AAAAAA
Results: 1-25/40
Authors:
Xu, MZ
Bacic, Z
Hutson, JM
Citation: Mz. Xu et al., Clusters containing open-shell molecules: Minimum-energy structures and low-lying isomers of ArnCH (X (2)Pi), n = 1 to 15, FARADAY DIS, 118, 2001, pp. 405-417
Authors:
Cho, HS
Xu, MZ
Kim, SO
Kim, KM
Chung, IJ
Citation: Hs. Cho et al., Microstructural lattice simulation and transient rheological behavior of aflow-aligning liquid crystalline polymer under low shear rates, KOR J CHEM, 18(1), 2001, pp. 46-53
Authors:
Mao, LF
Zhang, HQ
Wei, JL
Mu, FC
Tan, CH
Xu, MZ
Citation: Lf. Mao et al., Numerical analysis for the effects of interface roughness on the attenuation amplitudes of Fowler-Nordheim tunneling current oscillations in ultrathin MOSFETs, SOL ST ELEC, 45(7), 2001, pp. 1081-1084
Authors:
Mao, LF
Tan, CH
Xu, MZ
Citation: Lf. Mao et al., Numerical analysis for the effects of SiO2/Si interface roughness on quantum oscillations in ultrathin MOSFETs, SOL ST ELEC, 45(5), 2001, pp. 773-776
Authors:
Mu, FC
Mao, LF
Wei, JL
Tan, CH
Xu, MZ
Citation: Fc. Mu et al., An improved method for determining the critical energy for interface trap generation of n-MOSFETs under V-g = V-d/2 stress mode, SOL ST ELEC, 45(3), 2001, pp. 385-389
Authors:
Mu, FC
Xu, MZ
Tan, CH
Citation: Fc. Mu et al., A novel method for determining the effect of interface trap generation on the degradation of n-MOSFETs under different hot-carrier stress modes, SOL ST ELEC, 45(3), 2001, pp. 435-439
Authors:
Mao, LF
Tan, CH
Xu, MZ
Citation: Lf. Mao et al., Numerical analysis for root-mean-square roughness of SiO2/Si interface on direct tunneling current in ultrathin MOSFETs, SOL ST ELEC, 45(3), 2001, pp. 531-534
Authors:
Mao, LF
Tan, CH
Xu, MZ
Citation: Lf. Mao et al., Measurements of the widths of transition regions at Si-SiO2 interfaces in metal-oxide-semiconductor structures from quantum oscillations in Fowler-Nordheim tunneling current, SOL ST COMM, 119(2), 2001, pp. 67-71
Authors:
Xu, MZ
Tan, CH
Mao, LF
Citation: Mz. Xu et al., The double level calculation of oxygen related donor states in Si and SiO2, SOL ST COMM, 117(6), 2001, pp. 365-367
Authors:
Mao, LF
Tan, CH
Xu, MZ
Citation: Lf. Mao et al., The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures, MICROEL REL, 41(6), 2001, pp. 927-931
Authors:
Mao, LF
Yang, Y
Wei, JL
Zhang, HQ
Xu, MZ
Tan, CH
Citation: Lf. Mao et al., Effect of SiO2/Si interface roughness on gate current, MICROEL REL, 41(11), 2001, pp. 1903-1907
Authors:
Mu, FC
Xu, MZ
Tan, CH
Duan, XR
Citation: Fc. Mu et al., A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under V-g = V-d, MICROEL REL, 41(11), 2001, pp. 1909-1913
Authors:
Mu, FC
Tan, CH
Xu, MZ
Citation: Fc. Mu et al., Proportional difference estimate method of determining characteristic parameters of normal and log-normal distributions, MICROEL REL, 41(1), 2001, pp. 129-131
Authors:
Yang, CY
Wang, Z
Tan, CH
Xu, MZ
Citation: Cy. Yang et al., The degradation of p-MOSFETs under off-state stress, MICROELEC J, 32(7), 2001, pp. 587-591
Authors:
Xu, MZ
Tan, CH
Yang, CY
Xie, B
Citation: Mz. Xu et al., Investigation of the proportional difference characteristics of MOSFETs, INT J ELECT, 88(4), 2001, pp. 383-393
Authors:
Xu, MZ
Petrucci, S
Eyring, EM
Shirts, RB
Citation: Mz. Xu et al., Experimental evidence of picosecond to femtosecond molecular motion of themacrocycles 12-crown-4 and 15-crown-5 in cyclohexane at 25 degrees C, PHYS CHEM P, 2(10), 2000, pp. 2297-2300
Authors:
Mao, LF
Tan, CH
Xu, MZ
Wei, JL
Citation: Lf. Mao et al., Study of Fowler-Nordheim tunneling current oscillations in ultra-thin insulator MOS structure by interference method, ACT PHY C E, 49(5), 2000, pp. 974-982
Authors:
Xu, MZ
Qiu, G
Jiang, Z
von Hofe, E
Humphreys, RE
Citation: Mz. Xu et al., Genetic modulation of tumor antigen presentation, TRENDS BIOT, 18(4), 2000, pp. 167-172
Authors:
Xu, MZ
Sun, X
Citation: Mz. Xu et X. Sun, Analytical solutions to the third-harmonic generation in trans-polyacetylene: Application of dipole-dipole correlation to single-electron models, PHYS REV B, 61(23), 2000, pp. 15766-15773
Authors:
Mu, FC
Tan, CH
Xu, MZ
Citation: Fc. Mu et al., Proportional difference estimate method of determining the characteristic parameters of monomodal and multimodal Weibull distributions of time-dependent dielectric breakdown, SOL ST ELEC, 44(8), 2000, pp. 1419-1424
Authors:
Mao, LF
Tan, CH
Xu, MZ
Citation: Lf. Mao et al., Study of Fowler-Nordheim tunneling current oscillations of thin insulator MOS structure by wave interference method, SOL ST ELEC, 44(8), 2000, pp. 1501-1506
Authors:
Wang, JY
Xu, MZ
Tan, CH
Citation: Jy. Wang et al., An accurate relationship for determining the key parameters of MOSFETs by proportional difference operator method, SOL ST ELEC, 44(6), 2000, pp. 959-962
Authors:
Wei, JL
Mao, LF
Xu, MZ
Tan, CH
Duan, XR
Citation: Jl. Wei et al., Stress-induced high-field gate leakage current in ultra-thin gate oxide, SOL ST ELEC, 44(6), 2000, pp. 977-980
Authors:
Tan, CH
Xu, MZ
Wang, Z
Citation: Ch. Tan et al., Proportional difference operator method and its application in studying subthreshold behavior of MOSFETs, SOL ST ELEC, 44(6), 2000, pp. 1059-1067
Authors:
Wei, JL
Mao, LF
Xu, MZ
Tan, CH
Citation: Jl. Wei et al., Direct tunneling relaxation spectroscopy in ultra-thin gate oxide MOS structures, SOL ST ELEC, 44(11), 2000, pp. 2021-2025