AAAAAA
Results:
1-16
|
Results: 16
Authors:
GREKHOV IV
VEKSLER MI
IVANOV PA
SAMSONOVA TP
SHULEKIN AF
Citation: Iv. Grekhov et al., PHOTOCURRENT AMPLIFICATION IN AU SIO2/N-6H-SIC MOS STRUCTURES WITH A TUNNEL-THIN INSULATOR/, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 1024-1026
Authors:
GREKHOV IV
SHULEKIN AF
VEKSLER MI
Citation: Iv. Grekhov et al., DEGRADATION OF MOS TUNNEL STRUCTURES AT HIGH-CURRENT DENSITY, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 668-672
Authors:
GREKHOV IV
SCHMALZ K
SHULEKIN AF
TITTELBACHHELMRICH K
VEXLER MI
Citation: Iv. Grekhov et al., OPERATION OF A BIPOLAR-TRANSISTOR WITH A TUNNEL MOS EMITTER AND AN INDUCED BASE FROM 4.2 TO 300 K, Cryogenics, 38(6), 1998, pp. 613-618
Authors:
BELOV SV
VEXLER MI
GREKHOV IV
SHULEKIN AF
Citation: Sv. Belov et al., NON-ONE-DIMENSIONAL EFFECTS IN TUNNEL MOS DEVICES, Thin solid films, 294(1-2), 1997, pp. 281-283
Authors:
GREKHOV IV
SHULEKIN AF
VEXLER MI
Citation: Iv. Grekhov et al., DEGRADATION OF TUNNEL-THIN SILICON DIOXIDE FILMS, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2307-2308
Authors:
ALVAREZ JC
VEKSLER MI
GREKHOV IV
SOKOLOV NS
SHULEKIN AF
Citation: Jc. Alvarez et al., ELECTRICAL-PROPERTIES OF AU CAF2/N-SI[111] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY WITH ULTRATHIN (LESS-THAN 20NM) CAF2 LAYERS/, Semiconductors, 30(7), 1996, pp. 698-701
Authors:
BELOV SV
VEKSLER MI
GREKHOV IV
SHULEKIN AF
Citation: Sv. Belov et al., SUPPRESSION OF EMITTER CURRENT CROWDING IN AUGER TRANSISTORS, Semiconductors, 30(10), 1996, pp. 962-966
Authors:
BOLOTOV LN
MAKARENKO IB
TIMKOV AN
VEKSLER MI
GREKHOV IV
SHULEKIN AF
Citation: Ln. Bolotov et al., STM-CONTACT WITH HYDROGEN-PASSIVATED N-TY PE SILICON SURFACE AS THE POINTED AUGER-TRANSISTOR WITH TUNNEL MOS-EMITTER, Fizika tverdogo tela, 38(3), 1996, pp. 889-900
Authors:
BELOV SV
VEKSLER MI
GREKHOV IV
SHULEKIN AF
Citation: Sv. Belov et al., INSTABILITIES OF CURRENT DISTRIBUTION ON SURFACE IN SILICON AUGER-TRANSISTOR WITH TUNNEL MOS-EMITTERS, Pis'ma v Zurnal tehniceskoj fiziki, 22(3), 1996, pp. 42-47
Authors:
GREKHOV IV
SHULEKIN AF
VEKSLER MI
Citation: Iv. Grekhov et al., MECHANISM SHAPING THE STEADY-STATE REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF MIS STRUCTURES WITH CHARGE-TRANSPORT, Semiconductors, 29(2), 1995, pp. 113-115
Authors:
GREKHOV IV
SHULEKIN AF
VEXLER MI
Citation: Iv. Grekhov et al., MEASUREMENT OF THE NEAR-THRESHOLD AUGER IONIZATION PROBABILITY IN SILICON, Journal of physics. Condensed matter, 7(35), 1995, pp. 7037-7043
Authors:
BOLOTOV LN
MAKARENKO IV
SHULEKIN AF
TITKOV AN
Citation: Ln. Bolotov et al., MINORITY-CARRIERS CONTRIBUTION AND HOT-ELECTRON INJECTION PROCESS IN TUNNEL SPECTROSCOPY OF H-PASSIVATED SILICON SURFACES, Surface science, 333, 1995, pp. 468-472
Authors:
GREKHOV IV
SHULEKIN AF
VEXLER MI
Citation: Iv. Grekhov et al., SILICON AUGER TRANSISTOR - NEW INSIGHT INTO THE PERFORMANCE OF A TUNNEL MIS EMITTER TRANSISTOR, Solid-state electronics, 38(8), 1995, pp. 1533-1542
Authors:
ALVARES KK
BERMAN LS
BOREVICH VA
GREKHOV IV
KARIMOV IN
SOKOLOV NS
SHULEKIN AF
Citation: Kk. Alvares et al., VOLTAGE-CAPACITANCE CHARACTERISTICS OF SILICON-(CALCIUM FLUORIDE)-GOLD MIS TUNNEL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductors, 28(2), 1994, pp. 211-212
Authors:
GREKHOV IV
SHULEKIN AF
VEKSLER MI
Citation: Iv. Grekhov et al., STATIC CHARACTERISTICS OF A SILICON AUGER TRANSISTOR WITH A TUNNEL MOS EMITTER AND AN INDUCED BASE, Semiconductors, 27(1), 1993, pp. 46-49
Authors:
GREKHOV IV
SHULEKIN AF
VEXLER MI
Citation: Iv. Grekhov et al., MULTICASCADE IMPACT IONIZATION IN SI METAL-INSULATOR-SEMICONDUCTOR TUNNEL EMITTER AUGER TRANSISTOR (SI MIS TEAT), Solid state communications, 87(4), 1993, pp. 341-343
Risultati:
1-16
|