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Results: 1-25 | 26-34
Results: 1-25/34
CHARGE DISSIPATION ON CHEMICALLY TREATED THIN SILICON-OXIDE IN AIR
Authors: UCHIHASHI T NAKANO A IDA T ANDOH Y KANEKO R SUGAWARA Y MORITA S
Citation: T. Uchihashi et al., CHARGE DISSIPATION ON CHEMICALLY TREATED THIN SILICON-OXIDE IN AIR, JPN J A P 1, 36(6A), 1997, pp. 3755-3758
MEASUREMENT OF THE EVANESCENT FIELD USING NONCONTACT MODE ATOMIC-FORCE MICROSCOPE
Authors: ABE M UCHIHASHI T OHTA M UEYAMA H SUGAWARA Y MORITA S
Citation: M. Abe et al., MEASUREMENT OF THE EVANESCENT FIELD USING NONCONTACT MODE ATOMIC-FORCE MICROSCOPE, Optical review, 4(1B), 1997, pp. 232-235
DETECTION MECHANISM OF AN OPTICAL EVANESCENT FIELD USING A NONCONTACTMODE ATOMIC-FORCE MICROSCOPE WITH A FREQUENCY-MODULATION DETECTION METHOD
Authors: ABE M UCHIHASHI T OHTA M UEYAMA H SUGAWARA Y MORITA S
Citation: M. Abe et al., DETECTION MECHANISM OF AN OPTICAL EVANESCENT FIELD USING A NONCONTACTMODE ATOMIC-FORCE MICROSCOPE WITH A FREQUENCY-MODULATION DETECTION METHOD, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1512-1515
DEVELOPMENT OF ULTRAHIGH-VACUUM ATOMIC-FORCE MICROSCOPY WITH FREQUENCY-MODULATION DETECTION AND ITS APPLICATION TO ELECTROSTATIC FORCE MEASUREMENT
Authors: UCHIHASHI T OHTA M SUGAWARA Y YANASE Y SIGEMATSU T SUZUKI M MORITA S
Citation: T. Uchihashi et al., DEVELOPMENT OF ULTRAHIGH-VACUUM ATOMIC-FORCE MICROSCOPY WITH FREQUENCY-MODULATION DETECTION AND ITS APPLICATION TO ELECTROSTATIC FORCE MEASUREMENT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1543-1546
TRUE ATOMIC-RESOLUTION IMAGING WITH NONCONTACT ATOMIC-FORCE MICROSCOPY
Authors: SUGAWARA Y UEYAMA H UCHIHASHI T OHTA M MORITA S SUZUKI M MISHIMA S
Citation: Y. Sugawara et al., TRUE ATOMIC-RESOLUTION IMAGING WITH NONCONTACT ATOMIC-FORCE MICROSCOPY, Applied surface science, 114, 1997, pp. 364-370
ROLE OF A COVALENT BONDING INTERACTION IN NONCONTACT-MODE ATOMIC-FORCE MICROSCOPY ON SI(111)7X7
Authors: UCHIHASHI T SUGAWARA Y TSUKAMOTO T OHTA M MORITA S SUZUKI M
Citation: T. Uchihashi et al., ROLE OF A COVALENT BONDING INTERACTION IN NONCONTACT-MODE ATOMIC-FORCE MICROSCOPY ON SI(111)7X7, Physical review. B, Condensed matter, 56(15), 1997, pp. 9834-9840
STABILITY OF DENSELY CONTACT-ELECTRIFIED CHARGES ON THIN SILICON-OXIDE IN AIR
Authors: MORITA S UCHIHASHI T OKUSAKO T YAMANISHI Y OASA T SUGAWARA Y
Citation: S. Morita et al., STABILITY OF DENSELY CONTACT-ELECTRIFIED CHARGES ON THIN SILICON-OXIDE IN AIR, JPN J A P 1, 35(11), 1996, pp. 5811-5814
DENSITY SATURATION OF DENSELY CONTACT-ELECTRIFIED NEGATIVE CHARGES ONA THIN SILICON-OXIDE SAMPLE DUE TO THE COULOMB REPULSIVE FORCE
Authors: SUGAWARA Y TSUYUGUCHI T UCHIHASHI T OKUSAKO T FUKANO Y YAMANISHI Y OASA T MORITA S
Citation: Y. Sugawara et al., DENSITY SATURATION OF DENSELY CONTACT-ELECTRIFIED NEGATIVE CHARGES ONA THIN SILICON-OXIDE SAMPLE DUE TO THE COULOMB REPULSIVE FORCE, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 74(5), 1996, pp. 1339-1346
CORRELATION BETWEEN CONTACT-ELECTRIFIED CHARGE GROUPS ON A THIN SILICON-OXIDE
Authors: UCHIHASHI T OKUSAKO T SUGAWARA Y YAMANISHI Y OASA T MORITA S
Citation: T. Uchihashi et al., CORRELATION BETWEEN CONTACT-ELECTRIFIED CHARGE GROUPS ON A THIN SILICON-OXIDE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 1055-1059
PROXIMITY EFFECTS OF NEGATIVE CHARGE GROUPS CONTACT-ELECTRIFIED ON THIN SILICON-OXIDE IN AIR
Authors: UCHIHASHI T OKUSAKO T SUGAWARA Y YAMANISHI Y OASA T MORITA S
Citation: T. Uchihashi et al., PROXIMITY EFFECTS OF NEGATIVE CHARGE GROUPS CONTACT-ELECTRIFIED ON THIN SILICON-OXIDE IN AIR, Journal of applied physics, 79(8), 1996, pp. 4174-4177
PROPAGATING ELECTRONS ALONG DOMAIN-WALLS OF AU(111) OBSERVED BY INTERFERENCE OF COHERENT ELECTRONS AT LOW-TEMPERATURE
Authors: NEJO H FUJITA D YAKABE T ITAKURA A UCHIHASHI T
Citation: H. Nejo et al., PROPAGATING ELECTRONS ALONG DOMAIN-WALLS OF AU(111) OBSERVED BY INTERFERENCE OF COHERENT ELECTRONS AT LOW-TEMPERATURE, Czechoslovak journal of Physics, 46, 1996, pp. 2357-2358
SPECTROSCOPY OF A SINGLE SUPERCONDUCTING FINE-PARTICLE USING A SCANNING TUNNELING MICROSCOPE
Authors: UCHIHASHI T YAGI R KOBAYASHI S
Citation: T. Uchihashi et al., SPECTROSCOPY OF A SINGLE SUPERCONDUCTING FINE-PARTICLE USING A SCANNING TUNNELING MICROSCOPE, Journal of the Physical Society of Japan, 64(4), 1995, pp. 1059-1062
CHARGE STORAGE ON THIN SRTIO3 FILM BY CONTACT ELECTRIFICATION
Authors: UCHIHASHI T OKUSAKO T TSUYUGUCHI T SUGAWARA Y IGARASHI M KANEKO R MORITA S
Citation: T. Uchihashi et al., CHARGE STORAGE ON THIN SRTIO3 FILM BY CONTACT ELECTRIFICATION, JPN J A P 1, 33(9B), 1994, pp. 5573-5576
TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF THIN SILICON-OXIDE USING DENSECONTACT ELECTRIFICATION
Authors: FUKANO Y HONTANI KJ UCHIHASHI T OKUSAKO T CHAYAHARA A SUGAWARA Y YAMANISHI Y OASA T MORITA S
Citation: Y. Fukano et al., TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF THIN SILICON-OXIDE USING DENSECONTACT ELECTRIFICATION, JPN J A P 1, 33(6B), 1994, pp. 3756-3760
TIME EVOLUTION OF CONTACT-ELECTRIFIED ELECTRON DISSIPATION ON SILICON-OXIDE SURFACE INVESTIGATED USING NONCONTACT ATOMIC-FORCE MICROSCOPE
Authors: FUKANO Y UCHIHASHI T OKUSAKO T CHAYAHARA A SUGAWARA Y YAMANISHI Y OASA T MORITA S
Citation: Y. Fukano et al., TIME EVOLUTION OF CONTACT-ELECTRIFIED ELECTRON DISSIPATION ON SILICON-OXIDE SURFACE INVESTIGATED USING NONCONTACT ATOMIC-FORCE MICROSCOPE, JPN J A P 1, 33(1B), 1994, pp. 379-382
PARAMETER DEPENDENCE OF STABLE STATE OF DENSELY CONTACT-ELECTRIFIED ELECTRONS ON THIN SILICON-OXIDE
Authors: FUKANO Y UCHIHASHI T OKUSAKO T CHAYAHARA A SUGAWARA Y YAMANISHI Y OASA T MORITA S
Citation: Y. Fukano et al., PARAMETER DEPENDENCE OF STABLE STATE OF DENSELY CONTACT-ELECTRIFIED ELECTRONS ON THIN SILICON-OXIDE, JPN J A P 1, 33(12A), 1994, pp. 6739-6745
HEAT-TREATMENT AND STEAMING EFFECTS OF SILICON-OXIDE UPON ELECTRON DISSIPATION ON SILICON-OXIDE SURFACE
Authors: UCHIHASHI T OKUSAKO T SUGAWARA Y YAMANISHI Y OASA T MORITA S
Citation: T. Uchihashi et al., HEAT-TREATMENT AND STEAMING EFFECTS OF SILICON-OXIDE UPON ELECTRON DISSIPATION ON SILICON-OXIDE SURFACE, JPN J A P 2, 33(8A), 1994, pp. 120001128-120001130
CONTACT ELECTRIFICATION ON THIN SILICON-OXIDE IN VACUUM
Authors: TSUYUGUCHI T UCHIHASHI T OKUSAKO T SUGAWARA Y MORITA S YAMANISHI Y OASA T
Citation: T. Tsuyuguchi et al., CONTACT ELECTRIFICATION ON THIN SILICON-OXIDE IN VACUUM, JPN J A P 2, 33(7B), 1994, pp. 120001046-120001048
DISSIPATION OF CONTACT ELECTRIFIED ELECTRONS ON DIELECTRIC THIN-FILMSWITH SILICON SUBSTRATE
Authors: OKUSAKO T UCHIHASHI T NAKANO A IDA T SUGAWARA Y MORITA S
Citation: T. Okusako et al., DISSIPATION OF CONTACT ELECTRIFIED ELECTRONS ON DIELECTRIC THIN-FILMSWITH SILICON SUBSTRATE, JPN J A P 2, 33(7A), 1994, pp. 120000959-120000961
CONTACT ELECTRIFICATION ON THIN SRTIO3 FILM BY ATOMIC-FORCE MICROSCOPE
Authors: UCHIHASHI T OKUSAKO T YAMADA J FUKANO Y SUGAWARA Y IGARASHI M KANEKO R MORITA S
Citation: T. Uchihashi et al., CONTACT ELECTRIFICATION ON THIN SRTIO3 FILM BY ATOMIC-FORCE MICROSCOPE, JPN J A P 2, 33(3A), 1994, pp. 120000374-120000376
SPATIAL-DISTRIBUTION AND ITS PHASE-TRANSITION OF DENSELY CONTACT-ELECTRIFIED ELECTRONS ON A THIN SILICON-OXIDE
Authors: SUGAWARA Y MORITA S FUKANO Y UCHIHASHI T OKUSAKO T CHAYAHARA A YAMANISHI Y OASA T
Citation: Y. Sugawara et al., SPATIAL-DISTRIBUTION AND ITS PHASE-TRANSITION OF DENSELY CONTACT-ELECTRIFIED ELECTRONS ON A THIN SILICON-OXIDE, JPN J A P 2, 33(1A), 1994, pp. 120000070-120000073
SPATIAL DISTRIBUTIONS OF DENSELY CONTACT-ELECTRIFIED CHARGES ON A THIN SILICON-OXIDE
Authors: SUGAWARA Y MORITA S FUKANO Y UCHIHASHI T OKUSAKO T CHAYAHARA A YAMANISHI Y OASA T
Citation: Y. Sugawara et al., SPATIAL DISTRIBUTIONS OF DENSELY CONTACT-ELECTRIFIED CHARGES ON A THIN SILICON-OXIDE, JPN J A P 2, 33(1A), 1994, pp. 120000074-120000077
POTENTIOMETRY COMBINED WITH ATOMIC-FORCE MICROSCOPE
Authors: UCHIHASHI T FUKANO Y SUGAWARA Y MORITA S NAKANO A IDA T OKADA T
Citation: T. Uchihashi et al., POTENTIOMETRY COMBINED WITH ATOMIC-FORCE MICROSCOPE, JPN J A P 2, 33(11A), 1994, pp. 120001562-120001564
ATOMIC-FORCE MICROSCOPY STUDIES OF CONTACT-ELECTRIFIED CHARGES ON SILICON-OXIDE FILM
Authors: SUGAWARA Y FUKANO Y UCHIHASHI T OKUSAKO T MORITA S YAMANISHI Y OASA T OKADA T
Citation: Y. Sugawara et al., ATOMIC-FORCE MICROSCOPY STUDIES OF CONTACT-ELECTRIFIED CHARGES ON SILICON-OXIDE FILM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1627-1630
DISSIPATION OF CONTACT-ELECTRIFIED CHARGE ON THIN SI-OXIDE STUDIED BYATOMIC-FORCE MICROSCOPY
Authors: MORITA S FUKANO Y UCHIHASHI T SUGAWARA Y YAMANISHI Y OASA T
Citation: S. Morita et al., DISSIPATION OF CONTACT-ELECTRIFIED CHARGE ON THIN SI-OXIDE STUDIED BYATOMIC-FORCE MICROSCOPY, Applied surface science, 75, 1994, pp. 151-156
Risultati: 1-25 | 26-34