ACNP - Italian Periodicals Catalogue

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Results: 1-25 | 26-30

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MONOLITHIC SUPER-BRIGHT RED RESONANT-CAVITY LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY

Authors: JALONEN M KONGAS J TOIVONEN M SAVOLAINEN P SALOKATVE A PESSA M

Citation: M. Jalonen et al., MONOLITHIC SUPER-BRIGHT RED RESONANT-CAVITY LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, IEEE photonics technology letters, 10(7), 1998, pp. 923-925

BLUE-GREEN MICROCAVITY LIGHT-EMITTING DIODE WITH MONOLITHIC MGZNSSE ZNSSE BRAGG REFLECTORS/

Authors: UUSIMAA P SALOKATVE A RAKENNUS K RINTAMOYKKY A PESSA M

Citation: P. Uusimaa et al., BLUE-GREEN MICROCAVITY LIGHT-EMITTING DIODE WITH MONOLITHIC MGZNSSE ZNSSE BRAGG REFLECTORS/, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 18-21

MBE GROWTH OF MONOLITHIC MGZNSSE ZNSSE/CDZNSE MICROCAVITY LED STRUCTURES/

Authors: UUSIMAA P RINTAMOYKKY A ORSILA S SALOKATVE A PESSA M

Citation: P. Uusimaa et al., MBE GROWTH OF MONOLITHIC MGZNSSE ZNSSE/CDZNSE MICROCAVITY LED STRUCTURES/, Journal of crystal growth, 185, 1998, pp. 783-786

MONOLITHIC 1.3-MU-M RESONANT-CAVITY LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY

Authors: JALONEN M KONGAS J TOIVONEN M SAVOLAINEN P ORSILA S SALOKATVE A PESSA M

Citation: M. Jalonen et al., MONOLITHIC 1.3-MU-M RESONANT-CAVITY LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, Electronics Letters, 34(15), 1998, pp. 1519-1520

FABRICATION AND PERFORMANCE OF NOVEL MONOLITHIC GAAS ALGAAS MICROVACUUM TRANSMISSION-MODE PHOTOEMITTERS/

Authors: JALONEN M SALOKATVE A

Citation: M. Jalonen et A. Salokatve, FABRICATION AND PERFORMANCE OF NOVEL MONOLITHIC GAAS ALGAAS MICROVACUUM TRANSMISSION-MODE PHOTOEMITTERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 154-158

MOLECULAR-BEAM EPITAXY OF P-TYPE ZNSSE USING A NITRIC-OXIDE PLASMA SOURCE

Authors: UUSIMAA P RAKENNUS K SALOKATVE A PESSA M LIKONEN J

Citation: P. Uusimaa et al., MOLECULAR-BEAM EPITAXY OF P-TYPE ZNSSE USING A NITRIC-OXIDE PLASMA SOURCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 2426-2427

ALL-SOLID-SOURCE MOLECULAR-BEAM EPITAXY FOR GROWTH OF III-V COMPOUND SEMICONDUCTORS

Authors: PESSA M TOIVONEN M JALONEN M SAVOLAINEN P SALOKATVE A

Citation: M. Pessa et al., ALL-SOLID-SOURCE MOLECULAR-BEAM EPITAXY FOR GROWTH OF III-V COMPOUND SEMICONDUCTORS, Thin solid films, 306(2), 1997, pp. 237-243

BAND OFFSETS AT THE GAINP GAAS HETEROJUNCTION

Authors: LINDELL A PESSA M SALOKATVE A BERNARDINI F NIEMINEN RM PAALANEN M

Citation: A. Lindell et al., BAND OFFSETS AT THE GAINP GAAS HETEROJUNCTION, Journal of applied physics, 82(7), 1997, pp. 3374-3380

OXIDE-CONFINED RESONANT-CAVITY RED LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY

Authors: JALONEN M TOIVONEN M KONGAS J SALOKATVE A PESSA M

Citation: M. Jalonen et al., OXIDE-CONFINED RESONANT-CAVITY RED LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, Electronics Letters, 33(23), 1997, pp. 1989-1990

IDENTIFICATION OF THE NATIVE VACANCY DEFECTS IN BOTH SUBLATTICES OF ZNSXSE1-X BY POSITRON-ANNIHILATION

Authors: SAARINEN K LAINE T SKOG K MAKINEN J HAUTOJARVI P RAKENNUS K UUSIMAA P SALOKATVE A PESSA M

Citation: K. Saarinen et al., IDENTIFICATION OF THE NATIVE VACANCY DEFECTS IN BOTH SUBLATTICES OF ZNSXSE1-X BY POSITRON-ANNIHILATION, Physical review letters, 77(16), 1996, pp. 3407-3410

GROWTH OF II-VI BRAGG MIRRORS BY MOLECULAR-BEAM EPITAXY

Authors: RAKENNUS K UUSIMAA P NAPPI J SALOKATVE A PESSA M AHERNE T DORAN JP OGORMAN J HEGARTY J

Citation: K. Rakennus et al., GROWTH OF II-VI BRAGG MIRRORS BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 159(1-4), 1996, pp. 628-631

OPTICAL-PROPERTIES OF A ZNSSE MICROCAVITY FABRICATED BY EPITAXIAL LIFT-OFF

Authors: AHERNE T BRADLEY AL DORAN JP OGORMAN J HEFFERNAN JF HEGARTY J DENEVE H BRYS C GEENS G VANDAELE P BAETS R DEMEESTER P RAKENNUS K SALOKATVE A UUSIMAA P PESSA M

Citation: T. Aherne et al., OPTICAL-PROPERTIES OF A ZNSSE MICROCAVITY FABRICATED BY EPITAXIAL LIFT-OFF, Journal of crystal growth, 159(1-4), 1996, pp. 636-639

PHYSICS OF GAIN AND STIMULATED-EMISSION IN ZNSE-BASED QUANTUM-WELL LASERS

Authors: DING J KOZLOV V KELKAR P SALOKATVE A NURMIKKO AV

Citation: J. Ding et al., PHYSICS OF GAIN AND STIMULATED-EMISSION IN ZNSE-BASED QUANTUM-WELL LASERS, Physica status solidi. b, Basic research, 188(1), 1995, pp. 153-163

STUDY OF ZNSE-BASED LAYER STRUCTURES FOR BLUE-GREEN LASER-DIODES

Authors: PESSA M RAKENNUS K UUSIMAA P SAVOLAINEN P SALOKATVE A

Citation: M. Pessa et al., STUDY OF ZNSE-BASED LAYER STRUCTURES FOR BLUE-GREEN LASER-DIODES, Physica status solidi. b, Basic research, 187(2), 1995, pp. 337-346

THE DEVELOPMENT OF LOW-VOLTAGE ROOM-TEMPERATURE CONTINUOUS-WAVE LASER-DIODES

Authors: GUNSHOR RL HAN J NURMIKKO AV SALOKATVE A

Citation: Rl. Gunshor et al., THE DEVELOPMENT OF LOW-VOLTAGE ROOM-TEMPERATURE CONTINUOUS-WAVE LASER-DIODES, Journal of crystal growth, 150(1-4), 1995, pp. 790-796

ON DEGRADATION OF ZNSE-BASED BLUE-GREEN DIODE-LASERS

Authors: HOVINEN M DING J SALOKATVE A NURMIKKO AV HUA GC GRILLO DC HE L HAN J RINGLE M GUNSHOR RL

Citation: M. Hovinen et al., ON DEGRADATION OF ZNSE-BASED BLUE-GREEN DIODE-LASERS, Journal of applied physics, 77(8), 1995, pp. 4150-4152

ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF 1.35 MU-M WAVELENGTH STRAINED-LAYER GALNASP QUANTUM-WELL LASER

Authors: TOIVONEN M SALOKATVE A JALONEN M NAPPI J ASONEN H PESSA M MURISON R

Citation: M. Toivonen et al., ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF 1.35 MU-M WAVELENGTH STRAINED-LAYER GALNASP QUANTUM-WELL LASER, Electronics Letters, 31(10), 1995, pp. 797-799

GROWTH AND CHARACTERIZATION OF AN EPITAXIALLY GROWN ZNSSE MNZNSSE DISTRIBUTED-BRAGG-REFLECTOR/

Authors: SALOKATVE A RAKENNUS K UUSIMAA P PESSA M AHERNE T DORAN JP OGORMAN J HEGARTY J

Citation: A. Salokatve et al., GROWTH AND CHARACTERIZATION OF AN EPITAXIALLY GROWN ZNSSE MNZNSSE DISTRIBUTED-BRAGG-REFLECTOR/, Applied physics letters, 67(3), 1995, pp. 407-409

ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF STRAINED-LAYER INGAAS GAINASP/GAINP QUANTUM-WELL LASERS (LAMBDA=980 NM)/

Authors: TOIVONEN M JALONEN M SALOKATVE A NAPPI J SAVOLAINEN P PESSA M ASONEN H

Citation: M. Toivonen et al., ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF STRAINED-LAYER INGAAS GAINASP/GAINP QUANTUM-WELL LASERS (LAMBDA=980 NM)/, Applied physics letters, 67(16), 1995, pp. 2332-2334

MOLECULAR-BEAM EPITAXY GROWTH OF MGZNSSE ZNSSE BRAGG MIRRORS CONTROLLED BY IN-SITU OPTICAL REFLECTOMETRY/

Authors: UUSIMAA P RAKENNUS K SALOKATVE A PESSA M AHERNE T DORAN JP OGORMAN J HEGARTY J

Citation: P. Uusimaa et al., MOLECULAR-BEAM EPITAXY GROWTH OF MGZNSSE ZNSSE BRAGG MIRRORS CONTROLLED BY IN-SITU OPTICAL REFLECTOMETRY/, Applied physics letters, 67(15), 1995, pp. 2197-2199

EPITAXIAL LIFT-OFF OF ZNSE BASED II-VI STRUCTURES

Authors: BRYS C VERMAERKE F DEMEESTER P VANDAELE P RAKENNUS K SALOKATVE A UUSIMAA P PESSA M BRADLEY AL DORAN JP OGORMAN J HEGARTY J

Citation: C. Brys et al., EPITAXIAL LIFT-OFF OF ZNSE BASED II-VI STRUCTURES, Applied physics letters, 66(9), 1995, pp. 1086-1088

ELECTRICAL-PROPERTIES OF BLUE-GREEN DIODE-LASERS

Authors: FAN Y GRILLO DC RINGLE MD HAN J HE L GUNSHOR RL SALOKATVE A JEON H HOVINEN M NURMIKKO AV HUA GC OTSUKA N

Citation: Y. Fan et al., ELECTRICAL-PROPERTIES OF BLUE-GREEN DIODE-LASERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2480-2483

MOLECULAR-BEAM EPITAXY GROWTH OF PSEUDOMORPHIC II-VI MULTILAYERED STRUCTURES FOR BLUE-GREEN LASER-DIODES AND LIGHT-EMITTING-DIODES

Authors: HAN J HE L GRILLO DC CLARK SM GUNSHOR RL JEON H SALOKATVE A NURMIKKO AV HUA GC OTSUKA N

Citation: J. Han et al., MOLECULAR-BEAM EPITAXY GROWTH OF PSEUDOMORPHIC II-VI MULTILAYERED STRUCTURES FOR BLUE-GREEN LASER-DIODES AND LIGHT-EMITTING-DIODES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1254-1257

MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF II-VI BLUE-GREEN LASER-DIODES HAVING CONTINUOUS-WAVE OPERATION AT ROOM-TEMPERATURE

Authors: RINGLE MD GRILLO DC FAN Y HE L HAN J GUNSHOR RL SALOKATVE A JEON H HOVINEN M NURMIKKO AV HUA GC OTSUKA N

Citation: Md. Ringle et al., MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF II-VI BLUE-GREEN LASER-DIODES HAVING CONTINUOUS-WAVE OPERATION AT ROOM-TEMPERATURE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 51-54

RIDGE-WAVE-GUIDE, SEPARATE-CONFINEMENT GREEN-BLUE HETEROSTRUCTURE LASERS

Authors: SALOKATVE A JEON H HOVINEN M KELKAR P NURMIKKO AV GRILLO DC HE L HAN J FAN Y GUNSHOR RL

Citation: A. Salokatve et al., RIDGE-WAVE-GUIDE, SEPARATE-CONFINEMENT GREEN-BLUE HETEROSTRUCTURE LASERS, Journal of crystal growth, 138(1-4), 1994, pp. 1077-1077

Risultati: 1-25 | 26-30