AAAAAA

   
Results: 1-25 | 26-31
Results: 1-25/31
Magneto-photoluminescence studies of Cd(Mn)Se/Zn(Mn)Se diluted magnetic nanostructures
Authors: Toropov, AA Sorokin, SV Kuritsyn, KA Ivanov, SV Pozina, G Bergman, JP Wagner, M Chen, WM Monemar, B Waag, A Yakovlev, DR Sas, C Ossau, W Landwehr, G
Citation: Aa. Toropov et al., Magneto-photoluminescence studies of Cd(Mn)Se/Zn(Mn)Se diluted magnetic nanostructures, PHYSICA E, 10(1-3), 2001, pp. 362-367
Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN
Authors: Goldys, EM Godlewski, M Paskova, T Pozina, G Monemar, B
Citation: Em. Goldys et al., Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN, MRS I J N S, 6(1), 2001, pp. 1-6
Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant
Authors: Pozina, G Bergman, JP Monemar, B Yamaguchi, S Amano, H Akasaki, I
Citation: G. Pozina et al., Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant, MAT SCI E B, 82(1-3), 2001, pp. 137-139
Optical properties of GaNAs/GaAs structures
Authors: Buyanova, IA Chen, WM Pozina, G Hai, PN Monemar, B Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Optical properties of GaNAs/GaAs structures, MAT SCI E B, 82(1-3), 2001, pp. 143-147
Optical characterization of InGaN/GaN MQW structures without in phase separation
Authors: Monemar, B Paskov, PP Pozina, G Paskova, T Bergman, JP Iwaya, M Nitta, S Amano, H Akasaki, I
Citation: B. Monemar et al., Optical characterization of InGaN/GaN MQW structures without in phase separation, PHYS ST S-B, 228(1), 2001, pp. 157-160
Type I band alignment in the GaNxAs1-x/GaAs quantum wells - art. no. 033303
Authors: Buyanova, IA Pozina, G Hai, PN Chen, WM Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Type I band alignment in the GaNxAs1-x/GaAs quantum wells - art. no. 033303, PHYS REV B, 6303(3), 2001, pp. 3303
Time-resolved photoluminescence in strained GaN layers
Authors: Pozina, G Edwards, NV Bergman, JP Monemar, B Bremser, MD Davis, RF
Citation: G. Pozina et al., Time-resolved photoluminescence in strained GaN layers, PHYS ST S-A, 183(1), 2001, pp. 151-155
Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport
Authors: Pozina, G Bergman, JP Monemar, B Iwaya, M Nitta, S Amano, H Akasaki, I
Citation: G. Pozina et al., Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport, J CRYST GR, 230(3-4), 2001, pp. 473-476
Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition
Authors: Pozina, G Edwards, NV Bergman, JP Paskova, T Monemar, B Bremser, MD Davis, RF
Citation: G. Pozina et al., Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition, APPL PHYS L, 78(8), 2001, pp. 1062-1064
Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation
Authors: Duteil, F Du, CX Joelsson, KB Persson, POA Hultman, L Pozina, G Ni, WX Hansson, GV
Citation: F. Duteil et al., Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation, MAT SC S PR, 3(5-6), 2000, pp. 523-528
Light emitting SiGe/i-Si/Si : Er : O tunneling diodes prepared by molecular beam epitaxy
Authors: Ni, WX Du, CX Duteil, F Pozina, G Hansson, GV
Citation: Wx. Ni et al., Light emitting SiGe/i-Si/Si : Er : O tunneling diodes prepared by molecular beam epitaxy, THIN SOL FI, 369(1-2), 2000, pp. 414-418
Multiple peak spectra from InGaN/GaN multiple quantum wells
Authors: Pozina, G Bergman, JP Bonemar, B Takeuchi, T Amano, H Akasaki, I
Citation: G. Pozina et al., Multiple peak spectra from InGaN/GaN multiple quantum wells, PHYS ST S-A, 180(1), 2000, pp. 85-89
MBE growth and properties of bulk BeCdSe alloys and digital (BeSe : CdSe)/ZnSe quantum wells
Authors: Ivanov, SV Toropov, AA Shubina, TV Lebedev, AV Sorokin, SV Sitnikova, AA Kop'ev, PS Reuscher, G Keim, M Bensing, F Waag, A Landwehr, G Pozina, G Bergman, JP Monemar, B
Citation: Sv. Ivanov et al., MBE growth and properties of bulk BeCdSe alloys and digital (BeSe : CdSe)/ZnSe quantum wells, J CRYST GR, 214, 2000, pp. 109-114
Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells
Authors: Pozina, G Bergman, JP Monemar, B Takeuchi, T Amano, H Akasaki, I
Citation: G. Pozina et al., Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells, J APPL PHYS, 88(5), 2000, pp. 2677-2681
Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy
Authors: Buyanova, IA Pozina, G Hai, PN Thinh, NQ Bergman, JP Chen, WM Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy, APPL PHYS L, 77(15), 2000, pp. 2325-2327
InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxywith mass transport
Authors: Pozina, G Bergman, JP Monemar, B Iwaya, M Nitta, S Amano, H Akasaki, I
Citation: G. Pozina et al., InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxywith mass transport, APPL PHYS L, 77(11), 2000, pp. 1638-1640
Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant
Authors: Pozina, G Bergman, JP Monemar, B Yamaguchi, S Amano, H Akasaki, I
Citation: G. Pozina et al., Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant, APPL PHYS L, 76(23), 2000, pp. 3388-3390
Optical and transport properties of CdSe/ZnSe self-organized nanostructures: 1-dimensional versus 3-dimensional quantum confinement
Authors: Toropov, AA Ivanov, SV Shubina, TV Sorokin, SV Lebedev, AV Sitnikova, AA Kop'ev, PS Willander, M Pozina, G Bergman, P Monemar, B
Citation: Aa. Toropov et al., Optical and transport properties of CdSe/ZnSe self-organized nanostructures: 1-dimensional versus 3-dimensional quantum confinement, JPN J A P 1, 38(1B), 1999, pp. 566-569
Effect of Si doping on structural, photoluminescence and electrical properties of GaN
Authors: Shmidt, NM Lebedev, AV Lundin, WV Pushnyi, BV Ratnikov, VV Shubina, TV Tsatsul'nikov, AA Usikov, AS Pozina, G Monemar, B
Citation: Nm. Shmidt et al., Effect of Si doping on structural, photoluminescence and electrical properties of GaN, MAT SCI E B, 59(1-3), 1999, pp. 195-197
Dynamics of the bound excitons in GaN epilayers grown by hydride vapor phase epitaxy
Authors: Pozina, G Bergman, JP Paskova, T Monemar, B
Citation: G. Pozina et al., Dynamics of the bound excitons in GaN epilayers grown by hydride vapor phase epitaxy, PHYS ST S-B, 216(1), 1999, pp. 45-49
Mechanism for light emission in GaNAs/GaAs structures grown by molecular beam epitaxy
Authors: Buyanova, IA Chen, WM Pozina, G Monemar, B Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Mechanism for light emission in GaNAs/GaAs structures grown by molecular beam epitaxy, PHYS ST S-B, 216(1), 1999, pp. 125-129
Optical properties of an AlInN interface layer spontaneously formed in hexagonal InN/sapphire heterostructures
Authors: Shubina, TV Mamutin, VV Vekshin, VA Ratnikov, VV Toropov, AA Sitnikova, AA Ivanov, SV Karlsteen, M Sodervall, U Willander, M Pozina, G Bergman, JP Monemar, B
Citation: Tv. Shubina et al., Optical properties of an AlInN interface layer spontaneously formed in hexagonal InN/sapphire heterostructures, PHYS ST S-B, 216(1), 1999, pp. 205-209
Optical and structural characterization of Ga(In)N three-dimensional nanostructures grown by plasma-assisted molecular beam epitaxy
Authors: Pozina, G Bergman, JP Monemar, B Mamutin, VV Shubina, TV Vekshin, VA Toropov, AA Ivanov, SV Karlsteen, M Willander, M
Citation: G. Pozina et al., Optical and structural characterization of Ga(In)N three-dimensional nanostructures grown by plasma-assisted molecular beam epitaxy, PHYS ST S-B, 216(1), 1999, pp. 445-450
Characteristics of Si delta-layers embedded in GaAs
Authors: Pozina, G Holtz, PO Sernelius, B Buyanov, AV Radamson, HH Madsen, LD Monemar, B Thordson, J Andersson, TG
Citation: G. Pozina et al., Characteristics of Si delta-layers embedded in GaAs, PHYS SCR, T79, 1999, pp. 99-102
Device aspects of Er-doped Si structures for optoelectric interconnect applications
Authors: Ni, WX Du, CX Joelsson, KB Pozina, G Duteil, F Hansson, GV
Citation: Wx. Ni et al., Device aspects of Er-doped Si structures for optoelectric interconnect applications, PHYS SCR, T79, 1999, pp. 143-148
Risultati: 1-25 | 26-31