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Results: 1-25 | 26-26
Results: 1-25/26
THEORETICAL DESCRIPTION OF HIGH-TEMPERATURE IMPLANTATION OF SILICON-CARBIDE WITH N+ AND AL+ IONS
Authors: KULIKOV DV TRUSHIN YV YANKOV RA PEZOLDT J SKORUPA W
Citation: Dv. Kulikov et al., THEORETICAL DESCRIPTION OF HIGH-TEMPERATURE IMPLANTATION OF SILICON-CARBIDE WITH N+ AND AL+ IONS, Technical physics letters, 24(1), 1998, pp. 17-19
SHORT-WAVELENGTH PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH HIGH-DOSES OF SI+, GE+, AND AR+ IONS
Authors: KACHURIN GA TYSCHENKO IE REBOHLE L SKORUPA W YANKOV RA FROEB H BOEHME T LEO K
Citation: Ga. Kachurin et al., SHORT-WAVELENGTH PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH HIGH-DOSES OF SI+, GE+, AND AR+ IONS, Semiconductors, 32(4), 1998, pp. 392-396
SPATIAL-DISTRIBUTION OF DEFECTS IN ION-IMPLANTED AND ANNEALED SI - THE RP 2 EFFECT/
Authors: KOGLER R YANKOV RA KASCHNY JR POSSELT M DANILIN AB SKORUPA W
Citation: R. Kogler et al., SPATIAL-DISTRIBUTION OF DEFECTS IN ION-IMPLANTED AND ANNEALED SI - THE RP 2 EFFECT/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 142(4), 1998, pp. 493-502
DAMAGE IN SILICON-CARBIDE INDUCED BY RUTHERFORD BACKSCATTERING ANALYSIS
Authors: FUKAREK W YANKOV RA ANWAND W HEERA V
Citation: W. Fukarek et al., DAMAGE IN SILICON-CARBIDE INDUCED BY RUTHERFORD BACKSCATTERING ANALYSIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 142(4), 1998, pp. 561-570
NUCLEATION AND GROWTH OF PLATELET BUBBLE STRUCTURES IN HE IMPLANTED SILICON
Authors: FICHTNER PFP KASCHNY JR KLING A TRINKAUS H YANKOV RA MUCKLICH A SKORUPA W ZAWISLAK FC AMARAL L DASILVA MF SOARES JC
Citation: Pfp. Fichtner et al., NUCLEATION AND GROWTH OF PLATELET BUBBLE STRUCTURES IN HE IMPLANTED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 460-464
HELIUM BUBBLES IN SILICON - STUDY OF THE RESIDUAL HELIUM CONTENT USING ELASTIC RECOIL DETECTION ANALYSIS
Authors: KASCHNY JR FICHTNER PFP MUECKLICH A KREISSIG U YANKOV RA SKORUPA W
Citation: Jr. Kaschny et al., HELIUM BUBBLES IN SILICON - STUDY OF THE RESIDUAL HELIUM CONTENT USING ELASTIC RECOIL DETECTION ANALYSIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 583-586
PD-DEFECT-COMPLEXES IN ZNTE AND CDTE AND INTERACTION WITH GROUP-V-ELEMENTS
Authors: HERMANN S MAHNKE HE SPELLMEYER B WIENECKE M REINHOLD B YANKOV RA GUMLICH HE
Citation: S. Hermann et al., PD-DEFECT-COMPLEXES IN ZNTE AND CDTE AND INTERACTION WITH GROUP-V-ELEMENTS, Journal of crystal growth, 185, 1998, pp. 1137-1141
ENHANCEMENT OF THE INTENSITY OF THE SHORT-WAVELENGTH VISIBLE PHOTOLUMINESCENCE FROM SILICON-IMPLANTED SILICON-DIOXIDE FILMS CAUSED BY HYDROSTATIC-PRESSURE DURING ANNEALING
Authors: TYSCHENKO IE REBOHLE L YANKOV RA SKORUPA W MISIUK A
Citation: Ie. Tyschenko et al., ENHANCEMENT OF THE INTENSITY OF THE SHORT-WAVELENGTH VISIBLE PHOTOLUMINESCENCE FROM SILICON-IMPLANTED SILICON-DIOXIDE FILMS CAUSED BY HYDROSTATIC-PRESSURE DURING ANNEALING, Applied physics letters, 73(10), 1998, pp. 1418-1420
HIGH-TEMPERATURE HIGH-DOSE IMPLANTATION OF N-SIC( AND AL+ IONS IN 6H)
Authors: YANKOV RA VOELSKOW M KREISSIG W KULIKOV DV PEZOLDT J SKORUPA W TRUSHIN YV KHARLAMOV VS TSIGANKOV DN
Citation: Ra. Yankov et al., HIGH-TEMPERATURE HIGH-DOSE IMPLANTATION OF N-SIC( AND AL+ IONS IN 6H), Technical physics letters, 23(8), 1997, pp. 617-620
PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH SI+ IONS AND ANNEALEDIN A PULSED REGIME
Authors: KACHURIN GA TYSCHENKO IE ZHURAVLEV KS PAZDNIKOV NA VOLODIN VA GUTAKOVSKII AK LEIER AF SKORUPA W YANKOV RA
Citation: Ga. Kachurin et al., PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH SI+ IONS AND ANNEALEDIN A PULSED REGIME, Semiconductors, 31(6), 1997, pp. 626-630
ANNEALING EFFECTS IN LIGHT-EMITTING SI NANOSTRUCTURES FORMED IN SIO2 BY ION-IMPLANTATION AND TRANSIENT PREHEATING
Authors: KACHURIN GA ZHURAVLEV KS PAZDNIKOV NA LEIER AF TYSCHENKO IE VOLODIN VA SKORUPA W YANKOV RA
Citation: Ga. Kachurin et al., ANNEALING EFFECTS IN LIGHT-EMITTING SI NANOSTRUCTURES FORMED IN SIO2 BY ION-IMPLANTATION AND TRANSIENT PREHEATING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 583-586
VISIBLE AND NEAR-INFRARED LUMINESCENCE FROM SILICON NANOSTRUCTURES FORMED BY ION-IMPLANTATION AND PULSE ANNEALING
Authors: KACHURIN GA TYSCHENKO IE ZHURAVLEV KS PAZDNIKOV NA VOLODIN VA GUTAKOVSKY AK LEIER AF SKORUPA W YANKOV RA
Citation: Ga. Kachurin et al., VISIBLE AND NEAR-INFRARED LUMINESCENCE FROM SILICON NANOSTRUCTURES FORMED BY ION-IMPLANTATION AND PULSE ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(3), 1997, pp. 571-574
BLUE AND VIOLET PHOTOLUMINESCENCE FROM HIGH-DOSE SI-IMPLANTED AND GE+-IMPLANTED SILICON DIOXIDE LAYERS()
Authors: REBOHLE L TYSCHENKO IE FROB H LEO K YANKOV RA VONBORANY J KACHURIN GA SKORUPA W
Citation: L. Rebohle et al., BLUE AND VIOLET PHOTOLUMINESCENCE FROM HIGH-DOSE SI-IMPLANTED AND GE+-IMPLANTED SILICON DIOXIDE LAYERS(), Microelectronic engineering, 36(1-4), 1997, pp. 107-110
IMPURITY GETTERING EFFECTS IN SEPARATION-BY-IMPLANTED-OXYGEN (SIMOX) WAFERS - WHAT GETTERS WHAT, WHERE AND HOW
Authors: YANKOV RA KASCHNY JR FICHTNER PFP MUCKLICH A KREISSIG U SKORUPA W
Citation: Ra. Yankov et al., IMPURITY GETTERING EFFECTS IN SEPARATION-BY-IMPLANTED-OXYGEN (SIMOX) WAFERS - WHAT GETTERS WHAT, WHERE AND HOW, Microelectronic engineering, 36(1-4), 1997, pp. 129-132
AMORPHIZATION AND CRYSTALLIZATION IN HIGH-DOSE ZN-IMPLANTED SILICON()
Authors: KALITZOVA M SIMOV S YANKOV RA ANGELOV C VITALI G ROSSI M PIZZUTO C ZOLLO G FAURE J KILLIAN L BONHOMME P VOELSKOW M
Citation: M. Kalitzova et al., AMORPHIZATION AND CRYSTALLIZATION IN HIGH-DOSE ZN-IMPLANTED SILICON(), Journal of applied physics, 81(3), 1997, pp. 1143-1149
STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGERMANIUM-IMPLANTED AND SILICON-IMPLANTED SILICON-DIOXIDE LAYERS
Authors: REBOHLE L VONBORANY J YANKOV RA SKORUPA W TYSCHENKO IE FROB H LEO K
Citation: L. Rebohle et al., STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGERMANIUM-IMPLANTED AND SILICON-IMPLANTED SILICON-DIOXIDE LAYERS, Applied physics letters, 71(19), 1997, pp. 2809-2811
OVERPRESSURIZED BUBBLES VERSUS VOIDS FORMED IN HELIUM IMPLANTED AND ANNEALED SILICON
Authors: FICHTNER PFP KASCHNY JR YANKOV RA MUCKLICH A KREISSIG U SKORUPA W
Citation: Pfp. Fichtner et al., OVERPRESSURIZED BUBBLES VERSUS VOIDS FORMED IN HELIUM IMPLANTED AND ANNEALED SILICON, Applied physics letters, 70(6), 1997, pp. 732-734
CARBON-MEDIATED EFFECTS IN SILICON AND IN SILICON-RELATED MATERIALS
Authors: SKORUPA W YANKOV RA
Citation: W. Skorupa et Ra. Yankov, CARBON-MEDIATED EFFECTS IN SILICON AND IN SILICON-RELATED MATERIALS, Materials chemistry and physics, 44(2), 1996, pp. 101-143
PROXIMITY GETTERING OF COPPER IN SEPARATION-BY-IMPLANTED-OXYGEN STRUCTURES
Authors: YANKOV RA HATZOPOULOS N SKORUPA W DANILIN AB
Citation: Ra. Yankov et al., PROXIMITY GETTERING OF COPPER IN SEPARATION-BY-IMPLANTED-OXYGEN STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 60-63
A STUDY OF THE BLUE PHOTOLUMINESCENCE EMISSION FROM THERMALLY-GROWN, SI-IMPLANTED SIO2-FILMS AFTER SHORT-TIME ANNEALING()
Authors: SKORUPA W YANKOV RA REBOHLE L FROB H BOHME T LEO K TYSCHENKO IE KACHURIN GA
Citation: W. Skorupa et al., A STUDY OF THE BLUE PHOTOLUMINESCENCE EMISSION FROM THERMALLY-GROWN, SI-IMPLANTED SIO2-FILMS AFTER SHORT-TIME ANNEALING(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 106-109
RADIATION-DAMAGE AND ANNEALING BEHAVIOR OF GE-IMPLANTED SIC()
Authors: PACAUD Y STOEMENOS J BRAUER G YANKOV RA HEERA V VOELSKOW M KOGLER R SKORUPA W
Citation: Y. Pacaud et al., RADIATION-DAMAGE AND ANNEALING BEHAVIOR OF GE-IMPLANTED SIC(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 177-180
COMPARATIVE-STUDY OF SIMOX STRUCTURES USING 4 ANALYTICAL TECHNIQUES
Authors: FUKAREK W YANKOV RA SKORUPA W
Citation: W. Fukarek et al., COMPARATIVE-STUDY OF SIMOX STRUCTURES USING 4 ANALYTICAL TECHNIQUES, Surface and interface analysis, 24(4), 1996, pp. 243-251
ROOM-TEMPERATURE, SHORT-WAVELENGTH (400-500 NM) PHOTOLUMINESCENCE FROM SILICON-IMPLANTED SILICON DIOXIDE FILMS
Authors: SKORUPA W YANKOV RA TYSCHENKO IE FROB H BOHME T LEO K
Citation: W. Skorupa et al., ROOM-TEMPERATURE, SHORT-WAVELENGTH (400-500 NM) PHOTOLUMINESCENCE FROM SILICON-IMPLANTED SILICON DIOXIDE FILMS, Applied physics letters, 68(17), 1996, pp. 2410-2412
PROXIMITY GETTERING OF TRANSITION-METALS IN SEPARATION BY IMPLANTED OXYGEN STRUCTURES
Authors: SKORUPA W HATZOPOULOS N YANKOV RA DANILIN AB
Citation: W. Skorupa et al., PROXIMITY GETTERING OF TRANSITION-METALS IN SEPARATION BY IMPLANTED OXYGEN STRUCTURES, Applied physics letters, 67(20), 1995, pp. 2992-2994
RUTHERFORD BACKSCATTERING AND CHANNELING STUDIES OF BURIED NITRIDE STRUCTURES DIRECTLY PRODUCED BY HIGH-INTENSITY ION-IMPLANTATION OF NITROGEN INTO SILICON
Authors: YANKOV RA GRIBKOVSKII RV KOMAROV FF
Citation: Ra. Yankov et al., RUTHERFORD BACKSCATTERING AND CHANNELING STUDIES OF BURIED NITRIDE STRUCTURES DIRECTLY PRODUCED BY HIGH-INTENSITY ION-IMPLANTATION OF NITROGEN INTO SILICON, Vacuum, 45(1), 1994, pp. 37-40
Risultati: 1-25 | 26-26