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Results: 1-25/27
Authors:
GROSSMAN SR
PEREZ M
KUNG AL
JOSEPH M
MANSUR C
XIAO ZX
KUMAR S
HOWLEY PM
LIVINGSTON DM
Citation: Sr. Grossman et al., P300 MDM2 COMPLEXES PARTICIPATE IN MDM2-MEDIATED P53 DEGRADATION/, MOLECULAR CELL, 2(4), 1998, pp. 405-415
Authors:
XIAO ZX
WU GY
ZHANG DC
ZHANG GB
LI ZH
HAO YL
WANG YY
Citation: Zx. Xiao et al., SILICON GLASS WAFER-TO-WAFER BONDING WITH TI/NI INTERMEDIATE BONDING/, Sensors and actuators. A, Physical, 71(1-2), 1998, pp. 123-126
Authors:
FAN YM
YE BJ
WANG ZM
HAN RD
YU XQ
DU HJ
XIAO ZX
Citation: Ym. Fan et al., PROTON EMISSION CROSS-SECTIONS FOR BOMBARDMENT OF STAINLESS-STEEL BY 14.6-MEV NEUTRONS, Fusion technology, 33(4), 1998, pp. 462-467
Authors:
YE BJ
HAN RD
WANG ZM
FAN YM
YU XQ
DU HJ
XIAO ZX
Citation: Bj. Ye et al., MEASUREMENT OF ALPHA-PARTICLES EMITTED FROM INTERACTION OF 14.6 MEV NEUTRONS WITH ELEMENTAL NICKEL, Journal of Nuclear Science and Technology, 35(1), 1998, pp. 1-5
Authors:
XIAO ZX
WU GY
ZHANG GB
LI ZH
HAO YL
CHEN WR
WANG YY
Citation: Zx. Xiao et al., LOW-TEMPERATURE SILICON WAFER-TO-WAFER BONDING WITH NICKEL SILICIDE, Journal of the Electrochemical Society, 145(4), 1998, pp. 1360-1362
Authors:
YE BJ
WANG ZM
FAN YM
HAN RD
XIAO ZX
Citation: Bj. Ye et al., MEASUREMENT OF DOUBLE-DIFFERENTIAL (N,XP) CROSS-SECTIONS OF NATURAL NICKEL IN 14.6 MEV NEUTRON ENERGY, Nuclear physics. A, 612(2), 1997, pp. 213-222
Authors:
YE BJ
YU XQ
FAN YM
WANG ZM
JIN SG
HAN RD
DU HJ
XIAO ZX
Citation: Bj. Ye et al., PARTICLE IDENTIFICATION IN THE MEASUREMENT OF DIFFERENTIAL (N,X) CROSS-SECTIONS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 398(2-3), 1997, pp. 224-228
Authors:
XIAO ZX
WEI TL
Citation: Zx. Xiao et Tl. Wei, QUANTITATIVE MODELING OF CURRENT GAIN AND CUTOFF FREQUENCY AT HIGH INJECTION LEVELS AT 77 AND 300K IN POLYSILICON EMITTER CONTACT BIPOLAR-TRANSISTOR, International journal of electronics, 82(5), 1997, pp. 451-470
Authors:
XIAO ZX
WEI TL
Citation: Zx. Xiao et Tl. Wei, MODELING OF HOOGE PARAMETER OF ELECTRONS IN HEAVILY PHOSPHORUS-DOPED SILICON AT LOW-TEMPERATURES, International journal of electronics, 82(3), 1997, pp. 219-226
Authors:
XIAO ZX
WEI TL
Citation: Zx. Xiao et Tl. Wei, A UNIFIED MODEL FOR THE VERTICAL BASE WIDENING EFFECT IN SILICON BIPOLAR-TRANSISTOR AT 77 AND 300 K, International journal of electronics, 82(1), 1997, pp. 1-7
Authors:
XIAO ZX
WEI TL
Citation: Zx. Xiao et Tl. Wei, MODIFICATION OF THE EINSTEIN EQUATIONS OF MAJORITY-CARRIERS AND MINORITY-CARRIERS WITH BAND-GAP NARROWING EFFECT IN N-TYPE DEGENERATE SILICON WITH DEGENERATE APPROXIMATION AND WITH NON-PARABOLIC ENERGY-BANDS, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 913-914
Authors:
XIAO ZX
WEI TL
JIANG Z
Citation: Zx. Xiao et al., CALCULATION AND ANALYSIS OF THE INTRINSIC CARRIER CONCENTRATION AND THE EINSTEIN RELATION FOR HEAVILY-DOPED SILICON FROM 77 K TO 300 K, JPN J A P 1, 35(3), 1996, pp. 1599-1604
Authors:
YE BJ
FAN YM
WANG ZM
HAN RD
XIAO ZX
Citation: Bj. Ye et al., PROTON EMISSION IN REACTION OF 14.6-MEV NEUTRONS WITH NATURAL IRON, Nuclear science and engineering, 122(1), 1996, pp. 136-141
Authors:
XIAO ZX
GINSBERG D
EWEN M
LIVINGSTON DM
Citation: Zx. Xiao et al., REGULATION OF THE RETINOBLASTOMA PROTEIN-RELATED PROTEIN P107 BY G(1)CYCLIN-ASSOCIATED KINASES, Proceedings of the National Academy of Sciences of the United Statesof America, 93(10), 1996, pp. 4633-4637
Authors:
XIAO ZX
WEI TL
Citation: Zx. Xiao et Tl. Wei, INVESTIGATION OF INTRINSIC-CARRIER CONCENTRATION, MINORITY-CARRIER CONCENTRATION AND BUILT-IN ELECTRIC-FIELD FOR HEAVILY BORON-DOPED SILICON WITH NON-PARABOLIC ENERGY-BANDS AT LOW-TEMPERATURES, International journal of electronics, 81(6), 1996, pp. 647-655
Authors:
XIAO ZX
WEI TL
Citation: Zx. Xiao et Tl. Wei, QUANTITATIVE MODELING OF DC AND TRANSIENT CHARACTERISTICS AT HIGH INJECTION LEVEL AT 77 AND 300 K IN SILICON BIPOLAR-TRANSISTOR, International journal of electronics, 81(3), 1996, pp. 247-262
Authors:
XIAO ZX
ZHENG J
WEI TL
LI Y
WANG MW
Citation: Zx. Xiao et al., ANALYSIS OF THE HIGH INJECTION EFFECTS IN SILICON BIPOLAR-TRANSISTORSAT LOW-TEMPERATURES, Solid-state electronics, 38(8), 1995, pp. 1455-1460
Authors:
XIAO ZX
WEI TL
Citation: Zx. Xiao et Tl. Wei, CALCULATION OF THE INTRINSIC CARRIER CONCENTRATION AND THE MINORITY-CARRIER CONCENTRATION OF SILICON FOR HEAVY PHOSPHORUS DOPING WITH NON-PARABOLIC ENERGY-BANDS AT LOW-TEMPERATURE, Solid-state electronics, 38(10), 1995, pp. 1837-1838
Authors:
XIAO ZX
CHEN JD
LEVINE AJ
MODJTAHEDI N
XING J
SELLERS WR
LIVINGSTON DM
Citation: Zx. Xiao et al., INTERACTION BETWEEN THE RETINOBLASTOMA PROTEIN AND THE ONCOPROTEIN MDM2, Nature, 375(6533), 1995, pp. 694-698
Authors:
ZHENG J
XIAO ZX
WU J
WEI TL
Citation: J. Zheng et al., CALCULATION AND ANALYSIS OF DC PARAMETERS IN SILICON HETEROJUNCTION BIPOLAR-TRANSISTORS WITH AMORPHOUS EMITTERS AT LOW-TEMPERATURES, Journal of non-crystalline solids, 185(1-2), 1995, pp. 94-100
Authors:
XIAO ZX
FITZGERALDHAYES M
Citation: Zx. Xiao et M. Fitzgeraldhayes, FUNCTIONAL INTERACTION BETWEEN THE CSE2 GENE-PRODUCT AND CENTROMERES IN SACCHAROMYCES-CEREVISIAE, Journal of Molecular Biology, 248(2), 1995, pp. 255-263
Authors:
GINSBERG D
VAIRO G
CHITTENDEN T
XIAO ZX
XU GF
WYDNER KL
DECAPRIO JA
LAWRENCE JB
LIVINGSTON DM
Citation: D. Ginsberg et al., E2F-4, A NEW MEMBER OF THE E2F TRANSCRIPTION FACTOR FAMILY, INTERACTSWITH P107, Genes & development, 8(22), 1994, pp. 2665-2679
Authors:
YE BJ
FAN W
FAN YM
YU XQ
MEI W
WANG ZM
HAN RD
XIAO ZX
Citation: Bj. Ye et al., DEVELOPMENT OF A PULSE-SHAPE DISCRIMINATION CIRCUIT, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 345(1), 1994, pp. 115-119
Authors:
YE BJ
FAN YM
WANG ZM
HAN RD
XIAO ZX
Citation: Bj. Ye et al., THE NB-93 (N, XP) REACTION AT E(N)=14.6MEV, Nuclear science and engineering, 117(1), 1994, pp. 67-75
Authors:
CHEN XH
XIAO ZX
FITZGERALDHAYES M
Citation: Xh. Chen et al., SCM2, A TRYPTOPHAN PERMEASE IN SACCHAROMYCES-CEREVISIAE, IS IMPORTANTFOR CELL-GROWTH, MGG. Molecular & general genetics, 244(3), 1994, pp. 260-268