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Results: 1-25/39
Authors:
SLEIGHT JW
MISTRY KR
ANTONIADIS DA
Citation: Jw. Sleight et al., TRANSIENT MEASUREMENTS OF SOI BODY CONTACT EFFECTIVENESS, IEEE electron device letters, 19(12), 1998, pp. 499-501
Authors:
WEI A
SHERONY MJ
ANTONIADIS DA
Citation: A. Wei et al., EFFECT OF FLOATING-BODY CHARGE ON SOI MOSFET DESIGN, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 430-438
Authors:
SHEN CC
MURGUIA J
GOLDSMAN N
PECKERAR M
MELNGAILIS J
ANTONIADIS DA
Citation: Cc. Shen et al., USE OF FOCUSED-ION-BEAM AND MODELING TO OPTIMIZE SUBMICRON MOSFET CHARACTERISTICS, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 453-459
Authors:
SHERONY MJ
ANTONIADIS DA
CHEN AJ
MISTRY KR
Citation: Mj. Sherony et al., REDUCED PLASMA-INDUCED CHARGING DAMAGE IN SOI MOSFETS, Solid-state electronics, 41(9), 1997, pp. 1371-1373
Authors:
YANG IY
VIERI C
CHANDRAKASAN A
ANTONIADIS DA
Citation: Iy. Yang et al., BACK-GATED CMOS ON SOIAS FOR DYNAMIC THRESHOLD VOLTAGE CONTROL, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 822-831
Authors:
HUANG CL
SOLEIMANI HR
GRULA GJ
SLEIGHT JW
VILLANI A
ALI H
ANTONIADIS DA
Citation: Cl. Huang et al., LOCOS-INDUCED STRESS EFFECTS ON THIN-FILM SOI DEVICES, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 646-650
INVESTIGATION OF SI SIGE-BASED FET GEOMETRIES FOR HIGH-FREQUENCY PERFORMANCE BY COMPUTER-SIMULATION/
Authors:
ONEILL AG
ANTONIADIS DA
Citation: Ag. Oneill et Da. Antoniadis, INVESTIGATION OF SI SIGE-BASED FET GEOMETRIES FOR HIGH-FREQUENCY PERFORMANCE BY COMPUTER-SIMULATION/, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 80-88
Authors:
YANG IY
ANTONIADIS DA
SMITH HI
Citation: Iy. Yang et al., FABRICATION OF BACK-GATED COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICES USING MIXED AND MATCHED OPTICAL AND X-RAY LITHOGRAPHIES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4024-4028
Authors:
WEI A
ANTONIADIS DA
BAIR LA
Citation: A. Wei et al., MINIMIZING FLOATING-BODY-INDUCED THRESHOLD VOLTAGE VARIATION IN PARTIALLY DEPLETED SOI CMOS, IEEE electron device letters, 17(8), 1996, pp. 391-394
Authors:
WEI A
ANTONIADIS DA
Citation: A. Wei et Da. Antoniadis, MEASUREMENT OF TRANSIENT EFFECTS IN SOI DRAM SRAM ACCESS TRANSISTORS/, IEEE electron device letters, 17(5), 1996, pp. 193-195
Authors:
RAHMAT K
WHITE J
ANTONIADIS DA
Citation: K. Rahmat et al., SIMULATION OF SEMICONDUCTOR-DEVICES USING A GALERKIN SPHERICAL HARMONIC EXPANSION APPROACH TO SOLVING THE COUPLED POISSON-BOLTZMANN SYSTEM/, IEEE transactions on computer-aided design of integrated circuits and systems, 15(10), 1996, pp. 1181-1196
Authors:
SADEK A
ISMAIL K
ARMSTRONG MA
ANTONIADIS DA
STERN F
Citation: A. Sadek et al., DESIGN OF SI SIGE HETEROJUNCTION COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTORS/, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1224-1232
Authors:
ONEILL AG
ANTONIADIS DA
Citation: Ag. Oneill et Da. Antoniadis, DEEP-SUBMICRON CMOS BASED ON SILICON-GERMANIUM TECHNOLOGY, I.E.E.E. transactions on electron devices, 43(6), 1996, pp. 911-918
Authors:
HUANG CL
FARICELLI JV
ANTONIADIS DA
KHALIL NA
RIOS RA
Citation: Cl. Huang et al., AN ACCURATE GATE LENGTH EXTRACTION METHOD FOR SUB-QUARTER MICRON MOSFETS, I.E.E.E. transactions on electron devices, 43(6), 1996, pp. 958-964
Authors:
YANG IY
SILVERMAN S
FERRERA J
JACKSON K
CARTER JM
ANTONIADIS DA
SMITH HI
Citation: Iy. Yang et al., COMBINING AND MATCHING OPTICAL, ELECTRON-BEAM, AND X-RAY LITHOGRAPHIES IN THE FABRICATION OF SI COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR CIRCUITS WITH 0.1 AND SUB-0.1 MU-M FEATURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2741-2744
Authors:
SHERONY MJ
SU LT
CHUNG JE
ANTONIADIS DA
Citation: Mj. Sherony et al., REDUCTION OF THRESHOLD VOLTAGE SENSITIVITY IN SOI MOSFETS, IEEE electron device letters, 16(3), 1995, pp. 100-102
Authors:
WEI A
SHERONY MJ
ANTONIADIS DA
Citation: A. Wei et al., TRANSIENT-BEHAVIOR OF THE KINK EFFECT IN PARTIALLY-DEPLETED SOI MOSFETS, IEEE electron device letters, 16(11), 1995, pp. 494-496
Authors:
BURKHARDT M
SILVERMAN S
SMITH HI
ANTONIADIS DA
RHEE KW
PECKERAR MC
Citation: M. Burkhardt et al., GAP CONTROL IN THE FABRICATION OF QUANTUM-EFFECT DEVICES USING X-RAY NANOLITHOGRAPHY, Microelectronic engineering, 27(1-4), 1995, pp. 307-310
Authors:
ZHAO Y
TSUI DC
SANTOS MB
SHAYEGAN M
GHANBARI RA
ANTONIADIS DA
SMITH HI
Citation: Y. Zhao et al., GRATING-INDUCED CYCLOTRON-RESONANCE ANOMALY IN GAAS AL-X GA-1-XAS HETEROSTRUCTURES/, Physical review. B, Condensed matter, 51(19), 1995, pp. 13174-13180
Authors:
GOODSON KE
FLIK MI
SU LT
ANTONIADIS DA
Citation: Ke. Goodson et al., PREDICTION AND MEASUREMENT OF TEMPERATURE-FIELDS IN SILICON-ON-INSULATOR ELECTRONIC-CIRCUITS, Journal of heat transfer, 117(3), 1995, pp. 574-581
Authors:
ARMSTRONG MA
ETCHIN S
MELNGAILIS J
ANTONIADIS DA
Citation: Ma. Armstrong et al., PRINCIPLE OF OPERATION AND CARRIER DISTRIBUTIONS OF ALGAAS GAAS IN-PLANE-GATED CHANNELS/, Journal of applied physics, 78(1), 1995, pp. 560-563
Authors:
HONG MY
ANTONIADIS DA
Citation: My. Hong et Da. Antoniadis, THEORETICAL-ANALYSIS AND MODELING OF SUBMICRON CHANNEL-LENGTH DMOS TRANSISTORS, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1614-1622
Authors:
HU H
JACOBS JB
SU LT
ANTONIADIS DA
Citation: H. Hu et al., A STUDY OF DEEP-SUBMICRON MOSFET SCALING BASED ON EXPERIMENT AND SIMULATION, I.E.E.E. transactions on electron devices, 42(4), 1995, pp. 669-677
Authors:
KUMAR A
EUGSTER CC
ORLANDO TP
ANTONIADIS DA
KINARET JM
ROOKS MJ
MELLOCH MR
Citation: A. Kumar et al., CORRELATION OF OSCILLATIONS IN A QUANTUM-DOT WITH 3 CONTACTS, Applied physics letters, 66(11), 1995, pp. 1379-1381
Authors:
BURKHARDT M
SMITH HI
ANTONIADIS DA
ORLANDO TP
MELLOCH MR
RHEE KW
PECKERAR MC
Citation: M. Burkhardt et al., FABRICATION USING X-RAY NANOLITHOGRAPHY AND MEASUREMENT OF COULOMB-BLOCKADE IN A VARIABLE-SIZED QUANTUM-DOT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3611-3613