AAAAAA
Results:
1-18
|
Results: 18
Authors:
ZAKNOUNE M
SCHULER O
MOLLOT F
THERON D
CROSNIER Y
Citation: M. Zaknoune et al., NONSELECTIVE WET CHEMICAL ETCHING OF GAAS AND ALGAINP FOR DEVICE APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 223-226
Authors:
PIOTROWICZ S
GAQUIERE C
BONTE B
BOURCIER E
THERON D
WALLART X
CROSNIER Y
Citation: S. Piotrowicz et al., BEST COMBINATION BETWEEN POWER-DENSITY, EFFICIENCY, AND GAIN AT V-BAND WITH AN INP-BASED PHEMT STRUCTURE, IEEE microwave and guided wave letters, 8(1), 1998, pp. 10-12
Authors:
MOURET G
CHEN W
BOUCHER D
BOCQUET R
MOUNAIX P
THERON D
LIPPENS D
Citation: G. Mouret et al., HIGH-POWER TERAHERTZ RADIATION FROM A HIGH-REPETITION-RATE LARGE-APERTURE PHOTOCONDUCTING ANTENNA, Microwave and optical technology letters, 17(1), 1998, pp. 23-27
Authors:
ZAKNOUNE M
BONTE B
GAQUIERE C
CORDIER Y
DRUELLE Y
THERON D
CROSNIER Y
Citation: M. Zaknoune et al., INALAS INGAAS METAMORPHIC HEMT WITH HIGH-CURRENT DENSITY AND HIGH BREAKDOWN VOLTAGE/, IEEE electron device letters, 19(9), 1998, pp. 345-347
Authors:
BOUDART B
GAQUIERE C
THERON D
Citation: B. Boudart et al., GATE CURRENT ANALYSIS OF LT-GAAS PASSIVATED MESFETS, Electronics Letters, 33(17), 1997, pp. 1496-1498
Authors:
BOUDART B
GAQUIERE C
TRASSAERT S
THERON D
SPLINGART B
LIPKA M
KOHN E
Citation: B. Boudart et al., SMALL-SIGNAL AND LARGE-SIGNAL MEASUREMENTS OF LOW-TEMPERATURE GAAS-FETS, Microwave and optical technology letters, 12(2), 1996, pp. 57-59
Authors:
DIETTE F
LANGREZ D
CODRON JL
DELOS E
THERON D
SALMER G
Citation: F. Diette et al., 1510MS MM 0.1-MU-M GATE LENGTH PSEUDOMORPHIC HEMTS WITH INTRINSIC CURRENT GAIN CUTOFF FREQUENCY OF 220GHZ/, Electronics Letters, 32(9), 1996, pp. 848-850
Authors:
GAQUIERE C
BONTE B
THERON D
CROSNIER Y
FAVRE J
Citation: C. Gaquiere et al., ANALYSIS OF THE SOURCE INDUCTANCE EFFECT ON THE POWER PERFORMANCE OF HIGH DEVELOPMENT HEMTS IN THE KA-BAND, IEEE microwave and guided wave letters, 5(8), 1995, pp. 243-245
Authors:
ALLAM R
KOLANOWSKI C
THERON D
CROSNIER Y
Citation: R. Allam et al., SUBHARMONIC GATE MIXER BASED ON A MULTICHANNEL HEMT, IEEE microwave and guided wave letters, 5(4), 1995, pp. 122-123
Authors:
ALLAM R
KOLANOWSKI C
THERON D
CROSNIER Y
Citation: R. Allam et al., AN HEMT WITH AN INTEGRATED ON-DRAIN CAPACITOR AS BASIS OF AN HYBRID MIXER, IEEE microwave and guided wave letters, 5(3), 1995, pp. 76-78
Authors:
ALLAM R
KOLANOWSKI C
THERON D
CROSNIER Y
Citation: R. Allam et al., ANALYSIS AND DESIGN OF A MULTICHANNEL HEMT GATE MIXER, Microwave and optical technology letters, 9(3), 1995, pp. 141-144
Authors:
LIPKA KM
SPLINGART B
THERON D
LUO JK
SALMER G
THOMAS H
MORGAN DV
KOHN E
Citation: Km. Lipka et al., LT-GAAS WITH HIGH BREAKDOWN STRENGTH AT LOW-TEMPERATURE FOR POWER MISFET APPLICATIONS, Journal of electronic materials, 24(7), 1995, pp. 913-916
Authors:
GAQUIERE C
BONTE B
THERON D
CROSNIER Y
ARSENEHENRI P
PACOU T
Citation: C. Gaquiere et al., BREAKDOWN ANALYSIS OF AN ASYMMETRICAL DOUBLE RECESSED POWER MESFETS, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 209-214
Authors:
ALLAM R
KOLANOWSKI C
THERON D
CROSNIER Y
Citation: R. Allam et al., LARGE-SIGNAL MODEL FOR ANALYSIS AND DESIGN OF HEMT GATE MIXER, IEEE microwave and guided wave letters, 4(12), 1994, pp. 405-407
Authors:
GAQUIERE C
THERON D
BONTE B
CROSNIER Y
Citation: C. Gaquiere et al., OPTIMIZATION OF A POWER PSEUDOMORPHIC DOUBLE-HETEROJUNCTION FET, Microwave and optical technology letters, 7(18), 1994, pp. 871-873
Authors:
GAQUIERE C
THERON D
BONTE B
CROSNIER Y
Citation: C. Gaquiere et al., 1W MM POWER PSEUDOMORPHIC HFET WITH OPTIMIZED RECESS TECHNOLOGY/, Electronics Letters, 30(11), 1994, pp. 904-906
Authors:
WESTPHALEN R
BOUDART B
THERON D
WALLART X
DRUELLE Y
CROSNIER Y
Citation: R. Westphalen et al., TEMPERATURE-MEASUREMENTS OF LT GAAS DIODES, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 78-81
Authors:
THERON D
BONTE B
GAQUIERE C
PLAYEZ E
CROSNIER Y
Citation: D. Theron et al., CHARACTERIZATION OF GAAS AND INGAAS DOUBLE-QUANTUM-WELL HETEROSTRUCTURE FETS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 1935-1941
Risultati:
1-18
|