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Results: 1-25 | 26-29
Results: 1-25/29
A hydrogen-transport-based interface-trap-generation model for hot-carriesreliability prediction
Authors: Pagey, MP Schrimpf, RD Galloway, KF Nicklaw, CJ Ikeda, S Kamohara, S
Citation: Mp. Pagey et al., A hydrogen-transport-based interface-trap-generation model for hot-carriesreliability prediction, IEEE ELEC D, 22(6), 2001, pp. 290-292
Defect generation by hydrogen at the Si-SiO2 interface - art. no. 165506
Authors: Rashkeev, SN Fleetwood, DM Schrimpf, RD Pantelides, ST
Citation: Sn. Rashkeev et al., Defect generation by hydrogen at the Si-SiO2 interface - art. no. 165506, PHYS REV L, 8716(16), 2001, pp. 5506
Thermal modeling of single event burnout failure in semiconductor power devices
Authors: Walker, DG Fisher, TS Liu, J Schrimpf, RD
Citation: Dg. Walker et al., Thermal modeling of single event burnout failure in semiconductor power devices, MICROEL REL, 41(4), 2001, pp. 571-578
A generalized model for the lifetime of microelectronic components, applied to storage conditions
Authors: Wise, LJ Schrimpf, RD Parks, HG Galloway, KF
Citation: Lj. Wise et al., A generalized model for the lifetime of microelectronic components, applied to storage conditions, MICROEL REL, 41(2), 2001, pp. 317-322
Prediction of the one-year thermal annealing of irradiated commercial devices based on experimental isochronal curves
Authors: Saigne, F Dusseau, L Fesquet, J Gasiot, J Ecoffet, R Schrimpf, RD Galloway, KF
Citation: F. Saigne et al., Prediction of the one-year thermal annealing of irradiated commercial devices based on experimental isochronal curves, IEEE NUCL S, 47(6), 2000, pp. 2244-2248
Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation
Authors: Marka, Z Singh, SK Wang, W Lee, SC Kavich, J Glebov, B Rashkeev, SN Karmarkar, AP Albridge, RG Pantelides, ST Schrimpf, RD Fleetwood, DM Tolk, NH
Citation: Z. Marka et al., Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation, IEEE NUCL S, 47(6), 2000, pp. 2256-2261
Reactions of hydrogen with Si-SiO2 interfaces
Authors: Pantelides, ST Rashkeev, SN Buczko, R Fleetwood, DM Schrimpf, RD
Citation: St. Pantelides et al., Reactions of hydrogen with Si-SiO2 interfaces, IEEE NUCL S, 47(6), 2000, pp. 2262-2268
Defects and nanocrystals generated by Si implantation into a-SiO2
Authors: Nicklaw, CJ Pagey, MP Pantelides, ST Fleetwood, DM Schrimpf, RD Galloway, KF Wittig, JE Howard, BM Taw, E McNeil, WH Conley, JF
Citation: Cj. Nicklaw et al., Defects and nanocrystals generated by Si implantation into a-SiO2, IEEE NUCL S, 47(6), 2000, pp. 2269-2275
Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation
Authors: White, BD Brillson, LJ Lee, SC Fleetwood, DM Schrimpf, RD Pantelides, ST Lee, YM Lucovsky, G
Citation: Bd. White et al., Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation, IEEE NUCL S, 47(6), 2000, pp. 2276-2280
Hydrogen-related defects in irradiated SiO2
Authors: Bunson, PE Di Ventra, M Pantelides, ST Fleetwood, DM Schrimpf, RD
Citation: Pe. Bunson et al., Hydrogen-related defects in irradiated SiO2, IEEE NUCL S, 47(6), 2000, pp. 2289-2296
Total dose effects in composite nitride-oxide films
Authors: Lee, SC Raparla, A Li, YF Gasiot, G Schrimpf, RD Fleetwood, DM Galloway, KF Featherby, M Johnson, D
Citation: Sc. Lee et al., Total dose effects in composite nitride-oxide films, IEEE NUCL S, 47(6), 2000, pp. 2297-2304
Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs
Authors: Saigne, F Fesquet, J Gasiot, J Ecoffet, R Schrimpf, RD Galloway, KF
Citation: F. Saigne et al., Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs, IEEE NUCL S, 47(6), 2000, pp. 2329-2333
Origins of total-dose response variability in linear bipolar microcircuits
Authors: Barnaby, HJ Cirba, CR Schrimpf, RD Fleetwood, DM Pease, RL Shaneyfelt, MR Turflinger, T Krieg, JF Maher, MC
Citation: Hj. Barnaby et al., Origins of total-dose response variability in linear bipolar microcircuits, IEEE NUCL S, 47(6), 2000, pp. 2342-2349
Analysis of single-event transients in analog circuits
Authors: Adell, P Schrimpf, RD Barnaby, HJ Marec, R Chatry, C Calvel, P Barillot, C Mion, O
Citation: P. Adell et al., Analysis of single-event transients in analog circuits, IEEE NUCL S, 47(6), 2000, pp. 2616-2623
Modeling BJT radiation response with non-uniform energy distributions of interface traps
Authors: Barnaby, HJ Cirba, C Schrimpf, RD Kosier, SL Fouillat, P Montagner, X
Citation: Hj. Barnaby et al., Modeling BJT radiation response with non-uniform energy distributions of interface traps, IEEE NUCL S, 47(3), 2000, pp. 514-518
Annealing behavior of a proton irradiated AlxGa1-xN/GaN high electron mobility transistor grown by MBE
Authors: Cai, SJ Tang, YS Li, R Wei, YY Wong, L Chen, YL Wang, KL Chen, M Zhao, YF Schrimpf, RD Keay, JC Galloway, KF
Citation: Sj. Cai et al., Annealing behavior of a proton irradiated AlxGa1-xN/GaN high electron mobility transistor grown by MBE, IEEE DEVICE, 47(2), 2000, pp. 304-307
Ab initio calculations of H+ energetics in SiO2: Implications for transport
Authors: Bunson, PE Di Ventra, M Pantelides, ST Schrimpf, RD Galloway, KF
Citation: Pe. Bunson et al., Ab initio calculations of H+ energetics in SiO2: Implications for transport, IEEE NUCL S, 46(6), 1999, pp. 1568-1573
Minimizing gain degradation in lateral PNP bipolar junction transistors using gate control
Authors: Barnaby, HJ Cirba, C Schrimpf, RD Kosier, S Fouillat, P Montagner, X
Citation: Hj. Barnaby et al., Minimizing gain degradation in lateral PNP bipolar junction transistors using gate control, IEEE NUCL S, 46(6), 1999, pp. 1652-1659
Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response
Authors: Barnaby, HJ Schrimpf, RD Pease, RL Cole, P Turflinger, T Krieg, J Titus, J Emily, D Gehlhausen, M Witczak, SC Maher, MC Van Nort, D
Citation: Hj. Barnaby et al., Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response, IEEE NUCL S, 46(6), 1999, pp. 1666-1673
Comparison of lifetime and threshold current damage factors for multi-quantum-well (MQW) GaAs/GaAlAs laser diodes irradiated at different proton energies
Authors: Lee, SC Zhao, YF Schrimpf, RD Neifeld, MA Galloway, KF
Citation: Sc. Lee et al., Comparison of lifetime and threshold current damage factors for multi-quantum-well (MQW) GaAs/GaAlAs laser diodes irradiated at different proton energies, IEEE NUCL S, 46(6), 1999, pp. 1797-1803
Light emission studies of total dose and hot carrier effects on silicon junctions
Authors: Kerns, S Jiang, D de la Bardonnie, M Pelanchon, F Barnaby, H Kerns, DV Schrimpf, RD Bhuva, BL Mialhe, P Hoffmann, A Charles, JP
Citation: S. Kerns et al., Light emission studies of total dose and hot carrier effects on silicon junctions, IEEE NUCL S, 46(6), 1999, pp. 1804-1808
Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides
Authors: Youk, GU Khare, PS Schrimpf, RD Massengill, LW Galloway, KF
Citation: Gu. Youk et al., Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides, IEEE NUCL S, 46(6), 1999, pp. 1830-1835
Total dose effects on power-MOSFET switching converters
Authors: Pizano, JE Ma, TH Attia, JO Schrimpf, RD Galloway, KF Witulski, AF
Citation: Je. Pizano et al., Total dose effects on power-MOSFET switching converters, MICROEL REL, 38(12), 1998, pp. 1935-1939
Space charge limited degradation of bipolar oxides at low electric fields
Authors: Witczak, SC Lacoe, RC Mayer, DC Fleetwood, DM Schrimpf, RD Galloway, KF
Citation: Sc. Witczak et al., Space charge limited degradation of bipolar oxides at low electric fields, IEEE NUCL S, 45(6), 1998, pp. 2339-2351
Modeling low-dose-rate effects in irradiated bipolar-base oxides
Authors: Graves, RJ Cirba, CR Schrimpf, RD Milanowski, RJ Michez, A Fleetwood, DM Witczak, SC Saigne, F
Citation: Rj. Graves et al., Modeling low-dose-rate effects in irradiated bipolar-base oxides, IEEE NUCL S, 45(6), 1998, pp. 2352-2360
Risultati: 1-25 | 26-29