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Results:
1-17
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Results: 17
Authors:
Spinelli, AS
Pacelli, A
Lacaita, AL
Citation: As. Spinelli et al., An improved formula for the determination of the polysilicon doping, IEEE ELEC D, 22(6), 2001, pp. 281-283
Authors:
Ielmini, D
Spinelli, AS
Lacaita, AL
Modelli, A
Citation: D. Ielmini et al., A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories, MICROEL ENG, 59(1-4), 2001, pp. 189-195
Authors:
Ielmini, D
Spinelli, AS
Lacaita, AL
Martinelli, A
Ghidini, G
Citation: D. Ielmini et al., A recombination- and trap-assisted tunneling model for stress-induced leakage current, SOL ST ELEC, 45(8), 2001, pp. 1361-1369
Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm)
Authors:
Clerc, R
Spinelli, AS
Ghibaudo, G
Leroux, C
Pananakakis, G
Citation: R. Clerc et al., Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm), MICROEL REL, 41(7), 2001, pp. 1027-1030
Authors:
Ielmini, D
Spinelli, AS
Beretta, M
Lacaita, AL
Citation: D. Ielmini et al., Different types of defects in silicon dioxide characterized by their transient behavior, J APPL PHYS, 89(7), 2001, pp. 4189-4191
Authors:
Ielmini, D
Spinelli, AS
Lacaita, AL
DiMaria, DJ
Ghidini, G
Citation: D. Ielmini et al., A detailed investigation of the quantum yield experiment, IEEE DEVICE, 48(8), 2001, pp. 1696-1702
Authors:
Spinelli, AS
Pacelli, A
Lacaita, AL
Citation: As. Spinelli et al., Polysilicon quantization effects on the electrical properties of MOS transistors (vol 47, pg 2266, 2000.), IEEE DEVICE, 48(3), 2001, pp. 609-609
Authors:
Ielmini, D
Spinelli, AS
Lacaita, AL
Martinelli, A
Ghidini, G
Citation: D. Ielmini et al., A recombination model for transient and stationary stress-induced leakage current, MICROEL REL, 40(4-5), 2000, pp. 703-706
Authors:
Ielmini, D
Spinelli, AS
Rigamonti, MA
Lacaita, AL
Citation: D. Ielmini et al., Modeling of SILC based on electron and hole tunneling - Part I: Transient effects, IEEE DEVICE, 47(6), 2000, pp. 1258-1265
Authors:
Ielmini, D
Spinelli, AS
Rigamonti, MA
Lacaita, AL
Citation: D. Ielmini et al., Modeling of SILC based on electron and hole tunneling - Part II: Steady-state, IEEE DEVICE, 47(6), 2000, pp. 1266-1272
Authors:
Spinelli, AS
Pacelli, A
Lacaita, AL
Citation: As. Spinelli et al., Polysilicon quantization effects on the electrical properties of MOS transistors, IEEE DEVICE, 47(12), 2000, pp. 2366-2371
Authors:
Ielmini, D
Spinelli, AS
Lacaita, AL
Citation: D. Ielmini et al., Experimental evidence for recombination-assisted leakage in thin oxides, APPL PHYS L, 76(13), 2000, pp. 1719-1721
Authors:
Spinelli, AS
Benvenuti, A
Villa, S
Lacaita, AL
Citation: As. Spinelli et al., MOSFET simulation with quantum effects and nonlocal mobility model, IEEE ELEC D, 20(6), 1999, pp. 298-300
Authors:
Spinelli, AS
Lacaita, AL
Rigamonti, M
Ghidini, G
Citation: As. Spinelli et al., Experimental method for the determination of the energy distribution of stress-induced oxide traps, IEEE ELEC D, 20(3), 1999, pp. 106-108
Authors:
Spinelli, AS
Lacaita, AL
Rigamonti, M
Ielmini, D
Ghidini, G
Citation: As. Spinelli et al., Separation of electron and hole traps by transient current analysis, MICROEL ENG, 48(1-4), 1999, pp. 151-154
Authors:
Spinelli, AS
Lacaita, AL
Minelli, D
Ghidini, G
Citation: As. Spinelli et al., Analysis of space and energy distribution of stress-induced oxide traps, MICROEL REL, 39(2), 1999, pp. 215-219
Authors:
Pacelli, A
Spinelli, AS
Perron, LM
Citation: A. Pacelli et al., Carrier quantization at flat bands in MOS devices, IEEE DEVICE, 46(2), 1999, pp. 383-387
Risultati:
1-17
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