigal et al., EXCHANGE SPLITTING AND SPIN DISORDER SCATTERING IN TMAS, Solid state communications, 106(6), 1998, pp. 373-377
LAPLACE-TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF THE G4GOLD-HYDROGEN COMPLEX IN SILICON
Authors: DEIXLER P TERRY J HAWKINS ID EVANSFREEMAN JH PEAKER AR RUBALDO L MAUDE DK PORTAL JC DOBACZEWSKI L NIELSEN KB LARSEN AN MESLI A
Citation: P. Deixler et al., LAPLACE-TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF THE G4GOLD-HYDROGEN COMPLEX IN SILICON, Applied physics letters, 73(21), 1998, pp. 3126-3128
SINGLE TEMPERATURE SCAN DETERMINATION OF DEFECT PARAMETERS IN DLTS EXPERIMENT
Authors: DOBACZEWSKI L KANCLERIS Z NIELSEN KB PEAKER AR
Citation: L. Dobaczewski et al., SINGLE TEMPERATURE SCAN DETERMINATION OF DEFECT PARAMETERS IN DLTS EXPERIMENT, Acta Physica Polonica. A, 92(4), 1997, pp. 724-726
THE INCORPORATION OF ERBIUM INTO MOLECULAR-BEAM EPITAXY-GROWN GALLIUM-ARSENIDE
Authors: RUTTER P SINGER KE PEAKER AR
Citation: P. Rutter et al., THE INCORPORATION OF ERBIUM INTO MOLECULAR-BEAM EPITAXY-GROWN GALLIUM-ARSENIDE, Journal of crystal growth, 182(3-4), 1997, pp. 247-254
STRONG LUMINESCENCE FROM ERBIUM IN SI SI1-XGEX/SI QUANTUM-WELL STRUCTURES/
Authors: HUDA MQ PEAKER AR EVANSFREEMAN JH HOUGHTON DC GILLIN WP
Citation: Mq. Huda et al., STRONG LUMINESCENCE FROM ERBIUM IN SI SI1-XGEX/SI QUANTUM-WELL STRUCTURES/, Electronics Letters, 33(13), 1997, pp. 1182-1183
MINORITY AND MAJORITY CARRIER TRAPS ASSOCIATED WITH OXIDATION-INDUCEDSTACKING-FAULTS IN SILICON
Authors: EVANS JH DAVIDSON JA SARITAS M VANDINI M QIAN Y PEAKER AR
Citation: Jh. Evans et al., MINORITY AND MAJORITY CARRIER TRAPS ASSOCIATED WITH OXIDATION-INDUCEDSTACKING-FAULTS IN SILICON, Materials science and technology, 11(7), 1995, pp. 696-701
LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW INSIGHT INTO DEFECT MICROSCOPY
Authors: DOBACZEWSKI L HAWKINS ID PEAKER AR
Citation: L. Dobaczewski et al., LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW INSIGHT INTO DEFECT MICROSCOPY, Materials science and technology, 11(10), 1995, pp. 1071-1073
DEEP STATES ASSOCIATED WITH OXIDATION-INDUCED STACKING-FAULTS IN RTA RHO-TYPE SILICON BEFORE AND AFTER COPPER DIFFUSION
Authors: SARITAS M PEAKER AR
Citation: M. Saritas et Ar. Peaker, DEEP STATES ASSOCIATED WITH OXIDATION-INDUCED STACKING-FAULTS IN RTA RHO-TYPE SILICON BEFORE AND AFTER COPPER DIFFUSION, Solid-state electronics, 38(5), 1995, pp. 1025-1034
SINGLE-DOMAIN SWITCHING INVESTIGATED USING TELEGRAPH NOISE SPECTROSCOPY - POSSIBLE EVIDENCE FOR MACROSCOPIC QUANTUM TUNNELING
Authors: COPPINGER F GENOE J MAUDE DK GENNSER U PORTAL JC SINGER KE RUTTER P TASKIN T PEAKER AR WRIGHT AC
Citation: F. Coppinger et al., SINGLE-DOMAIN SWITCHING INVESTIGATED USING TELEGRAPH NOISE SPECTROSCOPY - POSSIBLE EVIDENCE FOR MACROSCOPIC QUANTUM TUNNELING, Physical review letters, 75(19), 1995, pp. 3513-3516
STRUCTURE OF THE DX STATE FORMED BY DONORS IN (AL,GA)AS AND GA(AS,P)
Authors: DOBACZEWSKI L KACZOR P MISSOUS M PEAKER AR ZYTKIEWICZ ZR
Citation: L. Dobaczewski et al., STRUCTURE OF THE DX STATE FORMED BY DONORS IN (AL,GA)AS AND GA(AS,P), Journal of applied physics, 78(4), 1995, pp. 2468-2477
SHARP 1.54 MU-M LUMINESCENCE FROM POROUS ERBIUM IMPLANTED SILICON
Authors: TASKIN T GARDELIS S EVANS JH HAMILTON B PEAKER AR
Citation: T. Taskin et al., SHARP 1.54 MU-M LUMINESCENCE FROM POROUS ERBIUM IMPLANTED SILICON, Electronics Letters, 31(24), 1995, pp. 2132-2133
LIGHT-BEAM-INDUCED TRANSIENT SPECTROSCOPY OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
Authors: DAVIDSON JA EVANS JH PEAKER AR
Citation: Ja. Davidson et al., LIGHT-BEAM-INDUCED TRANSIENT SPECTROSCOPY OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 167-169
OPTICAL CHARACTERIZATION OF DEEP STATES ASSOCIATED WITH OXIDATION-INDUCED STACKING-FAULTS IN SILICON
Authors: CASTALDINI A CAVALLINI A EVANS JH HAWKINS ID PEAKER AR VANDINI M
Citation: A. Castaldini et al., OPTICAL CHARACTERIZATION OF DEEP STATES ASSOCIATED WITH OXIDATION-INDUCED STACKING-FAULTS IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 170-174
REGROWTH BEHAVIOR OF SI1-XGEX SI STRUCTURES FORMED BY GE+ ION-IMPLANTATION AND POST AMORPHIZATION/
Authors: ZHANG JP WILSON RJ HEMMENT PLF CLAVERIE A CRISTIANO F SALLES P WEN JQ EVANS JH PEAKER AR PARKER GJ
Citation: Jp. Zhang et al., REGROWTH BEHAVIOR OF SI1-XGEX SI STRUCTURES FORMED BY GE+ ION-IMPLANTATION AND POST AMORPHIZATION/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 222-228
CHARACTERIZATION OF SI SI1-XGEX/SI HETEROSTRUCTURES BY CAPACITANCE-TRANSIENT SPECTROSCOPY/
Authors: BRIGHTEN JC HAWKINS ID PEAKER AR KUBIAK RA PARKER EHC WHALL TE
Citation: Jc. Brighten et al., CHARACTERIZATION OF SI SI1-XGEX/SI HETEROSTRUCTURES BY CAPACITANCE-TRANSIENT SPECTROSCOPY/, Journal of applied physics, 76(7), 1994, pp. 4237-4243
LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPIC STUDIES OF DEFECTS IN SEMICONDUCTORS
Authors: DOBACZEWSKI L KACZOR P HAWKINS ID PEAKER AR
Citation: L. Dobaczewski et al., LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPIC STUDIES OF DEFECTS IN SEMICONDUCTORS, Journal of applied physics, 76(1), 1994, pp. 194-198
SELF-ORGANIZING GROWTH OF ERBIUM ARSENIDE QUANTUM DOTS AND WIRES IN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY
Authors: SINGER KE RUTTER P PEAKER AR WRIGHT AC
Citation: Ke. Singer et al., SELF-ORGANIZING GROWTH OF ERBIUM ARSENIDE QUANTUM DOTS AND WIRES IN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 64(6), 1994, pp. 707-709
THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES AND INTERFACE CHARGE-DENSITIES IN SI SI1-YGEY/SI HETEROJUNCTIONS/
Authors: BRIGHTEN JC HAWKINS ID PEAKER AR KUBIAK RA PARKER EHC WHALL TE
Citation: Jc. Brighten et al., THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES AND INTERFACE CHARGE-DENSITIES IN SI SI1-YGEY/SI HETEROJUNCTIONS/, Semiconductor science and technology, 8(7), 1993, pp. 1487-1489
OPTICAL-PROPERTIES OF DISLOCATIONS IN SILICON-CRYSTALS
Authors: SHRETER YG REBANE YT PEAKER AR
Citation: Yg. Shreter et al., OPTICAL-PROPERTIES OF DISLOCATIONS IN SILICON-CRYSTALS, Physica status solidi. a, Applied research, 138(2), 1993, pp. 681-686
THE IMPACT OF LATTICE DILATION ON DEEP STATES IN MBE GAAS
Authors: POOLE I EFEOGLU H SINGER KE PEAKER AR
Citation: I. Poole et al., THE IMPACT OF LATTICE DILATION ON DEEP STATES IN MBE GAAS, Journal of crystal growth, 127(1-4), 1993, pp. 703-706
THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES IN SI SI1-XGEX/SI HETEROJUNCTIONS BY CAPACITANCE-VOLTAGE TECHNIQUES/
Authors: BRIGHTEN JC HAWKINS ID PEAKER AR PARKER EHC WHALL TE
Citation: Jc. Brighten et al., THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES IN SI SI1-XGEX/SI HETEROJUNCTIONS BY CAPACITANCE-VOLTAGE TECHNIQUES/, Journal of applied physics, 74(3), 1993, pp. 1894-1899
TEMPERATURE-DEPENDENCE OF THE SCHOTTKY-BARRIER IN AL ALGAAS METAL-SEMICONDUCTOR JUNCTIONS/
Authors: REVVA P LANGER JM MISSOUS M PEAKER AR
Citation: P. Revva et al., TEMPERATURE-DEPENDENCE OF THE SCHOTTKY-BARRIER IN AL ALGAAS METAL-SEMICONDUCTOR JUNCTIONS/, Journal of applied physics, 74(1), 1993, pp. 416-425
CORRELATION BETWEEN OPTICAL SPECTROSCOPY AND CAPACITANCE-VOLTAGE PROFILE SIMULATION APPLIED TO INTERFACE STATES IN MULTILAYER GAAS ALGAAS HETEROSTRUCTURES/
Authors: RIMMER JS HAMILTON B DAWSON P MISSOUS M PEAKER AR
Citation: Js. Rimmer et al., CORRELATION BETWEEN OPTICAL SPECTROSCOPY AND CAPACITANCE-VOLTAGE PROFILE SIMULATION APPLIED TO INTERFACE STATES IN MULTILAYER GAAS ALGAAS HETEROSTRUCTURES/, Journal of applied physics, 73(10), 1993, pp. 5032-5037
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