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Results: 1-25 | 26-27
Results: 1-25/27
ALLOWING FOR CURRENT SPREADING IN SEMICONDUCTORS DURING MEASUREMENTS OF THE CONTACT RESISTIVITY OF OHMIC CONTACTS
Authors: ANDREEV AN RASTEGAEVA MG RASTEGAEV VP RESHANOV SA
Citation: An. Andreev et al., ALLOWING FOR CURRENT SPREADING IN SEMICONDUCTORS DURING MEASUREMENTS OF THE CONTACT RESISTIVITY OF OHMIC CONTACTS, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 739-744
STRUCTURAL PERFECTION OF EPITAXIAL LAYERS OF 3C-SIC GROWN BY VACUUM SUBLIMATION ON 6H-SIC SUBSTRATES
Authors: ANDREEV AN SMIRNOVA NY TREGUBOVA AS SHCHEGLOV MP CHELNOKOV VE
Citation: An. Andreev et al., STRUCTURAL PERFECTION OF EPITAXIAL LAYERS OF 3C-SIC GROWN BY VACUUM SUBLIMATION ON 6H-SIC SUBSTRATES, Semiconductors, 31(3), 1997, pp. 232-236
INFLUENCE OF GROWTH-CONDITIONS ON THE STRUCTURAL PERFECTION OF BETA-SIC EPITAXIAL LAYERS FABRICATED ON 6H-SIC SUBSTRATES BY VACUUM SUBLIMATION
Authors: ANDREEV AN TREGUBOVA AS SCHEGLOV MP SYRKIN AL CHELNOKOV VE
Citation: An. Andreev et al., INFLUENCE OF GROWTH-CONDITIONS ON THE STRUCTURAL PERFECTION OF BETA-SIC EPITAXIAL LAYERS FABRICATED ON 6H-SIC SUBSTRATES BY VACUUM SUBLIMATION, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 141-146
THE INFLUENCE OF TEMPERATURE TREATMENT ON THE FORMATION OF NI-BASED SCHOTTKY DIODES AND OHMIC CONTACTS TO N-6H-SIC
Authors: RASTEGAEVA MG ANDREEV AN PETROV AA BABANIN AI YAGOVKINA MA NIKITINA IP
Citation: Mg. Rastegaeva et al., THE INFLUENCE OF TEMPERATURE TREATMENT ON THE FORMATION OF NI-BASED SCHOTTKY DIODES AND OHMIC CONTACTS TO N-6H-SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 254-258
INFLUENCE OF VAPOR-PHASE COMPOSITION IN A GROWTH CELL ON THE DOPING LEVEL OF SILICON-CARBIDE EPITAXIAL LAYERS GROWN BY VACUUM SUBLIMATION
Authors: ANDREEV AN SMIRNOVA NY SHCHEGLOV MP RASTEGAEVA MG CHELNOKOV VE RASTEGAEV VP
Citation: An. Andreev et al., INFLUENCE OF VAPOR-PHASE COMPOSITION IN A GROWTH CELL ON THE DOPING LEVEL OF SILICON-CARBIDE EPITAXIAL LAYERS GROWN BY VACUUM SUBLIMATION, Semiconductors, 30(11), 1996, pp. 1074-1077
PRODUCTION AND DECAY PROPERTIES OF LIGHT PROTOACTINIUM NUCLEI
Authors: ANDREEV AN POPEKO AG YEREMIN AV HOFMAN S HESSBERGER FP FOLGER H NINOV V SARO S
Citation: An. Andreev et al., PRODUCTION AND DECAY PROPERTIES OF LIGHT PROTOACTINIUM NUCLEI, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 60(1), 1996, pp. 148-153
EFFECT OF BORON-DIFFUSION ON THE HIGH-VOLTAGE BEHAVIOR OF 6H-SIC P(+)NN(+) STRUCTURES
Authors: ORTOLLAND S RAYNAUD C CHANTE JP LOCATELLI ML LEBEDEV AA ANDREEV AN SAVKINA NS CHELNOKOV VE RASTEGAEVA MG SYRKIN AL
Citation: S. Ortolland et al., EFFECT OF BORON-DIFFUSION ON THE HIGH-VOLTAGE BEHAVIOR OF 6H-SIC P(+)NN(+) STRUCTURES, Journal of applied physics, 80(9), 1996, pp. 5464-5468
FABRICATION AND STUDY OF GH-SIC EPITAXIAL-DIFFUSED P-N-STRUCTURES
Authors: LEBEDEV AA ANDREEV AN MALTSEV AA RASTEGAEVA WG SAVKINA NS CHELNOKOV VE
Citation: Aa. Lebedev et al., FABRICATION AND STUDY OF GH-SIC EPITAXIAL-DIFFUSED P-N-STRUCTURES, Semiconductors, 29(9), 1995, pp. 850-853
STUDY OF SIC-6H DINISTOR STRUCTURES
Authors: ANDREEV AN STRELCHUK AM SAVKINA NS SNEGOV FM CHELNOKOV VE
Citation: An. Andreev et al., STUDY OF SIC-6H DINISTOR STRUCTURES, Semiconductors, 29(6), 1995, pp. 561-565
ANOMALIES IN THE STRUCTURAL PERFECTION OF SIC-6H CRYSTALS GROWN BY THE MODIFIED LELY METHOD
Authors: ANDREEV AN TREGUBOVA AS SHCHEGLOV MP RASTEGAEV VP DOROZHKIN SI CHELNOKOV VE
Citation: An. Andreev et al., ANOMALIES IN THE STRUCTURAL PERFECTION OF SIC-6H CRYSTALS GROWN BY THE MODIFIED LELY METHOD, Semiconductors, 29(10), 1995, pp. 955-956
BARRIER HEIGHT IN N-SIC-6H BASED SCHOTTKY DIODES
Authors: ANDREEV AN LEBEDEV AA RASTEGAEVA MG SNEGOV FM SYRKIN AL CHELNOKOV VE SHESTOPALOVA LN
Citation: An. Andreev et al., BARRIER HEIGHT IN N-SIC-6H BASED SCHOTTKY DIODES, Semiconductors, 29(10), 1995, pp. 957-962
FORMATION OF PO ISOTOPES IN THE REACTIONS AL-27-175, AND P-31+TM-169(LU)
Authors: ANDREEV AN BOGDANOV DD EREMIN AV KABACHENKO AP MALYSHEV ON MUZYCHKA YA PUSTYLNIK BI SAGAIDAK RN TERAKOPYAN GM CHEPIGIN VI
Citation: An. Andreev et al., FORMATION OF PO ISOTOPES IN THE REACTIONS AL-27-175, AND P-31+TM-169(LU), Physics of atomic nuclei, 58(5), 1995, pp. 730-736
HIGH-TEMPERATURE SILICON-CARBIDE STABILITRONS FOR THE VOLTAGE RANGE FROM 4-V TO 50-V
Authors: ANDREEV AN ANIKIN MM ZELENIN VV IVANOV PA LEBEDEV AA RASTEGAEVA MG SAVKINA NS STRELCHUK AM SYRKIN AL CHELNOKOV VE
Citation: An. Andreev et al., HIGH-TEMPERATURE SILICON-CARBIDE STABILITRONS FOR THE VOLTAGE RANGE FROM 4-V TO 50-V, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 190-193
HIGH-TEMPERATURE 6H-SIC DINISTOR
Authors: ANDREEV AN STRELCHUK AM SAVKINA NS SNEGOV FM CHELNOKOV VE
Citation: An. Andreev et al., HIGH-TEMPERATURE 6H-SIC DINISTOR, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 194-197
SURFACE-BARRIER HEIGHT IN METAL N-6H-SIC STRUCTURES
Authors: SYRKIN AL ANDREEV AN LEBEDEV AA RASTEGAEVA MG CHELNOKOV VE
Citation: Al. Syrkin et al., SURFACE-BARRIER HEIGHT IN METAL N-6H-SIC STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 198-201
FRAMED EPITAXIAL-DIFFUSION DIODE BASED ON SIC-6H
Authors: ANDREEV AN LEBEDEV AA ZELENIN VV MALTSEV AA PASTEGAEVA MG SAVKINA NS SOKOLOVA TV CHELNOKOV VE
Citation: An. Andreev et al., FRAMED EPITAXIAL-DIFFUSION DIODE BASED ON SIC-6H, Pis'ma v Zurnal tehniceskoj fiziki, 21(4), 1995, pp. 60-64
CHARACTERISTICS OF SIC VOLTAGE STABILIZER S FOR 20-300-DEGREES-C TEMPERATURE-RANGE
Authors: STRELCHUK AM ANIKIN MM ANDREEV AN ZELENIN VV LEBEDEV AA RASTEGAEVA MG SAVKINA NS SYRKIN AP CHELNOKOV VE SHESTOPALOVA LN
Citation: Am. Strelchuk et al., CHARACTERISTICS OF SIC VOLTAGE STABILIZER S FOR 20-300-DEGREES-C TEMPERATURE-RANGE, Zurnal tehniceskoj fiziki, 65(8), 1995, pp. 98-103
METAL-N-6H-SIC SURFACE-BARRIER HEIGHT - EXPERIMENTAL-DATA AND DESCRIPTION IN THE TRADITIONAL TERMS
Authors: SYRKIN AL ANDREEV AN LEBEDEV AA RASTEGAEVA MG CHELNOKOV VE
Citation: Al. Syrkin et al., METAL-N-6H-SIC SURFACE-BARRIER HEIGHT - EXPERIMENTAL-DATA AND DESCRIPTION IN THE TRADITIONAL TERMS, Journal of applied physics, 78(9), 1995, pp. 5511-5514
DYNISTOR BASED ON EPITAXIAL SIC-6H LAYERS GROWN BY SUBLIMATION IN AN OPEN GROWTH SYSTEM
Authors: ANDREEV AN IVANOV PA STRELCHUK AM SAVKINA NS CHELNOKOV VE SHAPOSHNIKOV IR
Citation: An. Andreev et al., DYNISTOR BASED ON EPITAXIAL SIC-6H LAYERS GROWN BY SUBLIMATION IN AN OPEN GROWTH SYSTEM, Semiconductors, 28(7), 1994, pp. 679-679
SILICON-CARBIDE THYRISTORS - CERTAIN FEATURES OF THE DEVICES AND ESTIMATE OF THEIR POSSIBLE PARAMETERS
Authors: ANDREEV AN SNEGOV FM STRELCHUK AM CHELNOKOV VE
Citation: An. Andreev et al., SILICON-CARBIDE THYRISTORS - CERTAIN FEATURES OF THE DEVICES AND ESTIMATE OF THEIR POSSIBLE PARAMETERS, Semiconductors, 28(7), 1994, pp. 730-732
METHOD FOR PURIFYING A SILICON-CARBIDE SURFACE IN HIGH-VACUUM
Authors: ANDREEV AN ANIKIN MM SYRKIN AL CHELNOKOV VE
Citation: An. Andreev et al., METHOD FOR PURIFYING A SILICON-CARBIDE SURFACE IN HIGH-VACUUM, Semiconductors, 28(6), 1994, pp. 577-579
RELATIONSHIP BETWEEN DEFECT LUMINESCENCE IN 6H-SIC AND DEEP-LEVEL CENTERS
Authors: ANDREEV AN ANIKIN MM LEBEDEV AA POLETAEV NK STRELCHUK AM SYRKIN AL CHELNOKOV VE
Citation: An. Andreev et al., RELATIONSHIP BETWEEN DEFECT LUMINESCENCE IN 6H-SIC AND DEEP-LEVEL CENTERS, Semiconductors, 28(5), 1994, pp. 430-435
EFFECT OF VARIOUS PROCESSING METHODS ON THE STATE OF A 6H-SIC(000(1)OVERBAR) SURFACE
Authors: ANDREEV AN ANIKIN MM SYRKIN AL CHELNOKOV VE
Citation: An. Andreev et al., EFFECT OF VARIOUS PROCESSING METHODS ON THE STATE OF A 6H-SIC(000(1)OVERBAR) SURFACE, Semiconductors, 28(4), 1994, pp. 377-380
OHMIC CONTACTS TO SIC-6H OF N-TYPE CONDUC TIVITY BASED SIC THIN-FILMSDEPOSITED BY THE MAGNETOTRON SPUTTERING TECHNIQUE
Authors: ANDREEV AN BABANIN AI KUZNETSOV AN RASTEGAEVA MG TERUKOV EI CHELNOKOV VE SHCHEGLOV MP
Citation: An. Andreev et al., OHMIC CONTACTS TO SIC-6H OF N-TYPE CONDUC TIVITY BASED SIC THIN-FILMSDEPOSITED BY THE MAGNETOTRON SPUTTERING TECHNIQUE, Pis'ma v Zurnal tehniceskoj fiziki, 20(18), 1994, pp. 11-15
MICROSTRUCTURE OF ANTIMONY COATINGS OBTAINED IN TARTRATE-POLYETHYLENEPOLYAMINE AND CITRATE-POLYETHYLENEPOLYAMINE ELECTROLYTES
Authors: KULIKOVA DM ANDREEV AN MALYUCHEVA OI KULIKOVA DI
Citation: Dm. Kulikova et al., MICROSTRUCTURE OF ANTIMONY COATINGS OBTAINED IN TARTRATE-POLYETHYLENEPOLYAMINE AND CITRATE-POLYETHYLENEPOLYAMINE ELECTROLYTES, Protection of metals, 30(5), 1994, pp. 485-487
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