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Results: 1-25/27
Authors:
YAKIMOVA R
SYVAJARVI M
LOCKOWANDT C
LINNARSSON MK
RADAMSON HH
JANZEN E
Citation: R. Yakimova et al., SILICON-CARBIDE GROWN BY LIQUID-PHASE EPITAXY IN MICROGRAVITY, Journal of materials research, 13(7), 1998, pp. 1812-1815
Authors:
YAKIMOVA R
HEMMINGSSON C
MACMILLAN MF
YAKIMOV T
JANZEN E
Citation: R. Yakimova et al., BARRIER HEIGHT DETERMINATION FOR N-TYPE 4H-SIC SCHOTTKY CONTACTS MADEUSING VARIOUS METALS, Journal of electronic materials, 27(7), 1998, pp. 871-875
Authors:
TUOMINEN M
YAKIMOVA R
KAKANAKOVAGEORGIEVA A
MACMILLAN MF
SYVAJARVI M
JANZEN E
Citation: M. Tuominen et al., INVESTIGATION OF DOMAIN EVOLUTION IN SUBLIMATION EPITAXY OF SIC, Journal of crystal growth, 193(1-2), 1998, pp. 101-108
Authors:
WAHAB Q
KIMOTO T
ELLISON A
HALLIN C
TUOMINEN M
YAKIMOVA R
HENRY A
BERGMAN JP
JANZEN E
Citation: Q. Wahab et al., A 3 KV SCHOTTKY-BARRIER DIODE IN 4H-SIC, Applied physics letters, 72(4), 1998, pp. 445-447
Authors:
SYVAJARVI M
YAKIMOVA R
JANZEN E
Citation: M. Syvajarvi et al., GROWTH OF SIC FROM THE LIQUID-PHASE - WETTING AND DISSOLUTION OF SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1266-1268
Authors:
TUOMINEN M
YAKIMOVA R
PRIEUR E
ELLISON A
TUOMI T
VEHANEN A
JANZEN E
Citation: M. Tuominen et al., GROWTH-RELATED STRUCTURAL DEFECTS IN SEEDED SUBLIMATION-GROWN SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1272-1275
Authors:
ELLISON A
RADAMSON H
TUOMINEN M
MILITA S
HALLIN C
HENRY A
KORDINA O
TUOMI T
YAKIMOVA R
MADAR R
JANZEN E
Citation: A. Ellison et al., WAFER WARPAGE, CRYSTAL BENDING AND INTERFACE PROPERTIES OF 4H-SIC EPI-WAFERS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1369-1373
Authors:
YAKIMOVA R
HYLEN AL
TUOMINEN M
SYVAJARVI M
JANZEN E
Citation: R. Yakimova et al., PREFERENTIAL ETCHING OF SIC CRYSTALS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1456-1458
Authors:
YAKIMOVA R
YAKIMOV T
HITOVA L
JANZEN E
Citation: R. Yakimova et al., DEFECT MAPPING IN 4H-SIC WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 287-290
Authors:
SYVAJARVI M
YAKIMOVA R
IVANOV IG
JANZEN E
Citation: M. Syvajarvi et al., GROWTH OF 4H-SIC FROM LIQUID-PHASE, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 329-332
Authors:
KAKANAKOVAGEORGIEVA A
PASKOVA T
YAKIMOVA R
HALLIN C
SYVAJARVI M
TRIFONOVA EP
SURTCHEV M
JANZEN E
Citation: A. Kakanakovageorgieva et al., STRUCTURAL-PROPERTIES OF 6H-SIC EPILAYERS GROWN BY 2 DIFFERENT TECHNIQUES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 345-348
Authors:
HALLIN C
YAKIMOVA R
PECZ B
GEORGIEVA A
MARINOVA T
KASAMAKOVA L
KAKANAKOV R
JANZEN E
Citation: C. Hallin et al., IMPROVED NI OHMIC CONTACT ON N-TYPE 4H-SIC, Journal of electronic materials, 26(3), 1997, pp. 119-122
Authors:
RABACK P
NIEMINEN R
YAKIMOVA R
TUOMINEN M
JANZEN E
Citation: P. Raback et al., THERMODYNAMIC CONSIDERATIONS OF THE ROLE OF HYDROGEN IN SUBLIMATION GROWTH OF SILICON-CARBIDE, Journal of the Electrochemical Society, 144(3), 1997, pp. 1024-1027
Authors:
VALCHEVA E
PASKOVA T
YAKIMOVA R
Citation: E. Valcheva et al., ANTIMONY DOPED GAAS - A MODEL OF DOMINANT CURRENT TRANSPORT MECHANISM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3582-3587
Authors:
MARINOVA T
YAKIMOVA R
KRASTEV V
HALLIN C
JANZEN E
Citation: T. Marinova et al., INTERFACIAL REACTIONS AND OHMIC CONTACT FORMATION IN THE NI AL-6H SICSYSTEM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3252-3256
Authors:
PASKOVA T
VALCHEVA E
YAKIMOVA R
Citation: T. Paskova et al., ANTIMONY DOPED GAAS - ROLE OF THE ISOELECTRONIC DOPANT IN DEFECT EVOLUTION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1729-1735
Authors:
MARINOVA T
KRASTEV V
HALLIN C
YAKIMOVA R
JANZEN E
Citation: T. Marinova et al., INTERFACE CHEMISTRY AND ELECTRIC CHARACTERIZATION OF NICKEL METALLIZATION ON 6H-SIC, Applied surface science, 99(2), 1996, pp. 119-125
Authors:
TUOMINEN M
PRIEUR E
YAKIMOVA R
GLASS RC
TUOMI T
JANZEN E
Citation: M. Tuominen et al., DEFECT ANALYSIS IN LELY-GROWN 6H SIC, Journal of crystal growth, 165(3), 1996, pp. 233-244
Authors:
KORDINA O
HALLIN C
ELLISON A
BAKIN AS
IVANOV IG
HENRY A
YAKIMOVA R
TOUMINEN M
VEHANEN A
JANZEN E
Citation: O. Kordina et al., HIGH-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SIC, Applied physics letters, 69(10), 1996, pp. 1456-1458
Authors:
YAKIMOVA R
PASKOVA T
TRIFONOVA EP
Citation: R. Yakimova et al., ON THE MORPHOLOGY OF SB-DOPED GAAS-LAYERS GROWN BY MOVPE, Thin solid films, 265(1-2), 1995, pp. 123-128
Authors:
JANZEN E
KORDINA O
HENRY A
CHEN WM
SON NT
MONEMAR B
SORMAN E
BERGMAN P
HARRIS CI
YAKIMOVA R
TUOMINEN M
KONSTANTINOV AO
HALLIN C
HEMMINGSON C
Citation: E. Janzen et al., SIC - A SEMICONDUCTOR FOR HIGH-POWER, HIGH-TEMPERATURE AND HIGH-FREQUENCY DEVICES, Physica scripta. T, 54, 1994, pp. 283-290
Authors:
TUOMINEN M
YAKIMOVA R
GLASS RC
TUOMI T
JANZEN E
Citation: M. Tuominen et al., CRYSTALLINE IMPERFECTIONS IN 4H SIC GROWN WITH A SEEDED LELY METHOD, Journal of crystal growth, 144(3-4), 1994, pp. 267-276
Authors:
YAKIMOVA R
ARNAUDOV B
EVTIMOVA S
PASKOVA T
Citation: R. Yakimova et al., ELECTRON-TRANSPORT IN SB-DOPED METALORGANIC EPITAXIAL GAAS GROWN AT MODERATE AS-RICH CONDITIONS, Journal of applied physics, 76(6), 1994, pp. 3566-3572
Authors:
POPOV A
YAKIMOVA R
Citation: A. Popov et R. Yakimova, TEMPERATURE FORMATION OF STRUCTURAL DEFECTS IN THE INTERFACE OF GAAS SCHOTTKY-BARRIER, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 175-178
Authors:
PASKOVA T
YAKIMOVA R
VALCHEVA E
GERMANOVA K
Citation: T. Paskova et al., CHARACTERIZATION OF MOVPE-GROWN GAAS-LAYERS BY C-V-ANALYSIS (VOL A56,PG 69, 1993), Applied physics. A, Solids and surfaces, 56(4), 1993, pp. 400-400