AAAAAA
Results:
1-23
|
Results: 23
Authors:
VOROBKALO FM
GLINCHUK KD
PROKHOROVICH AV
Citation: Fm. Vorobkalo et al., ANALYSIS OF CHANGES IN THE INTENSITY OF INTRINSIC LUMINESCENCE AFTER DIFFUSION OF COPPER INTO SEMIINSULATING UNDOPED GALLIUM-ARSENIDE CRYSTALS, Semiconductors, 32(5), 1998, pp. 509-512
Authors:
GLINCHUK KD
PROKHOROVICH AV
VOROBKALO FM
Citation: Kd. Glinchuk et al., ANALYSIS OF CHANGES IN THE INTENSITY OF THE INTRINSIC LUMINESCENCE AFTER THE COPPER DIFFUSION INTO SEMIINSULATING UNDOPED GAAS CRYSTALS, Crystal research and technology, 33(5), 1998, pp. 833-839
Authors:
VOROBKALO FM
GLINCHUK KD
PROKHOROVICH AV
Citation: Fm. Vorobkalo et al., QUENCHING OF EL2 DEFECT-INDUCED LUMINESCENCE IN GALLIUM-ARSENIDE BY COPPER ATOMS, Semiconductors, 31(9), 1997, pp. 893-895
Authors:
GLINCHUK KD
PROKHOROVICH AV
Citation: Kd. Glinchuk et Av. Prokhorovich, EFFECT OF FAST-NEUTRON IRRADIATION ON THE PHOTOLUMINESCENCE OF N-TYPEGAAS(TE) CRYSTALS, Semiconductors, 31(5), 1997, pp. 449-451
Authors:
GLINCHUK KD
PROKHOROVICH AV
Citation: Kd. Glinchuk et Av. Prokhorovich, INFLUENCE OF FAST-NEUTRON IRRADIATION ON THE INTENSITY OF THE COPPER-RELATED LUMINESCENCE BAND AT H-NU(M)=1.01 EV IN N-TYPE GAAS, Semiconductors, 31(10), 1997, pp. 1006-1007
Authors:
GLINCHUK KD
PROKHOROVICH AV
Citation: Kd. Glinchuk et Av. Prokhorovich, GENERATION OF VGATEASVAS COMPLEXES IN TELLURIUM-DOPED N-TYPE GAAS BY LOW-TEMPERATURE ANNEALING, Crystal research and technology, 32(6), 1997, pp. 837-842
Authors:
GLINCHUK KD
PROKHOROVICH AV
Citation: Kd. Glinchuk et Av. Prokhorovich, EFFECT OF NEUTRON-IRRADIATION AND ANNEALING ON THE INTENSITY OF THE COPPER RELATED 1.01-EV EMISSION BAND IN N-TYPE GAAS, Crystal research and technology, 32(3), 1997, pp. 391-394
Authors:
GLINCHUK KD
GUROSHEV VI
PROKHOROVICH AV
Citation: Kd. Glinchuk et al., SOME CHARACTERISTICS OF ASIZNGA PAIRS INDUCED IN P-TYPE GAAS(ZN) BY RADIATION-THERMAL ACTION, Semiconductors, 30(7), 1996, pp. 642-645
Authors:
GLINCHUK KD
PROKHOROVICH AV
Citation: Kd. Glinchuk et Av. Prokhorovich, KINETICS OF FORMATION AND DISSOCIATION OF RADIATION-PLUS-ANNEALING INDUCED VASZNGA PAIRS IN P-TYPE GAAS(ZN), Semiconductors, 30(11), 1996, pp. 1059-1063
Authors:
GLINCHUK KD
PROKHOROVICH AV
VOROBKALO FM
Citation: Kd. Glinchuk et al., QUENCHING BY COPPER ATOMS OF THE EL2-INDUCED LUMINESCENCE IN GAAS, Crystal research and technology, 31(8), 1996, pp. 1045-1049
Authors:
GLINCHUK KD
PROKHOROVICH AV
Citation: Kd. Glinchuk et Av. Prokhorovich, ELECTRICAL CHARACTERIZATION OF IRRADIATION PLUS ANNEALING-INDUCED VASZNGA PAIRS IN P-TYPE GAAS (ZN) CRYSTALS, Crystal research and technology, 31(3), 1996, pp. 335-342
Authors:
KOVALENKO VF
LITVINOVA MB
PROKHOROVICH AV
SHEPEL LG
Citation: Vf. Kovalenko et al., INHOMOGENEITY OF LUMINESCENCE PROPERTIES OF GALLIUM-ARSENIDE WITH VARIOUS CONCENTRATION OF MAJORITY CARRIERS, Kristallografia, 41(6), 1996, pp. 1063-1065
Authors:
GLINCHUK KD
PROKHOROVICH AV
Citation: Kd. Glinchuk et Av. Prokhorovich, DIFFUSION OF RADIATION-INDUCED INTRINSIC POINT-DEFECTS IN P-GAAS, Kristallografia, 41(2), 1996, pp. 324-327
Authors:
GLINCHUK KD
PROKHOROVICH AV
Citation: Kd. Glinchuk et Av. Prokhorovich, ROLE OF NONSTOICHIOMETRY IN THE DETERMINA TION OF RECOMBINATION ACTIVITY OF DISLOCATIONS IN SEMI-ISOLATING UNALLOYED GAAS CRYSTALS, Pis'ma v Zurnal tehniceskoj fiziki, 21(2), 1995, pp. 16-20
Authors:
GLINCHUK KD
PROKHOROVICH AV
Citation: Kd. Glinchuk et Av. Prokhorovich, ON THE REASONS LEADING TO AN APPEARANCE OF CORRELATED AND ANTICORRELATED DEPENDENCES OF THE MINORITY-CARRIER LIFETIME ON THE DISLOCATION DENSITY IN UNDOPED SEMIINSULATING STOICHIOMETRIC GAAS CRYSTALS, Crystal research and technology, 30(4), 1995, pp. 531-534
Authors:
GLINCHUK KD
PROKHOROVICH AV
Citation: Kd. Glinchuk et Av. Prokhorovich, INFLUENCE OF NONSTOICHIOMETRY ON THE RECOMBINATION ACTIVITY OF DISLOCATIONS IN UNDOPED SEMIINSULATING GAAS CRYSTALS, Crystal research and technology, 30(2), 1995, pp. 201-204
Authors:
GLINCHUK KD
PROKHOROVICH AV
Citation: Kd. Glinchuk et Av. Prokhorovich, ROLE OF NONSTOICHIOMETRY IN THE DETERMINA TION OF DISLOCATION ACTIVITY IN SEMIINSULATING UNDOPED GAAS CRYSTALS, Kristallografia, 40(3), 1995, pp. 560-562
Authors:
GLINCHUK KD
GUROSHEV VI
KLADKO VP
PROKHOROVICH AV
Citation: Kd. Glinchuk et al., ON THE CORRELATION BETWEEN THE INTENSITY DISTRIBUTION OF THE 1.49-EV CARBON LUMINESCENCE BAND AND THE ARSENIC-VACANCY CONCENTRATION IN SEMIINSULATING UNDOPED GAAS CRYSTALS, Kristallografia, 40(1), 1995, pp. 113-116
Authors:
GLINCHUK KD
GUROSHEV VI
PROKHOROVICH AV
Citation: Kd. Glinchuk et al., COMPOSITION DEPENDENCE OF THE RADIATION STABILITY OF THE LUMINESCENCEEMITTED BY SOLID-SOLUTIONS OF III-V COMPOUNDS, Semiconductors, 27(8), 1993, pp. 772-773
Authors:
VINNIK EV
GLINCHUK KD
GUROSHEV VI
PROKHOROVICH AV
Citation: Ev. Vinnik et al., FACTORS RESPONSIBLE FOR THE DIFFERENCE IN THE DOSE DEPENDENCES OF THEINTENSITIES OF DIFFERENT LUMINESCENCE BANDS OF III-V SEMICONDUCTOR COMPOUNDS BOMBARDED WITH FAST PARTICLES, Semiconductors, 27(6), 1993, pp. 560-562
Authors:
GLINCHUK KD
GUROSHEV VI
PROKHOROVICH AV
Citation: Kd. Glinchuk et al., DEPENDENCE OF THE RADIATION STABILITY OF THE INTENSITY OF LUMINESCENCE EMITTED BY SOLID-SOLUTIONS OF III-V COMPOUNDS ON THEIR COMPOSITION, Semiconductors, 27(6), 1993, pp. 586-587
Authors:
VINNIK EV
GLINCHUK KD
GUROSHEV VI
PROKHOROVICH AV
Citation: Ev. Vinnik et al., MECHANISM FOR RADIATION-STIMULATED CHANGES OF THE POSITION OF THE MAXIMUM OF AN IMPURITY LUMINESCENCE BAND OF GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE, Semiconductors, 27(5), 1993, pp. 463-465
Authors:
VINNIK EV
GLINCHUK KD
GUROSHEV VI
PROKHOROVICH AV
Citation: Ev. Vinnik et al., LUMINESCENCE-CENTERS INDUCED IN P-TYPE GAASZN BY RADIATION AND HEAT-TREATMENT, Semiconductors, 27(4), 1993, pp. 338-340
Risultati:
1-23
|