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Results: 1-25 | 26-50 | 51-71
Results: 1-25/71
THEORETICAL DESCRIPTION OF HIGH-TEMPERATURE IMPLANTATION OF SILICON-CARBIDE WITH N+ AND AL+ IONS
Authors: KULIKOV DV TRUSHIN YV YANKOV RA PEZOLDT J SKORUPA W
Citation: Dv. Kulikov et al., THEORETICAL DESCRIPTION OF HIGH-TEMPERATURE IMPLANTATION OF SILICON-CARBIDE WITH N+ AND AL+ IONS, Technical physics letters, 24(1), 1998, pp. 17-19
SHORT-WAVELENGTH PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH HIGH-DOSES OF SI+, GE+, AND AR+ IONS
Authors: KACHURIN GA TYSCHENKO IE REBOHLE L SKORUPA W YANKOV RA FROEB H BOEHME T LEO K
Citation: Ga. Kachurin et al., SHORT-WAVELENGTH PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH HIGH-DOSES OF SI+, GE+, AND AR+ IONS, Semiconductors, 32(4), 1998, pp. 392-396
POSTIMPLANTATION ANNEALING OF SIC STUDIED BY SLOW-POSITRON SPECTROSCOPIES
Authors: BRAUER G ANWAND W COLEMAN PG STORMER J PLAZAOLA F CAMPILLO JM PACAUD Y SKORUPA W
Citation: G. Brauer et al., POSTIMPLANTATION ANNEALING OF SIC STUDIED BY SLOW-POSITRON SPECTROSCOPIES, Journal of physics. Condensed matter, 10(5), 1998, pp. 1147-1156
SPATIAL-DISTRIBUTION OF DEFECTS IN ION-IMPLANTED AND ANNEALED SI - THE RP 2 EFFECT/
Authors: KOGLER R YANKOV RA KASCHNY JR POSSELT M DANILIN AB SKORUPA W
Citation: R. Kogler et al., SPATIAL-DISTRIBUTION OF DEFECTS IN ION-IMPLANTED AND ANNEALED SI - THE RP 2 EFFECT/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 142(4), 1998, pp. 493-502
NUCLEATION AND GROWTH OF PLATELET BUBBLE STRUCTURES IN HE IMPLANTED SILICON
Authors: FICHTNER PFP KASCHNY JR KLING A TRINKAUS H YANKOV RA MUCKLICH A SKORUPA W ZAWISLAK FC AMARAL L DASILVA MF SOARES JC
Citation: Pfp. Fichtner et al., NUCLEATION AND GROWTH OF PLATELET BUBBLE STRUCTURES IN HE IMPLANTED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 460-464
HELIUM BUBBLES IN SILICON - STUDY OF THE RESIDUAL HELIUM CONTENT USING ELASTIC RECOIL DETECTION ANALYSIS
Authors: KASCHNY JR FICHTNER PFP MUECKLICH A KREISSIG U YANKOV RA SKORUPA W
Citation: Jr. Kaschny et al., HELIUM BUBBLES IN SILICON - STUDY OF THE RESIDUAL HELIUM CONTENT USING ELASTIC RECOIL DETECTION ANALYSIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 583-586
STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGE-IMPLANTED AND SI-IMPLANTED SILICON DIOXIDE
Authors: REBOHLE L VONBORANY J GROTZSCHEL R MARKWITZ A SCHMIDT B TYSCHENKO IE SKORUPA W FROB H LEO K
Citation: L. Rebohle et al., STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGE-IMPLANTED AND SI-IMPLANTED SILICON DIOXIDE, Physica status solidi. a, Applied research, 165(1), 1998, pp. 31-35
IN-SITU LASER REFLECTOMETRY STUDY OF THE AMORPHIZATION OF SILICON-CARBIDE BY MEV ION-IMPLANTATION
Authors: HENKEL T HEERA V KOGLER R SKORUPA W
Citation: T. Henkel et al., IN-SITU LASER REFLECTOMETRY STUDY OF THE AMORPHIZATION OF SILICON-CARBIDE BY MEV ION-IMPLANTATION, Journal of applied physics, 84(6), 1998, pp. 3090-3097
ALUMINUM-IMPLANTATION-INDUCED DEEP LEVELS IN N-TYPE 6H-SIC
Authors: FUNG S GONG M BELING CD BRAUER G WIRTH H SKORUPA W
Citation: S. Fung et al., ALUMINUM-IMPLANTATION-INDUCED DEEP LEVELS IN N-TYPE 6H-SIC, Journal of applied physics, 84(2), 1998, pp. 1152-1154
ENHANCEMENT OF THE INTENSITY OF THE SHORT-WAVELENGTH VISIBLE PHOTOLUMINESCENCE FROM SILICON-IMPLANTED SILICON-DIOXIDE FILMS CAUSED BY HYDROSTATIC-PRESSURE DURING ANNEALING
Authors: TYSCHENKO IE REBOHLE L YANKOV RA SKORUPA W MISIUK A
Citation: Ie. Tyschenko et al., ENHANCEMENT OF THE INTENSITY OF THE SHORT-WAVELENGTH VISIBLE PHOTOLUMINESCENCE FROM SILICON-IMPLANTED SILICON-DIOXIDE FILMS CAUSED BY HYDROSTATIC-PRESSURE DURING ANNEALING, Applied physics letters, 73(10), 1998, pp. 1418-1420
DEEP-LEVEL TRAPS IN THE EXTENDED TAIL REGION OF BORON-IMPLANTED N-TYPE 6H-SIC
Authors: GONG M REDDY CV BELING CD FUNG S BRAUER G WIRTH H SKORUPA W
Citation: M. Gong et al., DEEP-LEVEL TRAPS IN THE EXTENDED TAIL REGION OF BORON-IMPLANTED N-TYPE 6H-SIC, Applied physics letters, 72(21), 1998, pp. 2739-2741
HIGH-TEMPERATURE HIGH-DOSE IMPLANTATION OF N-SIC( AND AL+ IONS IN 6H)
Authors: YANKOV RA VOELSKOW M KREISSIG W KULIKOV DV PEZOLDT J SKORUPA W TRUSHIN YV KHARLAMOV VS TSIGANKOV DN
Citation: Ra. Yankov et al., HIGH-TEMPERATURE HIGH-DOSE IMPLANTATION OF N-SIC( AND AL+ IONS IN 6H), Technical physics letters, 23(8), 1997, pp. 617-620
PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH SI+ IONS AND ANNEALEDIN A PULSED REGIME
Authors: KACHURIN GA TYSCHENKO IE ZHURAVLEV KS PAZDNIKOV NA VOLODIN VA GUTAKOVSKII AK LEIER AF SKORUPA W YANKOV RA
Citation: Ga. Kachurin et al., PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH SI+ IONS AND ANNEALEDIN A PULSED REGIME, Semiconductors, 31(6), 1997, pp. 626-630
PROTON IRRADIATION EFFECTS IN SILICON JUNCTION DIODES AND CHARGE-COUPLED-DEVICES
Authors: SIMOEN E VANHELLEMONT J ALAERTS A CLAEYS C GAUBAS E KANIAVA A OHYAMA H SUNAGA H NAHSIYAMA I SKORUPA W
Citation: E. Simoen et al., PROTON IRRADIATION EFFECTS IN SILICON JUNCTION DIODES AND CHARGE-COUPLED-DEVICES, Radiation physics and chemistry, 50(5), 1997, pp. 417-422
ALUMINUM IMPLANTATION OF P-SIC FOR OHMIC CONTACTS
Authors: SPIESS L NENNEWITZ O WEISHART H LINDNER J SKORUPA W ROMANUS H ERLER F PEZOLDT J
Citation: L. Spiess et al., ALUMINUM IMPLANTATION OF P-SIC FOR OHMIC CONTACTS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1414-1419
ION-BEAM-ASSISTED DEPOSITION OF A TUNGSTEN COMPOUND LAYER ON 6H-SILICON CARBIDE
Authors: WEISHART H HEERA V MATZ W SKORUPA W
Citation: H. Weishart et al., ION-BEAM-ASSISTED DEPOSITION OF A TUNGSTEN COMPOUND LAYER ON 6H-SILICON CARBIDE, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1432-1435
INVESTIGATION OF THE EFFECTS OF HIGH-TEMPERATURE IMPLANTATION AND POST IMPLANTATION ANNEALING ON THE ELECTRICAL BEHAVIOR OF NITROGEN-IMPLANTED BETA-SIC FILMS
Authors: REICHERT W LOSSY R SIRGO MG OBERMEIER E SKORUPA W
Citation: W. Reichert et al., INVESTIGATION OF THE EFFECTS OF HIGH-TEMPERATURE IMPLANTATION AND POST IMPLANTATION ANNEALING ON THE ELECTRICAL BEHAVIOR OF NITROGEN-IMPLANTED BETA-SIC FILMS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1445-1447
DOPING OF 3C-SIC BY IMPLANTATION OF NITROGEN AT HIGH-TEMPERATURES
Authors: LOSSY R REICHERT W OBERMEIER E SKORUPA W
Citation: R. Lossy et al., DOPING OF 3C-SIC BY IMPLANTATION OF NITROGEN AT HIGH-TEMPERATURES, Journal of electronic materials, 26(3), 1997, pp. 123-127
AN EPR STUDY OF DEFECTS INDUCED IN 6H-SIC BY ION-IMPLANTATION
Authors: BARKLIE RC COLLINS M HOLM B PACAUD Y SKORUPA W
Citation: Rc. Barklie et al., AN EPR STUDY OF DEFECTS INDUCED IN 6H-SIC BY ION-IMPLANTATION, Journal of electronic materials, 26(3), 1997, pp. 137-143
XTEM ANALYSIS OF GE NANOCLUSTERS IN THIN SIO2 LAYERS
Authors: MARKWITZ A MUCKLICH A VONBORANY J MATZ W SKORUPA W SCHMIDT B MOLLER W
Citation: A. Markwitz et al., XTEM ANALYSIS OF GE NANOCLUSTERS IN THIN SIO2 LAYERS, European journal of cell biology, 74, 1997, pp. 122-122
EXPERIMENTAL-DETERMINATION OF POSITRONIC AND ELECTRONIC CHARACTERISTICS OF 3C-SIC
Authors: BRAUER G ANWAND W NICHT EM COLEMAN PG WAGNER N WIRTH H SKORUPA W
Citation: G. Brauer et al., EXPERIMENTAL-DETERMINATION OF POSITRONIC AND ELECTRONIC CHARACTERISTICS OF 3C-SIC, Applied surface science, 116, 1997, pp. 19-22
INFLUENCE OF THE ION IRRADIATION ON THE PROPERTIES OF BETA-FESI2 LAYERS PREPARED BY ION-BEAM-ASSISTED DEPOSITION
Authors: BARRADAS NP PANKNIN D WIESER E SCHMIDT B BETZL M MUCKLICH A SKORUPA W
Citation: Np. Barradas et al., INFLUENCE OF THE ION IRRADIATION ON THE PROPERTIES OF BETA-FESI2 LAYERS PREPARED BY ION-BEAM-ASSISTED DEPOSITION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 316-320
ANNEALING EFFECTS IN LIGHT-EMITTING SI NANOSTRUCTURES FORMED IN SIO2 BY ION-IMPLANTATION AND TRANSIENT PREHEATING
Authors: KACHURIN GA ZHURAVLEV KS PAZDNIKOV NA LEIER AF TYSCHENKO IE VOLODIN VA SKORUPA W YANKOV RA
Citation: Ga. Kachurin et al., ANNEALING EFFECTS IN LIGHT-EMITTING SI NANOSTRUCTURES FORMED IN SIO2 BY ION-IMPLANTATION AND TRANSIENT PREHEATING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 583-586
VISIBLE AND NEAR-INFRARED LUMINESCENCE FROM SILICON NANOSTRUCTURES FORMED BY ION-IMPLANTATION AND PULSE ANNEALING
Authors: KACHURIN GA TYSCHENKO IE ZHURAVLEV KS PAZDNIKOV NA VOLODIN VA GUTAKOVSKY AK LEIER AF SKORUPA W YANKOV RA
Citation: Ga. Kachurin et al., VISIBLE AND NEAR-INFRARED LUMINESCENCE FROM SILICON NANOSTRUCTURES FORMED BY ION-IMPLANTATION AND PULSE ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(3), 1997, pp. 571-574
BLUE AND VIOLET PHOTOLUMINESCENCE FROM HIGH-DOSE SI-IMPLANTED AND GE+-IMPLANTED SILICON DIOXIDE LAYERS()
Authors: REBOHLE L TYSCHENKO IE FROB H LEO K YANKOV RA VONBORANY J KACHURIN GA SKORUPA W
Citation: L. Rebohle et al., BLUE AND VIOLET PHOTOLUMINESCENCE FROM HIGH-DOSE SI-IMPLANTED AND GE+-IMPLANTED SILICON DIOXIDE LAYERS(), Microelectronic engineering, 36(1-4), 1997, pp. 107-110
Risultati: 1-25 | 26-50 | 51-71