AAAAAA

   
Results: 1-25 | 26-41
Results: 1-25/41
Breakdown of the phonon bottleneck effect in self-assembled quantum dots
Authors: Masumoto, Y Ignatiev, IV Kozin, IE Davydov, VG Nair, SV Ren, HW Lee, JS Sugou, S
Citation: Y. Masumoto et al., Breakdown of the phonon bottleneck effect in self-assembled quantum dots, JPN J A P 1, 40(3B), 2001, pp. 1947-1950
Optical study of strain-induced GaAs quantum dots
Authors: Nishibayashi, K Okuno, T Mishina, T Sugou, S Ren, HW Masumoto, Y
Citation: K. Nishibayashi et al., Optical study of strain-induced GaAs quantum dots, JPN J A P 1, 40(3B), 2001, pp. 2084-2086
Quantum beats in photoluminescence of InP quantum dots in electric field
Authors: Davydov, V Fedorov, AV Ignatiev, IV Kozin, IE Ren, HW Sugisaki, M Sugou, S Masumoto, Y
Citation: V. Davydov et al., Quantum beats in photoluminescence of InP quantum dots in electric field, PHYS ST S-B, 224(2), 2001, pp. 425-429
Coherent control of stress-induced InGaAs quantum dots by means of phonon-assisted resonant photoluminescence
Authors: Baranov, AV Davydov, V Fedorov, AV Ren, HW Sugou, S Masumoto, Y
Citation: Av. Baranov et al., Coherent control of stress-induced InGaAs quantum dots by means of phonon-assisted resonant photoluminescence, PHYS ST S-B, 224(2), 2001, pp. 461-464
Carrier relaxation dynamics in self-assembled quantum dots studied by artificial control of nonradiative losses
Authors: Davydov, V Ignatiev, IV Kozin, IE Nair, SV Lee, JS Ren, HW Sugou, S Masumoto, Y
Citation: V. Davydov et al., Carrier relaxation dynamics in self-assembled quantum dots studied by artificial control of nonradiative losses, PHYS ST S-B, 224(2), 2001, pp. 493-496
Continuous-wave operation of 1.30 mu m GaAsSb/GaAs VCSELs
Authors: Anan, T Yamada, M Nishi, K Kurihara, K Tokutome, K Kamei, A Sugou, S
Citation: T. Anan et al., Continuous-wave operation of 1.30 mu m GaAsSb/GaAs VCSELs, ELECTR LETT, 37(9), 2001, pp. 566-567
Low chirp operation in 1.6 mu m quantum dot laser under 2.5 GHz direct modulation
Authors: Saito, H Nishi, K Sugou, S
Citation: H. Saito et al., Low chirp operation in 1.6 mu m quantum dot laser under 2.5 GHz direct modulation, ELECTR LETT, 37(21), 2001, pp. 1293-1295
Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates
Authors: Saito, H Nishi, K Sugou, S
Citation: H. Saito et al., Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates, APPL PHYS L, 78(3), 2001, pp. 267-269
Low-threshold operation of 1.3-mu m GaAsSb quantum-well lasers directly grown on GaAs substrates
Authors: Yamada, M Anan, T Tokutome, K Kamei, A Nishi, K Sugou, S
Citation: M. Yamada et al., Low-threshold operation of 1.3-mu m GaAsSb quantum-well lasers directly grown on GaAs substrates, IEEE PHOTON, 12(7), 2000, pp. 774-776
Low chirp observed in directly modulated quantum dot lasers
Authors: Saito, H Nishi, K Kamei, A Sugou, S
Citation: H. Saito et al., Low chirp observed in directly modulated quantum dot lasers, IEEE PHOTON, 12(10), 2000, pp. 1298-1300
Photoluminescence of strain-induced coupled InGaAs/GaAs quantum-dot pairs
Authors: Ren, HW Nair, SV Lee, JS Sugou, S Matsumoto, Y
Citation: Hw. Ren et al., Photoluminescence of strain-induced coupled InGaAs/GaAs quantum-dot pairs, J ELEC MAT, 29(5), 2000, pp. 520-524
Carrier relaxation dynamics in InP quantum dots studied by artificial control of nonradiative losses
Authors: Ignatiev, IV Kozin, IE Nair, SV Ren, HW Sugou, S Masumoto, Y
Citation: Iv. Ignatiev et al., Carrier relaxation dynamics in InP quantum dots studied by artificial control of nonradiative losses, PHYS REV B, 61(23), 2000, pp. 15633-15636
Excitons at a single localized center induced by a natural composition modulation in bulk Ga0.5In0.5P
Authors: Sugisaki, M Ren, HW Nishi, K Sugou, S Masumoto, Y
Citation: M. Sugisaki et al., Excitons at a single localized center induced by a natural composition modulation in bulk Ga0.5In0.5P, PHYS REV B, 61(23), 2000, pp. 16040-16044
Imaging and single dot spectroscopy of InP self-assembled quantum dots
Authors: Sugisaki, M Ren, HW Nair, SV Lee, JS Sugou, S Okuno, T Masumoto, Y
Citation: M. Sugisaki et al., Imaging and single dot spectroscopy of InP self-assembled quantum dots, J LUMINESC, 87-9, 2000, pp. 40-45
LO phonon resonances in photoluminescence spectra of InP self-assembled quantum dots in electric field
Authors: Kozin, IE Ignatiev, IV Nair, SV Ren, HW Sugou, S Masumoto, Y
Citation: Ie. Kozin et al., LO phonon resonances in photoluminescence spectra of InP self-assembled quantum dots in electric field, J LUMINESC, 87-9, 2000, pp. 441-443
Phonon-enhanced intraband transitions in InAs self-assembled quantum dots
Authors: Baranov, AV Davydov, V Ren, HW Sugou, S Masumoto, Y
Citation: Av. Baranov et al., Phonon-enhanced intraband transitions in InAs self-assembled quantum dots, J LUMINESC, 87-9, 2000, pp. 503-505
"Unusual" temperature behavior of the photoluminescence of the InP and InGaAs quantum dots under quasi-resonance excitation
Authors: Davydov, V Ignatiev, IV Kozin, IE Lee, JS Ren, HW Sugou, S Masumoto, Y
Citation: V. Davydov et al., "Unusual" temperature behavior of the photoluminescence of the InP and InGaAs quantum dots under quasi-resonance excitation, J LUMINESC, 87-9, 2000, pp. 522-524
In situ observation of ellipsometry monolayer oscillations of metalorganicvapor-phase epitaxy-grown III-V compound materials
Authors: Lee, JS Sugou, S Masumoto, Y
Citation: Js. Lee et al., In situ observation of ellipsometry monolayer oscillations of metalorganicvapor-phase epitaxy-grown III-V compound materials, J CRYST GR, 209(4), 2000, pp. 614-620
Mechanism of ellipsometry monolayer oscillations during metalorganic vapor-phase epitaxy
Authors: Lee, JS Sugou, S Masumoto, Y
Citation: Js. Lee et al., Mechanism of ellipsometry monolayer oscillations during metalorganic vapor-phase epitaxy, J APPL PHYS, 88(1), 2000, pp. 196-200
Room temperature low-threshold CW operation of 1.23 mu m GaAsSbVCSELs on GaAs substrates
Authors: Yamada, M Anan, T Kurihara, K Nishi, K Tokutome, K Kamei, A Sugou, S
Citation: M. Yamada et al., Room temperature low-threshold CW operation of 1.23 mu m GaAsSbVCSELs on GaAs substrates, ELECTR LETT, 36(7), 2000, pp. 637-638
Lateral composition modulation induced optical anisotropy in InP/GaInP quantum dot system
Authors: Ren, HW Sugisaki, M Sugou, S Nishi, K Gomyo, A Masumoto, Y
Citation: Hw. Ren et al., Lateral composition modulation induced optical anisotropy in InP/GaInP quantum dot system, JPN J A P 1, 38(4B), 1999, pp. 2438-2441
Temperature dependence of luminescence decay time of InP quantum disks
Authors: Okuno, T Ren, HW Sugisaki, M Nishi, K Sugou, S Masumoto, Y
Citation: T. Okuno et al., Temperature dependence of luminescence decay time of InP quantum disks, JPN J A P 1, 38(2B), 1999, pp. 1094-1097
Highly uniform and small InP/GaInP self-assembled quantum dots grown by metal-organic vapor phase epitaxy
Authors: Ren, HW Sugisaki, M Lee, JS Sugou, S Masumoto, Y
Citation: Hw. Ren et al., Highly uniform and small InP/GaInP self-assembled quantum dots grown by metal-organic vapor phase epitaxy, JPN J A P 1, 38(1B), 1999, pp. 507-510
Observation of Franz-Keldysh oscillations in InP self-assembled quantum dot systems
Authors: Masumoto, Y Davydov, V Ignatiev, I Ren, HW Sugou, S
Citation: Y. Masumoto et al., Observation of Franz-Keldysh oscillations in InP self-assembled quantum dot systems, JPN J A P 1, 38(1B), 1999, pp. 563-565
Band line-up of InAsP/InAlGaAs quantum well
Authors: Anan, T Nishi, K Tokutome, K Sugou, S
Citation: T. Anan et al., Band line-up of InAsP/InAlGaAs quantum well, JPN J A P 1, 38(12A), 1999, pp. 6640-6644
Risultati: 1-25 | 26-41