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Results: 1-25/35
Authors:
Gritsch, M
Kosina, H
Grasser, T
Selberherr, S
Citation: M. Gritsch et al., Influence of generation/recombination effects in simulations of partially depleted SOI MOSFETs, SOL ST ELEC, 45(4), 2001, pp. 621-627
Authors:
Sabelka, R
Selberherr, S
Citation: R. Sabelka et S. Selberherr, A finite element simulator for three-dimensional analysis of interconnect structures, MICROELEC J, 32(2), 2001, pp. 163-171
Authors:
Grasser, T
Kosina, H
Gritsch, M
Selberherr, S
Citation: T. Grasser et al., Using six moments of Boltzmann's transport equation for device simulation, J APPL PHYS, 90(5), 2001, pp. 2389-2396
Authors:
Grasser, T
Kosina, H
Selberherr, S
Citation: T. Grasser et al., Influence of the distribution function shape and the band structure on impact ionization modeling, J APPL PHYS, 90(12), 2001, pp. 6165-6171
Authors:
Grasser, T
Selberherr, S
Citation: T. Grasser et S. Selberherr, Fully coupled electrothermal mixed-mode device simulation of SiGeHBT circuits, IEEE DEVICE, 48(7), 2001, pp. 1421-1427
Authors:
Palankovski, V
Schultheis, R
Selberherr, S
Citation: V. Palankovski et al., Simulation of power heterojunction bipolar transistors on gallium arsenide, IEEE DEVICE, 48(6), 2001, pp. 1264-1269
Authors:
Quay, R
Hess, K
Reuter, R
Schlechtweg, M
Grave, T
Palankovski, V
Selberherr, S
Citation: R. Quay et al., Nonlinear electronic transport and device performance of HEMTs, IEEE DEVICE, 48(2), 2001, pp. 210-217
Authors:
Dragosits, K
Selberherr, S
Citation: K. Dragosits et S. Selberherr, Two-dimensional simulation of ferroelectric memory cells, IEEE DEVICE, 48(2), 2001, pp. 316-322
Authors:
Palankovski, V
Belova, N
Grasser, T
Puchner, H
Aronowitz, S
Selberherr, S
Citation: V. Palankovski et al., A methodology for deep sub-0.25 mu m CMOS technology prediction, IEEE DEVICE, 48(10), 2001, pp. 2331-2336
Authors:
Palankovski, V
Quay, R
Selberherr, S
Citation: V. Palankovski et al., Industrial application of heterostructure device simulation, IEEE J SOLI, 36(9), 2001, pp. 1365-1370
Authors:
Grasser, T
Kosina, H
Selberherr, S
Citation: T. Grasser et al., Investigation of spurious velocity overshoot using Monte Carlo data, APPL PHYS L, 79(12), 2001, pp. 1900-1902
Authors:
Quay, R
Moglestue, C
Palankovski, V
Selberherr, S
Citation: R. Quay et al., A temperature dependent model for the saturation velocity in semiconductormaterials, MAT SC S PR, 3(1-2), 2000, pp. 149-155
Authors:
Nedjalkov, M
Kosina, H
Selberherr, S
Citation: M. Nedjalkov et al., A Monte-Carlo method to analyze the small signal response of the semiconductor carriers, IEICE TR EL, E83C(8), 2000, pp. 1218-1223
Authors:
Burenkov, A
Tietzel, K
Hossinger, A
Lorenz, J
Ryssel, H
Selberherr, S
Citation: A. Burenkov et al., A computationally efficient method for three-dimensional simulation of ionimplantation, IEICE TR EL, E83C(8), 2000, pp. 1259-1266
Authors:
Strasser, R
Selberherr, S
Citation: R. Strasser et S. Selberherr, Practical inverse modeling with SIESTA, IEICE TR EL, E83C(8), 2000, pp. 1303-1310
Authors:
Hossinger, A
Langer, E
Selberherr, S
Citation: A. Hossinger et al., Parallelization of a Monte Carlo ion implantation simulator, IEEE COMP A, 19(5), 2000, pp. 560-567
Authors:
Kosik, R
Fleischmann, P
Haindl, B
Pietra, P
Selberherr, S
Citation: R. Kosik et al., On the interplay between meshing and discretization in three-dimensional diffusion simulation, IEEE COMP A, 19(11), 2000, pp. 1233-1240
Authors:
Pyka, W
Kirchauer, H
Selberherr, S
Citation: W. Pyka et al., Three-dimensional resist development simulation - Benchmarks and integration with lithography, MICROEL ENG, 53(1-4), 2000, pp. 449-452
Authors:
Knaipp, M
Kanert, W
Selberherr, S
Citation: M. Knaipp et al., Hydrodynamic modeling of avalanche breakdown in a gate overvoltage protection structure, SOL ST ELEC, 44(7), 2000, pp. 1135-1143
Authors:
Grasser, T
Selberherr, S
Citation: T. Grasser et S. Selberherr, Mixed-mode device simulation, MICROELEC J, 31(11-12), 2000, pp. 873-881
Authors:
Kosina, H
Nedjalkov, M
Selberherr, S
Citation: H. Kosina et al., A Monte Carlo method for small signal analysis of the Boltzmann equation, J APPL PHYS, 87(9), 2000, pp. 4308-4314
Authors:
Kosina, H
Nedjalkov, M
Selberherr, S
Citation: H. Kosina et al., Theory of the Monte Carlo method for semiconductor device simulation, IEEE DEVICE, 47(10), 2000, pp. 1898-1908
Authors:
Brech, H
Grave, T
Selberherr, S
Citation: H. Brech et al., Development of global calibration for accurate GaAs-PHEMT simulation, IEEE DEVICE, 47(10), 2000, pp. 1957-1964
Authors:
Palankovski, V
Kaiblinger-Grujin, G
Selberherr, S
Citation: V. Palankovski et al., Study of dopant-dependent band gap narrowing in compound semiconductor devices, MAT SCI E B, 66(1-3), 1999, pp. 46-49
Authors:
Fleischmann, P
Pyka, W
Selberherr, S
Citation: P. Fleischmann et al., Mesh generation for application in technology CAD, IEICE TR EL, E82C(6), 1999, pp. 937-947