Authors:
ANDREEV AN
RASTEGAEVA MG
RASTEGAEV VP
RESHANOV SA
Citation: An. Andreev et al., ALLOWING FOR CURRENT SPREADING IN SEMICONDUCTORS DURING MEASUREMENTS OF THE CONTACT RESISTIVITY OF OHMIC CONTACTS, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 739-744
Authors:
ANDREEV AN
SMIRNOVA NY
TREGUBOVA AS
SHCHEGLOV MP
CHELNOKOV VE
Citation: An. Andreev et al., STRUCTURAL PERFECTION OF EPITAXIAL LAYERS OF 3C-SIC GROWN BY VACUUM SUBLIMATION ON 6H-SIC SUBSTRATES, Semiconductors, 31(3), 1997, pp. 232-236
Authors:
ANDREEV AN
TREGUBOVA AS
SCHEGLOV MP
SYRKIN AL
CHELNOKOV VE
Citation: An. Andreev et al., INFLUENCE OF GROWTH-CONDITIONS ON THE STRUCTURAL PERFECTION OF BETA-SIC EPITAXIAL LAYERS FABRICATED ON 6H-SIC SUBSTRATES BY VACUUM SUBLIMATION, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 141-146
Authors:
RASTEGAEVA MG
ANDREEV AN
PETROV AA
BABANIN AI
YAGOVKINA MA
NIKITINA IP
Citation: Mg. Rastegaeva et al., THE INFLUENCE OF TEMPERATURE TREATMENT ON THE FORMATION OF NI-BASED SCHOTTKY DIODES AND OHMIC CONTACTS TO N-6H-SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 254-258
Authors:
ANDREEV AN
SMIRNOVA NY
SHCHEGLOV MP
RASTEGAEVA MG
CHELNOKOV VE
RASTEGAEV VP
Citation: An. Andreev et al., INFLUENCE OF VAPOR-PHASE COMPOSITION IN A GROWTH CELL ON THE DOPING LEVEL OF SILICON-CARBIDE EPITAXIAL LAYERS GROWN BY VACUUM SUBLIMATION, Semiconductors, 30(11), 1996, pp. 1074-1077
Authors:
ANDREEV AN
POPEKO AG
YEREMIN AV
HOFMAN S
HESSBERGER FP
FOLGER H
NINOV V
SARO S
Citation: An. Andreev et al., PRODUCTION AND DECAY PROPERTIES OF LIGHT PROTOACTINIUM NUCLEI, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 60(1), 1996, pp. 148-153
Authors:
ORTOLLAND S
RAYNAUD C
CHANTE JP
LOCATELLI ML
LEBEDEV AA
ANDREEV AN
SAVKINA NS
CHELNOKOV VE
RASTEGAEVA MG
SYRKIN AL
Citation: S. Ortolland et al., EFFECT OF BORON-DIFFUSION ON THE HIGH-VOLTAGE BEHAVIOR OF 6H-SIC P(+)NN(+) STRUCTURES, Journal of applied physics, 80(9), 1996, pp. 5464-5468
Authors:
ANDREEV AN
TREGUBOVA AS
SHCHEGLOV MP
RASTEGAEV VP
DOROZHKIN SI
CHELNOKOV VE
Citation: An. Andreev et al., ANOMALIES IN THE STRUCTURAL PERFECTION OF SIC-6H CRYSTALS GROWN BY THE MODIFIED LELY METHOD, Semiconductors, 29(10), 1995, pp. 955-956
Authors:
ANDREEV AN
BOGDANOV DD
EREMIN AV
KABACHENKO AP
MALYSHEV ON
MUZYCHKA YA
PUSTYLNIK BI
SAGAIDAK RN
TERAKOPYAN GM
CHEPIGIN VI
Citation: An. Andreev et al., FORMATION OF PO ISOTOPES IN THE REACTIONS AL-27-175, AND P-31+TM-169(LU), Physics of atomic nuclei, 58(5), 1995, pp. 730-736
Authors:
ANDREEV AN
ANIKIN MM
ZELENIN VV
IVANOV PA
LEBEDEV AA
RASTEGAEVA MG
SAVKINA NS
STRELCHUK AM
SYRKIN AL
CHELNOKOV VE
Citation: An. Andreev et al., HIGH-TEMPERATURE SILICON-CARBIDE STABILITRONS FOR THE VOLTAGE RANGE FROM 4-V TO 50-V, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 190-193
Authors:
SYRKIN AL
ANDREEV AN
LEBEDEV AA
RASTEGAEVA MG
CHELNOKOV VE
Citation: Al. Syrkin et al., SURFACE-BARRIER HEIGHT IN METAL N-6H-SIC STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 198-201
Authors:
STRELCHUK AM
ANIKIN MM
ANDREEV AN
ZELENIN VV
LEBEDEV AA
RASTEGAEVA MG
SAVKINA NS
SYRKIN AP
CHELNOKOV VE
SHESTOPALOVA LN
Citation: Am. Strelchuk et al., CHARACTERISTICS OF SIC VOLTAGE STABILIZER S FOR 20-300-DEGREES-C TEMPERATURE-RANGE, Zurnal tehniceskoj fiziki, 65(8), 1995, pp. 98-103
Authors:
SYRKIN AL
ANDREEV AN
LEBEDEV AA
RASTEGAEVA MG
CHELNOKOV VE
Citation: Al. Syrkin et al., METAL-N-6H-SIC SURFACE-BARRIER HEIGHT - EXPERIMENTAL-DATA AND DESCRIPTION IN THE TRADITIONAL TERMS, Journal of applied physics, 78(9), 1995, pp. 5511-5514
Authors:
ANDREEV AN
IVANOV PA
STRELCHUK AM
SAVKINA NS
CHELNOKOV VE
SHAPOSHNIKOV IR
Citation: An. Andreev et al., DYNISTOR BASED ON EPITAXIAL SIC-6H LAYERS GROWN BY SUBLIMATION IN AN OPEN GROWTH SYSTEM, Semiconductors, 28(7), 1994, pp. 679-679
Authors:
ANDREEV AN
SNEGOV FM
STRELCHUK AM
CHELNOKOV VE
Citation: An. Andreev et al., SILICON-CARBIDE THYRISTORS - CERTAIN FEATURES OF THE DEVICES AND ESTIMATE OF THEIR POSSIBLE PARAMETERS, Semiconductors, 28(7), 1994, pp. 730-732
Authors:
ANDREEV AN
ANIKIN MM
SYRKIN AL
CHELNOKOV VE
Citation: An. Andreev et al., EFFECT OF VARIOUS PROCESSING METHODS ON THE STATE OF A 6H-SIC(000(1)OVERBAR) SURFACE, Semiconductors, 28(4), 1994, pp. 377-380
Authors:
ANDREEV AN
BABANIN AI
KUZNETSOV AN
RASTEGAEVA MG
TERUKOV EI
CHELNOKOV VE
SHCHEGLOV MP
Citation: An. Andreev et al., OHMIC CONTACTS TO SIC-6H OF N-TYPE CONDUC TIVITY BASED SIC THIN-FILMSDEPOSITED BY THE MAGNETOTRON SPUTTERING TECHNIQUE, Pis'ma v Zurnal tehniceskoj fiziki, 20(18), 1994, pp. 11-15
Authors:
KULIKOVA DM
ANDREEV AN
MALYUCHEVA OI
KULIKOVA DI
Citation: Dm. Kulikova et al., MICROSTRUCTURE OF ANTIMONY COATINGS OBTAINED IN TARTRATE-POLYETHYLENEPOLYAMINE AND CITRATE-POLYETHYLENEPOLYAMINE ELECTROLYTES, Protection of metals, 30(5), 1994, pp. 485-487