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Results: 1-25 | 26-26

Results: 1-25/26

Magnetic properties of Fe- and Mn-implanted SiC

Authors: Theodoropoulou, N Hebard, AF Chu, SNG Overberg, ME Abernathy, CR Pearton, SJ Wilson, RG Zavada, JM

Citation: N. Theodoropoulou et al., Magnetic properties of Fe- and Mn-implanted SiC, EL SOLID ST, 4(12), 2001, pp. G119-G121

Preface - Rare earth doped semiconductors III

Authors: Zavada, JM

Citation: Jm. Zavada, Preface - Rare earth doped semiconductors III, MAT SCI E B, 81(1-3), 2001, pp. 1-2

Spectroscopic studies of the visible and infrared luminescence from Er doped GaN

Authors: Hommerich, U Seo, JT Abernathy, CR Steckl, AJ Zavada, JM

Citation: U. Hommerich et al., Spectroscopic studies of the visible and infrared luminescence from Er doped GaN, MAT SCI E B, 81(1-3), 2001, pp. 116-120

Effect of carbon doping on GaN : Er

Authors: Overberg, M Abernathy, CR MacKenzie, JD Pearton, SJ Wilson, RG Zavada, JM

Citation: M. Overberg et al., Effect of carbon doping on GaN : Er, MAT SCI E B, 81(1-3), 2001, pp. 121-126

Annealing behavior of luminescence from erbium-implanted GaN films

Authors: Zavada, JM Ellis, CJ Lin, JY Jiang, HX Seo, JT Hommerich, U Thaik, M Wilson, RG Grudowski, PA Dupuis, RD

Citation: Jm. Zavada et al., Annealing behavior of luminescence from erbium-implanted GaN films, MAT SCI E B, 81(1-3), 2001, pp. 127-131

Characterization and annealing of Eu-doped GaN

Authors: Overberg, M Lee, KN Abernathy, CR Pearton, SJ Hobson, WS Wilson, RG Zavada, JM

Citation: M. Overberg et al., Characterization and annealing of Eu-doped GaN, MAT SCI E B, 81(1-3), 2001, pp. 150-152

Optical properties of Pr implanted GaN epilayers and AlxGa1-xN alloys

Authors: Ellis, CJ Mair, RM Li, J Lin, JY Jiang, HX Zavada, JM Wilson, RG

Citation: Cj. Ellis et al., Optical properties of Pr implanted GaN epilayers and AlxGa1-xN alloys, MAT SCI E B, 81(1-3), 2001, pp. 167-170

Magnetic properties of Mn and Fe-implanted p-GaN

Authors: Theodoropoulou, N Overberg, ME Chu, SNG Hebard, AF Abernathy, CR Wilson, RG Zavada, JM Lee, KP Pearton, SJ

Citation: N. Theodoropoulou et al., Magnetic properties of Mn and Fe-implanted p-GaN, PHYS ST S-B, 228(1), 2001, pp. 337-340

Characterization of high dose Fe implantation into p-GaN

Authors: Theodoropoulou, N Hebard, AF Chu, SNG Overberg, ME Abernathy, CR Pearton, SJ Wilson, RG Zavada, JM

Citation: N. Theodoropoulou et al., Characterization of high dose Fe implantation into p-GaN, APPL PHYS L, 79(21), 2001, pp. 3452-3454

Defect trapping and annealing for transition metal implants in group III nitrides

Authors: Lorenz, K Vianden, R Pearton, SJ Abernathy, CR Zavada, JM

Citation: K. Lorenz et al., Defect trapping and annealing for transition metal implants in group III nitrides, MRS I J N S, 5(5), 2000, pp. 1-7

Photoluminescence enhancement and morphological properties of carbon codoped GaN : Er

Authors: Overberg, ME Abernathy, CR Pearton, SJ Wilson, RG Zavada, JM

Citation: Me. Overberg et al., Photoluminescence enhancement and morphological properties of carbon codoped GaN : Er, MRS I J N S, 5, 2000, pp. NIL_697-NIL_702

Comparison of the optical properties of Er3+ doped gallium nitride prepared by metalorganic molecular beam epitaxy (MOMBE) and solid source molecularbeam epitaxy (SSMBE)

Authors: Hommerich, U Seo, JT MacKenzie, JD Abernathy, CR Birkhahn, R Steckl, AJ Zavada, JM

Citation: U. Hommerich et al., Comparison of the optical properties of Er3+ doped gallium nitride prepared by metalorganic molecular beam epitaxy (MOMBE) and solid source molecularbeam epitaxy (SSMBE), MRS I J N S, 5, 2000, pp. NIL_709-NIL_714

Near infrared (1.54 mu m) luminescence properties of erbium doped gallium nitride

Authors: Hommerich, U Seo, JT Thaik, M Abernathy, CR MacKenzie, JD Zavada, JM

Citation: U. Hommerich et al., Near infrared (1.54 mu m) luminescence properties of erbium doped gallium nitride, J ALLOY COM, 303, 2000, pp. 331-335

Luminescence characteristics of Er-doped GaN semiconductor thin films

Authors: Zavada, JM Thaik, M Hommerich, U MacKenzie, JD Abernathy, CR Pearton, SJ Wilson, RG

Citation: Jm. Zavada et al., Luminescence characteristics of Er-doped GaN semiconductor thin films, J ALLOY COM, 300, 2000, pp. 207-213

Near infrared luminescent device and optical spectroscopy of Er-doped gallium nitride prepared by metalorganic molecular beam epitaxy

Authors: Seo, JT Hommerich, U MacKenzie, JD Abernathy, CR Zavada, JM

Citation: Jt. Seo et al., Near infrared luminescent device and optical spectroscopy of Er-doped gallium nitride prepared by metalorganic molecular beam epitaxy, J KOR PHYS, 36(5), 2000, pp. 311-315

Ordinary optical dielectric functions of anisotropic hexagonal GaN film determined by variable angle spectroscopic ellipsometry

Authors: Yan, CH Yao, H Van Hove, JM Wowchak, AM Chow, PP Zavada, JM

Citation: Ch. Yan et al., Ordinary optical dielectric functions of anisotropic hexagonal GaN film determined by variable angle spectroscopic ellipsometry, J APPL PHYS, 88(6), 2000, pp. 3463-3469

The effect of Er concentration on the morphology and photoluminescence of GaN : Er

Authors: Overberg, ME Brand, J MacKenzie, JD Abernathy, CR Pearton, SJ Zavada, JM

Citation: Me. Overberg et al., The effect of Er concentration on the morphology and photoluminescence of GaN : Er, J ELCHEM SO, 147(8), 2000, pp. 3117-3119

Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substrates

Authors: Birkhahn, R Hudgins, R Lee, D Steckl, AJ Molnar, RJ Saleh, A Zavada, JM

Citation: R. Birkhahn et al., Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substrates, J VAC SCI B, 17(3), 1999, pp. 1195-1199

Photonic applications of rare-earth-doped materials

Authors: Steckl, AJ Zavada, JM

Citation: Aj. Steckl et Jm. Zavada, Photonic applications of rare-earth-doped materials, MRS BULL, 24(9), 1999, pp. 16-20

Optoelectronic properties and applications of rare-earth-doped GaN

Authors: Steckl, AJ Zavada, JM

Citation: Aj. Steckl et Jm. Zavada, Optoelectronic properties and applications of rare-earth-doped GaN, MRS BULL, 24(9), 1999, pp. 33-38

Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN

Authors: Wilson, RG Zavada, JM Cao, XA Singh, RK Pearton, SJ Guo, HJ Pennycock, SJ Fu, M Sekhar, JA Scarvepalli, V Shu, RJ Han, J Rieger, DJ Zolper, JC Abernathy, CR

Citation: Rg. Wilson et al., Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN, J VAC SCI A, 17(4), 1999, pp. 1226-1229

Redistribution of implanted dopants in GaN

Authors: Cao, XA Wilson, RG Zolper, JC Pearton, SJ Han, J Shul, RJ Rieger, DJ Singh, RK Fu, M Scarvepalli, V Sekhar, JA Zavada, JM

Citation: Xa. Cao et al., Redistribution of implanted dopants in GaN, J ELEC MAT, 28(3), 1999, pp. 261-265

Effects of hydrogen implantation into GaN

Authors: Pearton, SJ Abernathy, CR Wilson, RG Zavada, JM Song, CY Weinstein, MG Stavola, M Han, J Shul, RJ

Citation: Sj. Pearton et al., Effects of hydrogen implantation into GaN, NUCL INST B, 147(1-4), 1999, pp. 171-174

1.55 mu m Er-doped GaN LED

Authors: Shen, H Pamulapati, J Taysing, M Wood, MC Lareau, RT Ervin, MH Mackenzie, JD Abernathy, CR Pearton, SJ Ren, F Zavada, JM

Citation: H. Shen et al., 1.55 mu m Er-doped GaN LED, SOL ST ELEC, 43(7), 1999, pp. 1231-1234

Optical transitions in Pr-implanted GaN

Authors: Zavada, JM Mair, RA Ellis, CJ Lin, JY Jiang, HX Wilson, RG Grudowski, PA Dupuis, RD

Citation: Jm. Zavada et al., Optical transitions in Pr-implanted GaN, APPL PHYS L, 75(6), 1999, pp. 790-792

Risultati: 1-25 | 26-26