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Results:
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Results: 18
Authors:
HWANG HL
WANG KC
HSU KC
WANG RY
YEW TR
LOFERSKI JJ
Citation: Hl. Hwang et al., MICROSTRUCTURE EVOLUTION OF HYDROGENATED SILICON THIN-FILMS AT DIFFERENT HYDROGEN INCORPORATION, Applied surface science, 114, 1997, pp. 741-749
Authors:
CHENG KL
CHENG HC
LEE WH
LEE CP
LIU CC
YEW TR
Citation: Kl. Cheng et al., DEPOSITION OF POLYCRYSTALLINE BETA-SIC FILMS ON SI SUBSTRATES AT ROOM-TEMPERATURE, Applied physics letters, 70(2), 1997, pp. 223-225
Authors:
HWANG HL
WANG KC
HSU KC
YEW TR
LOFERSKI JJ
Citation: Hl. Hwang et al., MICROSTRUCTURE EVOLUTION OF HYDROGENATED SILICON THIN-FILMS, Progress in photovoltaics, 4(3), 1996, pp. 165-192
Authors:
WANG KC
YEW TR
HWANG HL
Citation: Kc. Wang et al., VERY-LOW TEMPERATURE POLYCRYSTALLINE SILICON FILMS WITH VERY LARGE GRAINS DEPOSITED FOR THIN-FILM-TRANSISTOR APPLICATIONS, Applied surface science, 92, 1996, pp. 99-105
Authors:
WANG KC
HWANG HL
LOFERSKI JJ
YEW TR
Citation: Kc. Wang et al., STUDIES ON LOW-TEMPERATURE SILICON GRAIN-GROWTH ON SIO2 BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION, Applied surface science, 104, 1996, pp. 373-378
Authors:
WANG KC
CHENG KL
JIANG YL
YEW TR
HWANG HL
Citation: Kc. Wang et al., VERY-LOW TEMPERATURE DEPOSITION OF POLYCRYSTALLINE SI FILMS FABRICATED BY HYDROGEN DILUTION WITH ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 34(2B), 1995, pp. 927-931
Authors:
CHENG KL
CHENG HC
LIU CC
LEE C
YEW TR
Citation: Kl. Cheng et al., MICROCRYSTALLINE SIC FILMS GROWN BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURES, JPN J A P 1, 34(10), 1995, pp. 5527-5532
Authors:
CHEN CH
YEW TR
Citation: Ch. Chen et Tr. Yew, SILICON EPITAXIAL-GROWTH BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITIONFROM SIH4 H-2 AT 165-350-DEGREES-C/, Journal of crystal growth, 147(3-4), 1995, pp. 305-312
Authors:
WANG KC
HWANG HL
LEONG PT
YEW TR
Citation: Kc. Wang et al., MICROSTRUCTURES OF LOW-TEMPERATURE-DEPOSITED POLYCRYSTALLINE SILICON WITH MICROMETER GRAINS, Journal of applied physics, 77(12), 1995, pp. 6542-6548
Authors:
LIU CC
LEE CP
CHENG KL
CHENG HC
YEW TR
Citation: Cc. Liu et al., GROWTH OF SIC FILMS ON SI(100) BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION USING SIH4 CH4/H-2/, Journal of the Electrochemical Society, 142(12), 1995, pp. 4279-4284
Authors:
LIU CC
LEE CY
CHENG KL
CHENG HC
YEW TR
Citation: Cc. Liu et al., EFFECT OF SIH4 CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-C/, Applied physics letters, 66(2), 1995, pp. 168-170
Authors:
HSU KC
CHEN BY
HSU HT
WANG KC
YEW TR
HWANG HL
Citation: Kc. Hsu et al., THIN-FILM TRANSISTORS MADE FROM HYDROGENATED MICROCRYSTALLINE SILICON, JPN J A P 1, 33(1B), 1994, pp. 639-642
Authors:
CHIANG TY
LIU EH
YEW TR
Citation: Ty. Chiang et al., LOW-TEMPERATURE GAAS EPITAXIAL-GROWTH ON SI(100) BY MOLECULAR-BEAM EPITAXY AND THE POSTGROWTH RAPID THERMAL ANNEALING, Journal of crystal growth, 135(3-4), 1994, pp. 469-475
Authors:
SHIEH MD
LEE CY
YEW TR
Citation: Md. Shieh et al., THE KINETICS OF VERY-LOW TEMPERATURE (SIMILAR-TO-300-DEGREES-C) SILICON EPITAXIAL-GROWTH BY CONFINED PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 141(12), 1994, pp. 3584-3587
Authors:
WANG KC
HWANG HL
YEW TR
Citation: Kc. Wang et al., SULFURIZATION OF SIO2 SURFACE FOR POLYCRYSTALLINE SILICON GROWTH ON SIO2 SI STRUCTURE AT 250-DEGREES-C, Applied physics letters, 64(8), 1994, pp. 1024-1026
Authors:
YEW TR
LIN YJ
SHIEH MD
CHEN CH
Citation: Tr. Yew et al., STRUCTURAL-PROPERTIES OF SILICON EPITAXY GROWN AT 200-600-DEGREES-C BY ELECTRON-BEAM EVAPORATION IN AN ULTRAHIGH-VACUUM SYSTEM, Journal of applied physics, 73(10), 1993, pp. 4932-4936
Authors:
SHIEH MD
LEE CP
CHEN CH
YEW TR
KUNG CY
Citation: Md. Shieh et al., LOW-TEMPERATURE (313-DEGREES-C) SILICON EPITAXIAL-GROWTH BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION WITH STAINLESS-STEEL MESH, Applied physics letters, 63(9), 1993, pp. 1252-1254
SILICON EPITAXIAL-GROWTH AT 300-DEGREES-C BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FROM SIH4 H2/
Authors:
CHEN CH
WAN CM
YEW TR
SHIEH MD
KUNG CY
Citation: Ch. Chen et al., SILICON EPITAXIAL-GROWTH AT 300-DEGREES-C BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FROM SIH4 H2/, Applied physics letters, 62(24), 1993, pp. 3126-3128
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