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Results: 1-25 | 26-28
Results: 1-25/28
Direct-gap reduction and valence-band splitting of ordered indirect-gap AlInP2 studied by polarized piezoreflectance
Authors: Yeh, WC Lin, CJ Huang, YS Chang, CS Tiong, KK
Citation: Wc. Yeh et al., Direct-gap reduction and valence-band splitting of ordered indirect-gap AlInP2 studied by polarized piezoreflectance, JPN J A P 1, 40(6A), 2001, pp. 4064-4068
Temperature dependent polarized-piezoreflectance study of near direct bandedge interband transitions of AlInP2
Authors: Yeh, WC Lin, CJ Huang, YS Chang, CS Tiong, KK
Citation: Wc. Yeh et al., Temperature dependent polarized-piezoreflectance study of near direct bandedge interband transitions of AlInP2, JPN J A P 1, 40(10), 2001, pp. 5976-5980
Polarized electrolyte-electroreflectance study of ReS2 and ReSe2 layered semiconductors
Authors: Ho, CH Yen, PC Huang, YS Tiong, KK
Citation: Ch. Ho et al., Polarized electrolyte-electroreflectance study of ReS2 and ReSe2 layered semiconductors, J PHYS-COND, 13(35), 2001, pp. 8145-8152
Characterization of RuO2 and IrO2 films deposited on Si substrate
Authors: Liao, PC Huang, YS Tiong, KK
Citation: Pc. Liao et al., Characterization of RuO2 and IrO2 films deposited on Si substrate, J ALLOY COM, 317, 2001, pp. 98-102
Electrical and optical anisotropic properties of rhenium-doped molybdenum disulphide
Authors: Tiong, KK Huang, YS Ho, CH
Citation: Kk. Tiong et al., Electrical and optical anisotropic properties of rhenium-doped molybdenum disulphide, J ALLOY COM, 317, 2001, pp. 208-212
In-plane anisotropy of the optical and electrical properties of ReS2 and ReSe2 layered crystals
Authors: Ho, CH Huang, YS Tiong, KK
Citation: Ch. Ho et al., In-plane anisotropy of the optical and electrical properties of ReS2 and ReSe2 layered crystals, J ALLOY COM, 317, 2001, pp. 222-226
Novel electronic design for double-modulation spectroscopy of semiconductor and semiconductor microstructures
Authors: Ho, CH Hsieh, CH Chen, YJ Huang, YS Tiong, KK
Citation: Ch. Ho et al., Novel electronic design for double-modulation spectroscopy of semiconductor and semiconductor microstructures, REV SCI INS, 72(11), 2001, pp. 4218-4222
Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure
Authors: Lin, CJ Huang, YS Li, NY Li, PW Tiong, KK
Citation: Cj. Lin et al., Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure, J APPL PHYS, 90(9), 2001, pp. 4565-4569
Temperature-dependent contactless electroreflectance and photoluminescencestudy of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures
Authors: Lin, DY Huang, YS Shou, TS Tiong, KK Pollak, FH
Citation: Dy. Lin et al., Temperature-dependent contactless electroreflectance and photoluminescencestudy of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures, J APPL PHYS, 90(12), 2001, pp. 6421-6427
Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAspseudomorphic high electron mobility transistor structure
Authors: Cheng, YT Huang, YS Lin, DY Tiong, KK Pollak, FH Evans, KR
Citation: Yt. Cheng et al., Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAspseudomorphic high electron mobility transistor structure, APPL PHYS L, 79(7), 2001, pp. 949-951
Anisotropic electrolyte electroreflectance study of rhenium-doped MoS2
Authors: Tiong, KK Shou, TS
Citation: Kk. Tiong et Ts. Shou, Anisotropic electrolyte electroreflectance study of rhenium-doped MoS2, J PHYS-COND, 12(23), 2000, pp. 5043-5052
Temperature dependence piezoreflectance study of the effect of doping MoS2with rhenium
Authors: Tiong, KK Shou, TS Ho, CH
Citation: Kk. Tiong et al., Temperature dependence piezoreflectance study of the effect of doping MoS2with rhenium, J PHYS-COND, 12(14), 2000, pp. 3441-3449
Temperature dependent polarized-piezoreflectance study of GaInP
Authors: Yeh, WC Chen, S Huang, YS Ho, CH Tiong, KK
Citation: Wc. Yeh et al., Temperature dependent polarized-piezoreflectance study of GaInP, J PHYS-COND, 12(10), 2000, pp. 2183-2192
Piezoreflectance study of an Fe-containing silicon carbon nitride crystalline film
Authors: Hsieh, CH Huang, YS Tiong, KK Fan, CW Chen, YF Chen, LC Wu, JJ Chen, KH
Citation: Ch. Hsieh et al., Piezoreflectance study of an Fe-containing silicon carbon nitride crystalline film, J APPL PHYS, 87(1), 2000, pp. 280-284
Piezoreflectance study of silicon carbon nitride nanorods
Authors: Hsieh, CH Huang, YS Kuo, PF Chen, YF Chen, LC Wu, JJ Chen, KH Tiong, KK
Citation: Ch. Hsieh et al., Piezoreflectance study of silicon carbon nitride nanorods, APPL PHYS L, 76(15), 2000, pp. 2044-2046
Second harmonic electroreflectance study of AlGaAs-GaAs asymmetric triangular and coupled double quantum wells
Authors: Tiong, KK Lin, DY Huang, YS
Citation: Kk. Tiong et al., Second harmonic electroreflectance study of AlGaAs-GaAs asymmetric triangular and coupled double quantum wells, JPN J A P 1, 38(5A), 1999, pp. 2729-2734
In-plane anisotropy of the optical and electrical properties of layered ReS2 crystals
Authors: Ho, CH Huang, YS Tiong, KK Liao, PC
Citation: Ch. Ho et al., In-plane anisotropy of the optical and electrical properties of layered ReS2 crystals, J PHYS-COND, 11(27), 1999, pp. 5367-5375
Temperature dependence of the band-edge exciton of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs
Authors: Chen, HJ Lin, DY Huang, YS Tu, RC Su, YK Tiong, KK
Citation: Hj. Chen et al., Temperature dependence of the band-edge exciton of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs, SEMIC SCI T, 14(1), 1999, pp. 85-88
Room-temperature phototransmittance and photoluminescence characterizationof the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles
Authors: Lin, DY Huang, YS Tiong, KK Pollak, FH Evans, KR
Citation: Dy. Lin et al., Room-temperature phototransmittance and photoluminescence characterizationof the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles, SEMIC SCI T, 14(1), 1999, pp. 103-109
Design and implementation of an L-band PLL frequency synthesizer
Authors: Sun, JS Tiong, KK Liu, JH
Citation: Js. Sun et al., Design and implementation of an L-band PLL frequency synthesizer, MICROWAVE J, 42(4), 1999, pp. 90
Electronic structure of ReS2 and ReSe2 from first-principles calculations,photoelectron spectroscopy, and electrolyte electroreflectance
Authors: Ho, CH Huang, YS Chen, JL Dann, TE Tiong, KK
Citation: Ch. Ho et al., Electronic structure of ReS2 and ReSe2 from first-principles calculations,photoelectron spectroscopy, and electrolyte electroreflectance, PHYS REV B, 60(23), 1999, pp. 15766-15771
The electrical transport properties of ReS2 and ReSe2 layered crystals
Authors: Tiong, KK Ho, CH Huang, YS
Citation: Kk. Tiong et al., The electrical transport properties of ReS2 and ReSe2 layered crystals, SOL ST COMM, 111(11), 1999, pp. 635-640
An electrolyte electroreflectance study of ReS2
Authors: Ho, CH Huang, YS Tiong, KK
Citation: Ch. Ho et al., An electrolyte electroreflectance study of ReS2, SOL ST COMM, 109(1), 1999, pp. 19-22
Crystal structure and band-edge transitions of ReS2-xSex layered compounds
Authors: Ho, CH Huang, YS Liao, PC Tiong, KK
Citation: Ch. Ho et al., Crystal structure and band-edge transitions of ReS2-xSex layered compounds, J PHYS CH S, 60(11), 1999, pp. 1797-1804
Growth and characterization of rhenium-doped MoS2 single crystals
Authors: Tiong, KK Liao, PC Ho, CH Huang, YS
Citation: Kk. Tiong et al., Growth and characterization of rhenium-doped MoS2 single crystals, J CRYST GR, 205(4), 1999, pp. 543-547
Risultati: 1-25 | 26-28