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Results: 26-50/59
Authors:
RYZHII V
ERSHOV M
Citation: V. Ryzhii et M. Ershov, HOT-ELECTRON EFFECTS IN INFRARED MULTIPLE-QUANTUM-WELL PHOTOTRANSISTOR, JPN J A P 1, 34(2B), 1995, pp. 1257-1259
Authors:
RYZHII V
ERSHOV M
RYZHII M
KHMYROVA I
Citation: V. Ryzhii et al., QUANTUM-WELL INFRARED PHOTODETECTOR WITH OPTICAL OUTPUT, JPN J A P 2, 34(1A), 1995, pp. 38-40
Authors:
RYZHII V
KHMYROVA I
ERSHOV M
RYZHII M
LIZUKA T
Citation: V. Ryzhii et al., THEORETICAL-STUDY OF AN INFRARED-TO-VISIBLE WAVELENGTH QUANTUM-WELL CONVERTER, Semiconductor science and technology, 10(9), 1995, pp. 1272-1276
Authors:
RYZHII V
KHMYROVA I
ERSHOV M
IIZUKA T
Citation: V. Ryzhii et al., THEORY OF AN INTERSUBBAND INFRARED PHOTOTRANSISTOR WITH A NONUNIFORM QUANTUM-WELL, Semiconductor science and technology, 10(7), 1995, pp. 997-1001
Authors:
RYZHII V
ERSHOV M
Citation: V. Ryzhii et M. Ershov, ELECTRICAL AND OPTICAL-PROPERTIES OF A QUANTUM-WELL INFRARED PHOTOTRANSISTOR, Semiconductor science and technology, 10(5), 1995, pp. 687-690
Authors:
ERSHOV M
RYZHII V
Citation: M. Ershov et V. Ryzhii, TEMPERATURE-DEPENDENCE OF THE ELECTRON-IMPACT IONIZATION COEFFICIENT IN SILICON, Semiconductor science and technology, 10(2), 1995, pp. 138-142
Authors:
RYZHII V
ERSHOV M
Citation: V. Ryzhii et M. Ershov, INFRARED MULTIPLE-QUANTUM-WELL PHOTOTRANSISTOR, Solid-state electronics, 38(1), 1995, pp. 149-155
Authors:
ERSHOV M
RYZHII V
SAITO K
Citation: M. Ershov et al., CAPACITANCE-VOLTAGE CHARACTERISTICS OF MULTIPLE-QUANTUM-WELL SEMICONDUCTOR HETEROSTRUCTURES, Journal of physics. D, Applied physics, 28(10), 1995, pp. 2118-2122
Authors:
RYZHII V
ERSHOV M
Citation: V. Ryzhii et M. Ershov, ELECTRON-DENSITY MODULATION EFFECT IN A QUANTUM-WELL INFRARED PHOTOTRANSISTOR, Journal of applied physics, 78(2), 1995, pp. 1214-1218
Authors:
RYZHII V
KHRENOV G
Citation: V. Ryzhii et G. Khrenov, HIGH-FREQUENCY OPERATION OF LATERAL HOT-ELECTRON TRANSISTORS, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 166-171
Authors:
ERSHOV M
RYZHII V
HAMAGUCHI C
Citation: M. Ershov et al., CONTACT AND DISTRIBUTED EFFECTS IN QUANTUM-WELL INFRARED PHOTODETECTORS, Applied physics letters, 67(21), 1995, pp. 3147-3149
Authors:
KHRENOV G
RYZHII V
KARTASHOV S
Citation: G. Khrenov et al., FOURIER ANALYSIS-BASED METHOD FOR HIGH-FREQUENCY PERFORMANCE CALCULATION OF HETEROJUNCTION BIPOLAR-TRANSISTOR, JPN J A P 1, 33(8), 1994, pp. 4550-4554
Authors:
KHRENOV G
RYZHII V
KULKOVA E
Citation: G. Khrenov et al., INFLUENCE OF ELECTRON-SCATTERING ON CURRENT GAIN OF HETEROJUNCTION BIPOLAR-TRANSISTOR OPERATING IN COHERENT REGIME, JPN J A P 1, 33(8), 1994, pp. 4560-4565
Authors:
ERSHOV M
RYZHII V
Citation: M. Ershov et V. Ryzhii, HIGH-FIELD ELECTRON-TRANSPORT IN SIGE ALLOY, JPN J A P 1, 33(3A), 1994, pp. 1365-1371
Authors:
RYZHII V
Citation: V. Ryzhii, INFRARED HOT-ELECTRON PHOTOTRANSISTOR, JPN J A P 1, 33(1A), 1994, pp. 78-82
Authors:
ERSHOV M
RYZHII V
Citation: M. Ershov et V. Ryzhii, MODELING OF ELECTRON INJECTION AND TRANSPORT IN MULTIPLE-QUANTUM-WELLINFRARED PHOTODETECTORS, JPN J A P 2, 34, 1994, pp. 110-112
Authors:
RYZHII V
KHRENOV G
KHMYROVA I
RYZHII M
Citation: V. Ryzhii et al., MODELING OF LATERAL HOT-ELECTRON PHOTOTRANSISTOR FOR LONG-WAVE LENGTHINFRARED RADIATION, JPN J A P 2, 34, 1994, pp. 206-208
Authors:
ZAKHAROVA A
VASKO FT
RYZHII V
Citation: A. Zakharova et al., SPIN ORIENTATION DUE TO LONGITUDINAL CURRENT AND INTERBAND TUNNELING IN NARROW-GAP HETEROSTRUCTURES, Journal of physics. Condensed matter, 6(37), 1994, pp. 7537-7546
Authors:
KHRENOV G
RYZHII V
KARTASHOV S
Citation: G. Khrenov et al., A NUMERICAL-MODEL OF HETEROJUNCTION BIPOLAR-TRANSISTOR HIGH-FREQUENCYPERFORMANCE FOR DEVICE DESIGN, Compel, 13(4), 1994, pp. 671-676
Authors:
RYZHII V
Citation: V. Ryzhii, AN INFRARED LATERAL HOT-ELECTRON PHOTOTRANSISTOR, Semiconductor science and technology, 9(7), 1994, pp. 1391-1394
Authors:
RYZHII V
Citation: V. Ryzhii, THE BISTABILITY EFFECT IN RESONANT-TUNNELING PHOTOTRANSISTORS WITH MULTIPLE-QUANTUM-WELL STRUCTURE, Semiconductor science and technology, 9(6), 1994, pp. 1209-1214
Authors:
KHRENOV G
RYZHII V
KARTASHOV S
Citation: G. Khrenov et al., MONTE-CARLO MODELING OF HOT-ELECTRON RELAXATION IN THE BASE REGION OFALINAS GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Semiconductor science and technology, 9(3), 1994, pp. 329-332
Authors:
RYZHII V
Citation: V. Ryzhii, A BISTABLE RESONANT-TUNNELING HOT-ELECTRON INFRARED PHOTOTRANSISTOR, Semiconductor science and technology, 9(1), 1994, pp. 26-29
Authors:
ZHAKHAROVA A
RYZHII V
PESOTZKII V
Citation: A. Zhakharova et al., SEMICLASSICAL INTERBAND TUNNELING PROBABILITY IN SEMICONDUCTOR HETEROSTRUCTURES, Semiconductor science and technology, 9(1), 1994, pp. 41-48
Authors:
FEDICHKIN L
RYZHII V
VYURKOV V
Citation: L. Fedichkin et al., NOVEL TUNABLE FAR-INFRARED DETECTOR BASED ON A QUANTUM BALLISTIC CHANNEL, Solid-state electronics, 37(4-6), 1994, pp. 1211-1212