Results: 1-25 | 26-31
Results: 1-25/31
1.54-MU-M LUMINESCENCE OF ER-MEV IMPLANTED SILICON
Authors: MAJIMA A UEKUSA S ABE K KUMAGAI M
Citation: A. Majima et al., 1.54-MU-M LUMINESCENCE OF ER-MEV IMPLANTED SILICON, Journal of luminescence, 60-1, 1994, pp. 595-598
ANALYSIS OF REACTION GASES FLOW IN CVD PROCESSES
Authors: MIZUNO Y UEKUSA S
Citation: Y. Mizuno et S. Uekusa, ANALYSIS OF REACTION GASES FLOW IN CVD PROCESSES, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 156-159
CARBON DOPING INTO GAAS USING COMBINED ION-BEAM AND MOLECULAR-BEAM EPITAXY METHOD
Authors: IIDA T MAKITA Y KIMURA S KAWASUMI Y YAMADA A UEKUSA S TSUKAMOTO T
Citation: T. Iida et al., CARBON DOPING INTO GAAS USING COMBINED ION-BEAM AND MOLECULAR-BEAM EPITAXY METHOD, Journal of crystal growth, 150(1-4), 1995, pp. 236-240
C-ENERGY-DEPENDENT RESIDUAL ION DAMAGE IN GAAS-C GROWN BY THE LOW-ENERGY ION-BEAM DOPING METHOD()
Authors: IIDA T MAKITA Y SHIMA T KIMURA S HORN J HARTANGEL HL UEKUSA S
Citation: T. Iida et al., C-ENERGY-DEPENDENT RESIDUAL ION DAMAGE IN GAAS-C GROWN BY THE LOW-ENERGY ION-BEAM DOPING METHOD(), Journal of applied physics, 80(7), 1996, pp. 3828-3833
CRYSTALLIZATION OF SISN AND SISNC LAYERS IN SI BY SOLID-PHASE EPITAXYAND ION-BEAM-INDUCED EPITAXY
Authors: KOBAYASHI N ZHU DH KATSUMATA H KAKEMOTO H HASEGAWA M HAYASHI N SHIBATA H MAKITA Y UEKUSA S TSUKAMOTO T
Citation: N. Kobayashi et al., CRYSTALLIZATION OF SISN AND SISNC LAYERS IN SI BY SOLID-PHASE EPITAXYAND ION-BEAM-INDUCED EPITAXY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 199-202
EFFECT OF MULTIPLE-STEP ANNEALING ON THE FORMATION OF SEMICONDUCTING BETA-FESI2 AND METALLIC ALPHA-FE2SI5 ON SI(100) BY ION-BEAM SYNTHESIS
Authors: KATSUMATA H MAKITA Y KOBAYASHI N SHIBATA H HASEGAWA M UEKUSA S
Citation: H. Katsumata et al., EFFECT OF MULTIPLE-STEP ANNEALING ON THE FORMATION OF SEMICONDUCTING BETA-FESI2 AND METALLIC ALPHA-FE2SI5 ON SI(100) BY ION-BEAM SYNTHESIS, JPN J A P 1, 36(5A), 1997, pp. 2802-2812
EXCITATION AND THERMAL QUENCHING PROPERTIES IN NITROGEN CODOPED SI-ER
Authors: UEKUSA S AWAHARA K SHIMADZU K YABUTA K
Citation: S. Uekusa et al., EXCITATION AND THERMAL QUENCHING PROPERTIES IN NITROGEN CODOPED SI-ER, Journal of luminescence, 72-4, 1997, pp. 123-125
EXCITATION MECHANISMS OF ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OFER3-IMPLANTED SI( IN ER)
Authors: UEKUSA S AWAHARA K SHIMADZU K KUMAGAI M
Citation: S. Uekusa et al., EXCITATION MECHANISMS OF ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OFER3-IMPLANTED SI( IN ER), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 537-540
FORMATION OF 4 NEW SHALLOW EMISSIONS IN MN-IMPLANTED GAAS GROWN BY MOLECULAR-BEAM EPITAXY HAVING EXTREMELY LOW CONCENTRATION OF BACKGROUND IMPURITIES( ION)
Authors: SHEN HL MAKITA Y NIKI S YAMADA A IIDA T SHIBATA H OBARA A UEKUSA S
Citation: Hl. Shen et al., FORMATION OF 4 NEW SHALLOW EMISSIONS IN MN-IMPLANTED GAAS GROWN BY MOLECULAR-BEAM EPITAXY HAVING EXTREMELY LOW CONCENTRATION OF BACKGROUND IMPURITIES( ION), Applied physics letters, 63(13), 1993, pp. 1780-1782
FORMATION OF POLYCRYSTALLINE BETA-FESI2 LAYERS BY ION-IMPLANTATION AND THEIR OPTICAL-PROPERTIES
Authors: KAKEMOTO H KATSUMATA H TAKADA T TSAI YS HASEGAWA M SAKURAGI S KOBAYASHI N MAKITA Y TSUKAMOTO T UEKUSA S
Citation: H. Kakemoto et al., FORMATION OF POLYCRYSTALLINE BETA-FESI2 LAYERS BY ION-IMPLANTATION AND THEIR OPTICAL-PROPERTIES, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 253(1-2), 1998, pp. 284-291
HYDRODYNAMIC MODEL OF THIN-FILM DEPOSITION
Authors: MIZUNO Y UEKUSA S
Citation: Y. Mizuno et S. Uekusa, HYDRODYNAMIC MODEL OF THIN-FILM DEPOSITION, Microelectronic engineering, 43-4, 1998, pp. 519-526
HYPERTHERMAL (30-500 EV) C-BEAM DOPING INTO GAAS DURING MOLECULAR-BEAM EPITAXY( ION)
Authors: IIDA T MAKITA Y KIMURA S KAWASUMI Y YAMADA A TSUKAMOTO T UEKUSA S MATSUDA K
Citation: T. Iida et al., HYPERTHERMAL (30-500 EV) C-BEAM DOPING INTO GAAS DURING MOLECULAR-BEAM EPITAXY( ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 331-334
INFLUENCE OF IMPURITIES (NITROGEN, OXYGEN) ON ER-RELATED EMISSION IN GALLIUM-PHOSPHIDE
Authors: UEKUSA S YANO Y FUKAYA K KUMAGAI M
Citation: S. Uekusa et al., INFLUENCE OF IMPURITIES (NITROGEN, OXYGEN) ON ER-RELATED EMISSION IN GALLIUM-PHOSPHIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 541-544
INFRARED THERMAL CHEMICAL-VAPOR-DEPOSITION OF THIN SIN FILM ON INP - DEPENDENCE OF DEPOSITION RATE AND FILM CHARACTERISTICS ON PRESSURE ANDGAS FLUX RATIO
Authors: UEKUSA S MIZUNO Y
Citation: S. Uekusa et Y. Mizuno, INFRARED THERMAL CHEMICAL-VAPOR-DEPOSITION OF THIN SIN FILM ON INP - DEPENDENCE OF DEPOSITION RATE AND FILM CHARACTERISTICS ON PRESSURE ANDGAS FLUX RATIO, JPN J A P 1, 33(5A), 1994, pp. 2679-2683
ION-BEAM DOPING OF GAAS WITH LOW-ENERGY (100-EV) C-BEAM AND MOLECULAR-BEAM EPITAXY( USING COMBINED ION)
Authors: IIDA T MAKITA Y KIMURA S WINTER S YAMADA A FONS P UEKUSA S
Citation: T. Iida et al., ION-BEAM DOPING OF GAAS WITH LOW-ENERGY (100-EV) C-BEAM AND MOLECULAR-BEAM EPITAXY( USING COMBINED ION), Journal of applied physics, 77(1), 1995, pp. 146-152
ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION (IBIEC) AND SOLID-PHASE EPITAXIAL-GROWTH (SPEG) OF SI1-XCX LAYERS IN SI FABRICATED BY C ION-IMPLANTATION
Authors: KOBAYASHI N ZHU DH HASEGAWA M KATSUMATA H TANAKA Y HAYASHI N MAKITA Y SHIBATA H UEKUSA S
Citation: N. Kobayashi et al., ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION (IBIEC) AND SOLID-PHASE EPITAXIAL-GROWTH (SPEG) OF SI1-XCX LAYERS IN SI FABRICATED BY C ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 350-354
ION-IMPLANTATION OF ISOELECTRONIC IMPURITIES INTO INP
Authors: YAMADA A MAKITA Y MAYER KM IIDA T YOSHINAGA H KIMURA S NIKI S SHIBATA H UEKUSA S MATSUMORI T
Citation: A. Yamada et al., ION-IMPLANTATION OF ISOELECTRONIC IMPURITIES INTO INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 910-914
LOW-ENERGY (100 EV) C-BEAM AND MOLECULAR-BEAM EPITAXIAL TECHNOLOGY( ION DOPING INTO GAAS USING COMBINED ION)
Authors: LIDA T MAKITA Y KIMURA S WINTER S YAMADA A SHIBATA H OBARA A NIKI S FONS P TSAI Y UEKUSA S
Citation: T. Lida et al., LOW-ENERGY (100 EV) C-BEAM AND MOLECULAR-BEAM EPITAXIAL TECHNOLOGY( ION DOPING INTO GAAS USING COMBINED ION), Applied physics letters, 63(14), 1993, pp. 1951-1953
MICROGRAIN STRUCTURE INFLUENCE ON ELECTRICAL CHARACTERISTICS OF SPUTTERED INDIUM TIN OXIDE-FILMS
Authors: HIGUCHI M UEKUSA S NAKANO R YOKOGAWA K
Citation: M. Higuchi et al., MICROGRAIN STRUCTURE INFLUENCE ON ELECTRICAL CHARACTERISTICS OF SPUTTERED INDIUM TIN OXIDE-FILMS, Journal of applied physics, 74(11), 1993, pp. 6710-6713
OPTICAL-ABSORPTION AND PHOTOLUMINESCENCE STUDIES OF BETA-FESI2 PREPARED BY HEAVY IMPLANTATION OF FE+ IONS INTO SI
Authors: KATSUMATA H MAKITA Y KOBAYASHI N SHIBATA H HASEGAWA M AKSENOV I KIMURA S OBARA A UEKUSA S
Citation: H. Katsumata et al., OPTICAL-ABSORPTION AND PHOTOLUMINESCENCE STUDIES OF BETA-FESI2 PREPARED BY HEAVY IMPLANTATION OF FE+ IONS INTO SI, Journal of applied physics, 80(10), 1996, pp. 5955-5962
OPTICAL ACTIVATION OF ER3-IMPLANTED WITH CARBON( IN SILICON CO)
Authors: UEKUSA S SHIMAZU K MAJIMA A YABUTA K
Citation: S. Uekusa et al., OPTICAL ACTIVATION OF ER3-IMPLANTED WITH CARBON( IN SILICON CO), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 477-479
OPTICAL AND CRYSTALLINE PROPERTIES OF YB IMPLANTED INP
Authors: KATSUMATA H UEKUSA S MAJIMA A KUMAGAI M
Citation: H. Katsumata et al., OPTICAL AND CRYSTALLINE PROPERTIES OF YB IMPLANTED INP, Journal of applied physics, 77(5), 1995, pp. 1881-1887
PHOTOLUMINESCENCE AND RAMAN-SCATTERING STUDIES OF 2 MEV YB-IMPLANTED INP AS A FUNCTION OF ETCHING DEPTH()
Authors: KATSUMATA H UEKUSA S SAI H KUMAGAI M
Citation: H. Katsumata et al., PHOTOLUMINESCENCE AND RAMAN-SCATTERING STUDIES OF 2 MEV YB-IMPLANTED INP AS A FUNCTION OF ETCHING DEPTH(), Journal of applied physics, 80(4), 1996, pp. 2383-2387
PHOTOLUMINESCENCE STUDIES OF EPITAXIAL SI1-XGEX AND SI1-X-YGEXCY LAYERS ON SI FORMED BY ION-BEAM SYNTHESIS
Authors: KATSUMATA H KOBAYASHI N MAKITA Y HASEGAWA M HAYASHI N SHIBATA H UEKUSA S
Citation: H. Katsumata et al., PHOTOLUMINESCENCE STUDIES OF EPITAXIAL SI1-XGEX AND SI1-X-YGEXCY LAYERS ON SI FORMED BY ION-BEAM SYNTHESIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 146-150
POSTDEPOSITION ANNEALING INFLUENCE ON SPUTTERED INDIUM TIN OXIDE FILMCHARACTERISTICS
Authors: HIGUCHI M UEKUSA S NAKANO R YOKOGAWA K
Citation: M. Higuchi et al., POSTDEPOSITION ANNEALING INFLUENCE ON SPUTTERED INDIUM TIN OXIDE FILMCHARACTERISTICS, JPN J A P 1, 33(1A), 1994, pp. 302-306
Risultati: 1-25 | 26-31